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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林致廷 | zh_TW |
| dc.contributor.advisor | Chih-Ting Lin | en |
| dc.contributor.author | 蘇子程 | zh_TW |
| dc.contributor.author | Tzu-Cheng Su | en |
| dc.date.accessioned | 2023-08-15T17:02:22Z | - |
| dc.date.available | 2023-11-09 | - |
| dc.date.copyright | 2023-08-15 | - |
| dc.date.issued | 2023 | - |
| dc.date.submitted | 2023-08-02 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88607 | - |
| dc.description.abstract | 本論文探討了寄生閘極離子敏感型場效電晶體（ISFET）在葡萄糖檢測中的應用。本次研究使用TSMC D35標準CMOS技術設計了兩組晶片，其中包含不同的ISFET結構，並搭配類似雙閘極結構之寄生閘以放大訊號。
研究的目標是分析各種ISFET結構，並找出對閾值電壓(Threshold Voltage)反應最佳的結構。其中2D和3D ISFETs表現出最佳的閾值電壓敏感度，被選中用於測量葡萄糖濃度。 本研究採用的葡萄糖感測機制為葡萄糖氧化酶反應，將電晶體改質後將氧化酶固定於表面，分別加入不同濃度之葡萄糖溶液進行電性量測。並針對不同模式下的晶片進行線性度、靈敏度、選擇性的分析，結果顯示，其擁有很高的線性度以及量測極限，具有葡萄糖監測裝置的潛力。 總結而言，本論文對寄生閘ISFETs在葡萄糖檢測中進行了研究。其中2D 寄生閘極 ISFET 被認為測量葡萄糖濃度的最佳結構，為醫療保健和生物技術領域的應用提供了有希望的前景。 | zh_TW |
| dc.description.abstract | This thesis investigates the application of Parasitic Gate Ion Sensitive Field Effect Transistors (ISFETs) for glucose detection. Two sets of chips were designed using TSMC D35 standard CMOS Technology, incorporating different ISFET structures with a parasitic gate resembling a dual-gate configuration to amplify the signal.
The objective of this research was to analyze various ISFET structures and identify the ones with the best threshold voltage response. The 2D and 3D ISFETs exhibited superior sensitivity to threshold voltage changes and were selected for glucose concentration measurement. The glucose sensing mechanism employed glucose oxidase reaction, where the enzyme was immobilized on the modified transistor surface. The chips were subjected to electrical measurements with different concentrations of glucose solutions. The linearity, sensitivity, and selectivity of the devices in different modes were analyzed. The results demonstrated high linearity and measurement limits, indicating the potential of the glucose monitoring device. In conclusion, this thesis presents a study on Parasitic Gate ISFETs for glucose detection. The 2D parasitic gate ISFET was identified as the optimal structure for measuring glucose concentration, offering promising prospects for applications in healthcare and biotechnology. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-08-15T17:02:21Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2023-08-15T17:02:22Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | Verification Letter from the Oral Examination Committee i
Acknowledgments iii 摘要 v Abstract vii Contents ix List of Figures xiii List of Tables xv Denotation xvii Chapter 1 Introduction 1 1.1 Preamble 1 1.2 Research Motivation 2 1.3 Thesis Structure 4 Chapter 2 Background 5 2.1 Biomedical Sensing Technology 5 2.1.1 Chemistry Reaction Method 6 2.1.2 Optical Method 6 2.1.3 Electrochemical Method 8 2.2 Ion Sensitive Field Effect Transistor 10 2.2.1 Theory 11 2.2.2 Types of ISFET 19 2.2.3 Applications 23 2.2.4 Non-ideal Effect of ISFET 26 Chapter 3 Device Design and Experimental Method 29 3.1 Design and Fabrication of CMOS Compatible ISFET 29 3.1.1 Design of 3D-ISFET 30 3.1.2 Design of 2D-ISFET 32 3.1.3 Design of TiN-ISFET 32 3.1.4 Design of PG-ISFET 35 3.1.5 Wire Bonding and Packaging 35 3.2 Experimental Method 36 3.2.1 Experimental Design 36 3.2.2 Surface Modification and Glucose Immobilization 39 Chapter 4 Experimental Result 43 4.1 Performance of different types of ISFETs 44 4.1.1 Solution Gate Mode(SG) 44 4.1.2 Parasitic Gate Mode(PG) 46 4.1.3 Summary 50 4.2 Glucose Response 53 4.2.1 2D-ISFET 54 4.2.2 3D-ISFET 55 4.2.3 Selectivity 56 4.2.4 Summary 59 Chapter 5 Conclusion and Future Work 59 5.1 Conclusion 59 5.2 Future Work 60 Reference 63 | - |
| dc.language.iso | en | - |
| dc.subject | 葡萄糖 | zh_TW |
| dc.subject | 離子敏感型場效電晶體 | zh_TW |
| dc.subject | 氮化鈦離子敏感型電晶體 | zh_TW |
| dc.subject | 感測器 | zh_TW |
| dc.subject | 寄生閘極 | zh_TW |
| dc.subject | 雙閘極 | zh_TW |
| dc.subject | 延伸閘極 | zh_TW |
| dc.subject | TiN | en |
| dc.subject | ISFET | en |
| dc.subject | Glucose | en |
| dc.subject | Ion Sensitive | en |
| dc.subject | Sensor | en |
| dc.subject | Dual Gate | en |
| dc.subject | Extended Gate | en |
| dc.subject | CMOS Sensor | en |
| dc.subject | Bio Sensor | en |
| dc.title | 寄生閘極離子敏感型場效電晶體於葡萄糖濃度檢測之研究 | zh_TW |
| dc.title | Research of Parasitic Gate Ion Sensitive Field Effect Transistor in Glucose Detection | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 111-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 黃建璋;黃念祖 | zh_TW |
| dc.contributor.oralexamcommittee | Jian-Jang Huang;Nien Tsu Huang | en |
| dc.subject.keyword | 寄生閘極,離子敏感型場效電晶體,葡萄糖,感測器,雙閘極,延伸閘極,氮化鈦離子敏感型電晶體, | zh_TW |
| dc.subject.keyword | ISFET,Glucose,Ion Sensitive,Sensor,Dual Gate,Extended Gate,CMOS Sensor,Bio Sensor,TiN, | en |
| dc.relation.page | 66 | - |
| dc.identifier.doi | 10.6342/NTU202302019 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2023-08-04 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 生醫電子與資訊學研究所 | - |
| dc.date.embargo-lift | 2026-07-31 | - |
| 顯示於系所單位： | 生醫電子與資訊學研究所 | |
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