請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88082
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 胡振國 | zh_TW |
dc.contributor.advisor | Jenn-Gwo Hwu | en |
dc.contributor.author | 陳舜啓 | zh_TW |
dc.contributor.author | Shun-Chi Chen | en |
dc.date.accessioned | 2023-08-08T16:13:05Z | - |
dc.date.available | 2023-11-09 | - |
dc.date.copyright | 2023-08-08 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-06-19 | - |
dc.identifier.citation | [1] C. -S. Liao and J. -G. Hwu, "Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS Gated-MIS Tunnel Transistor," in IEEE Transactions on Electron Devices, vol. 62, no. 6, pp. 2061-2065, June 2015, doi: 10.1109/TED.2015.2424245.
[2] C. -S. Liao, W. -C. Kao and J. -G. Hwu, "Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading With an MIS Tunnel Diode Sensor," in IEEE Journal of the Electron Devices Society, vol. 4, no. 6, pp. 424-429, Nov. 2016, doi: 10.1109/JEDS.2016.2591956. [3] C. -Y. Huang and J. -G. Hwu, "Enhanced Photo Sensing and Lowered Power Consumption in Concentric MIS Devices by Monitoring Outer Ring Open-Circuit Voltage With Biased Inner Gate," in IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3417-3423, July 2021, doi: 10.1109/TED.2021.3082813. [4] Y. -K. Lin and J. -G. Hwu, "Photosensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode," in IEEE Transactions on Electron Devices, vol. 61, no. 9, pp. 3217-3222, Sept. 2014, doi: 10.1109/TED.2014.2334704. [5] B. Yu, Y. Yuan, H.-P. Chen, J. Ahn, P.C. McIntyre and Y. Taur “Effect and extraction of series resistance in Al2O3-InGaAs MOS with bulk-oxide trap,” Electronics Lett., Vol. 49 no. 7, pp. 492-493, Mar. 2013. [6] Kao, Wei-Chih, Jun-Yao Chen, and Jenn-Gwo Hwu. "Transconductance sensitivity enhancement in gated-MIS (p) tunnel diode by self-protective effective local thinning mechanism." Applied Physics Letters 109.6 (2016): 063503. [7] S. -W. Huang and J. -G. Hwu, "Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior," in IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 7107-7112, Dec. 2022, doi: 10.1109/TED.2022.3215103. [8] C. C. Lin, P. L. Hsu, L. Lin and J. G. Hwu, “Investigation on Edge Fringing Effect and Oxide Thickness Dependence of Inversion Current in MOS Tunneling Diodes with Comb-Shaped Electrodes,” J. Appl. Phys., vol. 115, no. 12, pp. 124109, Mar. 2014. [9] C. -Y. Yang and J. -G. Hwu, "Photo-Sensitivity Enhancement of HfO2-Based MOS Photodiode With Specific Perimeter Dependency Due to Edge Fringing Field Effect," in IEEE Sensors Journal, vol. 12, no. 6, pp. 2313-2319, June 2012, doi: 10.1109/JSEN.2012.2187886. [10] Chen, Jen-Hao, Kung-Chu Chen, and Jenn-Gwo Hwu. "Fringing field induced current coupling in concentric metal–insulator–semiconductor (MIS) tunnel diodes with ultra-thin oxide." AIP Advances 12.4 (2022): 045116. [11] P. F. Schmidt, and W. Michael, “Anodic Formation of Oxide Films on Silicon,” J. Electrochem. Soc., vol. 104, no. 4, pp. 230-236, Apr. 19 | - |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88082 | - |
dc.description.abstract | 本篇論文主要探討金氧半穿隧元件的耦合效應及開路電壓和短路電流感測的多階態特性,元件的電極結構為四個正方形圍繞著一個長方形。在本論文第二章中,金氧半元件因有超薄氧化層的設計,因此可以有極小的飽和電流,並且透過電流-電壓量測後可發現有耦合效應。當外環施加偏壓時,其中心可感應到開路電壓及短路電流,並且隨著外環的數量不同,中心所感應的開路電壓和短路電流也有明顯區別,因此可作為多階態展現的金氧半元件。在本論文第三章中,為了較相容現今的技術節點,因此利用厚薄氧化層的製程將元件微縮,並且採用先生長厚氧化層再生長薄氧化層的方式,厚薄氧化層的元件會因為厚區不斷提供少數載子至薄區,因此電流無法達到飽和也無耦合效應。本研究提出了特別的引導式軟性崩潰操作,可以使氧化層局部薄化,將元件的特性改變,使得電流進入飽和並且開路電壓有耦合效應,元件也能展現出多階態特性。特別的軟性崩潰方法是利用感應電場的分布不均,將外環和中心的氧化層局部薄化點盡可能的靠近,因此能使耦合效應增強。為了能驗證電場和電子濃度的分布,使用了SILVACO TCAD軟體進行電場和電子濃度的模擬,結果也和所提出的想法相符合。因此,不論是超薄氧化層或是厚薄氧化層的金氧半穿隧元件,都具有作為多階態特性元件的潛力。 | zh_TW |
dc.description.abstract | In this thesis, the coupling effect of the metal insulator semiconductor tunneling diodes (MIS TD) and the multi-state characteristics of open-circuit voltage and short-circuit current sensing of the device have been investigated. The electrode pattern of the device is four squares surrounding a rectangle. In Chapter 2, due to the design of the ultra-thin oxide layer, the device has extremely low saturation current. The coupling effect was found through the current-voltage measurement. Applying a bias voltage to the outer rings, the open-circuit voltage and the short-circuit current were sensed in the center. The magnitude of sensed open-circuit voltage and sensed short-circuit current are also significantly different with different number of outer rings, so it can be used as a multilevel device. In Chapter 3, in order to be compatible with current technology nodes, the device is scaled by the high-low oxide process. The method of growing thick oxide first and then thin oxide is used. Because the thick oxide region will provide extra minority carriers to the thin oxide region, there would be no saturation current and no coupling effect of the device. Therefore, a special method of induced soft breakdown operation was proposed, which can create the oxide local thinning (OLT) and change the characteristics of the device. The current is saturated and the open-circuit voltage exhibits coupling effect. Hence, the device can also exhibit multi-level characteristic. The special soft breakdown operation is based on the uneven distribution of the induced electric field, and to make OLT spot of the outer rings and the center as close as possible, so that the coupling effect can be enhanced. In order to verify the distribution of the electric field and the electron concentration, SILVACO TCAD software is used to simulate the electric field and the electron concentration. The result is consistent with the proposed method. Therefore, both of MIS tunneling diodes with ultra-thin oxide and high-low oxide have the potential to be used as multi-state characteristic devices. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-08-08T16:13:05Z No. of bitstreams: 0 | en |
dc.description.provenance | Made available in DSpace on 2023-08-08T16:13:05Z (GMT). No. of bitstreams: 0 | en |
dc.description.tableofcontents | Contents
摘要………………………………………………………………………Ⅰ Abstract…………………………………………………………………Ⅱ Contents………………………………………………………………...Ⅳ Figure Captions………………………………………………………..Ⅶ Chapter 1 Introduction……………………………………………..1 1-1 Thesis Organization…………………………………………………….2 1-2 I-V Characteristics of MIS(p) Tunnel Diodes………………………….2 1-2-1 Mechanism of Hole Current Saturation………………………….2 1-2-2 Effect of Oxide Thickness………………………………………..3 1-2-3 Effect of Additional Minority Carriers Supply…………………..4 1-3 OLT (Oxide Local Thinning)…………………………………………..5 1-4 TCAD Simulation………………………………………………………6 1-5 Summary……………………………………………………………….6 Chapter 2 Multi-State Displayed by Open-Circuit Voltage and Short-Circuit Current of Coupling MIS TD……………11 2-1 Introduction…………………………………………………………...12 2-2 Experimental Procedure………………………………………………12 2-3 Results and Discussions……………………………………………….13 2-3-1 I-V Characteristics in Planar Structure Operation……………….13 2-3-2 Open-Circuit Operation of Coupling Voltage…………………..13 2-3-3 Short-Circuit Operation of Coupling Current…………………..14 2-3-4 Multi-State Voltage/Current by Different Structure…………….15 2-4 Summary………………………………………………………….......16 Chapter 3 Coupling Effect of High-Low Structure MIS TD Enhanced by Novel Soft Breakdown Operation……….33 3-1 Introduction…………………………………………………………...34 3-2 Experimental Procedure………………………………………………34 3-3 Results and Discussions……………………………………………….36 3-3-1 I-V Characteristics in Planar and High-Low Structure………….36 3-3-2 Soft Breakdown Mechanism in High-Low Device……………..37 3-3-3 Ring Soft Breakdown Induced by Center with Negative bias…..39 3-3-4 Electric Field and Electron Concentration in TCAD Simulation……………………………………………………...41 3-4 Summary……………………………………………………………...43 Chapter 4 Conclusion and Future Work……………………………61 4-1 Conclusion…………………………………………………………….62 4-2 Future Work…………………………………………………………...63 4-2-1 More Input and Output Combinations for Multi-State Characteristic…………………………………………………...63 4-2-2 Process for High-Low Structure………………………………...63 4-2-3 The Pattern of Electrode………………………………………...64 References……………………………………………………................66 | - |
dc.language.iso | en | - |
dc.title | 多階態開路電壓和短路電流感測金氧半耦合元件及誘導式軟性崩潰操作技術 | zh_TW |
dc.title | Multi-State Open-Circuit Voltage and Short-Circuit Current Sensing in MIS Coupling Devices and Induced Soft Breakdown Operation Technology | en |
dc.type | Thesis | - |
dc.date.schoolyear | 111-2 | - |
dc.description.degree | 碩士 | - |
dc.contributor.oralexamcommittee | 胡璧合;吳幼麟 | zh_TW |
dc.contributor.oralexamcommittee | Pi-Ho Hu;You-Lin Wu | en |
dc.subject.keyword | 金氧半,開路電壓,短路電流,軟性崩潰, | zh_TW |
dc.subject.keyword | MIS,Open-Circuit Voltage,Short-Circuit Current,Soft Breakdown, | en |
dc.relation.page | 69 | - |
dc.identifier.doi | 10.6342/NTU202300778 | - |
dc.rights.note | 同意授權(全球公開) | - |
dc.date.accepted | 2023-06-20 | - |
dc.contributor.author-college | 電機資訊學院 | - |
dc.contributor.author-dept | 電子工程學研究所 | - |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-111-2.pdf | 3.22 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。