低維度二六族半導體核殼奈米線之成長與特性分析

Abstract

由於在製作電子和光電元件應用方面有很大的潛力，最近低維度半導體例如奈米線、奈米柱和奈米管已經吸引很多人的注意。在此論文中，我們報告有關於II-VI族奈米線的成長及特性分析和光電性質。在ZnO 奈米線和ZnO/ZnTe核殼奈米線的研究方面，我們使用化學氣相沉積法和有機金屬化學氣相沉積法，成功地製作出ZnO/ZnTe核殼奈米線結構。我們使用多種結構分析儀器也確認樣品具有良好結晶結構。在光學儀器分析下，結果也顯示樣品是具有好的光學性質。然後我們取單根ZnO/ZnTe核殼奈米線製作成單根的電晶體，研究它的電學特性，結果顯示出施加的電壓可以控制它的電流大小。除了在ZnO/ZnTe系統中，我們也成功地成長出ZnO/ZnSe核殼奈米線。這ZnO/ZnSe核殼奈米線也是具有好的結晶結構和光學性質。

Because of their potential applications in making electronic and opto-electronic devices, low-dimensional semiconductor systems such as nanowires, nanorods and nanotubes have attracted great attention recently. In this thesis we report our studies on the growth and characterization of II-VI semiconductor nanowires and the opto-electronic properties of these nanowires. ZnO/ZnTe core-shell nanowires were successfully fabricated by first growing the ZnO core then ZnTe shell by CVD and MOCVD, respectively. Structure characterization of the core-shell nanowires were carried out by using X-ray diffraction, transmission electron microscope and scanning electron microscope and the core-shell nanowires were found to have good crystalline quality. Optical properties of nanowires were studies by using Raman scattering, confocal laser scanning microscope and the transmission measurements and the results also indicate the nanowires have good optical properties. The nanowire is then made into a single nanowire transistor and its electric properties were studied and the result indicates that it has proper biasing properties and can be use as a functional transistor. In addition to the ZnO/ZnTe system, the ZnO/ZnSe core-shell nanowires were also grown successfully by using the same growth methods. The ZnO/ZnSe nanowires were also found to have good crystal structure and optical properties.