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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 李尉彰 | zh_TW |
dc.contributor.advisor | Wei-Chang Li | en |
dc.contributor.author | 黃品淳 | zh_TW |
dc.contributor.author | Pin-Chun Huang | en |
dc.date.accessioned | 2023-06-20T16:14:03Z | - |
dc.date.available | 2023-11-09 | - |
dc.date.copyright | 2023-06-20 | - |
dc.date.issued | 2023 | - |
dc.date.submitted | 2023-02-13 | - |
dc.identifier.citation | Y. Hao, J. Liang, H. Kang, W. Yuan, and H. Chang, "A micromechanical mode-localized voltmeter," IEEE Sensors Journal, vol. 21, no. 4, pp. 4325-4332, 2020.
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Kihara, "Design and analysis of a tower structure with a tuned mass damper," in Proceedings 9th World Conference of Earthquake Engineering, Tokyo-Kyoto, Japan, 1988, vol. 8, pp. 415-420. Y. Tamura, "Wind-induced vibration of tall towers and practical applications of tuned sloshing damper," in Proceedings, Symposium/Workshop on Serviceability of Buildings (Movement, Deformations, Vibrations), University of Ottawa, Canada, 1988, 1988, vol. 1. M. Manav, G. Reynen, M. Sharma, E. Cretu, and A. Phani, "Ultrasensitive resonant MEMS transducers with tuneable coupling," Journal of Micromechanics and Microengineering, vol. 24, no. 5, p. 055005, 2014. H.-S. Zheng, C.-P. Tsai, T.-Y. Chen, and W.-C. Li, "CMOS-MEMS resonators with sub-100-nm transducer gap using stress engineering," in 2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS), 2022: IEEE, pp. 13-16. | - |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/87590 | - |
dc.description.abstract | 本研究於CMOS-MEMS 0.35-µm製程平台利用基於調諧質量阻尼器(Tuned-Mass-Damper)之模態局部化結構,設計並製作了微機械電壓感測器。本研究之電壓感測器以兩端固定樑(clamped-clamped beam)為主要之共振器,其旁邊嵌入微小型懸臂樑,用來作為抗諧振調諧質量阻尼器之結構,成功地衰減了基模之頻率響應。
本研究之感測機制為給予一輸入電壓以造成剛度變化來擾動基於調諧質量阻尼器之模態局部化共振器。當感測電壓施加至感測電極時,模態局部化共振器會受到剛度擾動,進而導致模態發生劇烈變化,使達成模態局部化(mode-localization)之效果。此外,本研究建立理論模型來分析微小型懸臂樑之參數變化對於頻率響應曲線所造成之影響。此微小型調諧質量阻尼器懸臂樑與傳統之模態局部化共振器相比較,具有更小之等效質量與剛度,並且在給定一特定擾動下,會響應更大之模態局部化效應及達到更高之靈敏度。 在本研究中,實驗結果驗證模態局部化電壓感測器加入微小剛度擾動至懸臂樑後,元件之振幅變化靈敏度高達3,035,810 ppm/V,與共振頻率變化之靈敏度(3,376 ppm/V)相差約900倍。另一方面,本研究在單一共振器的設計上使用微小型之調諧質量阻尼器結構,而非使用傳統的兩個或多個相同之對稱耦合結構[1]。因此,本研究提出一種更簡單的結構設計,其感應之結構占用空間小了約55倍。最後,本研究可將此基於調諧質量阻尼器之模態局部化共振器作為電壓感測器,應用於實驗室之微小電訊號檢測。 | zh_TW |
dc.description.abstract | This research demonstrates a micromechanical voltmeter, utilizing a tuned-mass-damper (TMD) based mode-localized structure in a CMOS-MEMS 0.35-µm 2P4M process platform. The TMD voltmeter consists of a micromechanical clamped-clamped beam (CC-beam) as a main resonator and a miniaturized T-shaped TMD structure with properly designed dimensions on the side acting as two cantilevers operating at the same frequency of the CC-beam, successfully attenuate the frequency response of the fundamental mode.
The mechanism of this work is to introduce the TMD resonator with a stiffness perturbation by the input sensing voltage. The mode-localization effect is caused by the electrical stiffness that is introduced into the resonator when a sensing voltage is applied to the sensing electrode. This research also used a theoretical model to simulate the varying parameters of the miniaturized TMD cantilevers resulting in the frequency response of the resonator. In comparison to conventional mode-localized resonators, the miniaturized TMD design has a smaller effective mass and stiffness and would respond to a stronger mode localization effect under a specific perturbation and attain higher sensitivity. In this research, the measured results show that the amplitude deviation reaches 3,035,810 ppm/V, which is 900 times greater than the resonance frequency variation of 3,376 ppm/V when a sensing voltage is applied to alter the stiffness of the TMD cantilever beams. On the other hand, this research presents a simpler structural design with 55× smaller footprints. Instead of two or more identical resonators used in the conventional counterparts, the use of the tuned-mass-damper (TMD) asymmetrical structures would not only reserve the area of the device due to simple coupled structural topologies but also enable higher sensitivity due to the miniaturized TMDs. Thus, the TMD sensors can be integrated to build on-chip voltmeters for laboratory-based weak electrical detection. | en |
dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-06-20T16:14:03Z No. of bitstreams: 0 | en |
dc.description.provenance | Made available in DSpace on 2023-06-20T16:14:03Z (GMT). No. of bitstreams: 0 | en |
dc.description.tableofcontents | 口試委員會審定書 i
誌謝 ii 中文摘要 iv Abstract v 目錄 vi 圖目錄 viii 表目錄 xi 第一章 前言 1 1-1 研究背景與趨勢 1 1-2 文獻回顧 1 1-2-1 微機電共振器 1 1-2-2 共振式感測器元件 3 1-2-3 模態局部化 3 1-3 研究動機 3 1-4 論文架構 4 第二章 共振感測元件設計、模型、模擬 5 2-1 模態局部化現象 5 2-1-1 調諧質量阻尼器 7 2-1-2 對稱耦合共振器與調諧質量阻尼共振器之頻率響應比較 9 2-2 電容式驅動共振器分析 10 2-2-1 共振器之設計與運作原理 10 2-2-2 共振器之等效質量阻尼彈簧系統 11 2-2-3 平行電容板之驅動靜電力 17 2-2-4 等效電路系統轉換 24 2-3 電剛性ke 27 2-4 模態局部化共振器設計與分析 29 2-4-1 模態局部化共振系統之特徵解 29 2-4-2 對稱耦合共振器與調諧質量阻尼共振器靈敏度之比較 32 2-5 狀態空間方法分析 34 2-6 有限元素法模擬與應證 38 第三章 元件製程步驟 41 3-1 CMOS-MEMS 0.35-µm製程 41 3-2 後製程濕蝕刻原理機制 42 3-2-1 蝕刻 42 3-2-2 濕蝕刻步驟 43 第四章 實驗結果與討論 45 4-1 量測架設 45 4-2 元件之頻率響應量測 47 4-3 以感測電壓改變剛度之輸出訊號量測 49 第五章 結論與未來展望 52 5-1 結論 52 5-2 未來展望 52 參考文獻 54 | - |
dc.language.iso | zh_TW | - |
dc.title | 基於調諧質量阻尼器之CMOS-MEMS模態局部化電壓感測器 | zh_TW |
dc.title | CMOS-MEMS Tuned-Mass-Damper(TMD) Based Mode-Localized Volmeters | en |
dc.type | Thesis | - |
dc.date.schoolyear | 111-1 | - |
dc.description.degree | 碩士 | - |
dc.contributor.oralexamcommittee | 張培仁;胡毓忠;蔡燿全 | zh_TW |
dc.contributor.oralexamcommittee | Pei-Zen Chang;Yuh-Chung Hu;Yao-Chuan Tsai | en |
dc.subject.keyword | 調諧質量阻尼器,CMOS-MEMS,模態局部化,微機械電壓感測器,兩端固定樑式共振器,剛度擾動, | zh_TW |
dc.subject.keyword | Micromechanical Voltmeter,Tuned-Mass-Damper,CMOS-MEMS,Clamped-Clamped Beam,Stiffness Perturbation,Mode-Localization, | en |
dc.relation.page | 58 | - |
dc.identifier.doi | 10.6342/NTU202300391 | - |
dc.rights.note | 同意授權(限校園內公開) | - |
dc.date.accepted | 2023-02-14 | - |
dc.contributor.author-college | 工學院 | - |
dc.contributor.author-dept | 應用力學研究所 | - |
dc.date.embargo-lift | 2028-02-09 | - |
顯示於系所單位: | 應用力學研究所 |
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