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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林致廷(Chih-Ting Lin) | |
| dc.contributor.author | Yu-Xin Lin | en |
| dc.contributor.author | 林煜鑫 | zh_TW |
| dc.date.accessioned | 2023-03-19T23:55:07Z | - |
| dc.date.copyright | 2022-08-22 | |
| dc.date.issued | 2022 | |
| dc.date.submitted | 2022-08-19 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/86426 | - |
| dc.description.abstract | 在現今的半導體發展中，一直遵循著摩爾定律的節奏發展，然而先進製程遇到的問題越來越嚴苛，因此各家大廠期望從各個面向解決問題，石墨烯由於優異的材料特性，便受到熱烈的研究，而在本文的研究中，主要是針對金屬/石墨烯接面的接觸電阻做探討。影響石墨烯接觸電阻的面向很多，然而最主要影響接面仔子傳輸的便是石墨烯的功函數，而本文主要觀察基板的置換對石墨烯的功函數的調變。 第一部分，本文利用最廣為使用量測接觸電阻的方法傳輸線法(TLM)進行量測，以300nm SiO2為基準基板，量測出的結果特徵接觸電阻率為〖10〗^3~〖10〗^4Ω*um附近，與參考文獻的數值吻合，另外並針對石墨烯的退化(Degradation)、背閘極偏壓(Back-Gate Bias)、以及量測時做造成的誤差進行探討。本文發現石墨烯會隨著時間的經過，材料內的碳原子與大氣中的分子產生鍵結，使得石墨烯的電阻率受到影響，造成接觸電阻值的上升。而石墨烯也會因給予不同的背閘極偏壓，費米能接的位置不同，有不同的電阻率，因此會得到不同的接觸電阻值，以及在量測時因下針的位置或角度，會有些微量測上的誤差。 第二部分是針對石墨烯轉印至不同基板時，由於石墨烯厚度非常薄，因此環境因素會容易影響到石墨烯的材料特性，我們也根據KPFM去量測石墨烯在不同基板上的表面電位，並推得功函數，得到在Si3N4、HfO2、TiO2上，皆有功函數被調變的結果，推測原因為石墨烯在與基板分子接觸時，會因為極性的關係，導致原子之間發生載子流動的現象，進而造成石墨烯功函數會有變化。而本文的最後，也探討出若欲以基板面向去改善石墨烯的接觸電阻，應選用對石墨烯產生散射較小的基板。 | zh_TW |
| dc.description.abstract | When the device scale down , short channel effect will more heavier because the weak gate control . Every foundry fab are try to slove the problem from many aspects . 2D material is popular because its well-performed material characteristic . In this study , we are focus on the contact resistance between graphene and metal contact . And graphene work function is the most affecttive factor of contact resistance . So this work, we observe the graphene work function on different substrate . First , we used the TLM measurement method to measure graphene/titanium contact resistance on 300nm SiO2 substrate . Specific contact resistance we measurement is about 〖10〗^3~〖10〗^4Ω*um . It’s matching to other reference . And we also discuss the degradation , back-gate , and the measurement error effect on the graphene contact resistance . We find that graphene will degrade as time goes on because the carbon atom is interact with hydrogen and oxygen atom . It will turn graphene into graphene oxide . And different back-gate bias will let graphene have different density of state(DOS) , it will cause variation conductivity . Measurement result also have error because the measurement angle and position . We also transfer graphen on different substrate , and used KPFM to measure the graphene work function . We find that graphene work function on Si3N4 , HfO2 and TiO2 substrate are get more n-type doping result . We assume that because the polarity will cause charge transfer between metal and graphene . And it will let graphene work function changing . Eventurally , if we want to improve the contact resistance form contact substrate . High mobility substrate is best choice. | en |
| dc.description.provenance | Made available in DSpace on 2023-03-19T23:55:07Z (GMT). No. of bitstreams: 1 U0001-1708202216415300.pdf: 2836805 bytes, checksum: 43536e5fe05caf99681494a9ad764c18 (MD5) Previous issue date: 2022 | en |
| dc.description.tableofcontents | 口試委員審定書 …………………………………………………………I 誌 謝 …………………………………………………………………II 摘 要 …………………………………………………………………III Abstract ………………………………………………………………IV 目 錄 …………………………………………………………………V 圖目錄 ………………………………………………………………VII 表 目 錄 ……………………………………………………………….XI 第一章 緒論 ……………………………………………………………1 1.1 大綱 ………………………………………………………….1 1.2 二維材料簡介………………………………………………….2 1.3 研究動機 …………………………………………………….…4 1.4 論文架構 …………………………………………………….…5 第二章 文獻回顧 ………………………………………………7 2.1 章節介紹 …………………………………………………7 2.2 石墨烯的介紹…………………………………………………8 2.3金屬/半導體接面…………………………………………16 2.4費米能階釘札效應………………………………….…17 2.5改善金屬/二維材料接觸電阻的方法…18 2.6章節結論…………………………………………...…..24 第三章 實驗儀器介紹與方法………………………25 3.1 接觸電阻量測方法….…….……………………25 3.2 使用儀器與機台介紹……………………………29 第四章 實驗步驟與結果………………………………35 4.1 置備石墨烯步驟流程與材料分析……35 4.2 元件製程流程…………………………………………37 4.3 接觸電阻量測….…….……………………………40 4.4 結果討論……………………………………………………58 第五章 結論與未來展望…………………………….64 5.1結論…………….…….……………………………..………64 5.2未來展望………………………………………………………64 第六章 參考文獻……………………………………………65 | |
| dc.language.iso | zh-TW | |
| dc.subject | 功函數 | zh_TW |
| dc.subject | 功函數 | zh_TW |
| dc.subject | 載子遷移率 | zh_TW |
| dc.subject | 電阻率 | zh_TW |
| dc.subject | 接觸電阻 | zh_TW |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | 接觸電阻 | zh_TW |
| dc.subject | 電阻率 | zh_TW |
| dc.subject | 載子遷移率 | zh_TW |
| dc.subject | specific contact resistance | en |
| dc.subject | mobility | en |
| dc.subject | work function | en |
| dc.subject | Graphene | en |
| dc.subject | Graphene | en |
| dc.subject | contact resistance | en |
| dc.subject | specific contact resistance | en |
| dc.subject | mobility | en |
| dc.subject | work function | en |
| dc.subject | contact resistance | en |
| dc.title | 基板材質對於石墨烯/金屬接面電阻影響之探討 | zh_TW |
| dc.title | Study of contact resistance about graphene/metal with variable substrate | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 110-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張子璿(Tzu-Hsuan Chang),溫偉源(Wei-Yen Woon) | |
| dc.subject.keyword | 石墨烯,接觸電阻,電阻率,載子遷移率,功函數, | zh_TW |
| dc.subject.keyword | Graphene,contact resistance,specific contact resistance,mobility,work function, | en |
| dc.relation.page | 68 | |
| dc.identifier.doi | 10.6342/NTU202202517 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2022-08-19 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2024-08-01 | - |
| 顯示於系所單位： | 電子工程學研究所 | |
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| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| U0001-1708202216415300.pdf | 2.77 MB | Adobe PDF | 檢視/開啟 |
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