18-26-GHz 倍頻器及 38-GHz 4096-QAM 人工智慧收發機 EVM 與相位雜訊之研究

Abstract

在第五代行動通訊(5G)之中,為了追求高傳輸速率的需求與大頻寬或是更複雜的調變,FR2 頻段中的 28 GHz 以及 38 GHz。在無線通訊系統中,收發機中得到好的 EVM 跟 BER 是相當重要且關鍵,本篇論文著重於人工智慧調整 EVM 跟 BER的研究。 本論文分為二個部分:第一部分(第二章)為一個應用在 Ka-band 之搭配人工智慧的 IQ 收發機。此部分展示了一個應用於 Ka-band 低中頻收發機 (1.5 GHz、100 MHz)在 33-40 GHz 的 EVM 跟 BER 表現,以及討論不同 IQ 不平衡和相位雜訊影的情況下 EVM 的變化。由於相位偏差會影響混頻器 EVM 跟 BER 的表現,因此由混頻器在 RF 的 IQ 端加入一對可變電容,藉以自動調整相位差異以及抵抗 PVT(製程、電壓、溫度)變異。經過可變電容的調整之後,此設計鏡像抑制寬頻的效果,從 33 到 40 GHz BER 和 EVM 的優化表現，再以人工智慧的輔助下，在運作過程中，實現自動優化 BER 和 EVM。在 4096-QAM 的調變訊號傳輸應用中，進一步將傳輸頻寬提升至 800 個通道，形成多通道系統。 第二部分(第三章)提出一個應用於 K-band 使用 180-nm 互補式金氧半導體製程之倍頻器。此倍頻器在直流功耗為 19 毫瓦的情況下展示了 7.3 dBm 的輸出功率,以及 30dB 以上的基頻抑制,以達到更好的通訊傳輸。

In the fifth generation of mobile communication (5G), 28 GHz and 38 GHz in the FR2 band are used to pursue high transmission rates and large bandwidths or more complex modulations. This paper focuses on the study of EVM and BER adjustment by artificial intelligence. This paper is divided into two parts: the first part (Chapter 2) is an IQ transceiver applied to Ka-band with artificial intelligence. This chapter shows the EVM and BER performance of a Ka-band low IF transceiver (1.5 GHz, 100 MHz) at 33-40 GHz, and discusses the variation of EVM with different IQ imbalance and phase noise. Since the phase deviation affects the performance of the mixer EVM and BER, a pair of varactors is added to the IQ path of the RF by the mixer to automatically adjust the phase deviation and resist the PVT (process, voltage, temperature) variation. After the adjustment of the varactors, the design mirrors the effect of broadband suppression, optimizing the performance of BER and EVM from 33 to 40 GHz, and then automatically optimizing BER and EVM during operation with the aid of human intelligence. In 4096-QAM modulated signal transmission applications, the transmission bandwidth is further increased to 800 channels, forming a multi-channel system. The second part (Chapter 3) presents a frequency doubler for K-band applications using 180-nm complementary gold-oxygen semiconductor process. This doubler demonstrates an output power of 7.3 dBm at a DC power consumption of 19 mW, and more than 30 dB of fundamental rejection for better communication transmission.