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  1. NTU Theses and Dissertations Repository
  2. 理學院
  3. 物理學系
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/82310
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor陳永芳(Yang-Fang Chen)
dc.contributor.authorChia-Lin Tsaien
dc.contributor.author蔡佳霖zh_TW
dc.date.accessioned2022-11-25T07:29:04Z-
dc.date.available2023-08-07
dc.date.copyright2021-11-06
dc.date.issued2021
dc.date.submitted2021-08-06
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Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers. Nat. Mater., 11(9), 795 (2012) Pang, C., Lee, G. Y., Kim, T. I., Kim, S. M., Kim, H. N., Ahn, S. H., Suh, K. Y. A flexible and highly sensitive strain-gauge sensor using reversible interlocking of nanofiber. Nat Mater., 9(10), 795 (2012) https://en.wikipedia.org/wiki/Polydimethylsiloxane https://en.wikipedia.org/wiki/Poly(methyl_methacrylate) K. H. Kim, S. Y. Bae, Y. S. Kim, J. A. Hur, M. H. Hoang, T. W. Lee, M. J. Cho, Y. Kim, M. Kim, and J. I. Jin, Highly photosensitive J-aggregated single-crystalline organic transistors, Adv. Mater. 23, 3095-3099 (2011). T. P. I. Saragi, R. Pudzich, T. Fuhrmann, and J. Salbeck, Organic phototransistor based on intramolecular charge transfer in a bifunctional spiro compound, Appl. Phys. Lett. 84, 2334-2336 (2004). M. Y. Cho, S. J. Kim, Y. D. Han, D. H. Park, K. H. Kim, D. H. Choi, and J. 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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/82310-
dc.description.abstract我們在此提出一種可透過光/電/磁三種變因控制的雙閘式雙極有機光電晶體。此光電晶體以垂直方式整合有機太陽能電池(ITO/ZnO/P3HT:PC_61BM/MoO_3/Ag)、電阻式隨機存取記憶體(Ag/PMMA/Au)及具金字塔結構的磁電元件(FeNi/PDMS/AgNWs)。此元件具有上述三種元件分別的特性,透過對於光、電場、磁場的反應形成雙閘式光電晶體。和傳統的光電晶體相比,此元件具有超快的光響應時間、可調節的光電流、高開關電流比率及非接觸式人機互動等特性,這些獨特的特性均有利於高速光通訊及電路微型化。此外,這種光電晶體具有獨特的數位邏輯特性,使其在光通訊及資訊安全領域的應用具有莫大的潛力。zh_TW
dc.description.provenanceMade available in DSpace on 2022-11-25T07:29:04Z (GMT). No. of bitstreams: 1
U0001-0608202101242500.pdf: 2664390 bytes, checksum: e732f59643337fa871f6e1ba5c3d3b19 (MD5)
Previous issue date: 2021
en
dc.description.tableofcontents"口試委員會審定書 ...................................................................I 致謝 .............................................................................II 中文摘要 .........................................................................III ABSTRACT ..........................................................................IV Content ...........................................................................VI List of Figure and Tables .........................................................X Chapter 1 Introduction ..........................................................1 Reference...........................................................................4 Chapter 2 Theoretical Background.................................................9 2.1 Solar Spectrum ..........................................................9 2.2 Models of solar cells ..................................................11 2.2.1 Ideal model .......................................................13 2.2.2 Non-ideal model ...................................................14 2.3 Parameters of solar cells ..............................................15 2.3.1 Quantum efficiency (QE) ...........................................15 2.3.2 Spectral response (SR) .............................................16 2.3.3 Short circuit current density (Jsc) ................................16 2.3.4 Open circuit voltage (Voc) .........................................17 2.3.5 Power convert efficiency (PCE, η) and Fill faceor (FF) .............18 2.4 Organic solar cells (OSCs)...............................................19 2.4.1 Organic semiconductor ..............................................19 2.4.2 Structures of OSCs .................................................21 2.4.3 Photovoltaic effect ................................................23 2.5 Resistive random access memory (RRAM)....................................24 2.5.1 Resistive switching behaviors ......................................25 2.5.2 Resistive switching mechanisms .....................................26 2.6 Megnetoelectronic device ................................................28 2.6.1 Flexible electronics ...............................................28 2.6.2 The stretchable resistive sensor ...................................30 Reference..........................................................................32 Chapter 3 Experimental Details ..................................................35 3.1 Instrument ..............................................................35 3.1.1 The list of equipment ..............................................35 3.1.2 Scanning electron microscope (SEM) .................................36 3.1.3 Solar simulator ....................................................37 3.1.4 Thermal evaporation ................................................38 3.2 Materials ...............................................................40 3.2.1 The list of materials ..............................................40 3.2.2 P3HT ...............................................................41 3.2.3 PC61BM .............................................................41 3.2.4 PMMA ...............................................................42 3.2.5 Polydimethylsiloxane (PDMS) ........................................42 3.2.6 Silver nanowires (AgNWs) ...................................................43 3.3 Material preparation ....................................................43 3.3.1 Preparation of ITO glass ...........................................43 3.3.2 Preparation of Sol-gel-derived ZnO .................................44 3.3.3 Preparation of P3HT: PC61BM solution ...............................44 3.4 Device fabrication ......................................................44 3.4.1 Organic solar cells ................................................44 3.4.2 RRAM cells .........................................................45 3.4.3 Flexible magnetoelectronic device ..................................45 3.4.4 Phototransistor ....................................................46 Reference..........................................................................47 Chapter 4 Result and Discussion .................................................48 4.1 Characteristics of resistive random access memory .......................48 4.2 Characteristics of organic solar cell ...................................50 4.3 Characteristics of flexible magnetoelectronic device ....................52 4.4 Characteristics of the double-gate phototransistor.......................54 4.5 Demonstration of potential application...................................64 Reference..........................................................................69 Chapter 5 Conclusion ............................................................71 "
dc.language.isoen
dc.subject光電晶體zh_TW
dc.subject磁電元件zh_TW
dc.subject電阻式隨機存取記憶體zh_TW
dc.subject有機太陽能電池zh_TW
dc.subject光通訊zh_TW
dc.subject超快光響應zh_TW
dc.subject非接觸式元件zh_TW
dc.subjectmagnetoelectronic deviceen
dc.subjectdual-gate phototransistoren
dc.subjectinformation encryptionen
dc.subjectLi-Fi optical communicationen
dc.subjectultra-fast responseen
dc.subjecttouchlessen
dc.title光/電/磁可控雙閘式雙極有機光電晶體zh_TW
dc.titleAn optical/electrical/magnetic controllable dual-gate phototransistoren
dc.date.schoolyear109-2
dc.description.degree碩士
dc.contributor.coadvisor許芳琪(Fang-Chi Hsu)
dc.contributor.oralexamcommittee林泰源(Hsin-Tsai Liu),(Chih-Yang Tseng)
dc.subject.keyword超快光響應,光通訊,有機太陽能電池,電阻式隨機存取記憶體,光電晶體,磁電元件,非接觸式元件,zh_TW
dc.subject.keywordultra-fast response,Li-Fi optical communication,information encryption,dual-gate phototransistor,magnetoelectronic device,touchless,en
dc.relation.page71
dc.identifier.doi10.6342/NTU202102134
dc.rights.note同意授權(全球公開)
dc.date.accepted2021-08-06
dc.contributor.author-college理學院zh_TW
dc.contributor.author-dept物理學研究所zh_TW
dc.date.embargo-lift2023-08-07-
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