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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
| dc.contributor.author | Pin-Ying Li | en |
| dc.contributor.author | 李品穎 | zh_TW |
| dc.date.accessioned | 2022-11-24T09:27:00Z | - |
| dc.date.available | 2022-11-24T09:27:00Z | - |
| dc.date.copyright | 2021-11-05 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-10-11 | |
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Proc.SPIE. [25]Ambacher, O., B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell and M. Stutzmann (1999). 'Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures.' Journal of Applied Physics 87(1): 334-344. [26]He, X.-G., D.-G. Zhao and D.-S. Jiang (2015). 'Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression.' Chinese Physics B 24(6): 067301. [27]Sacconi, F., A. D. Carlo, P. Lugli (2001). 'Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs.' IEEE Transactions on Electron Devices 48(3): 450-457. [28]Smorchkova, I. P., C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck and U. K. Mishra (1999). 'Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy.' Journal of Applied Physics 86(8): 4520-4526. [29]https://eng.libretexts.org/Bookshelves/Materials_Science/Supplemental_Modules_(Materials_Science)/Semiconductors/Metal-Semiconductors_Contacts [30]https://warwick.ac.uk/fac/sci/physics/current/postgraduate/regs/mpagswarwick/ex5/devices/hetrojunction/ohmic/ [31]http://web.nuu.edu.tw/~hsuch/download/semiconductor%20device5.pdf [32]https://www.tisamax.com/article/view/244 [33]Ramesh, C., P. Tyagi, B. S. Yadav, S. Ojha, K. K. Maurya, M. Senthil Kumar and S. S. Kushvaha (2018). 'Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE.' Materials Science and Engineering: B 231: 105-114. [34]Yadav, Y., B. B. Upadhyay, M. Meer, N. Bhardwaj, S. Ganguly and D. Saha (2019). 'Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTs.' IEEE Electron Device Letters 40: 67-70. [35]Benakaprasad, B., A. M. Eblabla, X. Li, K. G. Crawford and K. Elgaid (2020). 'Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon.' IEEE Transactions on Electron Devices 67(3): 863-868. [36]Luo, J., S.-L. Zhao, M.-H. Mi, W.-W. Chen, B. Hou, J.-C. Zhang, X.-H. Ma and Y. Hao (2016). 'Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor.' Chinese Physics B 25(2): 027303. [37]Song, L., K. Fu, J. Zhao, G. Yu, R. Hao, X. Zhang, F. Chen, Y. Fan, Y. Cai and B. Zhang (2018). 'Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs.' AIP Advances 8(3): 035213. [38]https://attolight.com/santis-300/ [39]Chen, P.-H., V.-C. Su, S.-H. Wu, R.-M. Lin and C.-H. Kuan (2018). 'Defect reduction in GaN on dome-shaped patterned-sapphire substrates.' Optical Materials 76: 368-374. [40]Shen, J., D. Zhang, F.-H. Zhang and Y. Gan (2018). 'AFM characterization of patterned sapphire substrate with dense cone arrays: Image artifacts and tip-cone convolution effect.' Applied Surface Science 433: 358-366. [41]http://www.finewinwafers.com/4inch-Cplane-Patterned-Sapphire-Substrate-PSS-pd49435034.html | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81765 | - |
| dc.description.abstract | 近年來，氮化鋁鎵/氮化鎵高電子遷移率電晶體以氮化鎵材料之寬能隙、高電子遷移率、高崩潰電場等優秀特性，在高頻以及高功率元件的應用上逐漸展露頭角，有望取代傳統矽基元件。 本論文研究利用濺鍍法(Sputtering)以及有機金屬化學氣相沉積法(MOCVD)此兩種方式成長氮化鋁緩衝層，以形成高磊晶品質之氮化鎵，並進行氮化鋁鎵/氮化鎵高電子遷移率電晶體之製作。第一部分為藉由XRD量測，分析其半高寬量測結果以計算出氮化鎵之差排密度，進而比較及證實透過濺鍍法成長緩衝層再磊晶之氮化鎵晶體品質較佳。針對元件電極，設計了相異的源極到汲極距離(LSD)以增進電晶體特性；在電性量測的結果，在LSD為8μm、VG為2V時，以Sputtering和MOCVD成長緩衝層製作出之元件的最大汲極飽和電流分別為1.98、58mA/mm，轉導值為0.468、26mS/mm，晶體品質與元件特性非正相關。 相較於第一部份透過緩衝層改善氮化鎵晶體品質，此論文亦透過圖案化藍寶石基板改變磊晶條件，因此第二部分為對藍寶石基板以濕式蝕刻方式實現奈米級結構之開發，後送交中科院磊晶。根據電子顯微鏡之結果，不同圖案會有不同的磊晶結果，證實圖案化藍寶石基板會影響晶體品質。 對比於第二部份，第三部分則為研究乾式蝕刻圖案化藍寶石基板技術，此研究目前可以製備出同為奈米級且具備高深寬比結構之藍寶石基板，其圖形尺寸最小直徑約為200nm、深度約為600nm。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T09:27:00Z (GMT). No. of bitstreams: 1 U0001-0810202103341800.pdf: 7911558 bytes, checksum: ce50c5ef4356d42194ae427345af09ed (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | 口試委員審定書 # 致謝 i 中文摘要 ii Abstract iii 目錄 v 圖目錄 vii 表目錄 x 第一章 緒論 1 1.1 前言 1 1.2 研究動機 2 1.3 論文架構 7 第二章 理論基礎 8 2.1 藍寶石基板 8 2.2 圖案化藍寶石基板 10 2.2.1 蝕刻方式 10 2.2.2 濕式蝕刻原理 10 2.2.3 乾式蝕刻原理 12 2.3 氮化鎵薄膜 17 2.3.1 晶體結構 17 2.3.2 應力 18 2.3.3 錯位差排 19 2.4 氮化鋁鎵/氮化鎵異質接面 22 2.4.1 極化效應 22 2.5 金屬-半導體接觸原理 27 2.5.1 歐姆接觸原理 27 2.5.2 蕭特基接觸原理 29 2.6 X光繞射分析原理 31 第三章 實驗設計與元件製備 32 3.1 HEMT元件設計介紹 32 3.1.1 磊晶結構 32 3.1.2 電晶體光罩布局 33 3.2 圖案化藍寶石基板設計 33 3.3 元件製備流程 34 3.3.1 AlGaN/GaN HEMT製作 34 3.3.2 圖案化藍寶石基板製作 40 第四章 實驗結果與分析 44 4.1 HEMT元件磊晶品質 44 4.2 HEMT元件電性量測 45 4.2.1 量測系統簡介 45 4.2.2 直流特性 45 4.2.3 TLM量測 51 4.3 濕式蝕刻圖案化藍寶石基板 53 4.4 乾式蝕刻圖案化藍寶石基板 58 第五章 結論與未來展望 61 參考文獻 62 | |
| dc.language.iso | zh-TW | |
| dc.subject | 差排密度 | zh_TW |
| dc.subject | XRD分析 | zh_TW |
| dc.subject | 氮化鋁鎵/氮化鎵高電子遷移率電晶體 | zh_TW |
| dc.subject | 圖案化藍寶石基板 | zh_TW |
| dc.subject | AlGaN/GaN HEMT | en |
| dc.subject | Patterned Sapphire Substrates | en |
| dc.subject | XRD | en |
| dc.subject | Dislocation density | en |
| dc.title | 具不同緩衝層之氮化鋁鎵/氮化鎵高電子遷移率電晶體與乾式蝕刻圖案化藍寶石基板之研究 | zh_TW |
| dc.title | Investigation of dry etching patterned-sapphire substrates and AlGaN/GaN HEMTs on various buffer layers | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 蘇文生(Vin-Cent Su) | |
| dc.contributor.oralexamcommittee | 蘇炎坤(Hsin-Tsai Liu),孫建文(Chih-Yang Tseng),孫允武 | |
| dc.subject.keyword | 氮化鋁鎵/氮化鎵高電子遷移率電晶體,圖案化藍寶石基板,XRD分析,差排密度, | zh_TW |
| dc.subject.keyword | AlGaN/GaN HEMT,Patterned Sapphire Substrates,XRD,Dislocation density, | en |
| dc.relation.page | 66 | |
| dc.identifier.doi | 10.6342/NTU202103614 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2021-10-13 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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