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| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 鄭鴻祥(Hung-Hsiang Cheng) | |
| dc.contributor.author | Chen-Kai Huang | en |
| dc.contributor.author | 黃晨凱 | zh_TW |
| dc.date.accessioned | 2022-11-24T03:25:37Z | - |
| dc.date.available | 2021-09-11 | |
| dc.date.available | 2022-11-24T03:25:37Z | - |
| dc.date.copyright | 2021-09-11 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-09-06 | |
| dc.identifier.citation | [1]Yang, Fan, et al. 'Ultrathin broadband Germanium–graphene hybrid photodetector with high performance.' ACS applied materials interfaces 9.15 (2017): 13422-13429. [2] Guo, Xitao, et al. 'High-performance graphene photodetector using interfacial gating.' Optica 3.10 (2016): 1066-1070. [3] Yang, Fan, et al. 'Highly enhanced SWIR image sensors based on Ge1–x Sn x–Graphene heterostructure photodetector.' ACS Photonics 6.5 (2019): 1199-1206. [4] Zhang, Yongzhe, et al. 'Broadband high photoresponse from pure monolayer graphene photodetector.' Nature communications 4.1 (2013): 1-11. [5] Sun, Mengxing, et al. 'Heterostructured graphene quantum dot/WSe 2/Si photodetector wh suppressed dark current and improved detectivity.' Nano Research 11.6 (2018): 3233-3243. [6] Li, Xinming, et al. 'High detectivity graphene‐silicon heterojunction photodetector .' Small 12.5 (2016): 595-601. [7] Takenaka, Mitsuru, et al. 'Dark current reduction of Ge photodetector by GeO 2 surface passivation and gas-phase doping.' Optics express 20.8 (2012): 8718-8725. [8] Kang, Jian, et al. 'Suppression of dark current in GeO x-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation.' Optics express 23.13 (2015): 16967-16976. [9] Mueller, Thomas, Fengnian Xia, and Phaedon Avouris. 'Graphene photodetectors for high-speed optical communications.' Nature photonics 4.5 (2010): 297-301. [10] Fukushima, Shoichiro, et al. 'High responsivity middle-wavelength infrared graphene photodetectors using photo-gating.' Applied Physics Letters 113.6 (2018): 061102. [11] Geim, Andre K., and Konstantin S. Novoselov. 'The rise of graphene.' Nanoscience and technology: a collection of reviews from nature journals. 2010. 11-19. [12]What engineers need to know about graphene https://www.rs-online.com/designspark/what-engineers-need-to-know-about-graphene [13]Jena D. (2016) Graphene. In: Bhushan B. (eds) Encyclopedia of Nanotechnology. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9780-1_373 [14] Fuchs, Jean-Noel, and Mark Oliver Goerbig. 'Introduction to the physical properties of graphene.' Lecture notes 10 (2008): 11-12. [15] Yang, Gao, et al. 'Structure of graphene and its disorders: a review.' Science and technology of advanced materials 19.1 (2018): 613-648. [16] Sze, Simon M., Yiming Li, and Kwok K. Ng. Physics of semiconductor devices. John wiley sons, 2021. [17] Nomura, Kentaro, and Allan H. MacDonald. 'Quantum transport of massless Dirac fermions.' Physical review letters 98.7 (2007): 076602. [18] Novoselov, Kostya S., et al. 'Two-dimensional gas of massless Dirac fermions in graphene.' nature 438.7065 (2005): 197-200. [19] Zhang, Yuanbo, et al. 'Experimental observation of the quantum Hall effect and Berry's phase in graphene.' nature 438.7065 (2005): 201-204. [20] Zhu, Wenjuan, et al. 'Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene.' Physical Review B 80.23 (2009): 235402. [21]國家實驗研究院，”水平爐管技術資料”http://140.110.219.65/docs/devices/CF/T3_B.pdf [22] 【材料科技】奈米、馬達、印刷術｜case 科學報https://case.ntu.edu.tw/blog/?p=19649 [23] https://www.suss.com/en/products-solutions/mask-aligner/mjb4 [24] Awan, Tahir Iqbal, Almas Bashir, and Aqsa Tehseen. Chemistry of Nanomaterials: Fundamentals and Applications. Elsevier, 2020. [25]穿透式電子顯微鏡 科學Online https://highscope.ch.ntu.edu.tw/wordpress/?p=1599 [26] https://www.acsmaterial.com/trivial-transfer-graphenetm.html [27] Uchida, Yasutaka, et al. 'Low-temperature thermal-oxidation of silicon.' Japanese journal of applied physics 25.11R (1986): 1633. [28] https://eesemi.com/sio2si3n4.htm [29] Shi, Yumeng, et al. 'Photoelectrical response in single‐layer graphene transistors.' small 5.17 (2009): 2005-2011. [30] Shi, Yumeng, et al. 'Work function engineering of graphene electrode via chemical doping.' ACS nano 4.5 (2010): 2689-2694. [31] Luo, Fang, et al. 'High responsivity graphene photodetectors from visible to near-infrared by photogating effect.' AIP Advances 8.11 (2018): 115106. [32] Novoselov, Kostya S., et al. 'Electric field effect in atomically thin carbon films.' science 306.5696 (2004): 666-669. [33] https://zh.wikipedia.org/wiki/%E5%85%89%E7%94%B5%E4%BA%8C%E6%9E%81%E7%AE%A1 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/81001 | - |
| dc.description.abstract | 近年來二維材料已被廣泛研究與各種半導體結構做結合，其中最被廣泛研究的莫過於石墨烯，單層石墨烯的高電子遷移率是我們想要使用來突破現有光電領域中光偵測器的光電流及光響應度的材料之一，而石墨烯藉由濕式轉移(wet transfer)至晶圓頂部時，石墨烯表面吸附水氣及氧原子變成原生p型參雜，使石墨烯的費米能階(fermi level)從狄拉克點(dirac point)掉到價帶，載子濃度(carrier concentration)也發生改變。 為了計算載子濃度及費米能階確切的變化量，本論文在p-type Si和n-type Si上熱氧化成長一層非常薄的二氧化矽(SiO2)，厚度為2.7 nm，經過微影製程與蒸鍍金屬電極後，確認熱氧化層良好絕緣效果避免大量漏電流影響之後的閘極電壓調變效果，蓋上石墨烯後元件結構由上而下分別為(graphene/SiO2/Si)類似MOS電容並加上背電極(back gate)進行調變，閘極電壓改變時石墨烯費米能階移動，狀態密度(density of state)變少導電性變差，電阻變大，當p-type Si閘極電壓為0.9 V電阻最大，此時費米能階位於狄拉克點狀態密度最低，經由定量分析計算費米能階在狄拉克點下方0.313 eV，載子濃度為7.191x1012cm-2，電壓繼續增加電阻變大代表費米能階已經提升到導帶，n-type Si電阻最大值則發生在1 V費米能階在狄拉克點下方0.3297eV，載子濃度為7.98x1012 cm-2，證明石墨烯為p型，照光後由於能帶彎曲p-Si聚集光激發電子使石墨烯費米能階往下移動、n-Si聚集光激發電洞使石墨烯費米能階往上移動，最後改變波長與光強度量測光電流，光強度越強光電流會越大但會隨光強度上升趨近飽和，而光電流大小與波長關係則跟矽的光響應度有關在800-900 nm時光響應度最高光電流最大，1180 nm左右光電流變得非常小，因為此時光子能量已經小於矽的能隙無法繼續激發產生電子電洞對。 關鍵字：石墨烯、光電流、費米能階、狄拉克點、載子濃度、光響應度 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T03:25:37Z (GMT). No. of bitstreams: 1 U0001-0109202107334200.pdf: 3571724 bytes, checksum: 5f0e2bb7c07e9b5a78245254285e4d65 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | 口試委員審定書....................................................Ⅰ 誌謝..............................................................II 中文摘要.........................................................III Abstract..........................................................IV 目錄..............................................................Ⅵ 圖目錄...........................................................Ⅷ 表目錄...........................................................Ⅹ 第1章 基本介紹....................................................1 1.1 動機....................................................2 1.2 石墨烯..................................................4 1.3 矽基光電元件............................................9 第2章 儀器設備介紹...............................................12 2.1 製程設備...............................................13 2.1.1 水平爐管.........................................13 2.1.2 光罩對準機.......................................14 2.1.3 電子束金屬蒸鍍機.................................15 2.2 檢測儀器...............................................16 2.2.1 穿透式電子顯微鏡.................................16 2.3 量測系統...............................................18 2.3.1 電性量測系統.....................................18 2.3.2 光電量測系統.......................................19 第3章 元件製程..................................................23 3.1 樣品規格..............................................24 3.2 量測分析..............................................24 3.2.1 穿透式電子顯微鏡量測分析.......................24 3.3 製程步驟..............................................25 3.4 絕緣層................................................29 3.4.1 垂直方向電流........................................29 3.5 石墨烯轉移............................................31 第4章 結果與討論................................................32 4.1 暗電流及費米能階......................................33 4.2 光電特性量測..........................................38 4.2.1 照光後費米能階變化與討論........................38 4.2.2 光電流..........................................41 4.2.2.1 改變閘極電壓的光電流變化與討論..........41 4.2.2.2 改變光強度的光電流變化與討論............48 4.2.2.3 改變光波長的光電流變化與討論............49 第五章 結論與展望................................................51 5.1 結論..................................................52 5.2 未來展望..............................................53 參考文獻.........................................................54 | |
| dc.language.iso | zh-TW | |
| dc.subject | 光響應度 | zh_TW |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | 光電流 | zh_TW |
| dc.subject | 費米能階 | zh_TW |
| dc.subject | 狄拉克點 | zh_TW |
| dc.subject | 載子濃度 | zh_TW |
| dc.subject | Fermi level | en |
| dc.subject | light responsivity | en |
| dc.subject | carrier concentration | en |
| dc.subject | Dirac point | en |
| dc.subject | graphene | en |
| dc.subject | photocurrent | en |
| dc.title | 在矽基板使用石墨烯之光導體探討 | zh_TW |
| dc.title | Investigation of graphene on silicon hybrid photoconductor | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 洪冠明(Hsin-Tsai Liu),余英松(Chih-Yang Tseng) | |
| dc.subject.keyword | 石墨烯,光電流,費米能階,狄拉克點,載子濃度,光響應度, | zh_TW |
| dc.subject.keyword | graphene,photocurrent,Fermi level,Dirac point,carrier concentration,light responsivity, | en |
| dc.relation.page | 57 | |
| dc.identifier.doi | 10.6342/NTU202102925 | |
| dc.rights.note | 同意授權(限校園內公開) | |
| dc.date.accepted | 2021-09-07 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| Appears in Collections: | 電子工程學研究所 | |
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| File | Size | Format | |
|---|---|---|---|
| U0001-0109202107334200.pdf Access limited in NTU ip range | 3.49 MB | Adobe PDF |
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