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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 王暉(Huei Wang) | |
| dc.contributor.author | Ching-Min Hsu | en |
| dc.contributor.author | 許清閔 | zh_TW |
| dc.date.accessioned | 2022-11-24T03:24:22Z | - |
| dc.date.available | 2021-09-17 | |
| dc.date.available | 2022-11-24T03:24:22Z | - |
| dc.date.copyright | 2021-09-17 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-09-06 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80974 | - |
| dc.description.abstract | 本論文分為兩個部分，一個是寬頻的分佈式放大器，另一個是250 GHz的基板壓控振盪器。本論文的第一部分描述了一個分佈式放大器的電路設計，採用台積電65奈米金氧半場效電晶體製程。此電路由兩個傳統的分佈式放大器及一個串接單級分佈式放大器所組成，並且從中利用這兩個架構的優點。除此之外，此電路使用了多驅動級間耦合技術，增加高頻的頻寬及高頻的增益。此電路使用了 0.68 mm2 的晶片面積，直流功率消耗為 254 mW。此分佈式放大器提供了30 dB的增益，3dB 頻帶寬為14至91 GHz。此電路可顯示2435 GHz的增益頻寬積，在已發表的CMOS分佈式放大器中，是最高的數字。本論文的第二部分是一個250 GHz基板壓控振盪器，採用了台積電65奈米金氧半場效電晶體製程。此壓控振盪器利用基板的電壓改變調整電晶體的寄生電容容值，進而調整振盪器的振盪頻率。該電路的輸出功率為 -10.4 dBm，直流功率消耗僅有16.9 mW，得出直流轉換功率為0.53%。此電路的可調頻率範圍為244.5 GHz至252.5 GHz，電路面積為0.09 mm2。與其他已發表之200 GHz以上射頻電路的振盪器相比，此電路擁有低功耗、面積小、及高直流轉換功率等性能。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-24T03:24:22Z (GMT). No. of bitstreams: 1 U0001-0609202116072900.pdf: 5334087 bytes, checksum: 41340a7647903832cf81c767951c43e9 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | 口試委員會審定書 # 誌謝 i 中文摘要 iii ABSTRACT iv CONTENTS v LIST OF FIGURES vii LIST OF TABLES x Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 2 1.2.1 Broadband Distributed Amplifier 2 1.2.2 Voltage-Controlled Oscillator 3 1.3 Contributions 6 1.4 Thesis Organization 7 Chapter 2 A 14-91 GHz Distributed Amplifier in 65-nm CMOS technology 8 2.1 Introduction 8 2.1.1 Classification of Distributed Amplifier 9 2.1.2 Techniques of Distributed Amplifiers for Performance Improvement 14 2.2 Analysis and Design of Proposed Distributed Amplifier 18 2.2.1 Topology of Proposed Distributed Amplifier [3] 18 2.2.2 Circuit Design 19 2.2.3 The Technique of Multi-drive Inter-stack Coupling 22 2.2.4 Impedances of the Terminal Resistors 25 2.2.5 Stability Consideration 26 2.3 Simulation Results 28 2.4 Measurement Results 32 2.5 Summary 41 Chapter 3 A 250-GHz Body-Bias Controlled Oscillator in 65-nm CMOS technology 43 3.1 Introduction 43 3.1.1 Analysis of Oscillators [28] 43 3.1.2 Classification of Oscillators [30] 47 3.2 Analysis and Design of proposed VCO 54 3.2.1 The Variable Capacitor of the Varactor-Free Oscilator 54 3.2.2 The Parasitic Capacitor of Transistors 54 3.3 Simulation Results 59 3.4 Experimental Results 62 3.5 Summary 66 Chapter 4 Conclusion 68 REFERENCES 69 | |
| dc.language.iso | en | |
| dc.subject | 基板壓控振盪器 | zh_TW |
| dc.subject | 金氧半場效電晶體 | zh_TW |
| dc.subject | 分佈式放大器 | zh_TW |
| dc.subject | 多驅動級間耦合技術 | zh_TW |
| dc.subject | distributed amplifier | en |
| dc.subject | body bias voltage control oscillator | en |
| dc.subject | multi-drive inter-stack coupling | en |
| dc.subject | CMOS | en |
| dc.title | 毫米波分佈式放大器及基板壓控振盪器之研究 | zh_TW |
| dc.title | Research of Millimeter Wave Distributed Amplifier and Body-Bias Controlled Oscillator | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃天偉(Hsin-Tsai Liu),蔡政翰(Chih-Yang Tseng),林坤佑,蔡作敏 | |
| dc.subject.keyword | 金氧半場效電晶體,分佈式放大器,多驅動級間耦合技術,基板壓控振盪器, | zh_TW |
| dc.subject.keyword | CMOS,distributed amplifier,multi-drive inter-stack coupling,body bias voltage control oscillator, | en |
| dc.relation.page | 73 | |
| dc.identifier.doi | 10.6342/NTU202103016 | |
| dc.rights.note | 同意授權(限校園內公開) | |
| dc.date.accepted | 2021-09-07 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電信工程學研究所 | zh_TW |
| 顯示於系所單位： | 電信工程學研究所 | |
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| U0001-0609202116072900.pdf 授權僅限NTU校內IP使用（校園外請利用VPN校外連線服務） | 5.21 MB | Adobe PDF |
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