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請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80616
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dc.contributor.advisor吳肇欣(Chao-Hsin Wu)
dc.contributor.authorWei-Hao Linen
dc.contributor.author林緯昊zh_TW
dc.date.accessioned2022-11-24T03:10:51Z-
dc.date.available2021-11-03
dc.date.available2022-11-24T03:10:51Z-
dc.date.copyright2021-11-03
dc.date.issued2021
dc.date.submitted2021-10-27
dc.identifier.citation[1] D. Zhang et al., 'Consideration of datacenter optics for 400G and beyond,' in Asia Communications and Photonics Conference, 2019: Optical Society of America, p. T2D. 1. [2] 'Laser Concepts.' https://www.21semiconductors.com/innovation/laserconcepts/# (accessed. [3] C.-Y. Peng, K. Tsao, H.-T. Cheng, M. Feng, and C.-H. Wu, 'Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser,' Optics Express, vol. 28, no. 21, pp. 30748-30759, 2020. [4] C.-H. Cheng et al., '850/940-nm VCSEL for optical communication and 3D sensing,' Opto-Electronic Advances, vol. 1, no. 3, pp. 180005-1-180005-11, 2018. [5] B. Hogan. 'Operation of VCSELs Under Pulsed Conditions Increasing VCSEL Output Power.' (accessed. [6] D. Kim. '10µs pulse test solution for VCSELs a key component of modern LiDAR and 3D sensing systems.' (accessed. [7] W. Hamad et al., 'Modulation response, impedance, and equivalent circuit of ultra-high-speed multi-mode VCSELs,' in Semiconductor Lasers and Applications VIII, 2018, vol. 10812: International Society for Optics and Photonics, p. 1081203. [8] B. Razavi, Design of integrated circuits for optical communications. John Wiley Sons, 2012. [9] S. Galal and B. Razavi, '10-Gb/s limiting amplifier and laser/modulator driver in 0.18-μm CMOS technology,' IEEE Journal of Solid-State Circuits, vol. 38, no.12, pp. 2138-2146, 2003. [10] M. M. Khafaji, G. Belfiore, J. Pliva, R. Henker, and F. Ellinger, 'A $4\times45 $ Gb/s Two-Tap FFE VCSEL Driver in 14-nm FinFET CMOS Suitable for Burst Mode Operation,' IEEE Journal of Solid-State Circuits, vol. 53, no. 9, pp. 2686-2695, 2018. [11] P. J. Nahin, 'Among the giants: oliver heaviside: genius and curmudgeon: he called establishment mathematicianswoodenheaded′ when his powerful new methods perplexed them. his fellow ees didn't know what to make of him either,'IEEE spectrum, vol. 20, no. 7, pp. 63-69, 1983. [12] S. S. Mohan, M. D. M. Hershenson, S. P. Boyd, and T. H. Lee, 'Bandwidth extension in CMOS with optimized on-chip inductors,' IEEE Journal of SolidState Circuits, vol. 35, no. 3, pp. 346-355, 2000. [13] E. Sackinger and W. C. Fischer, 'A 3-GHz 32-dB CMOS limiting amplifier for SONET OC-48 receivers,' IEEE Journal of Solid-State Circuits, vol. 35, no. 12,pp. 1884-1888, 2000. [14] S.-E. Kim, S.-J. Song, S. M. Park, and H.-J. Yoo, 'CMOS optical receiver chipset for gigabit Ethernet applications,' in Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS'03., 2003, vol. 1: IEEE, pp. II. [15] B. Analui and A. Hajimiri, 'Bandwidth enhancement for transimpedance amplifiers,' IEEE Journal of Solid-State Circuits, vol. 39, no. 8, pp. 1263-1270,2004. [16] O. Kharraz and D. Forsyth, 'Performance comparisons between PIN and APD photodetectors for use in optical communication systems,' Optik, vol. 124, no. 13,pp. 1493-1498, 2013. [17] K. Park, W. Oh, B.-Y. Choi, J.-W. Han, and S. Park, 'A 4-channel 12.5 Gb/s common-gate transimpedance amplifier array for DVI/HDMI applications,' in 2007 IEEE International Symposium on Circuits and Systems, 2007: IEEE, pp.2192-2195. [18] H.-Y. Huang, J.-C. Chien, and L.-H. Lu, 'A 10-Gb/s inductorless CMOS limiting amplifier with third-order interleaving active feedback,' IEEE Journal of SolidState Circuits, vol. 42, no. 5, pp. 1111-1120, 2007. [19] K. Krishnamurthy, Ultra-broadband, efficient, microwave power amplifiers in gallium nitride HEMT technology. University of California, Santa Barbara, 2000. [20] R. C. Walker, K.-C. Hsieh, T. A. Knotts, and C.-S. Yen, 'A 10 Gb/s Si-bipolar TX/RX chipset for computer data transmission,' in 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition(Cat. No. 98CH36156), 1998: IEEE, pp. 302-303.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80616-
dc.description.abstract本論文以高功率與高速 VCSEL 作為主題,探討 VCSEL 在 3D 感測以及光纖通訊上的應用。 第一章介紹目前短距離高速 VCSEL 在資料中心的需求,以及高功率 VCSELArrays 在 3D 感測、LiDAR 等相關應用,顯示了 VCSEL 在光電領域上不可或缺的重要性。 第二章探討 VCSEL Arrays 為研究主題,以 2017 年蘋果(Apple)在 iPhone X 中使用 VCSEL 進行 3D 人臉識別為構思,設計有別於以往傳統規則陣列,提出以二進制為排列的想法,做分時與分區的陣列設計,並展現於不同時間投射出不同點圖之新穎性。接著介紹元件模擬結果、VCSEL 製程步驟以及元件的相關特性,包含直流特性、場型架設及特性,最後以脈衝寬度調變呈現了在不同脈衝寬度下,雷射明暗的特性,並展示 VCSEL Arrays 分區控制。 第三章探討光通訊發射端(TX)以及高速 VCSEL 為主題,說明相較傳統電傳輸光傳輸上的優勢。接續對 VCSEL 元件相關特性做介紹,並針對其特性做電路設計上的考量,同時,在元件端以更貼近於真實的模型來模擬。電路設計上,雷射二極體驅動器利用等化器技術來對時域上進行補償,使 VCSEL 有較良好的時域波形與眼圖,最後對 DC、AC、Transient 以及眼圖相關特性進行模擬。 第四章探討光通訊接收端(RX)為主題,針對前端類比積體電路作為設計,前半部分對 inductive peaking 技術做說明,此為寬頻通訊最常見的高速設計技巧;後半部分別對轉阻放大器與限幅放大器做介紹以及說明設計上考量,最後對電路進行DC、AC、Transient 以及眼圖等相關模擬。zh_TW
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Previous issue date: 2021
en
dc.description.tableofcontents"口試委員會審定書...........................................................................................................# 國立臺灣大學電機資訊學院電子工程學研究所 ...........................................................1 誌謝................................................................................................................................... i 中文摘要 ......................................................................................................................... iii ABSTRACT .................................................................................................................... iv CONTENTS .................................................................................................................... vi LIST OF FIGURES ......................................................................................................... ix LIST OF TABLES......................................................................................................... xiv Chapter 1 緒論............................................................................................................1 Chapter 2 940 nm VCSEL Arrays 應用於 3D 感測 ................................................3 2.1 前言 ................................................................................................................3 2.2 940 nm VCSEL 之磊晶與結構......................................................................4 2.2.1 VCSEL 介紹 .........................................................................................4 2.2.2 高功率 VCSEL 磊晶結構設計 ............................................................5 2.2.3 高功率 VCSEL 磊晶成長與材料分析 ................................................9 2.3 VCSEL Arrays 設計.....................................................................................11 2.4 VCSEL 製程步驟.........................................................................................13 2.5 VCSEL Arrays 直流特性.............................................................................17 2.5.1 直流量測架設.....................................................................................18 2.5.2 直流特性分析(DC Characteristic) .....................................................19 2.5.3 VCSEL 場型架設 ...............................................................................27 2.5.4 VCSEL 場型 .......................................................................................27 2.6 VCSEL 脈衝寬度調變(Pulse Width Modulation, PWM) ...........................29 2.7 結論 ..............................................................................................................32 Chapter 3 光發射端積體電路設計..........................................................................33 3.1 前言 ..............................................................................................................33 3.2 高速雷射二極體特性 ..................................................................................34 3.2.1 VCSEL 小訊號模型 ...........................................................................34 3.2.2 VCSEL 頻率響應 ...............................................................................36 3.2.3 雷射二極體非理想特性.....................................................................37 3.3 前饋式等化器(Feed Forward Equalizer, FFE) ............................................39 3.4 雷射二極體驅動器(Laser Diode Driver, LDD)...........................................41 3.4.1 前級驅動器(Pre-driver)......................................................................42 3.4.2 前饋式等化器(FFE) ...........................................................................42 3.4.3 輸出級(Output stage)..........................................................................44 3.4.4 VCSEL 等效模型 ...............................................................................44 3.5 雷射二極體驅動器串接 VCSEL 模擬結果................................................48 3.6 總結 ..............................................................................................................53 Chapter 4 光接收端積體電路設計..........................................................................54 4.1 前言 ..............................................................................................................54 4.2 擴增頻寬技術 ..............................................................................................55 4.2.1 電感峰值技術(Inductive Peaking) .....................................................55 4.3 光感測器 ......................................................................................................59 4.3.1 PIN 光電二極體 .................................................................................59 4.3.2 雪崩光電二極體.................................................................................59 4.4 轉阻放大器電路架構 ..................................................................................61 4.4.1 設計考量.............................................................................................62 4.4.2 共閘極轉阻放大器.............................................................................63 4.4.3 共閘極轉阻放大器雜訊分析.............................................................64 4.4.4 轉阻放大器模擬結果.........................................................................65 4.5 限幅放大器電路架構 ..................................................................................68 4.5.1 核心放大器電路.................................................................................72 4.5.2 直流偏移消除電路.............................................................................77 4.5.3 輸出級緩衝電路.................................................................................78 4.5.4 限幅放大器模擬結果.........................................................................81 4.6 總結 ..............................................................................................................84 Chapter 5 結論..........................................................................................................85 REFERENCE ..................................................................................................................86 APPENDIX .....................................................................................................................88"
dc.language.isozh-TW
dc.subject限幅放大器zh_TW
dc.subject垂直共振腔面射型雷射zh_TW
dc.subject垂直共振腔面射型雷射陣列zh_TW
dc.subject光通訊zh_TW
dc.subject雷射二極體驅動器zh_TW
dc.subject轉阻放大器zh_TW
dc.subjectOptical Communicationen
dc.subjectLimiting Amplifieren
dc.subjectTransimpedance Amplifieren
dc.subjectLaser Diode Driveren
dc.subjectVCSELen
dc.subjectVCSEL Arraysen
dc.title面射型雷射在3D感測與光收發電路之設計與應用zh_TW
dc.titleVCSELs for 3D Sensing and Optical Transceiver Integrated Circuit Design and Applicationen
dc.date.schoolyear109-2
dc.description.degree碩士
dc.contributor.oralexamcommittee劉深淵(Hsin-Tsai Liu),彭朋瑞(Chih-Yang Tseng),彭俊諺
dc.subject.keyword垂直共振腔面射型雷射,垂直共振腔面射型雷射陣列,光通訊,雷射二極體驅動器,轉阻放大器,限幅放大器,zh_TW
dc.subject.keywordVCSEL,VCSEL Arrays,Optical Communication,Laser Diode Driver,Transimpedance Amplifier,Limiting Amplifier,en
dc.relation.page90
dc.identifier.doi10.6342/NTU202104008
dc.rights.note同意授權(限校園內公開)
dc.date.accepted2021-10-28
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電子工程學研究所zh_TW
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