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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 藍崇文(Chung-Wen Lan) | |
| dc.contributor.author | Gavin Sison | en |
| dc.contributor.author | 徐凱文 | zh_TW |
| dc.date.accessioned | 2022-11-23T09:31:50Z | - |
| dc.date.available | 2021-08-04 | |
| dc.date.available | 2022-11-23T09:31:50Z | - |
| dc.date.copyright | 2021-08-04 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-07-22 | |
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The Ge−Si (Germanium-Silicon) system. Bulletin of Alloy Phase Diagrams, 5, 180-183. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/80207 | - |
| dc.description.abstract | 矽鍺合金一直以來在高溫應用中被視為最佳的熱電材料。熱電材料是藉溫度梯度產生電能(賽貝克效應)並以優越指數 (ZT值)做為評價特徵。優越指數與觀察之配件兩端電壓直接成正比，與熱導率間接成正比。在多晶系統中，聲子沿著晶界散射會降低整體熱導率，進而改善整體優越指數 。 該研究提出一種直接在碳化矽、氮化矽和氮化矽/矽粉觀察其晶體生長與成核行為的方法：均分別以 5 K/min、20 K/min和 100 K/min的冷卻速率生長成核。其中SiC 和 Si3N4:Si 過冷與溫度並無明顯相關性，平均值分別為 0.6 K 和 1.9 K；氮化矽在三組溫度條件下產生平均過冷溫度分別為3.0K、5.1K 和 7.0K。此外，長晶機制取決於冷卻速率、過冷度和基底材料。三種類型樹枝狀長晶可以透過 Péclet 數進行分類，其近乎和過冷成正比。在所有狀況中，橫向長晶以擴散運輸為主；而樹枝長晶則以對流運輸為主。吾人並發現碳化矽可以產生最多的晶粒且最少部分的偏析熔體；然而，氮化矽卻相反。因此吾人初步藉由 SEM、EDX 和 EBSD 來分析確認矽鍺合金生長行為。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-23T09:31:50Z (GMT). No. of bitstreams: 1 U0001-0806202100400200.pdf: 2776495 bytes, checksum: a1ea0deefe4e706dc902219f9ac65724 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | Certificate of Thesis/Dissertation Approval i Acknowledgements ii 摘要和关键词 iii Abstract Keywords iv Table of Contents v List of Figures vi List of Tables viii Chapter 1 – Introduction 01 1.1 – Silicon Germanium as a Thermoelectric Material 01 1.2 – Literature Review 03 1.3 – Purpose and Motivation 05 Chapter 2 – Experimental 06 2.1 – Experimental Setup 06 2.2 – Experimental Procedure 09 2.3 – Data Conversions 10 Chapter 3 – Infrared Temperature Analysis 14 Chapter 4 – In Situ Visualizations 18 Chapter 5 – Electron Microscope Analysis 34 Chapter 6 – Conclusions 40 References 43 Appendix 46 | |
| dc.language.iso | en | |
| dc.subject | 可視化 | zh_TW |
| dc.subject | 基底 | zh_TW |
| dc.subject | 晶體生長 | zh_TW |
| dc.subject | 矽鍺合金 | zh_TW |
| dc.subject | 原位 | zh_TW |
| dc.subject | 樹枝狀長晶 | zh_TW |
| dc.subject | 過冷 | zh_TW |
| dc.subject | Undercooling | en |
| dc.subject | Dendrite | en |
| dc.subject | Substrate | en |
| dc.subject | Visualization | en |
| dc.subject | Silicon germanium | en |
| dc.subject | Crystal Growth | en |
| dc.subject | In-situ | en |
| dc.title | 在用於熱電應用的 SiC、Si3N4 和 Si3N4:Si基底上生長的多晶 Si0.7Ge0.3 的成核和晶體生長行為 | zh_TW |
| dc.title | "Crystal Growth Behavior of Polycrystalline Si0.7Ge0.3 Grown on SiC, Si3N4, and Si3N4:Si Substrates for Thermoelectric Applications" | en |
| dc.date.schoolyear | 109-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 何國川(Hsin-Tsai Liu),王丞浩(Chih-Yang Tseng) | |
| dc.subject.keyword | 矽鍺合金,晶體生長,過冷,原位,可視化,基底,樹枝狀長晶, | zh_TW |
| dc.subject.keyword | Silicon germanium,Crystal Growth,Undercooling,In-situ,Visualization,Substrate,Dendrite, | en |
| dc.relation.page | 46 | |
| dc.identifier.doi | 10.6342/NTU202100969 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2021-07-22 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
| 顯示於系所單位： | 化學工程學系 | |
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