請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7946
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 李嗣涔 | |
dc.contributor.author | Yi-Teng Huang | en |
dc.contributor.author | 黃奕騰 | zh_TW |
dc.date.accessioned | 2021-05-19T17:59:49Z | - |
dc.date.available | 2021-07-26 | |
dc.date.available | 2021-05-19T17:59:49Z | - |
dc.date.copyright | 2016-07-26 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2016-07-15 | |
dc.identifier.citation | [1] Zhao J, Wang A, Green M, “24•5% Efficiency silicon PERT cells on MCZ substrates and 24•7% efficiency PERL cells on FZ substrates” Prog. Photovolt. 7471-474 (1999).
[2] Luque A, Ruiz J, Cuevas A, Agost M, “Double-sided solar cells to improve static concentration” Proc. 1st Euro. Conf. Photovoltaic Solar Energy Conversion, 269-277 (1977). [3] Green M, “Silicon Solar cells Advanced Principles and Practice”, Chap. 7, Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney (1995). [4] Tiedje T, Yablonovitch E, Cody G, Brooks B, “Limiting efficiency of silicon solar cells” ,IEEE Trans, Electron Devices 31, 711-716 (1984). [5] Waver P, Schmidt A, Wagemann H, Proc. 14th Euro, Conf, Photovoltaic Solar Energy Conversion , 2450-2453 (1997). [6] Green M, “Silicon solar cells: at the crossroads”, Prog. Photovolt. 8, 443-450 (2000). [7] Jianhua Zhao, “Recent advances of high-efficiency single crystalline silicon solar cells” ,Sol. Energy Mater. Sol. Cells, 82,53 (2004) [8] W. Fuhs, S. Gall, B. Rau, M. Schmidt, J. Schneider, “A novel route to a polycrystalline silicon thin-film solar cell” ,Solar Energy 77, 961 (2004). [9] B. Zimmermann, M. Glatthaar, M. Niggemann, M. Riede, A. Hinsch, “Electroabsorption studies of organic bulk-heterojunction solar cells” ,Thin Solid Films 493, 170-174 (2005) [10] Q.L. Song, F.Y. Li, H. Yang, H.R. Wu, X.Z. Wang, W. Zhou, J.M. Zhao ,X.M. Ding, C.H. Huang, X.Y. Hou,“Small-molecule organic solar cells with improved stability” ,Chemical Physics Lett. 416,42-46 (2005). [11] A.E. Becquerel, “Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques” ,C. R. Acad. Sci. 9, 145 (1839). [12] W.G. Adams and R.E. Day, “The Action of Light on Selenium” ,Proceedings of the Royal Society of London 25 (171-178), 113 (1876). [13] M. A. Green, “Third generation photovoltaics: solar cells for 2020 and beyond” , Physica E (Amsterdam) 14, 65, (2002). [14] Chapin D, Fuller C, Pearson G, “A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power” ,J. Appl. Phys. 25, 676, (1954). [15] W.E. Spear and P.G. LeComber, “Substitutional doping of amorphous silicon” ,Solid State Comm., 17,1193 (1975). [16] K. Wakisaka, M. Taguchi, T. Sawada, M. Tanaka, T. Matsuyama, T. Matsuoka, S. Tsuda, S. Nakano, Y. Kishi, and Y. Kuwano. “More than 16% solar cells with a new HIT (doped a-Si/nondoped a-Si/crystalline Si) structure” ,Proceedings of the 22nd IEEE Photovoltaic Specialists Conference (IEEE-PVSC-22), Las Vegas, USA (1991). [17] M. Tanaka, M. Taguchi, T. Matsuyama, T. Sawada, S. Tsuda, S. Nakano, H. Hanafusa, Y. Kuwano, “Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)” ,Jpn. J. Appl. Phys., 31 (1992), pp. 3518–3522 [18] Mishima, T., Taguchi, M., Sakata, H., & Maruyama, E.“Development status of high-efficiency HIT solar cells”,Sol. Energy Mater. Sol. Cells, 95, 18-21. (2011) [19] M. A. Green, “Solar Cells: Operating Principles, Technology, and System Applications” Prentice-Hall, New Jersey, (1982). [20] M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama, and O. Oota, “HITTM cells—high-efficiency crystalline Si cells with novel structure” ,Prog. Photovoltaics 8, 503, (2000). [21] P. Campbell, “Light trapping in textured solar cells” ,Sol. Energy Mater. Sol. Cells. 21, 165–172, (1990). [22] P. Campbell, “Enhancement of light absorption from randomizing and geometric textures” ,J. Opt. Soc.Am. B 10, 2410–2415, (1993) [23] P. Campbell, M.A. Green, “High performance light trapping textures for monocrystalline silicon solar cells”, Sol. Energy Mater. Sol. Cells 65, 369–375, (2001). [24] D.K. Schroder, “Semiconductor material and device characterization.” (Wiley-IEEE press, 2006). [25] G. Nakamura, K. Sato, H. Kondo, Y. Yudimoto. And K. Shirahato, Eur, Community Photovoltaic Sol, Energy Conf. 4th Stressa. Italy, p616. D. Reidil, Doredrect, Holland. (1982) [26] B. Akaoglu, K. Sel, I. Atilgan, and B. Katircioglu, “Carbon content influence on the optical constants of hydrogenated amorphous silicon carbon alloys”, Opt. Mater. 30, 1257 (2008) [27] VeronikaVavrunkova , Jarmila Mu llerova , Rudolf Srnanek , Pavol Sutta, “Structural changes studies of a-Si:H films deposited by PECVD under different hydrogen dilutions using various experimental techniques”, Vacuum 84, 123–125 (2010) [28] J. Tauc, R. Grigorovici, A. Vancu, “Optical Properties and Electronic Structure of Amorphous Germanium”, Phys. Stat. Sol. 15, 627, (1966). [29] L. Korte,E.Conrad, H.Angermann, R.Stangl, M.Schmidt, “Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization”, Sol. Energy Mater. Sol. Cells 93, 905–910, (2009). [30] T. C. Chiou, and S. C. Lee, “a-Si:H/c-Si Heterojunction Solar Cells”, Graduate Institute of Electronics EngineeringCollege of Electrical Engineering and Computer Science, National Taiwan University, Master Thesis [31] Toru Sawada, Norihiro Terada, Sadaji Tsuge, Toshiaki Baba, Tsuyoshi Takahama, KenichiroWakisaka, Shinya Tsuda and Shoichi Nakano, ”HIGJ-EFFICIENCY a-Si/c-Si HETEROJUNCTION SOLAR CELL”, Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference-1994, 1994 IEEE First World Conference on. Vol. 2. IEEE, 1994. [32] M.R. Page, E. Iwaniczko, Y. Xu, Q. Wang, Y. Yan, L. Roybal, Howard M. Branz, and T.H.Wang, ”Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells”, Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on. Vol. 2. IEEE, (2006). [33] SeungJikLee, SeHwanKim, DaeWonKim, KiHyungKim, BeomKyuKim, JinJang “Effect of hydrogen plasma passivation on performance of HIT solar cells”, Solar Energy Materials & Solar Cells 95 (2011) 81–83 [34] A. Descoeudres, L. Barraud, Stefaan De Wolf, B. Strahm, D. Lachenal, C. Gue´ rin,Z. C. Holman, F. Zicarelli, B. Demaurex, J. Seif,J. Holovsky, and C. Ballif Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment Appl. Phys. Lett. 99, 123506 (2011) [35] Fengyou Wang, Xiaodan Zhang, Liguo Wang, Yanjian Jiang, Changchun Wei, Jian Sun, and Ying Zhao, “Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications”, ACS Publications,(2014). [36] M.R. Page, E. Iwaniczko, Y. Xu, Q. Wang, Y. Yan, L. Roybal, Howard M. Branz, and T.H.Wang, “Well Passivated a-Si:H Back Contacts for Double-Heterojunction Silicon Solar Cells”, Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on. Vol. 2. IEEE, (2006). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7946 | - |
dc.description.abstract | 在非晶矽/單晶矽異質接面的太陽能電池中,元件特性與異質接面的品質和抗反射結構是強烈相關的。首先,本論文藉由提高非晶矽之成長溫度來改善薄膜的特性進而提升介面的品質,其中,利用高溫成長之本質非晶矽層作為保護層,元件的開路電壓因此獲得明顯的提升;同時,也使用一種介面處理方法來改善介面的品質,在本論文該方法稱之為電漿處理,是使用電漿增強化學氣相沉積方法在實際成長非晶矽薄膜之前,先以氫氣之低能量電漿對單晶矽基板表面作預處理。由於介面的良好鈍化和內建電位的增加,使用氫氣電漿處理方法可以有效提升元件之開路電壓和填充因子,進而增加太陽能電池的轉換效率。接著,本論文使用抗反射結構來改善元件特性。利用化學濕蝕刻方法製造的微結構基板,可顯著減少基板的反射率,利用此有效的抗反射結構,元件之光電流可以有顯著的提升,進而提升轉換效率。最後,將電漿處理及背表面電場應用在此結構上,元件效率可達16.38 %。 | zh_TW |
dc.description.abstract | In a-Si:H/c-Si heterojunction solar cells, the key factor to the high performance are the a-Si:H/c-Si heterointerface and anti-reflection structure. First, we use the high temperature (250 ℃) to deposit a-Si:H layers to improve the interface passivation due to the films quality is better. By inserting high temperature deposition of intrinsic a-Si:H to be the passivation layer, the open circuit voltage (Voc) is apparently increased. Moreover, we concentrate on the interface treatment of the a-Si:H/c-Si interface. Before depositing the a-Si:H films by PECVD, we use the hydrogen treatment to pre-treat the c-Si surface by a low energy plasma. The hydrogen plasma treatment improve both the open circuit voltage (Voc) and fill factor (F.F.) and thereby increase the conversion efficiency of solar cell due to the good passivation of interface and the increase of build-in potential. Second, the anti-reflection structure is introduced to improve the device performance. We use textured substrate formed by wet chemical etching method. By means of this structure, the short circuit current density (Jsc) can be largely enhanced and the efficiency is improved. Finally, the plasma treatment and BSF structure are used in this textured substrate of HIT solar cell. The conversion efficiency is achieved to 16.38%. | en |
dc.description.provenance | Made available in DSpace on 2021-05-19T17:59:49Z (GMT). No. of bitstreams: 1 ntu-105-R03943105-1.pdf: 9631982 bytes, checksum: 10f0e259a4df920442f7e1bdd3a392aa (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | Chapter 1 Introduction…………………………………………………1
1.1 Solar Energy…………………………………………………………...1 1.2 Brief History of Photovoltaic Devices……………………....1 1.3 HIT Solar Cells…………………………………………………….....3 1.4 Motivation of the Research……………………………………...4 1.5 Outlines of the Thesis……………………………………………....7 Chapter 2 Experiments…………………………………………………8 2.1 Fabrication equipments…………………………………………..8 2.1.1 Deposition System PECVD………………………………….............8 2.1.2 Sputter and Resistive thermal evaporation……………………......13 2.2 Substrate Preparation……………………………………............14 2.3 Deposition Procedures – PECVD……………………............14 2.4 Measurement Techniques……………………………………….16 2.4.1 Film Thickness………………………………………………………16 2.4.2 Surface characterization…………………………………………….17 2.4.3 Transmittance and Reflectance……………………………………..17 2.4.4 Current – Voltage Characteristics………………………………….19 2.4.5 Spectral Response……………………………………………...........19 2.4.6 Introduction of FTIR………………………………………………..21 Chapter 3 Properties of Hydrogenated Amorphous Silicon and HIT Solar Cells with Flat structure ………..24 3.1 Experiments………………………………………………………….24 3.2 Results and Discussion…………………………………………..27 3.2.1 Structure Properties of a-Si:H……………………………………..27 3.2.2 Optical Properties of a-Si:H ………………………………………..30 3.2.3 Electrical Properties of a Si:H……………………………………...31 3.2.4 HIT Solar Cells without Buffer layer……………………………...35 3.2.4.1 The Fabrication of HIT Solar Cells without Buffer intrinsic Layer…………………………………………………………………..35 3.2.4.2 Current-Voltage Characteristics……………………………….37 3.2.5 HIT Solar Cells with Buffer i Layer……………………………….47 3.2.5.1 The Fabrication Processes of HIT Solar Cells with Buffer i Layer…………………………………………………………………..48 3.2.5.2 The I-V Characteristics of HIT Solar Cells with Buffer i Layer…………………………………………………………………..49 3.2.6 HIT Solar cells with BSF Structure ………………………………..55 3.2.6.1 The Fabrication Processes of HIT Solar cells with BSF Structure ………………………………………………………………55 3.2.6.2 The characteristics of HIT Solar Cells with BSF Structure….............................................................................................56 Chapter 4 The effect of plasma treatment and anti-reflection coating on the performance of HIT Solar Cells……………………………………………………………………………….62 4.1 The Effect of Plasma Treatment on HIT Solar cells...63 4.1.1 Experiments…………………………………………………………63 4.1.2 Results and Discussion……………………………………………...64 4.2 HIT Solar Cells on Textured Substrate…………………..70 4.2.1 The Fundamentals of Anti-reflection coating..................................70 4.2.2 Fabrication of Texture Substrate ………………………………..70 4.2.3 Surface morphologies of Textured Substrate……………………...70 4.2.4 Optical Properties of Textured Substrate………………………….73 4.2.5 HIT Solar Cells on Textured Structure……………………………74 4.2.5.1 The Fabrication Processes of HIT Solar cells with no Buffer I Layer on Textured structure……………………………………………74 4.2.5.2 The I-V Characteristics of HIT Solar Cells with no Buffer I Layer on Textured structure…………………………………………………...75 4.2.5.3 The Fabrication Processes of HIT Solar cells with Buffer I Layer on Textured structure…………………………………………………...83 4.2.5.4 The I-V Characteristics of HIT Solar Cells with Buffer I Layer on Textured structure………………………………………………………84 4.3 The Plasma Treatment on textured HIT Solar cells with Buffer I Layer…………………………………………………....89 4.3.1 Experiments…………………………………………………………89 4.3.2 Results and Discussion……………………………………………...90 4.4 The Improvement of textured HIT Solar cells by using BSF Structure…………………………………………………..94 4.4.1 The Fabrication Processes of textured HIT Solar cells with BSF Structure…………………………………………………………………...94 4.4.2 The Characteristics of textured HIT Solar cells with BSF Structure…………………………………………………………………...95 Chapter 5 Conclusions………………………………………………..101 References……………………………………………………………………103 | |
dc.language.iso | en | |
dc.title | 透過高溫成長改善非晶矽/單晶矽異質接面太陽能電池特性影響之研究 | zh_TW |
dc.title | Improvement of a-Si:H/c-Si Heterojunction Solar Cells through higher deposition temperature | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 蔡熊光,林清富,陳奕君 | |
dc.subject.keyword | 異質接面太陽能電池,非晶矽,抗反射基板, | zh_TW |
dc.subject.keyword | HIT solar cell,amorphous silicon,textured structure, | en |
dc.relation.page | 107 | |
dc.identifier.doi | 10.6342/NTU201600922 | |
dc.rights.note | 同意授權(全球公開) | |
dc.date.accepted | 2016-07-15 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-105-1.pdf | 9.41 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。