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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳文章(Wen-Chang Chen) | |
| dc.contributor.author | Li-Che Hsu | en |
| dc.contributor.author | 徐立哲 | zh_TW |
| dc.contributor.author | f04549031 | |
| dc.date.accessioned | 2022-11-23T08:57:47Z | - |
| dc.date.available | 2022-10-31 | |
| dc.date.available | 2022-11-23T08:57:47Z | - |
| dc.date.copyright | 2021-11-08 | |
| dc.date.issued | 2021 | |
| dc.date.submitted | 2021-10-06 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79305 | - |
| dc.description.abstract | " 可拉伸高分子材料由於具備無機材料所欠缺的結構延展性，及可調控之電氣性質，近年來被廣泛應用於開發軟性及穿戴式電子元件。本論文的第一部分(章節一至章節四)介紹可拉伸型聚醯亞胺之高分子結構設計。聚醯亞胺由於其高熱穩定性及溶劑可加工性，被廣泛應用於有機電子元件之基材、介電層與記憶體層。然而，先前研究所報導的聚醯亞胺元件皆僅具備可撓曲性質，至今尚未被拓展至可拉伸元件。第二章介紹可拉伸之聚矽氧烷-醯亞胺高分子。市售的二酸酐單體及具備不同長度矽氧烷軟鏈段之二胺被用於合成一系列之聚(矽氧烷-醯亞胺)高分子。其中，ODPA–A12 聚(矽氧烷-醯亞胺)受益於4,4’-氧雙鄰苯二甲酸酐之柔軟結構以及較短的矽氧烷軟鏈段，展現良好之機械性質例如32.8% 之斷裂伸長量及1.60 MPa之楊氏模數，同時具備良好之溶劑可加工性。因此，該高分子薄膜被應用於製作可拉伸且非揮發性之阻抗型記憶體之記憶體層。延續前一章的結構設計，第三章引入具有三官能基的1,3,5-三(4-氨基苯氧基)苯作為交聯劑，形成聚(矽氧烷-醯亞胺)網狀高分子。藉由調控網狀結構之交聯度，聚矽氧烷-醯亞胺材料可達到超過400%之斷裂伸長量、13.29 MJ M-3之韌性和極佳的形變回復力，且同時具備高於200 °C之軟化溫度。該彈性體作為基材及薄膜皆展現良好耐拉性，展現其極高潛力應用於可拉伸元件。此高分子成功與導電高分子結合，開發出高達100%可拉伸且溶劑可加工之阻抗式記憶體及有機場效電晶體。此部分研究展現高分子結構設計可優化聚矽氧烷-醯亞胺之機械性質，並成功將該材料應用於溶劑可加工且高拉伸性之高分子元件。 本論文的第二部分(章節五至章節八)介紹引入生物來源軟鏈段所合成之嵌段型共軛高分子。生物來源之聚丁位癸内酯軟鏈段與典型的共軛高分子結合形成嵌段型高分子，以提升半導體材料之生質含量及可拉伸性。第六章介紹利用聚丁位癸内酯及聚3-己基噻吩合成之軟–硬–軟三嵌段高分子應用於有機場效電晶體之半導體層。三嵌段結構確保聚3-己基噻吩主鏈之堆疊形成電荷傳輸通道，而分支狀軟鏈段成功調控高分子的結晶度以及相分離，形成高電洞遷移率(4.5×10-2 –8.9×10-2 cm2 V-1 S-1)及高拉伸性的半導體高分子材料。其中，B3AB3型高分子(A：聚3-己基噻吩、B：聚丁位癸内酯)具備最優異之拉伸性，在被拉伸至100%時仍可維持72–75%之電洞遷移率，並可通過500次50%之循環拉伸測試。第七章介紹利用聚丁位癸内酯及聚9,9-雙己基茀合成之雙嵌段共軛高分子，此類高分子被用於電晶體式記憶體之電荷儲存層。受益於聚丁位癸内酯之軟鏈段，AB、AB2及AB3型高分子(A：聚9,9-雙己基茀、B：聚丁位癸内酯)之薄膜皆可承受100% 之應變而不產生裂痕。此外，利用電腦軟體分析原子力顯微鏡相圖，可量化計算聚茀結晶於高分子薄膜之覆蓋面積，並建立電荷儲存密度–薄膜表面型態之關聯性。隨著軟鏈段的分支數增加，高分子形成更高密度的聚茀結晶，達到優化之記憶體元件表現。AB3型高分子具備最佳的記憶體表現(memory window = 108V)，且可承受100%之拉伸並通過500次50%之循環拉伸測試。此部分研究成功將生物來源脂肪族聚酯與共軛高分子結合生成高生質含量之軟性半導體材料，並展現嵌段高分子之構型設計可優化其機械及電氣性質。 " | zh_TW |
| dc.description.provenance | Made available in DSpace on 2022-11-23T08:57:47Z (GMT). No. of bitstreams: 1 U0001-0510202122191300.pdf: 16919899 bytes, checksum: 8f1107cdd31317040ca60224ac685b23 (MD5) Previous issue date: 2021 | en |
| dc.description.tableofcontents | "誌謝 i 中文摘要 iii ABSTRACT v CONTENTS viii LIST OF TABLES xiii LIST OF FIGURES xv PART ONE: 可拉伸之聚矽氧烷-醯亞胺高分子合成及其於軟性電子元件之應用 Development of Stretchable Poly(siloxane-imide)s and Their Applications in Soft Electronic Devices 1 Chapter 1 Introduction 2 1.1 Best-Seller in Polymer Electronics: Polyimide materials 2 1.1.1 Syntheses of PI 3 1.1.2 Structure–Property Relationships of PI 6 1.2 PI-Based Electronic Devices 11 1.2.1 Introduction to Organic Transistors and Memory devices 12 1.2.2 PI as Dielectrics 19 1.2.3 PI as Memory Elements 20 1.2.4 PI as Substrates and Stretchable Device Arrays 22 1.3 Research Objectives 23 1.4 Tables and Figures 26 Chapter 2 Intrinsically Stretchable and Solution-processable Poly(siloxane-imide)s for Stretchable Resistive Memory Applications 33 2.1 Background 33 2.2 Experimental Section 36 2.2.1 Materials 36 2.2.2 Polymer Synthesis 37 2.2.3 Characterization 38 2.3 Results and Discussion 41 2.3.1 Polymer Characterization 41 2.3.2 Thermal, Optical, Electrochemical Properties and Memory Behavior 42 2.3.3 Mechanical Properties 45 2.3.4 Stretchable Resistive Memory Applications 47 2.4 Summary 50 2.5 Tables and Figures 51 Chapter 3 Mechanically Tough and Elastomeric Poly(siloxane-imide) Networks for Stretchable Electronic Applications 64 3.1 Background 64 3.2 Experimental Section 67 3.2.1 Materials 67 3.2.2 Polymer Synthesis 68 3.2.3 Characterization 71 3.3 Results and Discussion 75 3.3.1 Polymer Characterization 75 3.3.2 Molecular Packing, Thermal and Mechanical Properties 78 3.3.3 Mechanical Strength and Hysteresis 81 3.3.4 Stretchable PEDOT:PSS/LiTFSI conductor on PSIs 83 3.3.5 PSI as active layers 85 3.3.6 Stretchable resistive memory 86 3.3.7 Stretchable OFET 88 3.4 Summary 91 3.5 Tables and Figures 93 Chapter 4 Conclusion and Perspectives 116 4.1 Conclusion 116 4.2 Future Work 117 REFERENCE 119 PART TWO: 具有生物來源軟鏈段之嵌段共軛高分子合成及其於電子元件之應用 Synthesis of Bio-based Block Copolymers with Conjugated Segments and Their Applications in Electronic Devices 126 Chapter 5 Introduction 127 5.1 Stretchable Polymer Semiconductors: Design, Synthesis and Applications 127 5.1.1 Design and Synthesis 128 5.1.2 Applications 133 5.2 Introduction to Bio-Based Polymers 137 5.2.1 Bio-Based Polymers for Optoelectronic Devices 137 5.2.2 Bio-Based and Biocompatible Polyesters 140 5.2.3 Poly(δ-decanolactone) (PDL): A Bio-Based and Soft Polyester 141 5.3 Research Objectives 143 5.4 Tables and Figures 147 Chapter 6 Poly(3-hexylthiophene)-block-poly(δ-decanolactone)s: Toward High-Performance and Stretchable Semiconducting Material Through Branched Soft–hard–soft Type Triblock Copolymer Design 154 6.1 Background 154 6.2 Experimental Section 157 6.2.1 Materials 157 6.2.2 Polymer Synthesis 158 6.2.3 Characterization 168 6.3 Results and Discussion 172 6.3.1 Polymer Characterization 172 6.3.2 Thermal Properties 174 6.3.3 Selective Solvent Process Versus Optical and Electrochemical Properties 177 6.3.4 Thin-film Morphology, Phase Separation and Crystallinity 182 6.3.5 Charge mobility and Mechanical Properties 187 6.3.6 Stretchable OFET Applications 192 6.4 Summary 196 6.5 Tables and Figures 198 Chapter 7 Poly(9,9-di-n-hexyl-2,7-fluorene)-block-poly(δ-decanolactone)s: Effect of Soft Segment Branching on Electronic Properties of Stretchable Polymer Electret 229 7.1 Background 229 7.2 Experimental Section 232 7.2.1 Materials 232 7.2.2 Polymer Synthesis 233 7.2.3 Characterization 236 7.3 Results and Discussion 240 7.3.1 Polymer Characterization 240 7.3.2 Thermal Properties 242 7.3.3 Optical and Electrochemical Properties 245 7.3.4 Thin-film Morphology and Analysis of Crystalline Polyfluorene Domain 246 7.3.5 Charge Trapping Properties of the Polymer Electrets 250 7.3.6 Stretchable OFET Memory Applications 255 7.4 Summary 257 7.5 Tables and Figures 258 Chapter 8 Conclusion and Perspectives 276 8.1 Conclusion 276 8.2 Future Work 279 8.3 Tables and Figures 282 REFERENCE 283 AUTOBIOGRAPHY I PUBLICATION LIST II" | |
| dc.language.iso | en | |
| dc.title | (I) 可拉伸之聚矽氧烷-醯亞胺高分子合成及其於軟性電子元件之應用 (II) 具有生物來源軟鏈段之嵌段共軛高分子合成及其於電子元件之應用 | zh_TW |
| dc.title | (I) Development of Stretchable Poly(siloxane-imide)s and Their Applications in Soft Electronic Devices (II) Synthesis of Bio-based Block Copolymers with Conjugated Segments and Their Applications in Electronic Devices | en |
| dc.date.schoolyear | 110-1 | |
| dc.description.degree | 博士 | |
| dc.contributor.coadvisor | 佐藤敏文(Toshifumi Satoh) | |
| dc.contributor.oralexamcommittee | 鄭如忠(Hsin-Tsai Liu),童世煌(Chih-Yang Tseng),郭霽慶,劉振良,邱昱誠 | |
| dc.subject.keyword | 拉伸電子元件,聚(矽氧烷-醯亞胺),聚丁位癸内酯,嵌段共軛高分子,有機場效電晶體,記憶體, | zh_TW |
| dc.subject.keyword | stretchable electronics,poly(siloxane-imide)s,poly(δ-decanolactone),conjugated block copolymers,organic field-effect transistor,memory device, | en |
| dc.relation.page | 294 | |
| dc.identifier.doi | 10.6342/NTU202103564 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2021-10-07 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 高分子科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 高分子科學與工程學研究所 | |
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