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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管傑雄 | |
| dc.contributor.author | Song-Po Chao | en |
| dc.contributor.author | 趙崧博 | zh_TW |
| dc.date.accessioned | 2021-07-11T15:38:54Z | - |
| dc.date.available | 2023-08-23 | |
| dc.date.copyright | 2018-08-23 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-08-13 | |
| dc.identifier.citation | (1) Byrnes, J. (Ed.). (2008). Unexploded ordnance detection and mitigation. Springer Science & Business Media.
(2) Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D. A., Zhang, Y., Dubonos, S. V., ... & Firsov, A. A. (2004). Electric field effect in atomically thin carbon films. science, 306(5696), 666-669. (3) Choi, K. K. (1997). The physics of quantum well infrared photodetectors (Vol. 7). World Scientific. (4) Pan, D., Towe, E., & Kennerly, S. (1998). Normal-incidence intersubband (In, Ga) As/GaAs quantum dot infrared photodetectors. Applied Physics Letters, 73(14), 1937-1939. (5) Levine, B. F. (1993). Quantum‐well infrared photodetectors. Journal of applied physics, 74(8), R1-R81. (6) Moon, J., Li, S. S., & Lee, J. H. (2003). A high performance quantum well infrared photodetector using superlattice-coupled quantum wells for long wavelength infrared detection. Infrared Physics and Technology, 44(4), 229–234. (7) Chen, C. C., Chen, H. C., Hsu, M. C., Hsieh, W. H., Kuan, C. H., Wang, S. Y., &Lee, C. P. (2002). Performance and application of a superlattice infrared photodetector with a blocking barrier. Journal of Applied Physics, 91(3), 943–948. (8) Lin, S. H., Feng, D. J. Y., Lee, M. L., Lay, T. S., Sun, T. P., & Kuan, C. H. (2012).Double-barrier superlattice infrared photodetector integrated with multiple quantum-well infrared photodetector to improve performance. International Journal of Electrochemical Science, 7(7), 5746–5753. (9) Liu, H. C., Wasilewski, Z. R., Buchanan, M., & Chu, H. (1993). Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors. Applied physics letters, 63(6), 761-763. (10) Gunapala, S. D., & Bandara, K. M. S. V. (1995). Recent Developments in Quantum-Well Infrared. Advances in Research and Development: Homojunction and Quantum-Well Infrared Detectors, 21, 113. (11) Li, S. S. (1997). Recent progress in quantum well infrared photodetectors and focal plane arrays for IR imaging applications. Materials chemistry and physics, 50(3), 188-194. (12) Jay, F., & Goetz, J. A. (1988). IEEE standard dictionary of electrical and electronics terms. Institute of Electrical and Electronics Engineers. (13) Hasnain, G., Levine, B. F., Bethea, C. G., Logan, R. A., Walker, J., & Malik, R. J. (1989). GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings. Applied Physics Letters, 54(25), 2515-2517. (14) Lee, M.-L., Hsieh, C.-J., You, Y.-H., Su, V.-C., Chen, P.-H., Lin, H.-C., ... Kuan, C.-H. (2013). Performance enhancement in Quantum Well Infrared Photodetector utilizing the Grating Structure. Cleo: 2013, CM3F.7. (15) Dupont, E. (2000). Optimization of lamellar gratings for quantum-well infrared photodetectors. Journal of Applied Physics, 88(5), 2687-2692. (16) Meguro, T., Hamagaki, M., Modaressi, S., Hara, T., Aoyagi, Y., Ishii, M., & Yamamoto, Y. (1990). Digital etching of GaAs: New approach of dry etching to atomic ordered processing. Applied physics letters, 56(16), 1552-1554. (17) atsukura, Y., Tanaka, H., & Wada, J. (2000). Selectivity enhancement of GaAs/AlGaAs dry etching by a pulse-excited inductively coupled plasma source. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 18(2), 864-867. (18) Agarwala, S., Horst, S. C., King, O., Wilson, R., Stone, D., Dagenais, M., & Chen, Y. J. (1998). High-density inductively coupled plasma etching of GaAs/AlGaAs in BCl 3/Cl 2/Ar: A study using a mixture design experiment. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 16(2), 511-514. (19) Awan, K. M., Sanatinia, R., & Anand, S. (2014). Nanostructuring of GaAs with tailored topologies using colloidal lithography and dry etching. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 32(2), 021801. (20) Li, X., Chen, W., Zhang, S., Wu, Z., Wang, P., Xu, Z., ... & Lin, S. (2015). 18.5% efficient graphene/GaAs van der Waals heterostructure solar cell. Nano Energy, 16, 310-319. (21) Sensale-Rodriguez, B., Yan, R., Kelly, M. M., Fang, T., Tahy, K., Hwang, W. S., ... & Xing, H. G. (2012). Broadband graphene terahertz modulators enabled by intraband transitions. Nature communications, 3, 780. (22) Liu, C. H., Chang, Y. C., Norris, T. B., & Zhong, Z. (2014). Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nature nanotechnology, 9(4), 273-278. (23) Xia, S. X., Zhai, X., Huang, Y., Liu, J. Q., Wang, L. L., & Wen, S. C. (2017). Multi-band perfect plasmonic absorptions using rectangular graphene gratings. Optics letters, 42(15), 3052-3055. (24) Lin, S. H., Wang, Y. H., Chang, C. W., Lu, J. H., Chen, C. C., & Kuan, C. H. (2010). Development of superlattice infrared photodetectors. In Cutting Edge Nanotechnology. InTech. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/79040 | - |
| dc.description.abstract | 紅外線偵測器舉凡在軍事夜視系統、醫學醫療儀器、通訊系統、天文觀測，扮演重要的角色。本論文結合量子井及超晶格，透過光柵結構與二維材料來提升量子井紅外線的吸收率。
光柵結構可以使光場在元件主動區內有效集中。我們利用本實驗室研發的模擬方法，針對特定的波段進行設計，找出效率最佳化的光柵結構。對於室溫的特徵波長(波長為9.5微米)而言，光柵在週期是4.5微米、深度為3微米和佔空比40%，能使元件有最有效的增益。此光柵的響應度與沒有光柵結構的元件相比，有5.5倍的增益，偵測度可以提高25倍，且最高可以操作在96K的環境下。 石墨烯能提升光電子的產生。放置石墨烯在光柵表面後，比較於未經處理的元件，響應度有8倍的增益，且偵測度可以提高70倍，石墨烯明顯增益感測器的元件表現。 | zh_TW |
| dc.description.abstract | The infrared detectors play an important role in the military night vision system, medical instruments, communication systems and astronomical observations. This paper combines the quantum well and the superlattice, through the grating structure and two-dimensional materials to enhance the infrared absorption of quantum wells.
The grating structure can effectively focus the light field in the component active region. We use the simulation method developed by our laboratory to design a specific, to find the grating structure with efficiency optimization. For the characteristic wavelength at room temperature (9.5 microns), the grating is 4.5 microns in duration, 3 microns in depth and a duty ratio of 40%, which gives the component the most effective gain. The response of this grating is 5.5 times compare with the gain of the component without the grating structure, the detection degree can be increased 25 times and the maximum can operate in 96K environment. Graphene can enhance the production of photoelectron. After placing the graphene on the grating surface, compared to the untreated components, the response has a gain of 8 times, and the detection degree can be increased by 70 times, the graphene is obviously gain the component performance of the sensor. | en |
| dc.description.provenance | Made available in DSpace on 2021-07-11T15:38:54Z (GMT). No. of bitstreams: 1 ntu-107-R05941013-1.pdf: 3284453 bytes, checksum: 7ccac84b617c866e79f915db925b9b82 (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 口試委員會審定書 I
摘要 II Abstract IIII 致謝 IV 目錄 V 圖目錄 VII 表目錄 IX 第一章 緒論 1 1.1 動機 1 1.2 紅外線輻射 1 1.3 石墨烯 2 第二章 文獻參考 3 2.1 理想量子系統 3 2.2 黑體輻射 (Black Body radiation ) 4 2.3 量子井 (Quantum Well) 6 2.4 超晶格 (Superlattice) 9 2.5 量子井與超晶格多層結構 (Quantum Well & Superlattice ) 11 2.6 漸逝波 (Evanscent wave) 12 2.7 光柵結構之目的與改善 13 2.8 光柵結構之模擬 15 2.9 蝕刻基礎 20 第三章 元件製程與量測系統 22 3.1 反應式耦合電漿蝕刻(Inductively Coupled Plasma) 22 3.1.1 反應式耦合電漿蝕刻之參數測量 23 3.2 電子束微影系統 (E-beam Lithograph) 26 3.3 增強電漿化學氣相沉積法 (PECVD) 27 3.4 元件製程 28 3.5 量測儀器系統 40 3.5.1 打線機 40 3.5.2 暗電流量測 40 3.5.3 傅利葉轉換紅外線光譜儀 (Fourier Transform Infrared Spectrometer, FTIR ) 41 3.5.4 相對響應 42 3.5.5 黑體輻射光電流量測 43 第四章 實驗結果與討論 45 4.1 ICP-RIE蝕刻結果 45 4.2 石墨烯轉移結果 47 4.3 FTIR光譜 50 4.4 暗電流量測結果 54 4.5 光電流量測結果 55 4.6 絕對響應 58 4.7 偵測效率 59 4.8 變溫實驗 60 第五章 結論與未來展望 63 第六章 參考資料 64 | |
| dc.language.iso | zh-TW | |
| dc.subject | 光柵結構 | zh_TW |
| dc.subject | 超晶格紅外線光偵測器 | zh_TW |
| dc.subject | 量子井紅外線光偵測器 | zh_TW |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | grating structure | en |
| dc.subject | Evanescent wave | en |
| dc.subject | Quantum Well infrared photodetector | en |
| dc.subject | Superlattice infrared photodetector | en |
| dc.subject | Graphene | en |
| dc.title | 最佳化光柵結構與二維材料增益多彩量子井與超晶格感測器之探討 | zh_TW |
| dc.title | Multicolor Quantum Well and Superlattice Infrared Photodetector Optimized by Simulated Grating Structure and Two Dimension Material | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 孫建文,藍彥文,孫允武,蘇文生 | |
| dc.subject.keyword | 石墨烯,光柵結構,量子井紅外線光偵測器,超晶格紅外線光偵測器, | zh_TW |
| dc.subject.keyword | Evanescent wave,grating structure,Quantum Well infrared photodetector,Superlattice infrared photodetector,Graphene, | en |
| dc.relation.page | 66 | |
| dc.identifier.doi | 10.6342/NTU201803243 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-08-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2023-08-23 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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