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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78935完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 蘇國棟(Guo-Dung J. Su) | |
| dc.contributor.author | Sheng-Hui Li | en |
| dc.contributor.author | 李聖暉 | zh_TW |
| dc.date.accessioned | 2021-07-11T15:30:27Z | - |
| dc.date.available | 2023-08-21 | |
| dc.date.copyright | 2018-08-21 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-08-17 | |
| dc.identifier.citation | Reference
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78935 | - |
| dc.description.abstract | 本論文主旨為改善氮化鎵微型發光二極體 (micro-LED) 之效能，並成功研製100x100陣列數藍光micro-LED，每顆像素大小為10微米，像素中心至中心距離為12.8微米。未來期望能結合主動式驅動背板，應用於微顯示器 (micro-display) 如AR/VR眼鏡。
在成熟微形發光二極體製程中常利用覆晶封裝 (flip-chip bonding) 結合控制電路，改善藍寶石基板的低導熱與導電特性，然而覆晶封裝之micro-LED結構是從藍寶石基板(Sapphire)面出光，而GaN (n=2.4) 相對Sapphire (n=1.77) 有較高之折射率，光在傳播途徑將折射並發散，造成pixel間嚴重光互擾，因此當微型發光二極體用於顯示用途時，Sapphire勢必得移除或磨薄至一定厚度。本論文提出以雷射剝離技術 (Laser lift-off，LLO)解決光互擾問題，利用覆晶封裝搭配LLO製程去除藍寶石基板，並填入底部填充劑減少LLO造成之缺陷。 | zh_TW |
| dc.description.abstract | In this thesis, the major goal is to improve the characteristics of mature GaN-based micro-light-emitting diodes (μLEDs). The blue light μLEDs were successfully fabricated with the dimensions of each pixel is 10 μm, the pitch of micro-LED array is 12.8 μm, and the number of an array is 100 x 100. By integrating with active-matrix backplane, advanced applications in micro-display, such as augmented reality (AR) and virtual reality (VR) glasses can be realized through micro-LED in the near future.
In mature μLEDs fabrication process, flip-chip bonding is applied to not only integrate μLEDs with backplane but also improve the thermal and electrical properties of sapphire. Since the light is emitted from the sapphire side, the large thickness of sapphire leads to light refraction and divergence because of different refractive index between sapphire (n=1.77) and GaN (n=2.4), causing optical crosstalk in adjacent pixels. Therefore, polishing or removal of sapphire is necessary with increasing density of micro-LED array for display applications of μLEDs. In this study, we propose a possible method to solve the crosstalk problem. After flip-chip bonding, Laser lift-off (LLO) process is used to remove the sapphire substrate and the underfill dispensing is applied to reduce defects caused by LLO. | en |
| dc.description.provenance | Made available in DSpace on 2021-07-11T15:30:27Z (GMT). No. of bitstreams: 1 ntu-107-R05941079-1.pdf: 3460413 bytes, checksum: ee106027118c202105b85cfa7fdf7440 (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 致謝 I
中文摘要 II Abstract III Contents IV List of Figures VI List of Tables X Chapter 1 Introduction 1 1.1 Development of III-nitride-based light-emitting diodes 1 1.2 Introduction to Micro Light-Emitting Diodes 4 1.3 Literature review of micro-LEDs micro-display 5 1.4 Motivation and Purpose 9 Chapter 2 The Basic theory and Experimental Instruments 13 2.1 Brief Principles of LED 13 2.2 Flip-chip bonding technology 14 2.3 Laser lift-off (LLO) technique 17 2.4 Experimental instruments 19 2.4.1 Photolithography 19 2.4.2 E-beam Evaporator 21 2.4.3 Current-Voltage Measurement 22 2.4.4 Spectrophotometer 23 Chapter 3 Device Structures and Fabrication Process 25 3.1 Fabrication process of micro-LED arrays 25 3.2 Flip-chip bonding 30 3.3 LLO process 31 Chapter 4 Results and Discussion 37 4.1 Surface morphologies analysis of flip-chip micro-LEDs 37 4.2 I-V and L-I characteristics and analysis of flip-chip micro-LEDs 41 4.3 Surface morphologies analysis after LLO process 46 4.4 Comparison of optical characteristics before/after LLO 48 Chapter 5 Conclusions and Future works 53 5.1 Conclusions 53 5.2 Future works 54 Reference 56 | |
| dc.language.iso | en | |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 微顯示 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 雷射剝離 | zh_TW |
| dc.subject | 微型發光二極體陣列 | zh_TW |
| dc.subject | micro-display | en |
| dc.subject | laser lift-off | en |
| dc.subject | light-emitting diode | en |
| dc.subject | micro-LED array | en |
| dc.subject | GaN | en |
| dc.title | 利用雷射剝離製程提升氮化鎵微型發光二極體之效能與分析 | zh_TW |
| dc.title | Performance Analysis of GaN-based Micro Light-Emitting Diodes by Laser Lift-Off Process | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林清富(Ching-Fuh Lin),蔡永傑(Wing-Kit Choi) | |
| dc.subject.keyword | 發光二極體,微型發光二極體陣列,雷射剝離,氮化鎵,微顯示, | zh_TW |
| dc.subject.keyword | light-emitting diode,micro-LED array,laser lift-off,GaN,micro-display, | en |
| dc.relation.page | 63 | |
| dc.identifier.doi | 10.6342/NTU201803337 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-08-17 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| dc.date.embargo-lift | 2023-08-21 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-107-R05941079-1.pdf 未授權公開取用 | 3.38 MB | Adobe PDF |
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