請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78413
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳奕君 | |
dc.contributor.author | Cheng-En Yang | en |
dc.contributor.author | 楊承恩 | zh_TW |
dc.date.accessioned | 2021-07-11T14:55:42Z | - |
dc.date.available | 2023-07-31 | |
dc.date.copyright | 2020-05-21 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-05-04 | |
dc.identifier.citation | [1] J. E. Lilienfeld, 'Method and apparatus for controlling electric currents,' ed: Google Patents, 1930. [2] P. K. Weimer, 'The TFT a new thin-film transistor,' Proceedings of the IRE, vol. 50, no. 6, pp. 1462-1469, 1962. [3] H. Klasens and H. Koelmans, 'A tin oxide field-effect transistor,' Solid-State Electronics, vol. 7, no. 9, pp. 701-702, 1964, doi: 10.1016/0038-1101(64)90057-7 [4] Y. Y. Lin, D. I. Gundlach, S.F. Nelson, and T.N. Jackson, 'Pentacene-based organic thin-film transistors,' IEEE Transactions on Electron Devices, vol. 44, no. 8, pp. 1325-1331, 1997, doi: 10.1109/16.605476. [5] S. Zhang, C. Zhu, J. K. O. Sin, and P. K. T. Mok, ' A novel ultrathin elevated channel low-temperature poly-Si TFT,' IEEE Electron Device Letters, vol. 20, no. 11, pp. 569-571, 1999, doi: 10.1109/55.798046. [6] J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, 'Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,' Thin Solid Films, vol. 520, no. 6, pp. 1679-1693, 2012, doi: 10.1016/j.tsf.2011.07.018. [7] I. C. Chiu, Y. S. Li, M. S. Tu, and I. C. Cheng, 'Complementary oxide–semiconductor-based circuits with n-channel ZnO and p-channel SnO thin-film transistors,' IEEE Electron Device Letters, vol. 35, no. 12, pp. 1263-1265, 2014, doi: 10.1109/led.2014.2364578. [8] J. Zhang, J. Yang, Y. Li, J. Wilson, X. Ma, Q. Xin, and A. Song, 'High performance complementary circuits based on p-SnO and n-IGZO thin-film transistors,' Materials (Basel), vol. 10, no. 3, pp. 3-7, Mar 21 2017, doi: 10.3390/ma10030319. [9] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, 'Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,' Science, vol. 300, no. 5623, pp. 1269-1272, May 23 2003, doi: 10.1126/science.1083212. [10] K. Nomura, T. Aoki, K. Nakamura, T. Kamiya, T. Nakanishi, T. Hasegawa, M. Kimura, T. Kawase, M. Hirano, and H. Hosono, 'Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors,' Applied Physics Letters, vol. 96, no. 26, pp. 263509, 2010, doi: 10.1063/1.3458799. [11] V. Avrutin, D. J. Silversmith, and H. Morkoc, 'Doping asymmetry problem in ZnO: current status and outlook,' Proceedings of the IEEE, vol. 98, no. 7, pp. 1269-1280, 2010, doi: 10.1109/JPROC.2010.2043330 [12] Z. Q. Yao, S. L. Liu, L. Zhang, B. He, A. Kumar, X. Jiang, W. J. Zhang, and G. Shao, 'Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates,' Applied Physics Letters, vol. 101, no. 4, pp. 042114, 2012, doi: 10.1063/1.4739524. [13] X. Zou, G. Fang, L. Yuan, M. Li, W. Guan, and X. Zhao, 'Top-gate low-threshold voltage p-Cu2O thin-film transistor grown on SiO2/Si substrate using a high-κ HfON gate dielectric,' IEEE Electron device Letters, vol. 31, no. 8, pp. 827-829, 2010, doi: 10.1109/LED.2010.2050576. [14] S. C. Chen, C. K. Wen, T. Y. Kuo, W. C. Peng, and H. C. Lin, 'Characterization and properties of NiO films produced by rf magnetron sputtering with oxygen ion source assistance,' Thin Solid Films, vol. 572, no. 1, pp. 51-55, 2014, doi: 10.1016/j.tsf.2014.07.062. [15] Y. Chen, Y. Sun, X. Dai, B. Zhang, Z. Ye, M. Wang, and H. Wu., 'Tunable electrical properties of NiO thin films and p-type thin-film transistors,' Thin Solid Films, vol. 592, no. 1, pp. 195-199, 2015, doi: 10.1016/j.tsf.2015.09.025. [16] C. W. Lin, W. C. Chung, Z. D. Zhang, and M. C. Hsu, 'P-channel transparent thin-film transistor using physical-vapor-deposited NiO layer,' Japanese Journal of Applied Physics, vol. 57, no. 1S, pp. 01AE01, 2018, doi: 10.7567/jjap.57.01ae01. [17] M. S. Tu, 'An investigation of the performance and stability of p-type tin monoxide thin-film transistors ' Master Thesis, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 2014. [18] E. Fortunato, P. Barquinha, and R. Martins ' Oxide semiconductor thin‐film transistors: a review of recent advances,'Advance materials, vol. 24, no. 22, pp. 2945-2986, 2012, doi: 10.1002/adma.201103228. [19] J. K. Jeong, H. Won Yang, J. H. Jeong, Y. G. Mo, and H. D. Kim, 'Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors,' Applied Physics Letters, vol. 93, no. 12, pp. 123508, 2008, doi: 10.1063/1.2990657. [20] D. Hong, G. Yerubandi, H. Q. Chiang, and M. C. Spiegelbergs, 'Electrical modeling of thin-film transistors,' Critical Reviews in Solid State and Materials Sciences, vol. 33, no. 2, pp. 101-132, 2008, doi.org/10.1080/10408430701384808. [21] Z. Wang, P. K. Nayak, J. A. Caraveo-Frescas, and H. N. Alshareef, 'Recent developments in p-type oxide semiconductor materials and devices,' Advanced Materials, vol. 28, no. 20, pp. 3831-3892, 2016, doi: 10.1002/adma.201503080. [22] A. Ralland, J. Richard, J. P. Kleider, and D. Mencaraglia, 'Electrical properties of amorphous silicon transistors and MIS-devices: comparative study of top nitride and bottom nitride configurations,' Journal of The Electrochemical Society, vol. 140, no. 12, pp. 3679-3683, 1993, doi: 10.1149/1.2221149. [23] J. S. Ahn, R. Pode, and K. B. Lee, 'Study of Cu-doped SnO thin films prepared by reactive co-sputtering with facing targets of Sn and Cu,' Thin Solid Films, vol. 608, no. 1, pp. 102-106, 2016, doi: 10.1016/j.tsf.2016.04.024. [24] P. C. Chen, Y. C. Chiu, G. L. Liou, Z. W. Zheng, C. H. Cheng, and Y. H. Wu, 'Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment,' IEEE Electron Device Letters, vol. 38, no. 2, pp. 210-212, 2017, doi: 10.1109/led.2016.2646378. [25] H. Hosono, Y. Ogo, H. Yanagi, and T. Kamiya, 'Bipolar conduction in SnO thin films,' Electrochemical and Solid-State Letters, vol. 14, no. 1, pp. H13-H16, 2011, doi: 10.1149/1.3505288. [26] L. Liao, B. Yan, Y. F. Hao, G. Z. Xing, J. P. Liu, B. C. Zhao, Z. X. Shen, T. Wu, L. Wang, J. T. L. Thong, C. M. Li, W. Huang, and T. Yu, 'P-type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2O nanowires,' Applied Physics Letters, vol. 94, no. 11, pp. 113106, 2009, doi: 10.1063/1.3097029. [27] W. C. Chen, P. C. Hsu, C. W. Chien, K. M. Chang, C. J. Hsu, C. H. Chang, W. K. Lee, W. F. Chou, H. H. Hsieh and C. C. Wu, 'Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers,' Journal of Physics D: Applied Physics, vol. 47, no. 36, pp. 365101, 2014, doi: 10.1088/0022-3727/47/36/365101. [28] Y.-H. Jiang, 'A study on SnO thin films and SnO diodes using infrared rapid thermal annealing process,' Master Thesis, Insitute of Applied Mechanics, National Taiwan University, 2015. [29] A. Togo, F. Oba, I. Tanaka, and K. Tatsumi, 'First-principles calculations of native defects in tin monoxide,' Physical Review B, vol. 74, no. 19, pp. 195128, 2006, doi: 10.1103/PhysRevB.74.195128. [30] E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. K. Park, C. S. Hwang, and R. Martins, 'Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing,' Applied Physics Letters, vol. 97, no. 5, pp. 052105, 2010, doi: 10.1063/1.3469939. [31] L. Y. Liang, H. T. Cao, X. B Chen, Z. M. Liu, F. Zhuge, H. Luo, J. Li, Yi C. Lu, and W. Lu, 'Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities,' Applied Physics Letters, vol. 100, no. 26, pp. 263502, 2012, doi: 10.1063/1.4731271. [32] L. Y. Liang, Z. M. Liu, H. T. Cao, and X. Q. Pan, 'Microstructural, optical, and electrical properties of SnO thin films prepared on quartz via a two-step method,' ACS Applied Materials Interfaces, vol. 2, no. 4, pp. 1060-1065, 2010, doi: 10.1021/am900838z. [33] K. Nomura, T. Kamiya, and H. Hosono, 'Ambipolar oxide thin-film transistor,' Advanced Materials, vol. 23, no. 30, pp. 3431-3434, 2011, doi: 10.1002/adma.201101410. [34] H. Luo, L. Y. Liang, Q. Liu, and H. T. Cao, 'Magnetron-sputtered SnO thin films for p-type and ambipolar TFT applications,' ECS Journal of Solid State Science and Technology, vol. 3, no. 9, pp. Q3091-Q3094, 2014, doi: 10.1149/2.017409jss. [35] J. A. Caraveo-Frescas, P. K. Nayak, H. A. Al-Jawhari, D. B. Granato, U. Schwingenschlogl, and H. N. Alshareef, 'Record mobility in transparent p-type tin monoxide films and devices by phase engineering,' ACS Nano, vol. 7, no. 6, pp. 5160-5176, 2013. [36] J. H. Han, Y. J. Chung, B. K. Park, S. K. Kim, H. S. Kim, C. G. Kim, and T. M. Chung, 'Growth of p-Type tin(II) monoxide thin films by atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O,' Chemistry of Materials, vol. 26, no. 21, pp. 6088-6091, 2014, doi: 10.1021/cm503112v. [37] U. Demirkol, S. Pata, R. Mohammadigh, C. Musaoğlu, M. Özgür, S. Elmas, S. Özenc, and Ş. Korkmaza., 'Determination of the structural, morphological and optical properties of graphene doped SnO thin films deposited by using thermionic vacuum arc technique,' Physica B: Condensed Matter, vol. 569, no. 15, pp. 14-19, 2019, doi: 10.1016/j.physb.2019.05.035. [38] Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, 'P-channel thin-film transistor using p-type oxide semiconductor, SnO,' Applied Physics Letters, vol. 93, no. 3, pp. 032113, 2008, doi: 10.1063/1.2964197. [39] H.-N. Lee, H.-J. Kim, and C.-K. Kim, 'P-channel tin monoxide thin film transistor fabricated by vacuum thermal evaporation,' Japanese Journal of Applied Physics, vol. 49, no. 2, pp. 020202, 2010, doi: 10.1143/jjap.49.020202. [40] L. Y. Liang, Z. M. Liu, H. T. Cao, Z. Yu, Y. Y. Shi, A. H. Chen, H. Z. Zhang, Y. Q. Fang, and X. L. Sun, 'Phase and optical characterizations of annealed SnO thin films and their p-type TFT application,' Journal of The Electrochemical Society, vol. 157, no. 6, pp. H598-H602, 2010, doi: 10.1149/1.3385390. [41] H. Yabuta, N. Kaji., R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, 'Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits,' Applied Physics Letters, vol. 97, no. 7, pp. 072111, 2010, doi: 10.1063/1.3478213. [42] E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. K. Park, C.S. Hwang, and R. Martins, 'Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing,' Applied Physics Letters, vol. 97, no. 5, pp. 052105, 2010, doi: 10.1063/1.3469939 [43] K. Okamura, B. Nasr, R. A. Brand, and H. Hahn, 'Solution-processed oxide semiconductor SnO in p-channel thin-film transistors,' Journal of Materials Chemistry, vol. 22, no. 11, pp. 4607-4610, 2012, doi: 10.1039/c2jm16426d. [44] L. Y. Liang, Z. M. Liu, H. T. Cao, W. Y. Hsu, X. L. Sun, H. Lao, and K. Cang, 'The structural, optical and electrical properties of Y-doped SnO thin films and their p-type TFT application,' Journal of Physics D: Applied Physics, vol. 45, no. 8, pp. 085101, 2012, doi: 10.1088/0022-3727/45/8/085101. [45] P. C. Hsu, W. C. Chen, Y. T. Tsai, Y. C. Kung, C. H. Chang, C. J. Hsu, C. C. Wu, and H. H. Hsieh, 'Fabrication of p-type SnO thin-film transistors by sputtering with practical metal electrodes,' Japanese Journal of Applied Physics, vol. 52, no. 5S1, pp. 05DC07, 2013, doi: 10.7567/jjap.52.05dc07. [46] H. A. Al-Jawhari, J. A. Caraveo-Frescas, M. Hedhili, and H. N. Alshareef, 'P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures,' ACS Applied Materials Interfaces, vol. 5, no. 19, pp. 9615-9619, 2013, doi.org/10.1021/am402542. [47] I. C. Chiu and I. C. Cheng, 'Gate-bias stress stability of p-type SnO thin-film transistors fabricated by RF-sputtering,' IEEE Electron Device Letters, vol. 35, no. 1, pp. 90-92, 2014, doi: 10.1109/led.2013.2291896. [48] Y. J. Han, Y. J. Choi, I. T. Cho, S. H. Jin, J. H. Lee, and H. I. Kwon, 'Improvement of long-term durability and bias stress stability in p-type SnO thin-film yransistors using a SU-8 passivation layer,' IEEE Electron Device Letters, vol. 35, no. 12, pp. 1260-1262, 2014, doi: 10.1109/led.2014.2363879. [49] Y. J. Han, Y. J. Choi, C. Y. Jeong, D. Lee, S. H. Song, and H. I. Kwon, 'Environment-dependent bias stress stability of p-type SnO thin-film transistors,' IEEE Electron Device Letters, vol. 36, no. 5, pp. 466-468, 2015, doi: 10.1109/LED.2015.2409854 [50] J. H. Lee, Y. J. Choi, C. Y. Jeong, C. W. Lee, and H. I. Kwon, 'Temperature-dependent electrical instability of p-type SnO thin-film transistors,' Journal of Vacuum Science Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 34, no. 4, pp. 041210 , 2016, doi: 10.1116/1.4949558. [51] J. H. Lee, Y. J. Choi, C. Y. Jeong, D. K. Jung, S. Ham, and H. I. Kwon, 'Electrical instability of p-channel SnO thin-film transistors under light illumination,' IEEE Electron Device Letters, vol. 37, no. 3, pp. 295-298, 2016, doi: 10.1109/led.2016.2516578. [52] C. W. Zhong, H. C. Lin, J. R. Tsai, K. C. Liu, and T. Y. Huang, 'Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors,' Japanese Journal of Applied Physics, vol. 55, no. 4S, pp. 04EG02, 2016, doi: 10.7567/jjap.55.04eg02. [53] H. J. Kim, C. Y. Jeong, S. D. Bae, J. H. Lee, and H. I. Kwon, 'Charge transport mechanism in p-channel tin monoxide thin-film transistors,' IEEE Electron Device Letters, vol. 38, no. 4, pp. 473-476, 2017, doi: 10.1109/led.2017.2672730. [54] S. H. Kim, I. H. Baek, D. H. Kim, J. J. Pyeon, T. M. Chung, S. H. Baek, J. S. Kim, J. H. Han, and S. K. Kim, 'Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films,' Journal of Materials Chemistry C, vol. 5, no. 12, pp. 3139-3145, 2017, doi: 10.1039/c6tc04750e. [55] M. P. Hung, J. Genoe, P. Heremans, and S. Steudel, 'Off-current reduction in p-type SnO thin film transistors,' Applied Physics Letters, vol. 112, no. 26, pp. 263502, 2018, doi: 10.1063/1.5037306. [56] H. Y. Jeong, S. H. Kwon, H. J. Joo, M. G. Shin, H. S. Jeong, D. H. Kim, and H. I. Kwon, 'Radiation-tolerant p-type SnO thin-film transistors,' IEEE Electron Device Letters, vol. 40, no. 7, pp. 1124-1127, 2019, doi: 10.1109/led.2019.2914252. [57] C. W. Ou, Dhananjay, Z. Y. Ho, Y. C. Chuang, S. S. Cheng, M. C. Wu, K. C. Ho, and C. W. Chu, 'Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits,' Applied Physics Letters, vol. 92, no. 12, pp. 122113, 2008, doi: 10.1063/1.2898217. [58] Dhananjay, C. W. Chu, C. W. Ou, M. C.i Wu, and Z. Y. Ho, 'Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors,' Applied Physics Letters, vol. 92, no. 23, pp. 232103, 2008, doi: 10.1063/1.2936275. [59] J. A. Caraveo-Frescas and H. N. Alshareef, 'Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors,' Applied Physics Letters, vol. 103, no. 22, p. 222103, 2013, doi: 10.1063/1.4833541. [60] C.-Y. Jeong, D. Lee, Y.-J. Han, Y.-J. Choi, and H.-I. Kwon, 'Subgap states in p-channel tin monoxide thin-film transistors from temperature-dependent field-effect characteristics,' Semiconductor Science and Technology, vol. 30, no. 8, pp. 085004, 2015, doi: 10.1088/0268-1242/30/8/085004. [61] Y. S. Li, J. C. He, S. M. Hsu, C. C. Lee, D. Y. Su, F. Y. Tsai, and I. C. Cheng, 'Flexible complementary oxide–semiconductor-based circuits employing n-channel ZnO and p-channel SnO thin-film transistors,' IEEE Electron Device Letters, vol. 37, no. 1, pp. 46-49, 2016, doi: 10.1109/led.2015.2501843. [62] P. C. Chen, Y. C. Chiu, Z. W. Zheng, M. H. Lin, C. H. Cheng, G. L. Liou, H. H. Hsu, and H. l. Kao., 'Fast low-temperature plasma process for the application of flexible tin-oxide-channel thin film transistors,' IEEE Transactions on Nanotechnology, vol. 16, no. 5, pp. 876-879, 2017, doi: 10.1109/tnano.2017.2719946. [63] H. Sato, T. Minami, S. Takata, and T. Yamada, 'Transparent conducting p-type NiO thin films prepared by magnetron sputtering,' Thin Solid Films, vol. 236, no. 1-2, pp. 27-31, 1993, doi: 10.1016/0040-6090(93)90636-4. [64] S. Lany, J. Osorio-Guillén, and A. Zunger, 'Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO,' Physical Review B, vol. 75, no. 24, pp. 241203, 2007, doi: 10.1103/PhysRevB.75.241203. [65] C. C. Wu and C. F. Yang, 'Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate,' ACS Applied Materials Interfaces, vol. 5, no. 11, pp. 4996-5001, 2013, doi: 10.1021/am400763m. [66] H. Shimotani, H. Suzuki, K. Ueno, M. Kawasaki, and Y. Iwasa, 'P-type field-effect transistor of NiO with electric double-layer gating,' Applied Physics Letters, vol. 92, no. 24, pp. 242107, 2008, doi: 10.1063/1.2939006. [67] S. Takami, R. Hayakawa, Y. Wakayama, and T. Chikyow, 'Continuous hydrothermal synthesis of nickel oxide nanoplates and their use as nanoinks for p-type channel material in a bottom-gate field-effect transistor,' Nanotechnology, vol. 21, no. 13, pp. 134009, 2010, doi: 10.1088/0957-4484/21/13/134009. [68] J. Jiang, X. Wang, Q. Zhang, J. Li, and X. X. Zhang, 'Thermal oxidation of Ni films for p-type thin-film transistors,' Physical Chemistry Chemical Physics, vol. 15, no. 18, pp. 6875-6878, 2013, doi: 10.1039/c3cp50197c [69] M. E. A. Hussein, 'Fabrication and characterization of GaN based nanowires for photoelectrochemical water splitting applications,' Ph.D. Thesis, Department of Physics Graduate School, Chonnam National University, 2015. [70] S. M. George, 'Atomic layer deposition: an overview,' Chemical Reviews, vol. 110, no. 1, pp. 111-131, 2009, doi:10.1021/cr900056b. [71] 'Principle of atomic layer deposition (take Al2O3 as an example).' https://www.slideshare.net/CambridgeNano/ald-tutorial-8818400, 03172020. [72] C. H. Chen, 'Characterization of RF magnetron sputtered SnO thin films,' Master Thesis, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 2014. [73] I. C. Chiu, 'P-type tin monoxide thin-film transistors and their application in complementary metal-oxide-semiconductor (CMOS) circuit,' PH.D. Thesis, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 2014. [74] C. H. Tsai, 'Characterization of p-type single-gate and double-gate tin monoxide thin-film transistors using gated-four-probe measurements,' Master Thesis, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 2017. [75] S. Y. Sung, S. Y. Kim, K. M. Jo, J. H. Lee, J. J. Kim, S. G. Kim, K. H. Chai, S. J. Pearton, D. P. Norton, and Y. W. Heo, 'Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature,' Applied Physics Letters, vol. 97, no. 22, pp. 222109, 2010, doi: 10.1063/1.3521310. [76] S. Franssila, Introduction to microfabrication. John Wiley Sons, 2010. [77] R. G. Poulsen, 'Plasma etching in integrated circuit manufacture—a review,' Journal of Vacuum Science and Technology, vol. 14, no. 1, pp. 266-274, 1977, doi: 10.1116/1.569137. [78] Thermo K-Alpha (XPS), https://www.thermofisher.com/order/catalog/product/IQLAADGAAFFACVMAHV, 03172020 [79] N. Lu, L. Li, and M. Liu, Advanced Thermoelectric Materials, pp. 79-87, John Wiley Sons, 2019. [80] Q. P. Tran, J. S. Fang, and T. S. Chin, 'Optical properties and boron doping-induced conduction-type change in SnO2 thin films,' Journal of Electronic Materials, vol. 45, no. 1, pp. 349-356, 2015, doi: 10.1007/s11664-015-4081-1. [81] F. Bodinoa, G. Bauda, M. Benmalekb, J. P. Bessea, H. M. Dunlopb, and M. Jacqueta, 'Alumina coating on polyethylene terephthalate,' Thin Solid Films, vol. 241, no. 1–2, 1 pp. 21-24, 1994, doi: 10.1002/jbm.a.35218. [82] S. Ardizzone, C. L. Bianchi, M. Fadoni, B. Vercelli, 'Magnesium salts and oxide: an XPS overview,' Applied Surface Science, vol. 119, no. 3-4, pp. 45-49, 1997, doi: 10.1116/1.1247723. [83] M. A. Stranick and A. Moskwa, 'SnO by XPS,' Surface Science Spectra, vol. 2, no. 1, pp. 253-259, 1993, doi: 10.1016/S0169-4332(97)00180-3. [84] H. W. Nesbitt, D. Legrand, G. M. Bancroft, 'Interpretation of Ni 2p XPS spectra of Ni conductors and Ni insulators,' Physics and Chemistry of Minerals, vol. 27, no. 5, pp. 357–366, 2000, doi.org/10.1007/s002690050265. [85] M. A. Stranick and A. Moskwa, 'SnO2 by XPS,' Surface Science Spectra, vol. 2, no. 1, pp. 50-54, 1993, doi: 10.1116/1.1247724. [86] R. I .Hegde, S. R. Sainkar, S. Badrinarayanan, and A. P. B. Sinha, ' A study of dilute tin alloys by X-ray photoelectron spectroscopy ' Journal of Electron Spectroscopy and Related Phenomena, vol. 24, no. 1, pp. 19-25, 1981, doi.org/10.1016/0368-2048(81)80041-2. [87] D. Shuttleworth, 'Preparation of metal-polymer dispersions by plasma Techniques. an ESCA investigation,' The Journal of Physical Chemistry, vol. 84, No. 12, pp. 1629~1634, 1980, doi.org/10.1021/j100449a038. [88] R. O. Ansell, T. Dickinson, A. F. Povey, and P. M. A. Sherwood, 'X-ray photoelectron spectroscopic studies of tin electrodes after polarization in sodium hydroxide solution,' Journal of The Electrochemical Society, vol. 124, No. 9, pp. 1360~1364, 1977. [89] H. Nohira, W. Tsai, W. Besling, E. Young, J. Petry, T. Conarda, W. Vandervorst, S. De Gendta, M. Heyns, J. Maes, M. Tuominen, 'Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy,' Journal of Non-Crystalline Solids, vol. 303, no. 1, pp. 83-87, 2002, doi.org/10.1016/S0022-3093(02)00970-5. [90] L. S. Hsu and R. S. Williams, 'Valence-band and core-level photoemission satellites in the NiGa intermetallic compound,' Physics Letters A, vol. 178, no. 1–2 ,pp. 192-196, 1993, doi: 0.1016/0375-9601(93)90750-T. [91] X. Luo, Y. Li, H. Yang, Y. Liang, K. He, W. Sun, H. H. Lin, S. Yao, X. Lu, L. Wan, and Z. Feng, 'Investigation of HfO2 thin films on Si by X-ray photoelectron spectroscopy, Rutherford backscattering, grazing incidence X-ray diffraction and variable angle spectroscopic ellipsometry,' Crystals, vol. 8, no. 6, pp. 1-16 , 2018, doi:10.3390/cryst8060248. [92] S. Lee, W. G. Kim, S.-W. Rhee, and K. Yong, 'Resistance switching behaviors of hafnium oxide films grown by MOCVD for nonvolatile memory applications,' Journal of The Electrochemical Society, vol. 155, no. 2, pp. H92-H96, 2008, doi: 10.1149/1.2814153. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/78413 | - |
dc.description.abstract | 本論文主要目的有兩個,一是研究p 型SnNiOx 薄膜性質,二是開發p 型SnNiOx 薄膜電晶體及探討其電性。長期以來,n 型高效能氧化物薄膜電晶體(TFT)的特性遠優於p 型,特別是p 型氧化物TFT 的載子遷移率往往不足以應用於互補的反相器和邏輯電路。因此,提高p 型氧化物薄膜電晶體的載子遷移率是本研究的目標。 研究中我們使用磁控射頻共濺射技術沉積 SnNiOx 薄膜,在固定錫槍的功率、工作壓力、濺鍍時間、氬氧流量比和後退火溫度條件下,調變鎳槍的功率(0 – 50 W),以獲得不同鎳摻雜量的SnNiOx 薄膜。 在薄膜分析部分,從低掠角X 光繞射分析得知,隨鎳槍濺鍍功率增加,SnNiOx薄膜結晶方向從α-SnO(110)轉變為非晶再轉變為α-SnO(101)。接著根據X光光電子能譜縱深分析發現,在錫槍/鎳槍的濺鍍功率為50 W / 50 W 時,從表面到薄膜深處,錫的價數從Sn4+為主,再到Sn2+為主,最後是以Sn0+為主,這表示越靠近表面越容易氧化。此外,Ni 的成分也隨著縱深而增加。從光學分析得知,隨鎳槍濺鍍功率增加,SnNiOx 薄膜的光學直接能隙逐漸降低。從賽貝克係數的量測確認使用不同鎳槍濺鍍功率所沉積的SnNiOx 薄膜除了錫槍/鎳槍的濺鍍功率為50 W / 20 W 之外其餘均為p 型。 接著利用不同鎳槍濺鍍功率下所獲得的SnNiOx 薄膜作為主動層,採用高介電常數材料氧化鉿作為介電層,製備下閘極交錯型p 型SnNiOx 薄膜電晶體。在錫槍/鎳槍濺鍍功率為50 W / 35 W 時,電晶體具最高開關比 (1074),而在錫槍/鎳槍濺鍍功率為50 W / 50 W,有最高的場效遷移率 (6.2 cm2V-1s-1),大約是氧化亞錫薄膜電晶體 (0.48 cm2V-1s-1) 的13 倍之多。 | zh_TW |
dc.description.abstract | There are two main objectives in this thesis. One is to study the properties of p-type SnNiOx thin films, and the other is to fabricate and investigate p-type SnNiOx thin-film transistors (TFTs). Today, most of the high performance oxide TFTs are of ntype. The development of p-type oxide TFTs is still in its early stage. In particular, the mobility of p-type oxide TFTs is insufficient for complementary inverters and logic circuits applications. Therefore, enhancing the mobility of p-type oxide TFTs is our goal. In this research, we use the RF magnetron co-sputtering technique to deposit SnNiOx thin films. At a fixed Sn gun power, working pressure (WP), sputtering time, oxygen fraction (OFR) in sputtering gas, and post-deposition annealing (PDA) temperature, the Ni gun power is adjusted from 0 to 50 W to obtain SnNiOx thin films with various Ni doping concentrations. The grazing incident X-ray diffraction (GIXRD) analysis shows that the preferred orientation of the SnNiOx thin film changes from α-SnO (110) to amorphous and then to α-SnO (101) as the power of Ni gun increases. The X-ray photoemission spectroscopy (XPS) depth profiling analysis reveals that the predominant valance of Sn in the SnNiOx thin film changes from Sn4+ to Sn2+ to Sn0+ from the top surface to deep inside the film, indicating the surface oxidization effect. In addition, the Ni content is higher in the deeper part of the SnNiOx thin film. The optical absorption analysis shows that as the power of the Ni gun increases, the optical bandgap gradually decreases. The Seebeck coefficient measurement confirms that the SnNiOx thin films deposited with Ni gun at various sputtering powers are all p-type except the one deposited with Sn-gun / Ni-gun at the power of 50 W / 20 W. Inverted-staggered bottom-gate TFTs with SnNiOx channels deposited at various Ni gun powers are then fabricated. High-k HfO2 is used as the gate dielectric. At the Sn-gun / Ni-gun power of 50 W / 35 W, the TFT exhibits the highest on-off ratio of 1074. At the Sn-gun / Ni-gun power of 50 W / 50 W, the TFT has the highest field-effect mobility of 6.2 cm2V-1s-1, which is thirteen times larger than that of the SnO TFT (0.48 cm2V-1s-1). | en |
dc.description.provenance | Made available in DSpace on 2021-07-11T14:55:42Z (GMT). No. of bitstreams: 1 ntu-109-R06941122-1.pdf: 7033560 bytes, checksum: f2b94f38bedad0ae51b0f4ec7b3c9a0f (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | ACKNOWLEDGEMENTS i 中文摘要 ii ABSTRACT iii TABLE OF CONTENT v LIST OF ABBREVIATIONS viii LIST OF FIGURES ix LIST OF TABLES xiv CHAPTER 1 Introduction 1 1.1 Research background 1 1.2 Research motivation 2 1.3 Thesis structure 3 CHAPTER 2 Theoretical Basis and Literature Review 6 2.1 Introduction to TFTs [17] 6 2.1.1 Working principle of the TFTs [17] 7 2.1.2 Characteristic parameters of the TFTs [17] 8 2.1.3 Characterization of gate dielectric layer 12 2.2 Co-sputtering deposition method [23] 13 2.3 Development of NiO and SnO TFTs 14 2.3.1 Review of p-type oxides [21] 14 2.3.2 SnO thin film TFT 19 2.3.3 NiO thin film TFT 24 CHAPTER 3 Experiment 26 3.1 Thin-film deposition techniques 26 3.1.1 E-beam evaporation [69] 26 3.1.2 Atomic layer deposition (ALD) [70] 27 3.1.3 RF magnetron sputtering [72] 29 3.2 Photo-lithography process [74] 31 3.3 Etching process [76] 33 3.4 Fabrication procedures of devices 35 3.4.1 MIM (metal-insulator-metal) 35 3.4.2 Fabrication processes of p-type SnO and SnNiOx TFTs 39 3.5 Analysis and measurement instruments 46 3.5.1 Grazing incident X-ray diffractometer (GIXRD) [17] 46 3.5.2 X-ray photoelectron spectrometry [17] 48 3.5.3 UV-Visible-NIR spectrometer [28] 51 3.5.4 Seebeck effect measurement [79] 52 3.5.5 Capacitance-voltage measurement 54 3.5.6 Characterization of TFTs 54 3.5.7 Deposition parameters of Ref. SnO and SnNiOx thin films for different analysis and TFT channels 55 CHAPTER 4 Results and Discussion 57 4.1 GIXRD analysis of the Ref. SnO and SnNiOx thin films 57 4.2 XPS analysis of Ref. SnO and SnNiOx thin films 58 4.2.1 XPS depth profiling of Ref. SnO thin film 58 4.2.2 XPS depth profiling of the SnNiOx thin film 60 4.3 Optical properties of Ref. SnO and SnNiOx thin films 74 4.4 Seebeck coefficient measurement of Ref. SnO and SnNiOx thin films 79 4.5 Capacitance-voltage characteristics of HfO2 dielectric layer 80 4.6 Characteristics of p-type Ref. SnO TFT and SnNiOx TFTs 81 CHAPTER 5 Conclusion and Future Work 89 5.1 Conclusion 89 5.2 Future work 90 APPENDICES 91 Appendix A 91 Different batches of p-type SnNiOx TFTs 91 Appendix B 93 Bonding ratios of SnNiOx thin film with Sn-gun /Ni-gun power ratio fixed at 50/50 (W/W) 93 Appendix C 94 P-type SnNiOx TFTs fabricated by pulse-mode co-sputtering 94 Appendix D 98 Thickness of Ref. SnO and SnNiOx thin film with Sn-gun /Ni-gun power ratio fixed at 50/50 (W/W) 98 REFERENCES 100 | |
dc.language.iso | en | |
dc.title | P通道錫鎳氧化物薄膜電晶體 | zh_TW |
dc.title | P-Channel SnNiOx Thin-Film Transistors | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳建彰,吳育任,徐振哲 | |
dc.subject.keyword | 氧化亞錫,氧化鎳,氧化物薄膜電晶體,磁控射頻共濺鍍技術, | zh_TW |
dc.subject.keyword | tin monoxide,nickel oxide,oxide thin film transistor,RF magnetron sputtering, | en |
dc.relation.page | 106 | |
dc.identifier.doi | 10.6342/NTU202000791 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2020-05-04 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
dc.date.embargo-lift | 2023-07-31 | - |
顯示於系所單位: | 光電工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-109-R06941122-1.pdf 目前未授權公開取用 | 6.87 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。