應用於5G行動通訊之砷化鎵功率放大器與應用於WLAN之功率放大器研究

Abstract

隨著第五代行動通訊(5G)相關研究之發展，未來的無線系統預期將往毫米波頻段演進，以提供更寬的頻寬以及更高傳輸速率的傳輸。 本論文主要分成三部分：第一部分為發射機前端電路之功率放大器相關研究。 此部分展示了應用於38GHz之增強型 (E-mode) 0.15微米砷化鎵 (GaAs)製程功率放大器。此功率放大器採用四路直接功率結合架構。此提出之功率放大器於38到40 GHz操作頻率下達到了24.7 dBm '±' 0.5 dB 之1 dB壓縮點輸出功率、25.2 dBm '±' 0.3 dB之飽和輸出功率、19.5 '±' 2.7 % 之最大功率附加效率，以及提供19.1 dB之小訊號增益。 第二部分展示了應用於38GHz之空乏型 (D-mode) 0.15微米砷化鎵 (GaAs) 製程具備線性器之功率放大器。此功率放大器運用一並聯二極體線性器來降低三階交互調變信號，以提高線性度，於37到39 GHz操作頻率下達到23.2 dBm '±' 0.5 dB之1dB壓縮點輸出功率、23.6 dBm '±' 0.3 dB之飽和輸出功率、25 '±' 1.8 % 之最大功率附加效率、22.3 dB之小訊號增益，以及在線性器開啟狀況下可提供19.4 dBm之線性輸出功率同時在三階交互調變失真可降低至-55.9 dBc。 第三部分之功率放大器製作於180nm SiGe BiCMOS製程。此功率放大器在5 GHz提供9.2 dB之小信號增益、25.9 dBm 之1 dB壓縮點輸出功率、26.6 dBm 之飽和輸出功率以及14.3 %之最大功率附加效率。

With the development of 5G mobile communication, the wireless communication system is expected to advance to millimeter wave (mm-wave) for broader bandwidth and high data rate transmission. This thesis is divided into three parts. The first part is the research of power amplifier which is the front end circuit of transmitter. The proposed PA operated at 38 GHz is fabricated in 0.15-µm enhancement mode (E-mode) GaAs PHEMT process. The proposed power amplifier utilizing 4-way direct-combining structure achieves OP1dB of 24.7 dBm '±' 0.5 dB, Psat of 25.2 dBm '±' 0.3 dB with 22.2 '±' 1.5 % PAEmax in the frequency range of 38 to 40 GHz and provides small signal gain of 19.1 dB. The second part shows the power amplifier operated at 38 GHz with diode linearizer which is fabricated in 0.15-µm depletion mode (D-mode) GaAs PHEMT process. This proposed PA utilizes a parallel diode to reduce third-order intermodulation for the improvement of linearity. The proposed power amplifier achieves OP1dB of 23.2 dBm '±' 0.5 dB, Psat of 23.6 dBm '±' 0.3 dB with 25 '±' 1.8 % PAEmax in the frequency range of 37 to 39 GHz and provides small signal gain of 22.3 dB. When linearizer turns on, it achieves linear output power of 19.4 dBm and reduces IMD3 to -55.9 dBc simultaneously. The power amplifier of the third part is fabricated in 0.18-um SiGe BiCMOS process. The proposed PA provides small signal gain of 9.2 dB. It achieves OP1dB of 25.9 dBm and Psat of 26.6 dBm with PAEmax of 14.3 % at 5 GHz.