1310奈米長波長垂直共振腔面射型雷射製程開發與分析

Abstract

本論文探討長波長 1310 奈米遠紅外光高速垂直共振腔面射型雷射之設計其磊晶結構、製程開發以及電性量測的結果。又以開發全新製程技術為主要內容。論文內容包含磊晶結構設計、實際成長磊晶結構與模擬的差異、製程開發、步驟和光電直流特性分析。 第一章，介紹光通訊之優勢及垂直共振腔面射型雷射的發展背景和未來展望，並且探討 1310 奈米長波長在通訊上的應用。 第二章，利用模擬軟體Matlab模擬垂直共振腔面射型雷射比較不同對數之上部布拉格反射鏡的反射率，以及不同對數之下部布拉格反射鏡的反射率。模擬之結果與實際磊晶的晶圓的比較。 第三章，利用類似結構進行測試，選擇比及蝕刻的測試，並用不同溶液的比例及不同酸的混合，找到最適合當作本次實驗的混合溶液以及發現晶格面的問題。緊接著進行正式片的測試，並著手修改原先設計好的光罩及製程流程，把預期的元件位置，旋轉45度。發現本次設計的光罩無法如期達成我們的目標，繼續修改光罩，及做製程的測試已達到半導體/空氣的結構。 第四章，最後經過4次光罩的重新設計及製程修改，我們成功的製做出有半導體/空氣結構的元件，在本章節一開始會注重在最後修訂完後的光罩設計及製程步驟之細節；而後討論直流量測的特性，如：光頻譜分析、光電曲線等比較。討論不同孔徑大小下光電曲線的趨勢，以及上部布拉格反射鏡的有進行蝕刻即沒有蝕刻之電性的差異及製程探討。

In this thesis, we focus on epitaxy structure design, process development, and electrical measurement analysis of 1310 nm long wavelength VCSEL ( vertical cavity surface emitting laser ). Moreover, the main content of this thesis is concentrated on the development of the brand new fabrication processes and techniques. The thesis is divided into 5 chapters. The introduction of VCSELs including the advantages in optical communication, the history background and the application of 1310 nm long wavelength VCSELs will be described in the first chapter. In second chapter, we use simulation software, Matlab, to compare the different reflectance in different pairs of top and bottom distributed bragg reflector, DBR. Also, we compare the simulation result with actual epitaxy result. In chapter three, the etching tests which include etching rate and different proportion of acid solution in dummy wafers. Furthermore, we find out that the facet issue of InP materials will affect our process fabrication and increase difficulties. Therefore, we begin to modify our mask and revise our process, such as tilt 45 o of our devices. However, the process is not reached our expectation, thus, we continue to modify our mask and optimize processes. Last but not least, after 4 times modification and redesign of the mask and process, we successfully demonstrate and fabricate the air / semiconductor stucture device. In the beginning of the forth chapter will discuss about the detail process of the final completed processes. Then we will discuss about the characterization analysis of DC measurement, for instances, LI curve, IV curve, and spectrum with different aperture and top DBR . In the end of this thesis, the conclusion will show in chapter five.