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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 薛文証 | |
dc.contributor.author | Chih-Ying Yen | en |
dc.contributor.author | 顏志穎 | zh_TW |
dc.date.accessioned | 2021-07-10T22:11:07Z | - |
dc.date.available | 2021-07-10T22:11:07Z | - |
dc.date.copyright | 2018-08-02 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-07-27 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77603 | - |
dc.description.abstract | 本論文建構外爾半金屬層狀結構的外爾費米子傳播行為模型,推導出電子在有限層數結構內的穿透率、電流、電導等公式,接著探討外爾半金屬中不同手徵粒子受電位障與磁位障的影響,最後深入討論不同的位障以及改變位障強度、寬度、結構週期數及排列方式對電子傳輸的影響,明顯看到施予電壓位障並不會使克萊恩穿隧通道消失,且穿透率能帶和電子入射角始終對稱,而鐵磁性材料所引起的磁位障則會關閉正向入射通道,禁帶的出現使得某些能量下的電子無法穿透,且藉由調控各項參數可使結構出現顯著的波向量濾波行為,以及解決實現相對論性材料電子元件的難題克萊恩穿隧,因此對於實現以外爾半金屬為基礎的原件提供了簡單的構想。 | zh_TW |
dc.description.abstract | In this thesis, the propagation behavior model of Weyl fermion of layered structure on the Weyl semimetal is constructed. The transmission, current, conductance of the finite layered structure are calculated. Then, the influence of potential barrier and magnetic barrier on different chiral particle is investigated. Finally, the influence of different potential barrier on the Weyl semimetal and the barrier strength, width, the period of structural and the arrangement for the electron transport are deeply investigated. It is obvious that the application of the voltage barrier does not cause the Klein tunneling to disappear. Besides, the transmission spectra and the angle of incidence are always symmetrical. Magnetic barrier arising from ferromagnetic material will cause normally incident channel to close. In addition, a forbidden band to make electron unable to transmit completely in some energy region is presented. By adjust different structure parameter, system will show strong wave vector filtering behavior, which can solve the biggest problem between implementation of the relativistic material base electronic devices. | en |
dc.description.provenance | Made available in DSpace on 2021-07-10T22:11:07Z (GMT). No. of bitstreams: 1 ntu-107-R05525090-1.pdf: 11502296 bytes, checksum: 274c2921b2f5e746e735bb2205616ccc (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | 摘要 i
Abstract ii 目錄 iii 圖目錄 v 符號表 ix 第一章 導論 1 1.1. 背景與研究動機 1 1.2. 歷史文獻回顧 3 1.3. 論文架構 5 第二章 基本理論 6 2.1. 狄拉克方程式與狄拉克材料 6 2.1.1. 狄拉克方程式與外爾方程式 6 2.1.2. 螺旋性與手徵 9 2.2. 石墨烯、拓樸絕緣體、拓樸半金屬 11 2.2.1. 石墨烯 11 2.2.2. 拓樸絕緣體 12 2.2.3. 拓樸半金屬 13 2.3. 外爾半金屬 14 2.3.1. 費米弧表面態 14 2.3.2. 手徵反常 16 第三章 外爾半金屬模型 18 3.1. 雙節點模型 18 3.2. 漢米爾頓算符 19 3.3. 波函數之本徵向量 20 3.3.1. 方向傳遞 21 3.3.2. 方向傳遞 24 3.4. 轉移矩陣法 26 3.5. 有限層數結構之穿透率、電導 29 3.5.1. 穿透率 29 3.5.2. 電導 31 第四章 層狀電位障外爾半金屬的電子傳輸 35 4.1. 單層電位障下結構參數對電子傳輸之影響 37 4.1.1. 電位障對不同手徵粒子的影響 37 4.1.2. 入射角度與傳遞方向對傳輸性質的影響 37 4.1.3. 入射能量與結構參數對傳輸性質的影響 38 4.2. 雙層電位障下結構參數對電子傳輸之影響 39 4.3. 多層電位障結構對電子傳輸之影響 40 第五章 層狀磁位障外爾半金屬的電子傳輸 52 5.1. 磁位障對不同手徵粒子的影響 53 5.2. 磁位障平行傳播方向對傳輸性質的影響 53 5.2.1. 單層磁位障 53 5.2.2. 雙層磁位障 55 5.3. 磁位障垂直傳播方向對傳輸性質的影響 56 5.3.1. 單層磁位障 56 5.3.2. 雙層磁位障 57 第六章 結論與未來展望 72 6.1. 結論 72 6.2. 未來展望 74 參考文獻 75 | |
dc.language.iso | zh-TW | |
dc.title | 反轉對稱外爾半金屬之電子傳輸特性 | zh_TW |
dc.title | Electronic Transport Property of Inversion-Symmetric Weyl Semimetals | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 鄭勝文,黃智賢,張慶瑞,邱仁政 | |
dc.subject.keyword | 外爾半金屬,手徵費米子,克萊恩傳輸,轉移矩陣,電導,自旋電子學, | zh_TW |
dc.subject.keyword | Weyl semimetal,chiral fermion,Kleining tunneling,transfer matrix,conductance,spintronics, | en |
dc.relation.page | 81 | |
dc.identifier.doi | 10.6342/NTU201802060 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2018-07-27 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
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