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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂宗昕 | |
dc.contributor.author | Che-Yuan Yang | en |
dc.contributor.author | 楊哲遠 | zh_TW |
dc.date.accessioned | 2021-07-10T21:33:20Z | - |
dc.date.available | 2021-07-10T21:33:20Z | - |
dc.date.copyright | 2017-08-29 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-06-26 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/76582 | - |
dc.description.abstract | 為解決現有白光發光二極體(白光LED)色溫高及演色性差之缺點,本研究針對其中之螢光材料進行改良,製備出一系列新型矽氧化物與矽氮化物螢光材料。研究中透過發光中心間之能量轉移調控螢光粉體之激發與放光光譜;利用新型製程改善粉體之結晶性、粒徑分布以及發光效率;並透過粉體與藍光發LED晶片之實際封裝,製備出具備高演色性之白光LED。
論文中首先於第三章製備ZnGd4Si3O13: Tb3+, Mn2+新型矽氧化物螢光粉體。在紫外光的激發下,ZnGd4Si3O13: Mn2+呈現一寬廣之紅光放射峰,ZnGd4Si3O13: Tb3+則在波長490, 544, 585和621nm的位置產生數個狹窄的放射峰。透過將Tb3+摻雜於ZnGd4Si3O13: Mn2+中可利用Tb3+→Mn2+的偶極-偶極能量轉移機制對其放光強度造成100%的提升。另一方面,將Mn2+摻雜於ZnGd4Si3O13: Tb3+時則因能量轉移導致Tb3+之放光強度隨Mn2+之摻雜濃度下降。此外在電子束之激發下,ZnGd4Si3O13: Tb3+, Mn2+亦呈現顯著之放光現象,顯示其應用於陰極發光的潛力。 為了調整螢光粉體之有效激發波段,論文第四章選用Sr2Si5N8材料作為主體,利用鋱離子作為活化中心,透過反應溫度之調整控制粉體之放光特性。於較低溫度下合成之Sr2-xTbxSi5N8粉體呈現標準之Tb3+窄峰放光光譜。當溫度提升後,粉體之放光光譜則出現另一寬廣之紅光放射峰。與只能被紫外光激發的Tb3+窄峰不同,該紅光放射峰可在藍光激發下產生,顯示粉體可被用作為白光LED中之紅光螢光粉。另一方面,粉體在深紫外光激發後出現明顯的長餘輝特性,顯示該粉體亦可用作為蓄光材料。 於論文的第五章中,為了改善傳統固相法反應法製備Sr2Si5N8之缺點,利用新型化學氣相沉積(chemical vapor deposition, CVD)法製備Sr2Si5N8: Ce3+黃光螢光粉。透過CVD法反應性均勻之優點,大幅提升粉體之結晶性、粒徑分布均勻性以及發光亮度。在藍光激發下,Sr2Si5N8: Ce3+呈現一黃光放射峰,隨著Ce3+的濃度提高,粉體之放射峰由535 nm紅位移至556 nm,這是由於短波長放光的再吸收以及晶場強度的增加所致。 於論文的第六章中,結合能量轉移與CVD法之優點,製備光色可調之Sr2Si5N8: Ce3+, Eu2+螢光粉。在藍光激發下,Sr2Si5N8: Eu2+呈現一紅光放射峰,透過將Ce3+摻雜於Sr2Si5N8: Eu2+中可利用Ce3+→Eu2+的偶極-偶極能量轉移機制對其放光強度造成10%的提升。另一方面,將Eu2+摻雜於Sr2Si5N8: Ce3+時則因能量轉移導致Ce3+之放光強度隨Eu2+之摻雜濃度下降,此外放光亦從黃光移至紅光。在最後透過將粉體與藍光LED晶片進行封裝,成功製備出具備純白光色與高演色性之白光LED。 論文中製備出一系列的矽氧化物與矽氮化物螢光材料,並開發出一具備潛力之新型矽氮化物粉體製程,將合成出之新型螢光粉體與藍光LED晶片進行結合,製備出具備高演色性之白光LED,突破現有白光LED遭遇之困境。 | zh_TW |
dc.description.abstract | To solve the drawbacks including high correlated color temperatures (CCTs) and low color-rendering index (CRI) values of conventional white light-emitting diodes (WLEDs), this thesis developed a series of silicate and nitridosilicate phosphors. The excitation and emission spectra of phosphors were controlled via the energy transfer process between luminescence centers. The crystallinity, particle size distribution, and brightness of phosphors were improved via a new synthesis process. Through the combination of the present phosphors with blue LED chips, WLEDs with high CRI values were fabricated.
ZnGd4Si3O13: Tb3+, Mn2+ silicate phosphors were synthesized in the first section of the thesis (Chapter 3). Under UV excitation, ZnGd4Si3O13: Mn2+ phosphors presented a red emission band, while ZnGd4Si3O13: Tb3+ showed several emission lines at 490, 544, 585 and 621 nm. The co-doping of Tb3+ ions into ZnGd4Si3O13: Mn2+ resulted in a 100% enhancement of the photoluminescence intensity for Mn2+ ions through a dipole-dipole energy transfer mechanism. On the other hand, the energy transfer process led to a decrease in Tb3+ emission as co-doping Mn2+ ions into ZnGd4Si3O13: Tb3+. In addition, obvious emission properties under the electron-beam excitation indicated the potential of the present phosphors for cathodoluminescence application. In Chapter 4, for tuning the excitation wavelengths of phosphors, Sr2Si5N8 was selected as the host material for phosphors, and terbium ions were selected as the activators. The emission properties of phosphors were controlled through the variation of annealing temperatures. Sr2-xTbxSi5N8 prepared at low temperatures exhibited several narrow emission lines attributed to Tb3+ ions. When the heating temperatures were increased, another broad emission band in the red region was observed. The excitation spectra of the red emission band covered a wide region in the range from UVC to blue light, indicating the suitability of the present phosphors as the red phosphors for improving the color-rendering index of WLEDs. In addition, Sr2-xTbxSi5N8 phosphors exhibited long afterglow properties after UVC excitation. These results support that the present phosphors are also potential for the application in persistent luminescence devices. To solve the drawbacks of the conventional solid-state reaction method, the chemical vapor deposition (CVD) process was developed to synthesize Sr2Si5N8: Ce3+ yellow phosphors in Chapter 5. The phosphors prepared via the CVD process showed higher crystallinity, more uniform particle size distribution, and better luminescence properties. Upon the blue light excitation, Sr2-xCexSi5N8 phosphors exhibited a broad yellow band owing to the 5d→4f transition of Ce3+ ions. A red shift of the emission band from 535 to 556 nm was observed with the increment in the doping amount of Ce3+ ions. In Chapter 6, the advantages of energy transfer and CVD method were combined to prepare Sr2Si5N8: Ce3+, Eu2+ phosphors with color-tunability. As the concentration of Ce3+ ions increased, the red emission intensity of Sr1.98-xCexEu0.02Si5N8 phosphors increased 10% due to the enhanced absorption and a dipole-dipole energy transfer from Ce3+ ions to Eu2+ ions. On the other hand, the energy transfer process led to a decrease in the yellow emission intensity of Sr1.94-yCe0.06EuySi5N8 phosphors with the doping of Eu2+ ions, and a shift of the emitting color from yellow to red. Finally, WLEDs with pure white CCT and high CRI values were successfully developed through the combination of blue LED chips with Sr1.98-xCexEu0.02Si5N8 phosphors. In this thesis, a series of silicate and nitridosilicate phosphors and a potential synthesis process for nitridosilicate phosphors were developed. Through the combination of the present phosphors with blue LED chips, WLEDs with high CRI values were fabricated to overcome the drawbacks of conventional approach. | en |
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dc.description.tableofcontents | 摘要
Abstract Contents....................................................I List of Tables..............................................V List of Figures............................................VI Chapter 1 Introduction 1.1 Preface.................................................1 1.2 Luminescence materials..................................2 1.3 Luminescence theory.....................................3 1.3.1 Mechanism of Luminescence................................................3 1.3.2 Radiative and nonradiative transitions.................................................5 1.3.3 Thermal quenching effect......................................................6 1.3.4 Theory and mechanism of energy transfer...............7 1.3.5 Concentration quenching effect........................9 1.3.6 Trivalent lanthanide ions............................10 1.3.7 Luminescence characteristics of Mn2+, Tb3+, Ce3+ and Eu2+ ions..................................................11 1.4 Application of phosphors...............................15 1.5 Back ground of white light emitting diodes (WLEDs).....16 1.6 Drawbacks of white light emitting diodes...............16 1.7 Research objective.....................................19 Chapter 2 Experimental 2.1 Preparation of the phosphors...........................39 2.1.1 Zn1-xMnxGd4-yTbySi3O13 phosphors.....................39 2.1.1 Sr2-xTbxSi5N8 phosphors..............................39 2.1.1 Sr2-xCexSi5N8 phosphors..............................40 2.1.1 Sr2-x-yCexEuySi5N8 phosphors.........................41 2.2 Measurement Procedures.................................42 2.2.1 Structural characterization..........................42 2.2.2 Luminescence analysis................................42 2.2.3 Fabrication and characterization of WLED.............43 Chapter 3 Photoluminescence and cathodoluminescence properties of green-red emitting ZnGd4Si3O13: Tb3+, Mn2+ phosphors 3.1 Introduction...........................................51 3.2 Results and Discussions................................53 3.2.1 Structural refinement of ZnGd4Si3O13: Tb3+, Mn2+ phosphors..................................................53 3.2.2 Photoluminescence properties of ZnGd4Si3O13:Tb3+, Mn2+ phosphors..................................................55 3.2.3 Cathodoluminescence of Zn1-xMnxGd4-yTbySi3O13 phosphors..................................................61 3.3 Conclusions............................................63 Chapter 4 Synthesis and luminescence properties of terbium ions-activated Sr2Si5N8 phosphors with long afterglow 4.1 Introduction...........................................78 4.2 Results and Discussions................................81 4.2.1 Structure and luminescence properties of Sr1.94Tb0.06Si5N8 phosphors synthesized at various temperatures...............................................81 4.2.2 Photoluminescence properties of Sr2-xTbxSi5N8 phosphors and electroluminescence properties of phosphors-converted LEDs.......................................................86 4.2.3 Persistent luminescence properties of Sr2-xTbxSi5N8 phosphors..................................................88 4.3 Conclusions............................................90 Chapter 5 Synthesis of Sr2Si5N8: Ce3+ phosphors for white LEDs via efficient chemical vapor deposition 5.1 Introduction..........................................105 5.2 Results and Discussions...............................108 5.2.1 Phase identification and structure of Ce3+-doped Sr2Si5N8..................................................108 5.2.2 Comparison of crystal structures, morphology and luminescent properties between Ce3+-doped Sr2Si5N8 synthesized via the CVD and solid-state reaction processes.................................................110 5.2.3 Photoluminescence characteristics of Ce3+-doped Sr2Si5N8 host.............................................114 5.2.4 Quantum efficiency and thermal stability of Ce3+-doped Sr2Si5N8 host.............................................118 5.2.5 Electroluminescence properties of phosphors-converted white LEDs................................................120 5.3 Conclusions...............................................121 Chapter 6 Synthesis and characterization of color-tunable Sr2Si5N8: Ce3+, Eu2+ phosphors via the chemical vapor deposition process 6.1 Introduction..........................................136 6.2 Results and Discussions...............................138 6.2.1 Phase identification, morphology and luminescence characterization: comparison between the CVD and solid-state reaction processes........................................138 6.2.2 Photoluminescence characteristics and energy transfer mechanism of Sr2Si5N8: Ce3+, Eu2+ phosphors...............141 6.2.3 Quantum efficiency, thermal stability, and electroluminescence properties of Sr2Si5N8:Ce3+, Eu2+ phosphors.................................................148 6.3 Conclusions...........................................152 Chapter 7 Conclusions.....................................164 References................................................173 List of Tables Table 3.1 Crystal structural data and lattice parameters of Zn0.96Mn0.04Gd4Si3O13 and Zn0.96Mn0.04Gd3TbSi3O13..........65 Table 3.2 CIE chromaticity coordinates converted from the photoluminescence and cathodoluminescence spectra of Zn1-xMnxGd3TbSi3O13 phosphors..............................66 Table 4.1 Crystal structural data and lattice parameters of Sr1.94Tb0.06Si5N8 synthesized at 1600oC....................92 Table 4.2 Full set of 15 CRI and Ra values for 460 nm blue chip with Sr1.94Tb0.06Si5N8 phosphors......................93 Table 5.1 Crystal structural data and lattice parameters of Sr1.91Ce0.06Si5N8 synthesized via the CVD process at 1600oC....................................................123 Table 5.2 Full set of 15 CRIs and Ra for 460 nm blue chip with Sr1.91Ce0.06Si5N8 phosphors..........................124 Table 6.1 Full set of 15 CRI values and Ra value for Sr1.906Ce0.06Eu0.004Si5N8 coated blue LED chip............154 Table 7.1 A comparison of the photoluminescence properties for the prepared phosphors................................171 List of Figures Figure 1.1 Schematic diagram of radiative transitions between the conduction band, the valence band, the donor (ED) and the acceptor (EA) levels in a luminescence material...................................................24 Figure 1.2 Configurational coordinate diagram....................................................25 Figure 1.3 Diagram of the energy transfer between the sensitizer and the activator...............................26 Figure 1.4 Diagram of the energy transfer mechanism for the electrostatic and exchange interactions....................27 Figure 1.5 Mechanism of concentration quenching effect.....................................................28 Figure 1.6 Energy levels of 4fn configurations of the trivalent lanthanide ions..................................29 Figure 1.7 Energy levels of the d5 configuration as a function of the octahedral crystal field...................30 Figure 1.8 Absorption spectrum of MnF2.....................31 Figure 1.9 Emission and excitation spectra of Tb3+ ions....32 Figure 1.10 Simplified energy level scheme of Ce3+ ions…….........................…… 33 Figure 1.11 Simplified energy level scheme of Eu2+ ions....33 Figure 1.12 Applications of phosphors upon various excitation sources....................................................35 Figure 1.13 Simple schematic diagram of WLED...............36 Figure 1.14 Four methods to fabricate WLEDs................37 Figure 1.15 Main outline of this thesis....................38 Figure 2.1 Synthesis procedures of Zn1-xMnxGd4-yTbySi3O13 phosphors via the solid-state reaction process.............45 Figure 2.2 Synthesis procedures of Sr2-xTbxSi5O8 phosphors via the solid-state reaction process.......................46 Figure 2.3 Synthesis procedures of Sr2-1.5xCexSi5O8 phosphors via the CVD process........................................47 Figure 2.4 Schematic diagrams for forming Sr2-1.5xCexSi5N8 phosphors via the (a) CVD and (b) solid-state reaction processes..................................................48 Figure 2.5 Synthesis procedures of Sr2-1.5xCexSi5O8 phosphors via the solid-state reaction process.......................49 Figure 2.6 Synthesis procedures of Sr2-1.5x-yCexEuySi5O8 phosphors via the CVD process..............................50 Figure 3.1 Refinement pattern of observed (×) and calculated (solid line) X-ray diffraction patterns, difference profile (dot line), and positions of all the reflections (vertical bars) for Zn0.96Mn0.04Gd4Si3O13. Inset: structural representation of Zn0.96Mn0.04Gd4Si3O13....................67 Figure 3.2 Refinement pattern of observed (×) and calculated (solid line) X-ray diffraction patterns, difference profile (dot line), and positions of all the reflections (vertical bars) for Zn0.96Mn0.04Gd3TbSi3O13. Inset: variation of crystal parameters for Zn0.96Mn0.04Gd4-yTbySi3O13 with the concentration of Tb3+ (y)..................................68 Figure 3.3 Photoluminescence excitation spectra of Zn0.96Mn0.04Gd4-yTbySi3O13 (y=0.0-4.0) phosphors monitored at 611 nm of Mn2+ emission. Inset: dependence of relative Mn2+ emission intensity on Tb3+ concentration...................69 Figure 3.4 Photoluminescence emission spectra of Zn0.96Mn0.04Gd4-yTbySi3O13 (y=0.0-4.0) phosphors under the main excitation of Zn0.96Mn0.04Gd4Si3O13 at 278 nm. Upper inset: deconvoluted emission spectra of Zn0.96Mn0.04Gd4Si3O13. Lower inset: the relation between the concentration of Tb3+ ions and the emission intensity of Tb3+ ions as well as Mn2+ ions..................................70 Figure 3.5 Photoluminescence excitation spectra of Zn1-xMnxGd3TbSi3O13 (x=0.02-0.08) phosphors monitored at 611 nm of Mn2+ emission. Inset: dependence of relative Mn2+ emission intensity on Mn2+ concentration...................71 Figure 3.6 Photoluminescence emission spectra of Zn1-xMnxGd3TbSi3O13 (x=0.02-0.08) phosphors under the excitation at 240 nm. Inset: dependence of the energy transfer efficiency (η) on Mn2+ concentration.............72 Figure 3.7 Energy level diagram of Tb3+ ions and Mn2+ ions.......................................................73 Figure 3.8 Log plot for the emission intensity of Tb3+ ions as a function of Mn2+ concentration in Zn1-xMnxGd3TbSi3O13 (x=0.02-0.08)..............................................74 Figure 3.9 CIE chromaticity coordinates converted from the photoluminescence spectra of Zn1-xMnxGd3TbSi3O13 (x=0.02-0.08) phosphors....................................75 Figure 3.10 cathodoluminescence spectra of Zn1-xMnxGd3TbSi3O13 (x=0.02-0.08) phosphors under an electron beam at a voltage of 10 kV.................................76 Figure 3.11 CIE chromaticity coordinates converted from the cathodoluminescence spectra of Zn1-xMnxGd3TbSi3O13 (x=0.02-0.08) phosphors....................................77 Figure 4.1 X-ray diffraction patterns of Sr1.94Tb0.06Si5N8 phosphors prepared at (a) 1300oC, (b) 1400oC, (c) 1500oC and (d) 1600oC.................................................94 Figure 4.2 Refinement pattern of observed (×) and calculated (solid line) X-ray diffraction patterns, difference profile (dot line), and positions of all the reflections (vertical bars) for Sr1.94Tb0.06Si5N8. Inset: crystal structure of Sr1.94Tb0.06Si5N8..........................................95 Figure 4.3 Emission spectra of Sr1.94Tb0.06Si5N8 phosphors synthesized at different temperatures ranging from 1300oC to 1600oC upon UVC excitation at 276 nm. Inset: excitation spectra monitored at the green emission of 544 nm..........96 Figure 4.4 Emission spectra of Sr1.94Tb0.06Si5N8 phosphors synthesized at 1500oC and 1600oC upon blue excitation at 420 nm. Inset: excitation spectra monitored at the red emission of 602 nm for the phosphor synthesized at 1600oC...........97 Figure 4.5 XPS spectra of Sr1.94Tb0.06Si5N8 synthesized at different temperatures ranging from 1300oC to 1600oC.......98 Figure 4.6 Excitation spectra of Sr2-xTbxSi5N8 (x = 0.02-0.10) phosphors monitored at the emission of 602 nm.........................................................99 Figure 4.7 Emission spectra of Sr2-xTbxSi5N8 (x = 0.02-0.10) phosphors under the excitation at 420 nm. Inset: relation between concentration of terbium ions and relative emission intensity of Sr2-xTbxSi5N8................................100 Figure 4.8 EL spectra of 460 nm blue LED chip and Sr1.94Tb0.06Si5N8 coated blue LED chip. Inset: the corresponding CIE chromaticity coordinates of packaged LEDs. Photos: the images of packaged LEDs driven via a current of 280 mA....................................................101 Figure 4.9 Photoluminescence decay curves of Sr1.94Tb0.06Si5N8 monitored at the emission of 602 nm after the excitation at various wavelengths ranging from 255 to 420 nm for 5 min. Inset: variation of the afterglow intensity for Sr1.94Tb0.06Si5N8 with the excitation wavelengths after closing the excitation shutter for 4 sec..................102 Figure 4.10 Photoluminescence decay curves of Sr2-xTbxSi5N8 (x = 0.02-0.10) phosphors monitored at 602 nm emission band after the excitation at 276 nm. Inset: dependence of τav on the concentration of terbium ions.........................103 Figure 4.11 Afterglow spectra of Sr1.94Tb0.06Si5N8 after closing the excitation shutter from 3 to 30 sec. Upper inset: a comparison of the fluorescence and afterglow spectra for Sr1.94Tb0.06Si5N8. Lower inset: energy level diagram of Sr2-xTbxSi5N8 phosphors...................................104 Figure 5.1 XRD patterns of Sr1.91Ce0.06Si5N8 phosphors synthesized via the CVD process at (a) 1400 oC, (b) 1500 oC, and (d) 1600 oC...........................................125 Figure 5.2 (a) Refinement pattern of observed (×) and calculated (solid line) X-ray diffraction patterns, difference profile (dot line), and positions of all the reflections (vertical bars) for Sr1.91Ce0.06Si5N8 phosphors prepared via the CVD process at 1600oC. Inset: SAED pattern of Sr1.91Ce0.06Si5N8 phosphors. (b) Structural representation and (c) coordination environment of Sr2+ sites for Sr1.91Ce0.06Si5N8 phosphors...............................126 Figure 5.3 Variation of (113) XRD diffraction peak with the concentration of Ce3+ ions in Sr2-1.5xCexSi5N8 phosphors.................................................127 Figure 5.4 (a) A comparison for XRD patterns of Sr1.91Ce0.06Si5N8 phosphors synthesized via CVD and solid-state reaction processes at 1600oC. Scanning electron micrographs of Sr1.91Ce0.06Si5N8 phosphors prepared via the (b) CVD and (c) solid-state reaction processes............128 Figure 5.5 A comparison for particle size distribution of Sr1.91Ce0.06Si5N8 phosphors synthesized via the CVD and solid-state reaction processes at 1600oC..................129 Figure 5.6 Reaction mechanism of the formation for Sr2-1.5xCexSi5N8 phosphors via the (a) CVD and (b) solid-state reaction processes............................130 Figure 5.7 (a) Photoluminescence emission spectra and (b) excitation spectra of Sr1.91Ce0.06Si5N8 phosphors prepared via the CVD and solid-state reaction processes at 1600oC....................................................131 Figure 5.8 (a) Deconvoluted emission spectra of Sr1.91Ce0.06Si5N8, (b) emission spectra of Sr2-1.5xCexSi5N8 (x=0.02-0.10) phosphors synthesized via the CVD process at 1600oC, and variation of the (c) emission intensity, peak wavelength, and (d) Stokes shift with the concentration of Ce3+ ions in Sr2-1.5xCexSi5N8.............................132 Figure 5.9 Luminescence spectra of BaSO4 powders and Sr1.91Ce0.06Si5N8 phosphors collected from an integrating sphere under excitation at 460 nm.........................133 Figure 5.10 Photoluminescence intensity for Sr1.91Ce0.06Si5N8 phosphors as a function of temperatures. Inset: plot of ln[(I0/IT)- 1] vs 1/kT for the phosphors..................134 Figure 5.11 EL spectra of uncoated and Sr1.91Ce0.06Si5N8 coated 460 nm blue LED chips. Photos: the image of packaged LED chip driven via a current of 280 mA...................135 Figure 6.1 X-ray diffraction patterns of Sr1.98Eu0.02Si5N8 prepared via the (a) CVD and (b) solid-state reaction processes. Inset: scanning electron micrographs of phosphors.................................................155 Figure 6.2 Photoluminescence (a) excitation and (b) emission spectra of Sr1.98Eu0.002Si5N8 prepared via the CVD and solid-state reaction processes............................156 Figure 6.3 Excitation and emission spectra of (a) Sr1.91Ce0.06Si5N8 and (b) Sr1.98Eu0.02Si5N8. (c) Spectral overlap between the excitation spectrum of Sr1.98Eu0.02Si5N8 and the emission spectrum of Sr1.91Ce0.06Si5N8............157 Figure 6.4 (a) Diffuse reflection spectra of Sr1.91Ce0.06Si5N8 and Sr1.98Eu0.02Si5N8 phosphors. (b) Diffuse reflection, (c) PL excitation, and (d) PL emission spectra of Sr1.98-1.5xCexEu0.02Si5N8 phosphors............158 Figure 6.5 (a) Photoluminescence excitation and (b) emission spectra of Sr1.91-yCe0.06EuySi5N8 phosphors. (c) Corresponding CIE coordinates of Sr1.91-yCe0.06EuySi5N8 phosphors with (i) y=0, (ii) y=0.002, (iii) y=0.004, (iv) y=0.006, (v) y=0.008, (vi) y=0.010 and (vii) y=0.020. (d) Dependence of the energy transfer efficiency (η) on the concentration of Eu2+ ions for Sr1.91-yCe0.06EuySi5N8 phosphors.................................................159 Figure 6.6 Dependence of (Iso/Is) for Ce3+ ions on (a) C6/3, (b) C8/3, and (c) C10/3...................................160 Figure 6.7 Luminescence spectra of BaSO4 powders and Sr1.906Ce0.06Eu0.04Si5N8 phosphors collected from an integrating sphere under the excitation at 460 nm.........161 Figure 6.8 Variation of (a) photoluminescence emission spectrum, (b) emission intensity, (c) FWHM of emission band, and (d) corresponding CIE coordinate of Sr1.906Ce0.06Eu0.04Si5N8 with testing temperatures........162 Figure 6.9 Electroluminescence spectra of 460 nm blue LED chip and Sr1.906Ce0.06Eu0.04Si5N8 coated blue LED chip. Inset: the image of packaged WLED lamp driven at a current of 280 mA....................................................163 | |
dc.language.iso | en | |
dc.title | 新穎矽氧化物與矽氮化物螢光材料之製備、結構解析與發光特性 | zh_TW |
dc.title | Synthesis, Structural Characterization and Luminescence Properties of New Silicate and Nitridosilicate Phosphors | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 吳嘉文,徐振哲,邱德威,林舜天 | |
dc.subject.keyword | 矽氧化物,矽氮化物,螢光材料, | zh_TW |
dc.subject.keyword | silicate,nitridosilicate,phosphor, | en |
dc.relation.page | 181 | |
dc.identifier.doi | 10.6342/NTU201701126 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2017-06-27 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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