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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.author | Po-Yen Tseng | en |
dc.contributor.author | 曾柏諺 | zh_TW |
dc.date.accessioned | 2021-06-17T08:42:03Z | - |
dc.date.available | 2021-04-07 | |
dc.date.copyright | 2021-04-07 | |
dc.date.issued | 2021 | |
dc.date.submitted | 2021-03-05 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/74548 | - |
dc.description.abstract | 本文的主旨是利用量子井中的電子受熱激發特性來感測環境溫度,以用於溫度感測器的應用。 在第一章中,給出了溫度感測器的介紹和背景。有多種方法可以實現溫度感測器,例如基於BJT 的DTMOS 和CMOS 的電路架構。本文提出了一種採用量子井異質接面雙載子電晶體元件來實現溫度感測器的應用。 在第二章中,我們將介紹為什麼將量子井異質接面雙載子電晶體用於溫度感測器。我們會討論三種電晶體,包括雙極性接面電晶體、異質雙載子電晶體和量子井異質接面雙載子電晶體的電流增益,我們會介紹其物理原理,推導其中電流增益的公式,並介紹三種不同磊晶的晶圓。 在第三章中,我們將介紹如何在無塵室中完成元件和電路的製程,並解釋製程步驟。此外,異質雙載子電晶體的直流測量結果和量子井異質接面雙載子電晶體中不同數量的量子井在不同溫度下的特性。並整理出對於不同尺寸,不同晶圓和不同溫度的比較表,用於展示元件的電流增益。 在第四章中,我們提出四個關於溫度感測器的電路。在模擬中,我們可以看到與單顆元件相比,電路的電流增益的提升。並且電路在25℃和85℃下,有著電流增益的提升。可以測過模擬與量測觀察到量子井異質接面雙載子電晶體的輻射複合特性。通過將我們的量子井異質接面雙載子電晶體元件和電路與類比數位轉換器相結合,完成一個溫度感測器的系統。 | zh_TW |
dc.description.abstract | The main idea of this thesis is using the thermionic emission characteristics of quantum wells (QW) to sense ambient temperature for thermal sensor applications. The first chapter gives an introduction and background of thermal sensors. There are several commonly used designs using as bipolar junction transistors (BJT), DTMOS or CMOS for thermal sensors. In this thesis, I propose a thermal sensor device using quantum well heterojunction bipolar transistors (QWHBT). In the second chapter, I will introduce why I use QWHBTs for the thermal sensor device. The current gain β is calculated and compared for BJT, HBT and QWHBT devices. The operating principles will be discussed, and I will introduce three wafers, one with standard HBTs, one with one-QW QWHBTs and one with three-QW QWHBTs and demonstrate their characteristics in the following chapter. In the third chapter, I will explain the fabrication process of the devices. The DC measurement results of an HBT and different number of QW in QWHBT are shown as the temperature rise. There is a comparison table for the current gain of each device in different sizes, different wafers and at different temperatures. In the fourth chapter, I compare four different circuits for the thermal sensor application. In the simulation results, I demonstrate the current gain enhancement of the circuits compared to single devices. The radiative recombination characteristics in QWHBT devices are compared at 25℃ and 85℃. By combining our QWHBT components and circuits with analog-to-digital converters (ADC), a temperature sensor system is completed. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T08:42:03Z (GMT). No. of bitstreams: 1 U0001-0203202101045800.pdf: 3404259 bytes, checksum: 7a044e055851d378b6cd274cadb8fa8c (MD5) Previous issue date: 2021 | en |
dc.description.tableofcontents | 口試委員會審定書 # 誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vi LIST OF TABLES xii Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Introduction of QWHBT 7 1.3 Overview 9 Chapter 2 Principles of QWHBT for Thermal Sensor Application 11 2.1 Introduction of QWHBT 11 2.1.1 Bipolar Junction Transistors 11 2.1.2 Heterojunction Bipolar Transistors 13 2.1.3 Quantum-Well Heterojunction Bipolar Transistors 14 2.2 Basic Physics Principles 17 2.3 Layer Structures 20 Chapter 3 The Effect of QW Numbers at Different Temperatures 23 3.1 Motivation 23 3.2 Fabrication Process Flow 24 3.3 Measurement Result of Single Device at Different Temperatures and Wafers 33 3.3.1 DC Results of HBT device 34 3.3.2 DC Results of one-QW QWHBT device 39 3.3.3 DC Results of three-QW QWHBT device 44 3.4 Summary 49 Chapter 4 Thermal Sensor Circuits Based on QWHBT Device 51 4.1 Motivation 51 4.2 Design of a Modified Widlar Current Source Circuit 52 4.2.1 Simulation Results of a Modified Widlar Current Source Circuit 53 4.2.2 Measurement Results of a Modified Widlar Current Source Circuit 59 4.3 Design of a Darlington Pair Circuit 61 4.3.1 Simulation Results of a Darlington Pair Circuit 63 4.3.2 Measurement Results of a Darlington Pair Circuit 66 4.4 Design of a Standard Current Mirror Circuit 68 4.4.1 Simulation Results of a Standard Current Mirror Circuit 69 4.5 Design of a Widlar Current Source Circuit 72 4.5.1 Simulation Results of a Widlar Current Source Circuit 74 4.6 Future work (ADC) 78 4.7 Summary 84 Chapter 5 Conclusion 85 REFERENCE 86 APPENDIX 88 | |
dc.language.iso | zh-TW | |
dc.title | 磷化銦鎵/砷化鎵量子井異質接面雙載子電晶體之溫度感測器應用 | zh_TW |
dc.title | InGaP/GaAs Quantum Well Heterojunction Bipolar Transistor for Thermal Sensor Application | en |
dc.type | Thesis | |
dc.date.schoolyear | 109-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 楊家驤(Jia-Xiang Yang),劉宗德(Zong-De Liu) | |
dc.subject.keyword | 溫度感測器,量子井,量子井異質接面雙載子電晶體,電流-電壓曲線, | zh_TW |
dc.subject.keyword | thermal sensor,quantum well,QWHBT,family curve characterisstic, | en |
dc.relation.page | 91 | |
dc.identifier.doi | 10.6342/NTU202100765 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2021-03-05 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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