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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 藍崇文(Chung-Wen Lan) | |
dc.contributor.author | Han-Lin Yang | en |
dc.contributor.author | 楊翰霖 | zh_TW |
dc.date.accessioned | 2021-06-17T08:15:02Z | - |
dc.date.available | 2024-08-18 | |
dc.date.copyright | 2019-08-18 | |
dc.date.issued | 2019 | |
dc.date.submitted | 2019-08-14 | |
dc.identifier.citation | [1] Global Marker Outlook 2016-2020, SolarPower Europe(EPIA) (2016).
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Schönecker, Impact of the crystal structure on solar cell parameters of Ribbon Growth on Substrate (RGS) solar cells. 23rd European Photovoltaic Solar Energy Conference (2008) 1522-1526. [34] B. Kudo, Improvements in the horizontal ribbon growth technique for single crystal silicon, J. Cryst, Growth 50 (1980) 247-259. [35] J. P. Kalejs, Modeling contributions in commercialization of silicon ribbon growth from the melt, J. Cryst. Growth 230 (2001) 10-21. [36] A. Schönecker, L. Laas, A. Gutjahr, M. Goris, P. Wyers, Ribbon-Growth-on-Substrate: status, challenges and promises of high speed silicon wafer manufacturing, 12th NREL Workshop (2002) 7-14. [37] R. G. Seidensticker, R. H. Hopkins, Silicon ribbon growth by the dendritic web process, J. Cryst. Growth 50 (1980) 221-235. [38] G. Hahn, P. Geiger, Record efficiencies for EFG and string ribbon solar cells, Prog. Photovolt. Res. Appl. 11 (2003) 341-346. [39] H. Lange, I. A. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/73961 | - |
dc.description.abstract | 隨著石化能源耗竭與全球暖化問題日趨嚴重,使用可再生能源日益重要,而 太陽光電因為發電便利與分散優勢,在各國政府的補助下過去十年成長高過百倍 之譜,設置成本也大幅下降。特別是矽晶太陽能電池,已達到$0.33/Wp以下的成 本,但其主要成本仍在於矽晶片的製造。儘管多晶矽的價格已跌落近$20/Kg,然而晶片製造仍需長晶與切片,使得晶片成本很難進一步下降。特別是切片成本目 前已經高於長晶成本非常多,一般多在$0.1/Wp以上,況且切割損失更高達40%以上。由此可見,目前的晶片製造的產業技術是相當沒有效率且高成本的方式。因此,無切割技術 (kerf-free)的晶片製造,尤其是沾鑄,一直是長晶技術很重視的一個領域,但晶片品質多半不如預期,主要就是晶片缺陷高,電池轉換效率不高。
在此論文裡,我們利用自行製作氮化矽(Si3N4)基板,控制在沾鑄過程中基板與矽融湯的潤濕性質,並使用可觀測的高溫爐,觀察在不同潤濕與控壓條件下,基板對熔融矽接觸過程,並將沾鑄之晶片做晶體評價,包括晶粒、晶向、與晶界的種類,少數載壽命等性質,探討基板與融湯溫度、接觸時間、基板移動方式對成核與晶片缺陷的影響,並改善製程參數,來提升晶片的品質。 | zh_TW |
dc.description.abstract | With the shortage of fossil energy and global warming, the urgency of using renewal energy has driven the growth of photovoltaic (PV) industry very rapidly. The global annual installation has been grown over 100 times since 2000 and the annual installation in 2014 was expected to be over 40 GWp. With this rapid development, the silicon solar cell still remains the main stream in the market, and its production cost is lower than 33 cents/Wp. Nevertheless, the silicon wafer is still the major cost. More importantly, the slicing (about 10 cents/Wp) is much more costly than ingot growth, and the silicon kerf loss is over 40 %. Therefore, to further reduce the wafer cost, the development of kerf-free wafer technology is necessary. In fact, the kerf-free technology, such as dip casting, is not new. However, the wafer quality is still not good enough to compete with that from ingot growth due to the defect formation during crystal growth.
In this research, we designed Si3N4 plates as a substrate, so that the wettability of the silicon melt could be controlled. An in-situ infrared rapid thermal furnace will be used to observe the effect of pressure and substrate on the shape of molten silicon on different substrate, so the thickness of the grown silicon can be controlled. Also, the wafer grain structures, such as the grain structure, grain size, grain orientation, and grain boundary evolution, will be investigated. The distribution of the thermal stress and dislocation, as well as the minority carrier lifetime can be measured. We will also modify and improve the process to achieve a better wafer quality by understanding the effect of the substratea temperature, casting speed, and cooling time. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T08:15:02Z (GMT). No. of bitstreams: 1 ntu-108-R06524069-1.pdf: 4812417 bytes, checksum: 6f4bf99d1b3bd1e2e52c5c8fd2862cbc (MD5) Previous issue date: 2019 | en |
dc.description.tableofcontents | 目錄
致謝 I 中文摘要 II Abstract III 目錄 IV 圖目錄 VI 表目錄 ………….VIII 第一章 緒論 1 1-1 研究背景 …..1 1-2 研究目的 3 第二章 文獻回顧 4 2-1無切割長晶技術的發展 4 2-2各生長方式的差異與課題 9 2-3未來發展趨勢 12 第三章 實驗方法及實驗器材 15 3-1實驗藥品 15 3-1-1沾鑄基板準備與矽融湯填料使用藥品 15 3-2實驗設備與器材 17 3-2-1直鑄晶片高溫爐 17 3-2-2沾鑄基板前處理設備 18 3-2-3量測設備 20 3-3實驗準備 23 3-4實驗設計 25 第四章 研究結果與討論 29 4-1表面形貌比較 29 4-1-1基板斜率的差異 29 4-1-2融湯溫度之影響 31 4-1-3基板離開融湯時路徑斜率之影響 32 4-2各實驗生長速度比較 35 4-3阻值分析 36 4-4少數載子壽命分析 38 4-5晶粒生長及晶向分析 40 4-6晶界種類分析 47 第五章 結論 48 參考文獻 50 | |
dc.language.iso | zh-TW | |
dc.title | 太陽能沾鑄矽晶片之研究 | zh_TW |
dc.title | A Study of Crystallization on Dipped Substrate Wafer Technology for Crystalline Silicon Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 王丞浩(Chen-Hao Wang),廖英志(Ying-Chih Liao) | |
dc.subject.keyword | 無切割晶片技術,晶片鑄造,沾鑄,晶片評價, | zh_TW |
dc.subject.keyword | kerf-less wafer technology,wafer casting,dip casting, | en |
dc.relation.page | 52 | |
dc.identifier.doi | 10.6342/NTU201903655 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2019-08-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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