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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 盧信嘉(Hsin-Chia Lu) | |
| dc.contributor.author | Yin-Lin Liu | en |
| dc.contributor.author | 劉穎霖 | zh_TW |
| dc.date.accessioned | 2021-06-17T06:26:31Z | - |
| dc.date.available | 2018-08-21 | |
| dc.date.copyright | 2018-08-21 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-08-17 | |
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Hua, 'A four-port microwave phase detector at X-band based on MEMS power sensors,' IEEE Sensors Journal, vol. 17, no. 7, pp. 2029-2035, Apr. 2017 [12] J. Choi, J. Lee, Y. Xi, S. S. Myoung, S. Baek, D. H. Kwon, Q. D. Bui, J. Lee, D. Oh, and T. B. Cho, 'Wide dynamic-range CMOS RMS power detector,' IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 3, pp. 868-880, Mar. 2016. [13] Available: http://www.phys.hawaii.edu/~anita/new/papers/militaryHandbook/rcvr_sen.pdf [14] J. Gorisse, A. Cathelin, A. Kaiser, and E. Kerherve, 'A 60GHz CMOS RMS power detector for antenna impedance mismatch detection,' in 2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference, Jun. 2008, pp. 93-96. [15] E. Ozeren, I. Kalyoncu, B. Ustundag, B. Cetindogan, H. Kayahan, M. Kaynak, and Y. Gurbuz, 'A high dynamic range power detector at X-band,' IEEE Microwave and Wireless Components Letters, vol. 26, no. 9, pp. 708-710, Sept. 2016. [16] S. Rami, W. 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K, 'Broadband root-mean-square detector in CMOS for on-chip measurements of millimeter-wave voltages,' IEEE Electron Device Letters, vol. 33, no. 6, pp. 752-754, Jun. 2012. [22] B. Moret, E. Kerherve, and V. Knopik, 'Non-invasive highly integrated transformer power detector for self-healing PA in 130nm H9SOI-FEM CMOS technology,' in 2016 11th European Microwave Integrated Circuits Conference (EuMIC), Oct. 2016, pp. 113-116. [23] K. Kim and Y. Kwon, 'A broadband logarithmic power detector in 0.13-μm CMOS,' IEEE Microwave and Wireless Components Letters, vol. 23, no. 9, pp. 498-500, Sept. 2013 [24] D. M. Pozar, 'Microwave engineering,' 3rd ed: John Wiley and Sons Inc., 2005. [25] D. Wolpert and P. Ampadu, 'Managing temperature effects in nanoscale adaptive systems,' 1st ed: Springer Science & Business Media, 2011. [26] E. Cohen, A. Nazimov, and S. Ravid, 'Accurate power detector and dual directional coupler with self-calibration in 65nm CMOS,' in 2015 10th European Microwave Integrated Circuits Conference (EuMIC), Sept. 2015, pp. 124-127. [27] B. François and P. Reynaert, 'A fully integrated transformer-coupled power detector with 5 GHz RF PA for WLAN 802.11ac in 40 nm CMOS,' IEEE Journal of Solid-State Circuits, vol. 50, no. 5, pp. 1237-1250, May 2015. [28] C. Li, F. Gong, and P. Wang, 'A low-power ultrawideband CMOS power detector with an embedded amplifier,' IEEE Transactions on Instrumentation and Measurement, vol. 59, no. 12, pp. 3270-3278, Dec. 2010 [29] Making Accurate and Reliable 4-Port On-Wafer Measurements. Available: https://www.cascademicrotech.com/files/EPDAccurate4portAN.pdf | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/72162 | - |
| dc.description.abstract | 本論文主要研究為通訊及相位陣列天線系統上所需的偵測電路，操作頻段為K與Ka頻段，應用於發射端即時功率偵測與波束成型所需的相位偵測。本論文首先回顧功率偵測器與相位偵側器等相關電路文獻，並介紹其運作原理、電路架構及應用目的。於第一個電路中，我們採用共源極功率偵測器搭配低耦合係數之堆疊變壓器式方向耦合器，降低對輸出功率的影響並採用成對的架構來降低功率偵測器對溫度的變異，實際量測可得在K頻段操作下，於輸出功率為0 dBm時最小輸出電壓為43.1 mV，於Psat為16.3 dBm時最大輸出電壓為1.205 V，從0 dBm至OP1dB操作範圍內線性度誤差小於±1 dB，直流功耗為 98 μW。於第二個電路中，使用45˚延遲傳輸線搭配低耦合係數之耦合線方向耦合器實現全相角相位可偵測的相位偵測器，實際量測可得在Ka頻段操作下，於輸入功率為3 dBm時最大輸出電壓為81.2 mV，且在0˚~360˚相位差下兩弦波形式的輸出電壓相為差100.68˚而設計理想值為90˚，經由數學計算後可得最大相位差計算誤差為 -28˚與18.8˚兩種。 | zh_TW |
| dc.description.abstract | This thesis studies detectors which operate in K-band, and Ka-band for wireless communications and phased array antenna systems.First, a K-band PA transmitted power detector using the common-source structure with a low coupling factor stacked directional coupler is presented. In order to decrease effects of temperature, the power detector is realized in pairs and one of the pair is a reference source. The measured minimum voltage is 43.1 mV at 0 dBm, and maximum voltage is 1.205V at Psat at 16.3 dBm, The linearity error from 0 dBm to Psat is under ±1 dB. The quiescent DC power is 98 μW.Second, a Ka-band 0˚ ~360˚ phase detector using 45˚ transmission line and a low coupling factor coupled line directional coupler is presented. The measured minimum voltage is 81.2 mV at 3 dBm, and phase difference between two sinusoidal output voltages is 100.68˚ where designed phase difference is 90˚, after mathematical calculation, the maximum phase error are -28˚, 18.8˚. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T06:26:31Z (GMT). No. of bitstreams: 1 ntu-107-R04943159-1.pdf: 10262144 bytes, checksum: a43c3d04bc6119802ecd98f759a5068f (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 目錄
口試委員會審定書 # 致謝 i 中文摘要 ii ABSTRACT. iii 目錄 iv 圖目錄 vii 表目錄 xi Chapter 1 簡介 1 1.1 背景與動機 1 1.2 文獻回顧 4 1.2.1 功率偵測器 4 1.2.2 相位偵測器 5 1.3 貢獻 6 1.4 各章節介紹 7 Chapter 2 功率放大器、功率偵測器及相位偵測器概論 8 2.1 介紹 8 2.2 功率放大器介紹及分類 9 2.2.1 功率放大器介紹 9 2.2.2 A類 9 2.2.3 B類 9 2.2.4 AB類 9 2.3 功率偵測器相關參數 10 2.3.1 最小可偵測功率 10 2.3.2 線性度(linearity) 10 2.3.3 敏感度(sensitivity) 11 2.3.4 動態範圍(dynamic range) 11 2.4 功率偵測器介紹與應用 12 2.4.1 RMS功率偵測器應用於天線不匹配量測[14] 12 2.4.2 高動態量測範圍功率偵測器[15] 13 2.4.3 振幅偵測器(amplitude detector) [16] 14 2.5 相位偵測器介紹 15 2.5.1 乘法式相位偵測 15 2.5.2 加法式相位偵測[8] 16 Chapter 3 發射端功率偵測電路設計 18 3.1 發射端功率偵測電路架構 18 3.1.1 功率放大器[20] 18 3.1.2 耦合器介紹 21 3.1.3 功率偵測器介紹 21 3.2 功率偵測電路設計 23 3.2.1 設計流程 23 3.2.2 發射端功率偵測器電路架構 24 3.2.3 被動電路部分 25 3.2.4 功率偵測器特性 29 3.2.5 DC degeneration 30 3.2.6 主動電路部分 34 3.3 模擬結果 38 3.3.1 電磁模擬 38 3.3.2 功率偵測器模擬結果 38 3.3.3 發射端功率偵測電路模擬結果 42 3.3.4 電路佈局 46 Chapter 4 相位偵測電路設計 48 4.1 0˚至360˚度相位差可偵測技術 48 4.2 以45˚延遲傳輸線完成0˚至360˚相位差可偵測技術 51 4.3 相位偵測電路設計 55 4.3.1 設計流程 55 4.3.2 被動電路部分 56 4.3.3 主動電路部分 59 4.4 模擬結果 61 4.4.1 電磁模擬 61 4.4.2 功率偵測器模擬結果 62 4.4.3 相位偵測器小訊號模擬結果 64 4.4.4 相位偵測器大訊號模擬結果 67 4.4.5 電路佈局 71 Chapter 5 電路量測 73 5.1 PCB設計 73 5.1.1 PCB設計 73 5.1.2 高頻PCB設計 76 5.2 量測準備 77 5.2.1 加熱針台 77 5.2.2 相移器、衰減器與功率偵測器 77 5.2.3 相位偵測器PCB組裝 82 5.2.4 自動化量測 85 5.3 K頻段發射端功率偵測電路量測數據 86 5.3.1 量測環境 86 5.3.2 S參數量測 87 5.3.3 不同環境溫度下大訊號量測 89 5.3.4 修正與討論 94 5.3.5 電路特性比較 98 5.4 Ka頻段相位偵測電路量測數據 99 5.4.1 量測環境 99 5.4.2 S參數量測 100 5.4.3 大訊號量測 106 5.4.4 修正與討論 106 5.4.5 電路特性比較 115 Chapter 6 結論與未來展望 117 REFERENCE 119 | |
| dc.language.iso | zh-TW | |
| dc.subject | 線性度誤差 | zh_TW |
| dc.subject | 功率偵測器 | zh_TW |
| dc.subject | 相位偵測器 | zh_TW |
| dc.subject | 方向耦合器 | zh_TW |
| dc.subject | 全相角 | zh_TW |
| dc.subject | 波束成型 | zh_TW |
| dc.subject | phase detector | en |
| dc.subject | directional coupler | en |
| dc.subject | 0?~360? | en |
| dc.subject | linearity error | en |
| dc.subject | power detector | en |
| dc.title | 5G通訊Ka頻段相位偵測電路及K頻段發射功率偵測電路 | zh_TW |
| dc.title | Ka-band Phase Detection Circuits for 5G Communications
and K-band Transmitted Power Detector | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林坤佑(Kun-You Lin),蔡政翰(Jeng-Han Tsai) | |
| dc.subject.keyword | 功率偵測器,相位偵測器,方向耦合器,全相角,波束成型,線性度誤差, | zh_TW |
| dc.subject.keyword | power detector,phase detector,directional coupler,0?~360?,linearity error, | en |
| dc.relation.page | 121 | |
| dc.identifier.doi | 10.6342/NTU201803716 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-08-17 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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