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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 王偉華(Wei-Hua Wang) | |
dc.contributor.author | Wei-Liang Pai | en |
dc.contributor.author | 白唯良 | zh_TW |
dc.date.accessioned | 2021-06-17T06:13:18Z | - |
dc.date.available | 2019-10-12 | |
dc.date.copyright | 2018-10-12 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-10-04 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71880 | - |
dc.description.abstract | 二維層狀半導體,例如過鍍金屬硫族化物(TMDs)、黑磷與硒化銦 (InSe),在近幾年來被密集地研究著。在二維半導體材料當中,硒化銦,由於其具有很小的有效質量 (effective mass) 與很高的載子遷移率 (carrier mobility),因此在電子元件應用上非常具有潛力。另一方面,純粹由陰陽離子構成的離子液體(ionic liquid),能使場效電晶體 (field-effect transistor) 的通道有效地達到高載子濃度。由於我們實驗室過去缺乏操作離子液體的技術,在製作與量測離子液體調控的場效電晶體時,遇到許多技術上的困難。經過我們研發後,我們開發並優化了調控離子液體閘極 (ionic liquid gating) 的技術。透過這項技術,我們得以控制並量測由離子液體調控的硒化銦場效電晶體,並研究其電性傳輸性質。相較於矽背閘極 (Si-back gate) 的硒化銦場效電晶體,我們觀察到離子液體對於硒化銦場效電晶體的電性傳輸效能的提升,離子液體閘極調控的硒化銦場效電晶體在200 K展現了超過1000 cm2/Vs的載子遷移率。在半導體與金屬的界面所形成的蕭特基位障 (Schottky barrier)可以透過離子液體閘極來調控,並且其值可以達到很低的33 meV。此外,我們還觀察到由於離子液體的相變,隨著溫度的變化的電性傳輸性質有了異常的趨勢,對於研究離子液體閘極調控的二維場效電晶體,這項發現提供了相關研究的另一方向。 | zh_TW |
dc.description.abstract | Two-dimensional (2D) layered semiconductors, such as transition metal dichalcogenides (TMDs), black phosphorus and indium selenide (InSe), have been intensively studied during these years. Among the 2D semiconducting materials, InSe exhibits great potential for electronic applications because of its small effective mass and high carrier mobility. On the other hand, ionic liquid (IL), composed of anions and cations, is an efficient gating technique to achieve high carrier concentration in the semiconducting channel of the field effect transistors (FETs). Due to lack of experience to operate IL gating in our lab, we encountered several technical issues regarding device fabrication and electronic properties measurement. After spending some efforts, we developed and optimized the IL gating technique, which allows us to measure IL-gated InSe FETs with experimental control. We observed enhanced transport properties of IL-gated InSe FETs, as compared with the Si-back-gated InSe FETs. The IL-gated InSe FETs exhibits a high field effect mobility of ~1000 cm2/Vs at 200 K. For contact behavior, the Schottky barrier height can be modulated by IL gate and a small barrier height of 33 meV is achieved. Moreover, anomalous temperature dependent transport behavior enabled by the phase transition of IL is observed, which offers an alternative approach to control IL-gated 2D-semiconductor-based FETs. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T06:13:18Z (GMT). No. of bitstreams: 1 ntu-107-R05222057-1.pdf: 4057941 bytes, checksum: 33898261160645e1782ccf35febd1939 (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | 致謝 I
中文摘要 II ABSTRACT III CONTENTS IV LIST OF FIGURES VI Chapter 1 Introduction 1 1.1 Two-dimensional semiconductors 1 1.2 Indium Selenide 3 1.3 Ionic liquid and electrical double layer 7 1.4 Paper review 12 1.5 Motivation 18 1.6 Thesis structure 19 Chapter 2 Theory 20 2.1 Carrier mobility 20 2.1.1 Origin of carrier mobility 20 2.1.2 Field effect mobility 23 2.2 Origins of carrier scattering 24 2.2.1 Electron – phonon scattering 24 2.2.2 Charged impurity scattering 26 2.2.3 Surface optical phonon scattering 27 2.3 Hysteresis of electronic transport in 2D field effect transistors 29 2.4 Schottky barrier height 32 Chapter 3 Experimental techniques 36 3.1 Device fabrication of InSe FETs 36 3.1.1 Exfoliation of layered Indium Selenide 36 3.1.2 Resist-free fabrication of contact electrodes 37 3.1.3 Coating ionic liquid 40 3.2 Electrical properties measurement techniques 41 3.3 Optical properties measurement techniques 42 3.4 Atomic Force Microscopy 45 Chapter 4 Results and discussions 47 4.1 Optimization of ionic – liquid – gated InSe FETs 47 4.1.1 Gating efficiency of ionic liquid 47 4.1.2 IL gate and back gate sweeping 50 4.1.3 Effect of dropping IL inside the glove bag 51 4.1.4 Consideration of the temperature range 52 4.2 Electrical transport properties of IL-gated InSe FETs 55 4.2.1 Enhancement of transport characteristics of InSe FETs by IL gating 55 4.2.2 Reduction of Schottky barrier height by IL gate 63 4.3 Transport properties of IL-gated InSe FETs influenced by phase transition of IL 66 4.3.1 Anomalous electrical characteristics enabled by phase transition of ionic liquid 66 4.3.2 Raman spectroscopy study of the IL-gated InSe FETs 70 4.3.3 Hysteresis behavior of IL-gated InSe FETs 75 Chapter 5 Conclusion 81 References 83 | |
dc.language.iso | en | |
dc.title | 離子液體閘極調控硒化銦場效電晶體的傳輸行為 | zh_TW |
dc.title | Transport behavior of Ionic-liquid-gated layered InSe Field Effect Devices | en |
dc.type | Thesis | |
dc.date.schoolyear | 107-1 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 梁啟德(Chi-Te Liang) | |
dc.contributor.oralexamcommittee | 張玉明(Yu-Ming Chang) | |
dc.subject.keyword | 硒化銦,場效電晶體,載子遷移率,離子液體,相變, | zh_TW |
dc.subject.keyword | InSe,field-effect transistor,mobility,ionic liquid,phase transition, | en |
dc.relation.page | 91 | |
dc.identifier.doi | 10.6342/NTU201800624 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2018-10-04 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理學研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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