請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7126
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
dc.contributor.author | Ying-Lun Kao | en |
dc.contributor.author | 高英倫 | zh_TW |
dc.date.accessioned | 2021-05-17T15:59:45Z | - |
dc.date.available | 2020-01-21 | |
dc.date.available | 2021-05-17T15:59:45Z | - |
dc.date.copyright | 2020-01-21 | |
dc.date.issued | 2020 | |
dc.date.submitted | 2020-01-16 | |
dc.identifier.citation | [1] Jeff Hecht. Lidar for self-driving cars. Optics and Photonics News, 29(1):26–33, 2018.
[2] Philip Dabney, David Harding, James Abshire, Tim Huss, Gabriel Jodor, Roman Machan, Joe Marzouk, Kurt Rush, Antonios Seas, Christopher Shuman, et al. The slope imaging multi-polarization photon-counting lidar: Development and perfor- mance results. In 2010 IEEE International Geoscience and Remote Sensing Sym- posium, pages 653–656. IEEE, 2010. [3] John J Degnan. Photon-counting multikilohertz microlaser altimeters for airborne and spaceborne topographic measurements. Journal of Geodynamics, 34(3-4):503– 549, 2002. [4] John J Degnan. Satellite laser ranging: current status and future prospects. IEEE Transactions on Geoscience and Remote Sensing, (4):398–413, 1985. [5] Xiaoli Sun, David R Skillman, Evan D Hoffman, Dandan Mao, Jan F McGarry, Gregory A Neumann, Leva McIntire, Ronald S Zellar, Frederic M Davidson, Wai H Fong, et al. Simultaneous laser ranging and communication from an earth-based satellite laser ranging station to the lunar reconnaissance orbiter in lunar orbit. In Free-Space Laser Communication and Atmospheric Propagation XXV, volume 8610, page 861003. International Society for Optics and Photonics, 2013. [6] HJ Zwally, Bob Schutz, Waleed Abdalati, James Abshire, Charles Bentley, Anita Brenner, Jack Bufton, Joe Dezio, David Hancock, David Harding, et al. Icesat’s laser measurements of polar ice, atmosphere, ocean, and land. Journal of Geody- namics, 34(3-4):405–445, 2002. [7] Claus Weitkamp. Lidar: range-resolved optical remote sensing of the atmosphere, volume 102. Springer Science & Business, 2006. [8] Nicolas Gisin, Grégoire Ribordy, Wolfgang Tittel, and Hugo Zbinden. Quantum cryptography. Reviews of modern physics, 74(1):145, 2002. [9] Ilaria Bargigia, Alberto Tosi, Andrea Farina, Andrea Bassi, Paola Taroni, An- drea Bahgat Shehata, Adriano Della Frera, Alberto Dalla Mora, Franco Zappa, Ri- naldo Cubeddu, et al. Time-domain diffuse optical spectroscopy up to 1700 nm using an InGaAs/InP single-photon avalanche diode. In Optical Biopsy IX, volume 7895, page 78950C. International Society for Optics and Photonics, 2011. [10] GAMHurkx,FGO’Hara,andMPGKnuvers.Modellingforward-biasedtunneling. In ESSDERC’89: 19th European Solid State Device Research Conference, pages 793–796. IEEE, 1989. [11] HiroakiAndo,HiroshiKanbe,MasanoriIto,andTakaoKaneda.TunnelingCurrent in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode. Japanese Journal of Applied Physics, 19(6):L277–L280, June 1980. [12] CarloJacoboniandPaoloLugli.TheMonteCarlomethodforsemiconductordevice simulation, chapter 2. Springer, 1 edition, 1989. [13] N. David Mermin Neil W. Ashcroft. Solid State Physics, chapter 12. Cengage Learning, 1 edition, January 1976. [14] Yasunori Saito, Hidefumi Kurata, Hiroshi Kurushima, Fumitoshi Kobayashi, Takuya D Kawahara, Akio Nomura, Tomoyuki Maruyama, and Mitsuyoshi Tanaka. Experimental discussion on eye-safe 1.54 μm photon counting lidar us- ing avalanche photodiode. Optical review, 11(6):378–384, 2004. [15] Joshua D Vande Hey. A novel lidar ceilometer: design, implementation and char- acterisation. Springer, 2014. [16] Joe C Campbell. Recent advances in avalanche photodiodes. Journal of Lightwave Technology, 34(2):278–285, 2016. [17] Federico Capasso. Physics of avalanche photodiodes. In Semiconductors and semimetals, volume 22, pages 1–172. Elsevier, 1985. [18] CLAndersonandCRCrowell.Thresholdenergiesforelectron-holepairproduction by impact ionization in semiconductors. Physical Review B, 5(6):2267, 1972. [19] Katsuhiko Nishida, Kenko Taguchi, and Yoshishige Matsumoto. InGaAsP het- erostructure avalanche photodiodes with high avalanche gain. Applied Physics Let- ters, 35(3):251–253, 1979. [20] SR Forrest, M DiDomenico Jr, RG Smith, and HJ Stocker. Evidence for tunneling in reverse-biased III-V photodetector diodes. Applied Physics Letters, 36(7):580– 582, 1980. [21] Nobuhiko Susa, Hiroshi Nakagome, Osamu Mikami, Hiroaki Ando, and Hiroshi Kanbe. New InGaAs/InP avalanche photodiode structure for the 1-1.6 μm wave- length region. IEEE Journal of Quantum Electronics, 16(8):864–870, 1980. [22] LW Cook, N Tabatabaie, MM Tashima, TW Windhorn, GE Bulman, and GE Still- man. Low leakage LPE-grown InGaAs/InP avalanche photodiodes. In Inst. Phys. Conf., volume 56, pages 361–370, 1981. [23] OK Kim, SR Forrest, WA Bonner, and RG Smith. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current. Applied Physics Letters, 39(5):402–404, 1981. [24] SR Forrest, OK Kim, and RG Smith. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes. Applied Physics Letters, 41(1):95–98, 1982. [25] Y Matsushima, K Sakai, and Y Noda. New type InGaAs/InP heterostructure avalanche photodiode with buffer layer. IEEE Electron Device Letters, 2(7):179– 181, 1981. [26] Y Matsushima, S Akiba, K Sakai, Y Kushiro, Y Noda, and K Utaka. High-speed- response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers. Electronics Letters, 18(22):945–946, 1982. [27] Kazuhito Yasuda, Tatsunori Shirai, Yutaka Kishi, Susumu Yamazaki, and Takao Kaneda. Heterojunction effect on spectral and frequency responses in InP/InGaAsP/InGaAs apd. Japanese Journal of Applied Physics, 22(S1):291, 1983. [28] JC Campbell, AG Dentai, WS Holden, and BL Kasper. High-performance avalanchephotodiodewithseparateabsorptio‘n grading’andmultiplicationregions. Electronics Letters, 19(20):818–820, 1983. [29] StephenRForrest.Avalanchephotodiodewithfloatingguardring,August151989. US Patent 4,857,982. [30] Hiroaki Ando, Yoshiharu Yamauchi, Hirbshi Nakagome, Nobuhiko Susa, and Horoshi Kanbe. InGaAs/InP separated absorption and multiplication regions avalanche photodiode using liquid-and vapor-phase epitaxies. IEEE Journal of Quantum Electronics, 17(2):250–254, 1981. [31] AG Chynoweth and KG McKay. Photon emission from avalanche breakdown in silicon. Physical Review, 102(2):369, 1956. [32] AG Chynoweth and GL Pearson. Effect of dislocations on breakdown in silicon p-n junctions. Journal of Applied Physics, 29(7):1103–1110, 1958. [33] RL Batdorf, AG Chynoweth, GC Dacey, and PW Foy. Uniform silicon p-n junc- tions. i. broad area breakdown. Journal of Applied Physics, 31(7):1153–1160, 1960. [34] GGibbonsandJKocsis.Breakdownvoltagesofgermaniumplane-cylindricaljunc- tions. IEEE Transactions on Electron Devices, 12(4):193–198, 1965. [35] HAROLDLArmstrong.Atheoryofvoltagebreakdownofcylindricalpnjunctions, with applications. IRE Transactions on Electron Devices, 4(1):15–16, 1957. [36] SM Sze and G Gibbons. Effect of junction curvature on breakdown voltage in semiconductors. Solid-State Electronics, 9(9):831–845, 1966. [37] O Leistiko Jr and AS Grove. Breakdown voltage of planar silicon junctions. Solid- State Electronics, 9(9):847–852, 1966. [38] JP Donnelly, CA Armiento, V Diadiuk, and SH Groves. Planar guarded avalanche diodes in InP fabricated by ion implantation. Applied Physics Letters, 35(1):74–76, 1979. [39] Tatsunori Shirai, Susumu Yamazaki, Haruo Kawata, Kazuo Nakajima, and Takao Kaneda. A planar InP/InGaAsP heterostructure avalanche photodiode. IEEE Trans- actions on Electron Devices, 29(9):1404–1407, 1982. [40] Y Liu, STEPHEN R Forrest, VS Ban, KM Woodruff, J Colosi, GC Erikson, MJ Lange, and GREGORY H Olsen. Simple, very low dark current, planar long- wavelength avalanche photodiode. Applied physics letters, 53(14):1311–1313, 1988. [41] Y Liu, Stephen R Forrest, J Hladky, MJ Lange, Gregory H Olsen, and DE Ackley. A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction. Journal of Lightwave Technology, 10(2):182–193, 1992. [42] Fabio Acerbi, Michele Anti, Alberto Tosi, and Franco Zappa. Design Criteria for InGaAs/InP Single-Photon Avalanche Diode. IEEE Photonics Journal, 5(2):1–10, April 2013. [43] WTRW Shockley and WT Read Jr. Statistics of the recombinations of holes and electrons. Physical review, 87(5):835, 1952. [44] AG Chynoweth, WL Feldmann, and RA Logan. Excess tunnel current in silicon Esaki junctions. Physical Review, 121(3):684, 1961. [45] Xiaoli Ji, Baiqing Liu, Yue Xu, Hengjing Tang, Xue Li, HaiMei Gong, Bo Shen, Xuelin Yang, Ping Han, and Feng Yan. Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector. Journal of Applied Physics, 114(22):224502, 2013. [46] J Wen, WJ Wang, XR Chen, N Li, XS Chen, and W Lu. Origin of large dark current increase in InGaAs/InP avalanche photodiode. Journal of Applied Physics, 123(16):161530, 2018. [47] A Liu and Y Rosenwaks. Excess carriers lifetime in inp single crystals: Radiative versus nonradiative recombination. Journal of applied physics, 86(1):430–437, 1999. [48] GAMHurkx,HCDeGraaff,WJKloosterman,andMPGKnuvers.Anewanalytical diode model including tunneling and avalanche breakdown. IEEE Transactions on electron devices, 39(9):2090–2098, 1992. [49] GJ Van Gurp, PR Boudewijn, MNC Kempeners, and DLA Tjaden. Zinc diffusion in n-type indium phosphide. Journal of applied physics, 61(5):1846–1855, 1987. [50] LL Chang and HC Casey Jr. Diffusion and solubility of zinc in indium phosphide. Solid-State Electronics, 7(6):481–485, 1964. [51] Tihomir Knežević and Tomislav Suligoj. Analysis of electrical and optical charac- teristics of inp/ingaas avalanche photodiodes in linear regime by a new simulation environment. In 2016 39th International Convention on Information and Com- munication Technology, Electronics and Microelectronics (MIPRO), pages 28–33. IEEE, 2016. [52] TCAD Sentaurus. Sprocess user guide, ver. L-2016.03, Synopsys, 2016. [53] S R Forrest, R F Leheny, R E Nahory, and M A Pollack. In0.53Ga0.47As photodi- odes with dark current limited by generation-recombination and tunneling. Applied Physics Letters, 37(3):322–325, August 1980. [54] YoshifumuTakanashi,MinoruKawashima,andYoshijiHorikoshi.RequiredDonor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes. Japanese Journal of Applied Physics, 19(4):693–701, April 1980. [55] J P Donnelly, E K Duerr, K A Mcintosh, E A Dauler, D C Oakley, S H Groves, C J Vineis, L J Mahoney, K M Molvar, P I Hopman, K E Jensen, G M Smith, S Vergh- ese, and D C Shaver. Design Considerations for 1.06-μm InGaAsP–InP Geiger- Mode Avalanche Photodiodes. IEEE Journal of Quantum Electronics, 42(8):797– 809, August 2006. [56] Simon Verghese, Joseph P Donnelly, Erik K Duerr, K Alex McIntosh, David C Chapman, Christopher J Vineis, Gary M Smith, Joseph E Funk, Katharine Es- telle Jensen, Pablo I Hopman, David C Shaver, Brian F Aull, Joseph C Aversa, Jonathan P Frechette, James B Glettler, Zong Long Liau, Joseph M Mahan, Leonard J Mahoney, Karen M Molvar, Frederick J O Donnell, Douglas C Oakley, Edward J Ouellette, Matthew J Renzi, and Brian M Tyrrell. Arrays of InP-based Avalanche Photodiodes for Photon Counting. IEEE Journal of Selected Topics in Quantum Electronics, 13(4):870–886, September 2007. [57] J J Liou. Modeling the tunneling current in reverse-based p/n junctions. Solid State Electronics, 33(7):971–972, 1990. [58] G A M Hurkx. On the modeling of tunneling currents in reversed-biased p-n junc- tions. Solid State Electronics, 32(8):665–668, 1989. [59] TCAD Sentaurus. Sdevice user guide, ver. L-2016.03, Synopsys, 2016. [60] John L. Moll. Physics of Semiconductors, pages 248–249. McGraw-Hill, third edition, 1970. [61] EO Kane. Zener tunneling in semiconductors. Journal of Physics and Chemistry of Solids, 12(2):181–188, 1960. [62] John L. Moll. Physics of Semiconductors. McGraw-Hill, 1970. [63] Joseph W Parks, Arlynn W Smith, Kevin F Brennan, and Larry E Tarof. Theoret- ical study of device sensitivity and gain saturation of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes. IEEE transactions on electron devices, 43(12):2113–2121, 1996. [64] Sajal Paul, JB Roy, and PK Basu. Empirical expressions for the alloy composi- tion and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs. Journal of applied physics, 69(2):827–829, 1991. [65] LPavesi,FPiazza,ARudra,JFCarlin,andMIlegems.Temperaturedependenceof the InP band gap from a photoluminescence study. Physical Review B, 44(16):9052, 1991. [66] R Benzaquen, S Charbonneau, N Sawadsky, AP Roth, R Leonelli, L Hobbs, and G Knight. Alloy broadening in photoluminescence spectra of Gax In1−x Asy P1−y lattice matched to InP. Journal of applied physics, 75(5):2633–2639, 1994. [67] Ankit Rohatgi. Webplotdigitizer, 2011. [68] EN Korol et al. Ionization of impurity states in semiconductors by an electric field. Sov. Phys. Solid State, 8:1327, 1977. [69] WW Anderson and HJ Hoffman. Field ionization of deep levels in semiconduc- tors with applications to Hg1−xCdxTe p-n junctions. Journal of applied physics, 53(12):9130–9145, 1982. [70] G Vincent, A Chantre, and D Bois. Electric field effect on the thermal emission of traps in semiconductor junctions. Journal of Applied Physics, 50(8):5484–5487, 1979. [71] G A M Hurkx, D B M Klassen, and M P G Knuvers. A New Recombination Model for Device Simulation Including Tunneling. IEEE transactions on electron devices, 39(2):331–338, February 1992. [72] OKBLuiandPMigliorato.Anewgeneration-recombinationmodelfordevicesim- ulation including the Poole-Frenkel effect and phonon-assisted tunnelling. Solid- State Electronics, 41(4):575–583, 1997. [73] Robert Allan Smith. Wave mechanics of crystalline solids, chapter 11. Chapman & Hall, 2 edition, 1963. [74] Robert Allan Smith. Wave mechanics of crystalline solids, chapter 5. Chapman & Hall, 2 edition, 1963. [75] FBloch.Z.physik52,555(1928);c.zener.Proc.Roy.Soc.LondonSer.A,145:523, 1934. [76] John Clarke Slater. Electrons in perturbed periodic lattices. Physical Review, 76(11):1592, 1949. [77] NicolaMarzari,ArashAMostofi,JonathanRYates,IvoSouza,andDavidVander- bilt. Maximally localized wannier functions: Theory and applications. Reviews of Modern Physics, 84(4):1419, 2012. [78] Arthur George Milnes. Deep impurities in semiconductors. 1973. [79] XD Wang, WD Hu, XS Chen, W Lu, HJ Tang, T Li, and HM Gong. Dark cur- rent simulation of inp/in 0.53 ga 0.47 as/inp pin photodiode. Optical and quantum electronics, 40(14-15):1261–1266, 2008. [80] A Goldberg Yu and NM Schmidt. Handbook series on semiconductor parameters (vol 2) ed m levinshtein et al, 1999. [81] LV Keldysh. Deep levels in semiconductors. Sov. Phys. JETP, 18(1):253, 1964. [82] Fukunobu Osaka, Takashi Mikawa, and Osamu Wada. Analysis of impact ioniza- tion phenomena in InP by Monte Carlo simulation. Japanese journal of applied physics, 25(3R):394, 1986. [83] JGFossumandDSLee.Aphysicalmodelforthedependenceofcarrierlifetimeon doping density in nondegenerate silicon. Solid-State Electronics, 25(8):741–747, 1982. [84] JG Fossum, RP Mertens, DS Lee, and JF Nijs. Carrier recombination and lifetime in highly doped silicon. Solid-State Electronics, 26(6):569–576, 1983. [85] Y Rosenwaks, Yoram Shapira, and D Huppert. Picosecond time-resolved lumines- cence studies of surface and bulk recombination processes in InP. Physical Review B, 45(16):9108, 1992. [86] Jane A Yater, I Weinberg, Phillip P Jenkins, and Geoffrey A Landis. Minority- carrier lifetime in inp as a function of light bias. In Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion-WCPEC (A Joint Confer- ence of PVSC, PVSEC and PSEC), volume 2, pages 1709–1712. IEEE, 1994. [87] Phillip Jenkins, Geoffrey A Landis, Irving Weinberg, and Keith Kneisel. Minority carrier lifetime in indium phosphide. In The Conference Record of the Twenty- Second IEEE Photovoltaic Specialists Conference-1991, pages 177–181. IEEE, 1991. [88] Geoffrey A Landis, Phillip Jenkins, and Irving Weinberg. Photoluminescence life- time measurements in InP wafers. In [Proceedings 1991] Third International Con- ference Indium Phosphide and Related Materials, pages 636–639. IEEE, 1991. [89] INSPEC (Information service). Properties of indium phosphide. Number 6. In- spec/Iee, 1991. [90] S Bothra, S Tyagi, SK Ghandhi, and JM Borrego. Surface recombination velocity and lifetime in InP. Solid-state electronics, 34(1):47–50, 1991. [91] Y Rosenwaks, Yoram Shapira, and D Huppert. Evidence for low intrinsic surface- recombination velocity on p-type InP. Physical Review B, 44(23):13097, 1991. [92] RK Ahrenkiel, DJ Dunlavy, and T Hanak. Photoluminescence lifetime in hetero- junctions. Solar Cells, 24(3-4):339–352, 1988. [93] John Wilfred Orton and Peter Blood. The electrical characterization of semicon- ductors: measurement of minority carrier properties. Academic Press London, 1990. [94] Masafumi Yamaguchi, Seiji Shinoyama, and Chikao Uemura. Electron mobility and minority-carrier lifetime of n-InP single crystals grown by liquid-encapsulated czochralski method. Journal of Applied Physics, 52(10):6429–6431, 1981. [95] Jiao Xu, Xiaoshuang Chen, Wenjuan Wang, and Wei Lu. Extracting dark current components and characteristics parameters for InGaAs/InP avalanche photodiodes. Infrared Physics & Technology, 76:468–473, 2016. [96] AGChynoweth.Ionizationratesforelectronsandholesinsilicon.physicalreview, 109(5):1537, 1958. [97] RVanOverstraetenandHDeMan.Measurementoftheionizationratesindiffused silicon pn junctions. Solid-State Electronics, 13(5):583–608, 1970. [98] YOkutoandCRCrowell.Thresholdenergyeffectonavalanchebreakdownvoltage in semiconductor junctions. Solid-State Electronics, 18(2):161–168, 1975. [99] Thomas Lackner. Avalanche multiplication in semiconductors: A modification of Chynoweth’s law. Solid-State Electronics, 34(1):33–42, 1991. [100] Y Okuto and CR Crowell. Ionization coefficients in semiconductors: A nonlocal- ized property. Physical review B, 10(10):4284, 1974. [101] A Spinelli, A Pacelli, and AL Lacaita. Dead space approximation for impact ion- ization in silicon. Applied physics letters, 69(24):3707–3709, 1996. [102] RJ McIntyre. A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response. IEEE Transactions on Electron Devices, 46(8):1623–1631, 1999. [103] LWCook,GEBulman,andGEStillman.Electronandholeimpactionizationcoef- ficients in InP determined by photomultiplication measurements. Applied Physics Letters, 40(7):589–591, 1982. [104] TP Pearsall. Impact ionization rates for electrons and holes in Ga0.47In0.53As. Ap- plied Physics Letters, 36(3):218–220, 1980. [105] Fukunobu Osaka, Takashi Mikawa, and Takao Kaneda. Electron and hole ioniza- tion coefficients in (100) oriented Ga0.33In0.67As0.70P0.30. Applied Physics Letters, 45(3):292–293, 1984. [106] Fukunobu Osaka, Takashi Mikawa, and Takao Kaneda. Electron and hole ioniza- tion coefficients in (100) oriented Ga0.18In0.82As0.39P0.61. Applied Physics Letters, 45(6):654–656, 1984. [107] YoshifumiTakanashiandYoshijiHorikoshi.IonizationcoefficientofInGaAsP/InP apd. Japanese Journal of Applied Physics, 18(11):2173, 1979. [108] Kenko Taguchi, Toshitaka Torikai, Yoshimasa Sugimoto, Kikuo Makita, and Hisahiro Ishihara. Temperature dependence of impact ionization coefficients in inp. Journal of applied physics, 59(2):476–481, 1986. [109] Gene A Baraff. Distribution functions and ionization rates for hot electrons in semiconductors. Physical review, 128(6):2507, 1962. [110] Y Okuto and CR Crowell. Energy-conservation considerations in the characteriza- tion of impact ionization in semiconductors. Physical Review B, 6(8):3076, 1972. [111] TPPearsall.ThresholdenergiesforimpactionizationbyelectronsandholesinInP. Applied Physics Letters, 35(2):168–170, 1979. [112] WJ Turner and WE Reese. Radiative recombination in semiconductors (dunod, paris, 1965). Google Scholar WJ Turner, WE Reese, and GD Pettit, Phys. Rev, 136:1467, 1964. [113] CR Crowell and SM Sze. Temperature dependence of avalanche multiplication in semiconductors. Applied Physics Letters, 9(6):242–244, 1966. [114] Ansgar Jüngel. Transport equations for semiconductors, volume 773. Springer, 2009. [115] Carlo Jacoboni. Theory of electron transport in semiconductors: a pathway from elementary physics to nonequilibrium Green functions, volume 165. Springer Science & Business Media, 2010. [116] R Stratton. Diffusion of hot and cold electrons in semiconductor barriers. Physical Review, 126(6):2002, 1962. [117] RB Emmons and G Lucovsky. The frequency response of avalanching photodiodes. IEEE Transactions on Electron Devices, (3):297–305, 1966. [118] FR Bacher, JS Blakemore, JT Ebner, and JR Arthur. Optical-absorption coefficient of In1−xGaxAs/InP. Physical Review B, 37(5):2551, 1988. [119] Sadao Adachi. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, Alx Ga1−x As, and In1−x Gax Asy P1−y . Journal of Applied Physics, 66(12):6030– 6040, 1989. [120] CL Forrest Ma, M Jamal Deen, Larry E Tarof, and Jeffrey CH Yu. Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication inp/ingaas avalanche photodiodes. IEEE Transactions on Electron Devices, 42(5):810–818, 1995. [121] Hin-Fai Chau and Dimitris Pavlidis. A physics-based fitting and extrapolation method for measured impact ionization coefficients in iii-v semiconductors. Jour- nal of applied physics, 72(2):531–538, 1992. [122] GE Stillman and CM Wolfe. Avalanche photodiodes. In Semiconductors and semimetals, volume 12, pages 291–393. Elsevier, 1977. [123] TCAD Synopsys. Sentaurus tutorial, copyright© 2016 synopsys. Inc. All rights reserved. [124] Chih-Tang Sah, Robert N Noyce, and William Shockley. Carrier generation and recombination in pn junctions and pn junction characteristics. Proceedings of the IRE, 45(9):1228–1243, 1957. [125] H Sudo, M Suzuki, and N Miyahara. Observation of the surface degradation mode of InP/InGaAs APD’s during bias-temperature test. IEEE electron device letters, 8(9):386–388, 1987. [126] Hiromi Sudo and Masamitsu Suzuki. Surface degradation mechanism of InP/InGaAs APDs. Journal of Lightwave Technology, 6(10):1496–1501, 1988. [127] QY Zeng, WJ Wang, J Wen, L Huang, XH Liu, N Li, and W Lu. Effect of sur- face charge on the dark current of InGaAs/InP avalanche photodiodes. Journal of Applied Physics, 115(16):164512, 2014. [128] Je Campbell, W Holden, G Qua, and A Dentai. Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption” grading” and multiplication regions. IEEE journal of quantum electronics, 21(11):1743– 1746, 1985. [129] Nobuhiko Susa, Hiroshi Nakagome, Hiroaki Ando, and H Kanbe. Characteristics in InGaAs/InP avalanche photodiodes with separated absorption and multiplication regions. IEEE Journal of Quantum Electronics, 17(2):243–250, 1981. [130] Nobuhiko Susa and Yoshiharu Yamauchi. Vapor phase epitaxial growth of InP on liquid phase epitaxial In0.53Ga0.47As. Journal of Crystal Growth, 51(3):518–524, 1981. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/7126 | - |
dc.description.abstract | 光偵測器的關鍵特性就在於其足夠小的暗電流與光電流增益。對於前者,我們需要了解暗電流成因以設計足夠小暗電流的元件。對於後者,由於SAGCM平面結構之雪崩光電二極體很可能發生邊緣崩潰,降低元件增益。因此,我們需要設計護環(Guard ring)以抑制邊緣崩潰。
為了研究雪崩光電二極體之暗電流成因,本研究首先藉由推演其暗電流成因理論,包括能帶穿隧效應(band-to-band tunneling)與缺陷輔助穿隧效應(trap-assisted tunneling),研究其理論參數之物理意義。並推導出能用以擬合Hurkx缺陷輔助穿隧模型的擬合公式,以了解暗電流成因。接著再藉由半導體工藝模擬軟體(Sentaurus TCAD)建立其物理模型以設計具有最小暗電流之磊晶結構。最後,我們設計了多種護環結構以研究護環效應,包括與中央區接觸的側護環(Attached Guard Ring,AGR),以及不與其接觸的懸護環(Floating Guard Ring,FGR)。 藉由樣品分析,我們發現擴散開口越大者,鋅擴散越淺。較深的側護環元件,有著較大的元件增益與崩潰電壓,也就越能抑制邊緣崩潰。懸護環離側護環越近,增益越小,越無法抑制邊緣崩潰。我們也分析了部分元件之異常電性,提出了會造成提前擊穿、漏電流與崩潰前之降電流等現象之模型。 | zh_TW |
dc.description.abstract | The key characteristics of photodetector is sufficiently small dark current and large gain. For the former, we need to understand the origin of dark current. For the latter, since it is very likely that the planar SAGCM APD has edge breakdown and thus has smaller gain, we need to design guard ring to supress edge breakdown.
To investigate the origin of dark current, we first derive the dominant dark current mechanisms, including band-to-band tunneling and trap-assisted tunneling. Then we could understand the physics meaning of their modeling parameters. For trap-assisted tunneling, we derive the Hurkx model and the corresponding fitting formula. Second, we use Sentaurus TCAD to simulate the avalanche photodiode, establishing the epitaxial structure which has small enough dark current. Finally, we design various guard ring structures to investigate its effects, including attached guard ring (AGR) and floating guard ring (FGR). It is found that the larger the diffusion window is, the shallower the diffusion depth is. Deeper attached guard ring has higher gain and breakdown voltage, and thus suppressing edge breakdown. The closer floating guard ring has lower gain. We also analyze the anomalous I-V characteristics and propose the advanced punch through, surface leakage and guard-ring punch through models. | en |
dc.description.provenance | Made available in DSpace on 2021-05-17T15:59:45Z (GMT). No. of bitstreams: 1 ntu-109-R06943183-1.pdf: 17384747 bytes, checksum: 1ce8d1b77e2a6e022edb1007724bd639 (MD5) Previous issue date: 2020 | en |
dc.description.tableofcontents | 1 緒論 1
1.1 研究背景..................................... 1 1.2 研究動機.................................... 1 1.3 研究目的.................................... 2 1.4 研究方法.................................... 2 1.5 論文架構.................................... 3 1.6 名詞解釋.................................... 3 2 文獻回顧 .......................................5 2.1 元件結構..................................... 5 2.1.1 磊晶結構................................... 5 2.1.2 平面結構................................... 6 2.1.3 護環結構................................... 7 2.2 暗電流成因................................. 10 3 元件模擬 ........................................13 3.1 鋅擴散模型.................................. 13 3.2 能帶穿隧模型 ............................. 16 3.2.1 理論 ....................................... 16 3.2.2 參數驗證................................. 21 3.3 SRH復合模型............................. 24 3.3.1 等效質量近似........................... 25 3.3.2 Hurkx缺陷輔助穿隧模型........... 31 3.3.3 Hurkx模型有效性..................... 38 3.3.4 原初生命期 .............................. 43 3.4 撞擊游離模型 ............................. 46 3.4.1 VanOverstraeten-deMan模型 .. 47 3.4.2 Okuto-Crowell模型.................. 48 3.4.3 InP文獻數據比較...................... 49 3.5 傳輸方程式................................. 50 4 元件設計 ......................................53 4.1 磊晶結構.................................... 53 4.1.1 設計流程.................................. 54 4.1.2 以量子效率決定吸收層厚度 ...... 54 4.1.3 基本設計考量........................... 57 4.1.4 一維模擬:以低溫條件與暗電流求最佳參數.......... 58 4.1.5 二維模擬:改變倍增層濃度與游離係數模型.......... 61 4.2 護環模擬................................ 65 4.2.1 淺側護環............................. 65 4.2.2 深側護環............................. 65 4.2.3 側護環搭配懸護環 .............. 68 4.3 護環設計............................... 68 4.3.1 擴散順序............................. 69 4.3.2 護環尺寸............................. 71 4.4 接觸電極設計 ........................ 71 5 樣品分析 .................................. 73 5.1 樣品結構................................ 73 5.2 護環效應................................ 75 5.2.1 量測方式.............................. 75 5.2.2 倍增層厚度 ......................... 77 5.2.3 主動區直徑 ......................... 80 5.2.4 懸護環距離 ......................... 85 5.2.5 側護環深度 ......................... 88 5.2.6 側護環直徑 ......................... 91 5.2.7 電極效應............................. 93 5.2.8 元件增益............................. 94 5.3 暗電流分析............................. 97 5.3.1 擬合公式.............................. 97 5.3.2 定溫擬合............................. 99 5.3.3 變溫擬合............................ 101 5.4 異常電性............................... 105 5.4.1 短路現象............................ 105 5.4.2 漏流現象............................ 105 5.4.3 提前擊穿現象..................... 109 5.4.4 崩潰前之降電流.................. 110 5.5 量子效率............................... 115 5.5.1 光源頻譜............................. 115 5.5.2 元件增益............................ 115 5.5.3 結果討論............................ 116 6 結論 ....................................... 119 Bibliography .............................. 121 | |
dc.language.iso | zh-TW | |
dc.title | InP/InGaAsP/InGaAs雪崩光電二極體之TCAD模擬、護環效應與暗電流分析 | zh_TW |
dc.title | TCAD simulation, guard ring effect and dark current analysis of InP/InGaAsP/InGaAs avalanche photodiode | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 羅俊傑(Jiunn-Jye Luo),黃朝興(Chao-Xing Huang) | |
dc.subject.keyword | 雪崩光電二極體,護環,暗電流,能井輔助穿隧,能帶穿隧, | zh_TW |
dc.subject.keyword | Avalanche photodiode,Guard ring,Dark current,Trap-assisted tunneling,Band-to-band tunneling, | en |
dc.relation.page | 134 | |
dc.identifier.doi | 10.6342/NTU201904385 | |
dc.rights.note | 同意授權(全球公開) | |
dc.date.accepted | 2020-01-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-109-1.pdf | 16.98 MB | Adobe PDF | 檢視/開啟 |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。