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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳肇欣 | |
| dc.contributor.author | Kai-Chieh Hsu | en |
| dc.contributor.author | 許凱傑 | zh_TW |
| dc.date.accessioned | 2021-06-17T04:48:26Z | - |
| dc.date.available | 2023-08-01 | |
| dc.date.copyright | 2018-08-01 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-07-31 | |
| dc.identifier.citation | [1] U. K. Mishra, L. Shen, T. E. Kazior and Y. F. Wu, 'GaN-Based RF Power Devices and Amplifiers,' in Proceedings of the IEEE, vol. 96, no. 2, pp. 287-305, Feb. 2008.
[2] Alex Lidow, “Can Gallium Nitride Replace Silicon?” Power Electronics Europe, issue 2, 2010. [3] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck, ”Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, pp.3222-3233, Mar. 1999. [4] Lesnik, A. , Hoffmann, M. P., Fariza, A. , Bläsing, J. , Witte, H. , Veit, P. , Hörich, F. , Berger, C. , Hennig, J. , Dadgar, A. and Strittmatter, A. (2017), Properties of C‐doped GaN. Phys. Status Solidi B, 254: 1600708. [5] Chen, Jr-Tai. (2016). Carbon-doped AlGaN/GaN HEMTs for RF applications. [6] A Teke et al 2009 New J. Phys.11 063031. The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures [7] B. H. Lee et al., 'High RF performance improvement using surface passivation technique of AlGaN/GaN HEMTs at K-band application,' in Electronics Letters, vol. 49, no. 16, pp. 1013-1015, Aug. 1 2013. [8] Wang, H. , Chung, J. W., Gao, X. , Guo, S. and Palacios, T. (2010), Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance. Phys. Status Solidi (c), 7: 2440-2444. [9] Z. Sheng, W. Ke, Y. Le, L. Guo-Guo, H. Sen, W. Xin-Hua, P. Lei, Z. Ying-Kui, L. Yan-Kui, M. Xiao-Hua, S. Bing, and L. Xin-Yu, Chin. Phys. B 24, 117307 (2015). [10] Preethi Someswaran,Large Signal Modelling of AlGaN/GaN HEMT for Linearity Prediction Thesis(2015). [11] G. Dambrine, A. Cappy, F. Heliodore and E. Playez, 'A new method for determining the FET small-signal equivalent circuit,' in IEEE Transactions on Microwave Theory and Techniques, vol. 36, no. 7, pp. 1151-1159, Jul 1988. [12] G. Crupi et al., 'Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs,' in IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 10, pp. 3616-3622, Oct. 2006. [13] F. Diamand and M. Laviron, 'Measurement of the Extrinsic Series Elements of a Microwave Mesfet Under Zero Current Conditions,' 1982 12th European Microwave Conference, Helsinki, Finland, 1982, pp. 451-456. [14] Q. Fan, J. H. Leach and H. Morkoc, 'Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET,' in Proceedings of the IEEE, vol. 98, no. 7, pp. 1140-1150, July 2010. [15] Guang Chen, V. Kumar, R. S. Schwindt and I. Adesida, 'A low gate bias model extraction technique for AlGaN/GaN HEMTs,' in IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 7, pp. 2949-2953, July 2006. [16] A. Jarndal and G. Kompa, 'A new small-signal modeling approach applied to GaN devices,' in IEEE Transactions on Microwave Theory and Techniques, vol. 53, no. 11, pp. 3440-3448, Nov. 2005. [17] YaserA.Khalaf, Systematic Optimization Technique for MESFET Modeling(2000) [18] C. W. Tsou, C. Y. Lin, Y. W. Lian and S. S. H. Hsu, '101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit,' in IEEE Transactions on Electron Devices, vol. 62, no. 8, pp. 2675-2678, Aug. 2015. [19] D. Marti et al., '94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts,' in IEEE Electron Device Letters, vol. 36, no. 1, pp. 17-19, Jan. 2015. [20] X. Luo et al., 'Scaling and high-frequency performance of AlN/GaN HEMTs,' 2011 IEEE International Symposium on Radio-Frequency Integration Technology, Beijing, 2011, pp. 209-212. [21] T. Lalinsky, J. Skriniarova, I. Kostic, A. Hart van der, P. Hrkut, S. Hascmk, L. Matay, Z. Mozolova, P. Kordos, 'T-shaped Gates for Heterostructure Field Effect Transistors', Joint Vacuum Conference of Croatia, vol. 69, pp. 329-332, 2001. [22] E. V. Anishchenko, E. V. Erofeev, S. V. Ishutkin, V. A. Kagadei and K. S. Nosaeva, 'The formation of multilayer resist mask for transistor T-gates fabrication using electron-beam lithography,' 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings, Erlagol, Altai, 2011, pp. 146-149. [23] Chen, Yifang & Peng, Kaiwu & Cui, Zheng. (2004). Fabrication of ultra-short T gates by a two-step electron beam lithography process. Microelectronic Engineering. 73. 662-665. 10.1016/j.mee.2004.03.010. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/71012 | - |
| dc.description.abstract | 本篇論文中，我們採用於高阻矽基板上的氮化鋁鎵/氮化鎵異質接面結構製作高頻HEMT元件，並分析其直流與高頻特性。
論文首先針對元件的直流特性進行分析，我們利用電子束技術成功製作出閘極線寬150奈米的元件，最高將gm推至247.4 mS/mm，並針對不同的幾何尺寸進行探討 接著為了分析元件的高頻特性，我們利用ADS模擬軟件建立一套小訊號等效電路模型，幫助我們了解元件內部小訊號參數的影響，同時也針對不同幾何尺寸的元件進行分析，最佳元件fT與fmax於汲極偏壓30V下，分別為25.86 GHz和99.26 GHz。 最後為了進一步提升截止頻率，我們開發T型閘極製程，其目的為降低Rg電阻，使fmax能繼續往上提升。 | zh_TW |
| dc.description.abstract | In this thesis, we fabricate the RF device with AlGaN/GaN heterostructures on 4-inch silicon substrate and analyze their electrical characteristics.
First, we analyze the DC chatacteristics of device. We successfully use E-beam lithography technology to define gate length about 150nm. The small gate length leads high transconductance(gm) about 247.4 mS/mm. We also discuss different geometric device in this part. For high frequency characteristics, we build the small-signal model by ADS and simulate each component in the circuit. The best device fT and fmax are 25.26GHz and 99.26 GHz respectively in VD=30V. Finally, in order to push up the fmax value, we develope the T-shaped gate process. In this structure, the wide upper layer increases the croess-sectional area of the gate, thus reducing gate resistance. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T04:48:26Z (GMT). No. of bitstreams: 1 ntu-107-R05943158-1.pdf: 4692515 bytes, checksum: 2e40064842347e953f918f16ae08dca8 (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 國立台灣大學碩士學位論文 口試委員審定書 I
致謝 II 中文摘要 III Abstract IV 目錄 V 圖目錄 VII 表目錄 X 第1章 緒論 1 1.1背景介紹 1 1.2氮化鎵材料特性介紹 3 1.3研究動機與論文概述 5 第2章 電晶體之製作與直流電性分析 6 2.1光罩佈局與結構設計 6 2.2高頻氮化鋁鎵/氮化鎵高電子遷移率電晶體製作 8 2.2.1磊晶結構 8 2.2.2電晶體製作流程 10 2.3電晶體直流電性分析與幾何尺寸比較 16 2.3.1電晶體直流電性分析 16 2.3.2元件幾何尺寸之分析 19 第3章 電晶體高頻特性與小訊號模型分析 23 3.1高電子遷移率電晶體之小訊號模型 23 3.1.1小訊號等效電路模型理論 23 3.1.2高頻量測原理 28 3.1.3外部寄生元件參數萃取 30 3.1.4內部本質元件參數萃取 34 3.2氮化鋁鎵/氮化鎵高電子遷移率電晶體之高頻特性 37 3.2.1高頻特性萃取結果與分析 37 3.2.2偏壓點對小訊號參數之影響 39 3.2.3元件幾何尺寸小訊號參數之影響 45 第4章 T型閘極之開發 57 4.1 T-Shaped Gate應用介紹 57 4.2 T-Shaped Gate之開發製作 58 4.2.1參數測試 58 4.2.2 T-Gate製作流程與成果 60 第5章 結論與未來展望 65 參考文獻 66 | |
| dc.language.iso | zh-TW | |
| dc.subject | 小訊號模型 | zh_TW |
| dc.subject | 高頻元件 | zh_TW |
| dc.subject | 氮化鋁鎵 /氮化鎵異質接面結構 | zh_TW |
| dc.subject | T型閘極 | zh_TW |
| dc.subject | AlGaN/GaN heterostructure | en |
| dc.subject | HEMT | en |
| dc.subject | RF device | en |
| dc.subject | Small-signal model | en |
| dc.subject | T-shaped gate | en |
| dc.title | 高頻氮化鋁鎵/氮化鎵高電子遷移率晶體之研究 | zh_TW |
| dc.title | Investigation of the High Frequency AlGaN/GaN HEMTs | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳敏璋,陳奕君,張書維 | |
| dc.subject.keyword | 氮化鋁鎵 /氮化鎵異質接面結構,高頻元件,小訊號模型,T型閘極, | zh_TW |
| dc.subject.keyword | AlGaN/GaN heterostructure,HEMT,RF device,Small-signal model,T-shaped gate, | en |
| dc.relation.page | 67 | |
| dc.identifier.doi | 10.6342/NTU201802271 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-08-01 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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