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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳林祈(Lin-Chi Chen) | |
| dc.contributor.author | Chi-Han Lu | en |
| dc.contributor.author | 呂奇翰 | zh_TW |
| dc.date.accessioned | 2021-06-17T04:34:39Z | - |
| dc.date.available | 2023-08-13 | |
| dc.date.copyright | 2018-08-13 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-08-09 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/70678 | - |
| dc.description.abstract | 固態式離子選擇電極 (solid-state ion-selective electrode, SS-ISE) 擁有利於微小化、平面化與較不受環境影響等優勢，為目前離子感測領域最為熱門的研究主題。然而，固態式離子選擇電極普遍長時間電位穩定性不佳，每次使用前皆須經過校正。因此，本研究藉由調控離子選擇薄膜與聚(3,4-乙烯二氧噻吩) (poly(3,4-ethylenedioxythiophene), PEDOT) 導電高分子離子電子傳導層的製程，如離子選擇薄膜的製程方法與PEDOT 的厚度、相對離子 (counter ion) 種類、電鍍方法等，以製作出長時間電位穩定性高的固態式離子選擇電極。首先，調整離子選擇薄膜的製程方法可以縮小其孔隙，進而降低水分子滲入電極的速率，減緩固態式離子選擇電極的水層效應。離子與電子之間的訊號轉換與離子選擇薄膜與PEDOT表面發生的氧化還原反應有關，因此PEDOT的電化學性質對大幅影響固態式離子選擇電極的電位穩定性。一般而言，離子電子傳導層應具有電化學穩定性高、贋電容值高與電荷轉移阻抗低等性質。在定電流的電鍍條件下，以ClO4-作為相對離子、厚度最大的PEDOT滿足此條件，以其製作鈉離子選擇電極的長時間電位穩定性表現最佳，一週之內的電位飄移為58.3 ± 3.1 mV。不過，循環伏安法電鍍的PEDOT:ClO4的雖然贋電容值較低，但是製成固態式離子選擇電極仍然可以大幅提升其長時間電位穩定性。以此一條件製作的鈉離子選擇電極在一週之內的電位飄移僅有5.7 ± 3.1 mV，為本研究中表現最佳者。 | zh_TW |
| dc.description.abstract | Nowadays, solid-state ion-selective electrodes (SS-ISEs) have been a hot research topic because they are advantageous for miniaturization and planarization as well as less influenced by environment. However, the long-term potential stability of SS-ISEs are usually low, hence calibrations are needed before every use. In this study, poly(3,4-ethylenedioxythiophene) (PEDOT) was used as ion-to-electron transducer (IET) in SS-ISEs. We aimed to enhance the long-term potential stability of SS-ISEs by tuning the parameters of its manufacturing process, including casting method of ion-selective membrane (ISM) as well as thickness, counter ion and electrodeposition method of IET. First of all, changing fabrication method of ISM reduced its pore size, which significantly decelerated water leaking into the SS-ISE, hence easing the water layer effect of SS-ISE. Secondly, in an IET, signal transfer between ion and electron is related to the redox reaction on the surface of PEDOT. Thus, electrochemical properties of PEDOT has a great effect on the potential stability of SS-ISEs. In general, the IETs suitable for SS-ISEs are those with high electrochemical stability, high pseudocapacitance and low charge transfer resistance. When constant potential method was used as electrodeposition method, the thickest PEDOT with as ClO4- counter ion met the requirements, and Na+-SS-ISE with it had the lowest long-term potential drift of 58.3 ± 3.1 mV in one week. On the other hand, although PEDOT:ClO4 electrodeposited using CV method had lower pseudocapacitance, the long-term potential stability of Na+-SS-ISE with it was enhanced drastically. Its long-term potential drift was merely 5.7 ± 3.1 mV in one week, which is the best in the whole study. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T04:34:39Z (GMT). No. of bitstreams: 1 ntu-107-R05631016-1.pdf: 11654087 bytes, checksum: 2211e0cfdc0e4e3bf9b5c3b2e555b9fe (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 致謝 i
摘要 ii Abstract iii 目錄 iv 圖目錄 ix 表目錄 xii 符號說明 xiii 第一章 緒論 1 1.1 前言 1 1.2 研究動機 2 1.3 研究目的 3 1.4 研究架構 4 第二章 文獻探討 5 2.1 離子選擇電極發展 5 2.2 固態式離子選擇電極感測原理 10 2.3 離子電子傳導層 14 2.3.1 贋電容型離子電子傳導層 15 2.3.2 電雙層電容型離子電子傳導層 17 2.4 免校正固態式離子選擇電極與電位穩定性調控參數 19 2.4.1 導電高分子離子電子傳導層的厚度 21 2.4.2 導電高分子離子電子傳導層的相對離子種類 22 2.4.3 導電高分子離子電子傳導層電鍍方法 24 2.5 PEDOT在固態式離子選擇電極上的應用 25 第三章 研究材料與方法 27 3.1 實驗儀器與設備 27 3.2 實驗藥品 28 3.3 鈉離子固態式離子選擇電極製作 29 3.3.1 網版印刷碳電極製作 29 3.3.2 PEDOT離子電子傳導層製作 32 3.3.3 鈉離子選擇薄膜製作 33 3.4 離子選擇薄膜分析 35 3.4.1 掃描式電子顯微鏡表面分析 35 3.4.2 共軛焦顯微鏡分析水分子滲透 35 3.5 PEDOT離子電子傳導層分析 35 3.5.1 掃描式電子顯微鏡表面分析 35 3.5.2 循環伏安法分析 35 3.6 鈉離子選擇電極感測表現分析 36 3.6.1 開環路電位量測 36 3.6.2 選擇性分析 36 3.6.3 平衡時間分析 37 3.6.4 電化學阻抗頻譜分析 37 3.6.5 計時電位法分析水層效應 38 3.6.6 長時間電位穩定性測試 39 第四章 結果與討論 40 4.1 離子選擇薄膜製備方法探討 40 4.1.1 離子選擇薄膜結構分析 40 4.1.1.1 掃描式電子顯微鏡表面分析 40 4.1.1.2 共軛焦顯微鏡分析水分子滲透 41 4.1.2 鈉離子選擇電極感測表現分析 43 4.1.2.1 開環路電位量測 43 4.1.2.2 選擇性分析 45 4.1.2.3 平衡時間分析 48 4.1.2.4 計時電位法分析水層效應 49 4.1.3 小結 52 4.2 PEDOT離子電子傳導層厚度探討 53 4.2.1 PEDOT離子電子傳導層分析 53 4.2.1.1 循環伏安法分析 53 4.2.2 鈉離子選擇電極感測表現分析 55 4.2.2.1 開環路電位量測 55 4.2.2.2 電化學阻抗頻譜分析 58 4.2.2.3 長時間電位穩定性測試 60 4.2.3 小結 61 4.3 PEDOT離子電子傳導層相對離子種類探討 62 4.3.1 PEDOT離子電子傳導層分析 62 4.3.1.1 掃描式電子顯微鏡表面分析 62 4.3.1.2 循環伏安法分析 64 4.3.2 鈉離子選擇電極感測表現分析 67 4.3.2.1 開環路電位量測 67 4.3.2.2 電化學阻抗頻譜分析 69 4.3.2.3 長時間電位穩定性測試 71 4.3.3 小結 72 4.4 離子電子傳導層電鍍方法探討 73 4.4.1 PEDOT離子電子傳導層分析 73 4.4.1.1 掃描式電子顯微鏡表面分析 73 4.4.1.2 循環伏安法分析 75 4.4.2 鈉離子選擇電極感測表現分析 79 4.4.2.1 開環路電位量測 79 4.4.2.2 電化學阻抗頻譜分析 81 4.4.2.3 長時間電位穩定性測試 82 4.4.2.4 小結 83 第五章 結論與未來展望 84 5.1 結論 84 5.2 未來展望 85 參考文獻 86 附錄 94 附錄一 不同離子選擇薄膜的鈉離子選擇電極對干擾離子的選擇性分析 94 附錄二 不同實驗條件PEDOT的剖面分析 95 附錄三 不同實驗方法PEDOT:ClO4接觸角分析 97 附錄四 X射線光電子能譜分析 98 附錄五 傅里葉轉換紅外光譜分析 105 附錄六 PEDOT:PSS與PEDOT:ClO4的離子交換性質分析 107 附錄七 計時電位法分析不同相對離子的PEDOT製成鈉離子選擇電極的水層效應 108 | |
| dc.language.iso | zh-TW | |
| dc.subject | 固態式離子選擇電極 | zh_TW |
| dc.subject | 免校正 | zh_TW |
| dc.subject | 長時間電位穩定性 | zh_TW |
| dc.subject | 4-乙烯二氧?吩) | zh_TW |
| dc.subject | 聚(3 | zh_TW |
| dc.subject | 離子電子傳導層 | zh_TW |
| dc.subject | ion-to-electron transducer | en |
| dc.subject | calibration-free | en |
| dc.subject | long-term potential stability | en |
| dc.subject | 4-ethylenedioxythiophene) | en |
| dc.subject | poly(3 | en |
| dc.subject | solid-state ion-selective electrode | en |
| dc.title | "調控聚(3,4-乙烯二氧噻吩)傳導層電鍍製程以提升固態式離子選擇電極長時間電位穩定性" | zh_TW |
| dc.title | Enhancing Long-Term Potential Stability of a Solid-State Ion-Selective Electrode via Tuning Electrodeposition of a Poly(3,4-ethylenedioxythiophene) Transducer | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 何國川(Kuo-Chuan Ho),林正嵐(Cheng-Lan Lin),廖英志(Ying-Chih Liao),謝博全(Po-Chuan Hsieh) | |
| dc.subject.keyword | 固態式離子選擇電極,離子電子傳導層,聚(3,4-乙烯二氧?吩),長時間電位穩定性,免校正, | zh_TW |
| dc.subject.keyword | solid-state ion-selective electrode,ion-to-electron transducer,poly(3,4-ethylenedioxythiophene),long-term potential stability,calibration-free, | en |
| dc.relation.page | 110 | |
| dc.identifier.doi | 10.6342/NTU201802756 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2018-08-10 | |
| dc.contributor.author-college | 生物資源暨農學院 | zh_TW |
| dc.contributor.author-dept | 生物產業機電工程學研究所 | zh_TW |
| 顯示於系所單位： | 生物機電工程學系 | |
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