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標題: | 線性及星狀寡糖嵌段共聚高分子電阻式記憶體之研究 Investigation of Resistive Memory Devices Based on Linear and Star Shaped Oligosaccharide Block Copolymers |
作者: | Chao-Wei Huang 黃昭維 |
指導教授: | 陳文章 |
關鍵字: | 星狀高分子,嵌段共聚高分子,醣類,記憶體元件,高分子型態, star polymer,block copolymer,carbohydrate,memory device,morphology, |
出版年 : | 2018 |
學位: | 碩士 |
摘要: | 隨著無機電子元件在製程技術和研究上趨於飽和,高分子材料於各種原件上的應用逐漸蓬勃,包括有機半導體、發光顯示器、記憶體等,引發廣泛的討論與研究,其中又以能夠自組裝的嵌段共聚高分子最引各界注目。嵌段共聚高分子擁有極大的功能性設計自由,又可以利用簡易例如加熱或暴露於高溶劑蒸氣壓等的方式控制其自組裝的奈米結構,為未來的元件架構以及型態帶來很大的可造空間。
此論文探討嵌段共聚高分子MH-b-PS薄膜的各種可能為結構及型態。此研究中所利用的MH-b-PS結構除了較常見的線性結構外,還包括了三隻手臂以及六隻手臂的星狀結構。除了分子結構本身對得到各種薄膜中奈米結構的製程影響外,其對基於此MH-b-PS嵌段共聚高分子所組成的記憶體元件表現是此研究的重點。麥芽七糖MH寡聚物鏈段是構成電子傳導路徑的主要成分,而MH鏈段在PS中的結構以及向性,對記憶體元件的表現具有極大的影響力,勝制可以在相同材料架構下創造出不同的記憶體的表現。根據文獻,當使用純的麥芽七糖作為電子捕捉層時,電阻式記憶體的表現屬於一次寫入多次讀取式記憶體,而當嵌段共聚高分子中麥芽七糖的微結構呈現隨機排列的球、直立的柱或水平的柱狀結構時,記憶體的表現將為隨機存取式記憶體、一次寫入多次讀取式記憶體或快閃式記憶體。在此研究中發現,除了麥芽七糖的微結構外,高分子本身的構造也對溶劑退火條件及過程和元件表現有影響,尤其是擁有直立柱狀為結構的電阻式記憶體元件,隨著高分子手臂數的增加,元件的記憶體揮發性也會跟著升高。此外,當使用這系列的嵌段共聚高分子製作電晶體式記憶體元件,元件的記憶窗口也會受麥芽七糖微結構以及高分子構造顯著的影響。 As physical limitations in modern day inorganic electronic devices becomes more prominent, much research effort has been put into seeking new material alternatives, one of the rising stars being polymers. With mechanical and optical properties that are desirable in future mobile devices and the near unlimited possibility in rational molecular design, polymer provides a versatility that is unique to its nature. Therefore, this thesis mainly focuses on incorporating polymer materials into memory devices and studies how the molecular architecture and thin film nanostructure can impact the manifestation of memory behaviors. The memory behaviors of green electrets-based organic resistive memory devices with respect to molecular architectures and film morphologies were reported. Using the block copolymer maltoheptaose-block-polystyrene (MH-b-PS) of linear, 3-arm star, and 6-arm star architectures, the hydrophilic MH sugar moiety served as the electron-trapping component while the hydrophilic polystyrene served as the tunneling matrix. By changing the component of the co-solvent used and exposure time for solvent annealing, one can rearrange the distribution of the MH domains and create different morphologies and orientations, including random spheres, vertical cylinders, and horizontal cylinders.. Bulk pure MH films have been reported to exhibit WORM behaviors when fabricated into resistive-type memory devices. However, when the MH domains in the block copolymer adopts the morphologies of random spheres, vertical cylinders, or horizontal cylinders, the device can demonstrate memory behaviors of DRAM, WORM, and flash for the linear block copolymers respectively. It has also been observed that each molecular architectures responded differently to the solvent annealing treatments in terms of obtainable nanostructures and the manifestation of memory behaviors, especially for the resistive-type memory devices with vertical cylindrical MH morphology, where the volatility of the memory was affected by the number of arms in the polymer. Furthermore, when using the block copolymers to fabricate transistor-type memories, the memory window of the devices could be manipulated by controlling the morphology of the MH nanodomains and using different molecular architectures to change the MH exposure at the polymer-pentacene interface. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/70238 |
DOI: | 10.6342/NTU201803407 |
全文授權: | 有償授權 |
顯示於系所單位: | 化學工程學系 |
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