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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳永芳 | |
dc.contributor.author | Yi-Rou Liou | en |
dc.contributor.author | 劉怡柔 | zh_TW |
dc.date.accessioned | 2021-06-17T03:40:12Z | - |
dc.date.available | 2023-03-05 | |
dc.date.copyright | 2018-03-05 | |
dc.date.issued | 2018 | |
dc.date.submitted | 2018-02-07 | |
dc.identifier.citation | Chapter 1
1. Pleros, N. et al. Optical Interconnect and Memory Technologies for Next Generation Computing. IEEE 3–6 (2016). 2. Gu, M., Li, X. & Cao, Y. Optical storage arrays : a perspective for future big data storage. Light Sci. Appl. 3, (2014). 3. Gubbi, J., Buyya, R., Marusic, S. & Palaniswami, M. Internet of Things (IoT): A vision, architectural elements, and future directions. Futur. Gener. Comput. Syst. 29, 1645–1660 (2013). 4. Dong, X. et al. A Circuit-Level Performance , Energy, and Area Model for Emerging Nonvolatile Memory. IEEE Trans. Comput. 31, 994–1007 (2012). 5. 李明道. The introduction of Memory Devices. Natl. Nano Device Lab. Nano Commun. 22, 2–6 (2015). 6. Wang, Z. et al. MOCA: An Inter/Intra-Chip Optical Network for Memory. Proc. - Des. Autom. Conf. 1–6 (2017). 7. Huang, A. Architectural Considerations Involved in the Design of an Optical Digital Computer. Proc. IEEE 72, 780–786 (1984). 8. Dajczgewand, J. et al. Optical memory bandwidth and multiplexing capacity in the erbium telecommunication window. New J. Phys. 17, (2015). 9. Hill, M. T. et al. A fast low-power optical memory based on coupled micro-ring lasers. Nature 432, 206–209 (2004). 10. Reim, K. F. et al. Towards high-speed optical quantum memories. Nat. Photonics 4, 218–221 (2010). 11. Ríos, C. et al. Integrated all-photonic non-volatile multi-level memory. Nat. Photonics 9, 725–732 (2015). 12. Leydecker, T. et al. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend. Nat. Nanotechnol. 11, 769–776 (2016). 13. Gemayel, M. E. et al. Optically switchable transistors by simple incorporation of photochromic systems into small-molecule semiconducting matrices. Nat. Commun. 6, 1–8 (2015). 14. Feldmann, J. et al. Calculating with light using a chip-scale all-optical abacus. Nat. Commun. 8, 1256 (2017). 15. Lee, J. et al. Monolayer optical memory cells based on artificial trap-mediated charge storage and release. Nat. Commun. 8, 14734 (2017). 16. Ishiguro, Y., Hayakawa, R., Yasuda, T., Chikyow, T. & Wakayama, Y. Unique device operations by combining optical-memory effect and electrical-gate modulation in a photochromism-based dual-gate transistor. ACS Appl. Mater. Interfaces 5, 9726–9731 (2013). Chapter 2 1. Yuan, F. et al. Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer. ACS Nano 11, 4097–4104 (2017). 2. Ling, H. et al. Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact. Adv. Mater. 1701333, 1–9 (2017). 3. Simanjuntak, F. M., Panda, D., Wei, K.-H. & Tseng, T.-Y. Status and Prospects of ZnO-Based Resistive Switching Memory Devices. Nanoscale Res. Lett. 11, 368 (2016). 4. Wong, H. S. P. et al. Metal-oxide RRAM. Proc. IEEE 100, 1951–1970 (2012). 5. Waser, R., Dittmann, R., Staikov, C. & Szot, K. Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009). 6. Lin, X. et al. Bipolar resistive switching characteristics in LaTiO3 nanosheets. RSC Adv. 4, 18127–18131 (2014). 7. PAN, F. et al. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges. Prog. Nat. Sci. Mater. Int. 20, 1–15 (2010). 8. Nakamura, S. Nobel Lecture: Background Story of the Invention of Efficient Blue InGaN Light Emitting Diodes. 69–95 (2014). 9. Zhuo, X. J. et al. Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells. Opt. Commun. 325, 129–134 (2014). 10. Chen, L.-Y. et al. High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes. Opt. Express 18, 7664–7669 (2010). 11. Chang, H. J. et al. Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters. Opt. Express 15, 9357–65 (2007). 12. Stolyarova, E. et al. High-resolution scanning tunneling microscopy imaging of mesoscopic graphene sheets on an insulating surface. Proc. Natl. Acad. Sci. U. S. A. 104, 9209–9212 (2007). 13. Novoselov, K. S. et al. Electric Field Effect in Atomically Thin Carbon Films. Science 306, 666–669 (2004). 14. Zhang, Y., Zhang, L. & Zhou, C. Review of chemical vapor deposition of graphene and related applications. Acc. Chem. Res. 46, 2329–2339 (2013). 15. Morgan, L., Chafe, W., Mendenhall, W. & Marcus, R. Honeycomb Carbon: A Review of Graphene. Chem. Rev. 110, 132–145 (2009). 16. Lee, C., Wei, X., Kysar, J. W. & Hone, J. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene. Science 321, 385–388 (2008). 17. Yazdi, G., Iakimov, T. & Yakimova, R. Epitaxial Graphene on SiC: A Review of Growth and Characterization. Crystals 6, 53 (2016). 18. Gogotsi, Y. & Simon, P. The eletronic properties of graphene. Science 334, 917–918 (2011). 19. Choi, W., Lahiri, I., Seelaboyina, R. & Kang, Y. S. Synthesis of graphene and its applications: A review. Crit. Rev. Solid State Mater. Sci. 35, 52–71 (2010). 20. Schultz, B. J., Dennis, R.V., Lee, V. & Banerjee, S. An electronic structure perspective of graphene interfaces. Nanoscale 6, 3444 (2014). 21. Nair, R. R. et al. Fine structure constant defines visual transparency of graphene. Science 320, 1308 (2008). 22. Hwang, I. et al. Wide-Spectral/Dynamic-Range Skin-Compatible Phototransistors Enabled by Floated Heterojunction Structures with Surface Functionalized SWCNTs and Amorphous Oxide Semiconductors. Nanoscale (2017). 23. Conley, J. F. Instabilities in amorphous oxide semiconductor Thin-Film transistors. IEEE Trans. Device Mater. Reliab. 10, 460–475 (2010). 24. Leydecker, T. et al. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend. Nat. Nanotechnol. 11, 769–775 (2016). 25. Dutta, S. & Narayan, K. S. Gate-voltage control of optically-induced charges and memory effects in polymer field-effect transistors. Adv. Mater. 16, 2151–2155 (2004). 26. Theodorou, D. E. & Symeonidis, C. I. Persistent photoconductivity in semiconductors with defect clusters. Phys. Rev. B 37, 10854–10857 (1988). 27. Awad, A. M., Ghany, N. A. A. & Dahy, T. M. Removal of tarnishing and roughness of copper surface by electropolishing treatment. Appl. Surf. Sci. 256, 4370–4375 (2010). 28. Raman, C.V. A new radiation. Proc. Indian Acad. Sci. - Sect. A 37, 333–341 (1953). Chapter 3 1. Lee, S., Sohn, J., Jiang, Z., Chen, H. Y. & Philip Wong, H. S. Metal oxide-resistive memory using graphene-edge electrodes. Nat. Commun. 8407 (2015). 2. Wong, H. S. P. et al. Metal-oxide RRAM. Proc. IEEE 100, 1951–1970 (2012). 3. Li, Y. et al. An overview of resistive random access memory devices. Chinese Science Bulletin 56, 3072–3078 (2011). 4. Yao, J., Sun, Z., Zhong, L., Natelson, D. & Tour, J. M. Resistive switches and memories from silicon oxide. Nano Lett. 10, 4105–4110 (2010). 5. Waser, R., Dittmann, R., Staikov, C. & Szot, K. Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009). 6. Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28–36 (2008). 7. Maikap, S., Jana, D., Dutta, M. & Prakash, A. Self-compliance RRAM characteristics using a novel W/ TaOx/TiN structure. Nanoscale Res. Lett. 9, 1–6 (2014). 8. Lin, C. C., Wu, Y. H., Chang, Y. T. & Sun, C. E. Simplified ZrTiOx-based RRAM cell structure with rectifying characteristics by integrating Ni/n+ -Si diode. Nanoscale Res. Lett. 9, 275 (2014). 9. Li, Y. T. et al. Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application. in 2013 5th IEEE International Memory Workshop, IMW 2013 184–187 (2013). doi:10.1109/IMW.2013.6582130 10. Govoreanu, B. et al. 10×10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. in Technical Digest - International Electron Devices Meeting, IEDM 729–732 (2011). doi:10.1109/IEDM.2011.6131652 11. Lee, M.-J. et al. Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory. Adv. Funct. Mater. 19, 1587–1593 (2009). 12. Lee, M. J. et al. Two series oxide resistors applicable to high speed and high density nonvolatile memory. Adv. Mater. 19, 3919–3923 (2007). 13. Ahn, S. et al. Stackable All-Oxide-Based Nonvolatile Memory With Al2O3 Antifuse and p-CuOx / n-InZnOx Diode. IEEE Electron Device Lett. 30, 550–552 (2009). 14. Liu, W., Tran, X. A., Fang, Z., Xiong, H. D. & Yu, H. Y. A self-compliant one-diode-one-resistor bipolar resistive random access memory for low power application. IEEE Electron Device Lett. 35, 196–198 (2014). 15. Yu, S., Chen, H. Y., Gao, B., Kang, J. & Wong, H. S. P. HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. ACS Nano 7, 2320–2325 (2013). 16. Deng, Y. et al. RRAM crossbar array with cell selection device: A device and circuit interaction study. IEEE Trans. Electron Devices 60, 719–726 (2013). 17. Kim, K. H. et al. A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications. Nano Lett. 12, 389–395 (2012). 18. Cho, B. et al. Rewritable switching of one diode-one resistor nonvolatile organic memory devices. Adv. Mater. 22, 1228–1232 (2010). 19. Linn, E., Rosezin, R., Kügeler, C. & Waser, R. Complementary resistive switches for passive nanocrossbar memories. Nat. Mater. 9, 403–6 (2010). 20. Nau, S., Sørdal, V. B., Wolf, C., Sax, S. & List-kratochvil, E. J. W. Monolithically integrated organic resistive switches for luminance and emission color manipulation in polymer light emitting diodes. Appl. Phys. Lett. 107, (2015). 21. Chang, C. W. et al. Electrically and optically readable light emitting memories. Sci. Rep. 4, 5121 (2014). 22. Ma, L., Liu, J., Pyo, S. & Yang, Y. Organic bistable light-emitting devices. Appl. Phys. Lett. 80, (2002). 23. Chen, C.-T. et al. Enhancement of emission characteristics of cadmium-free ZCIS/ZnS/SiO2 quantum dots by Au nanoparticles. Appl. Phys. Lett. 101, 41908 (2012). 24. Zhuo, X. J. et al. Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells. Opt. Commun. 325, 129–134 (2014). 25. Chen, L.-Y. et al. High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes. Opt. Express 18, 7664–7669 (2010). 26. Chang, H. J. et al. Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters. Opt. Express 15, 9357–65 (2007). 27. Skierbiszewski, C. et al. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy. Appl. Phys. Lett. 86, (2005). 28. Ko, Y., Song, J., Leung, B., Han, J. & Cho, Y. Multi-color broadband visible light source via GaN hexagonal annular structure. Sci. Rep. 4, 5514 (2014). 29. Yin, S. et al. Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate. Opt. Express 22, 105 (2014). 30. Bae, S. Y., Kong, D. J., Lee, J. Y., Seo, D. J. & Lee, D. S. Size-controlled InGaN/GaN nanorod array fabrication and optical characterization. Opt. Express 21, 16854 (2013). 31. Hong, Y. J. et al. Visible-color-tunable light-emitting diodes. Adv. Mater. 23, 3284–3288 (2011). 32. Nayfeh, O. M. Radio-frequency transistors using chemical-vapor-deposited monolayer graphene: Performance, doping, and transport effects. IEEE Trans. Electron Devices 58, 2847–2853 (2011). 33. Ferrari, A. C. et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 1–4 (2006). 34. Yoon, J. H. et al. Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. Adv. Mater. 25, 1987–1992 (2013). 35. Mukherjee, B. & Mukherjee, M. Nonvolatile memory device based on Ag nanoparticle: Characteristics improvement. Appl. Phys. Lett. 94, 10–13 (2009). 36. Kondo, T. et al. A nonvolatile organic memory device using ITO surfaces modified by Ag-nanodots. Adv. Funct. Mater. 18, 1112–1118 (2008). 37. Sze, S. M. Physics of Semiconductor Devices, 2nd ed. New York Wiley 868 (1981). 38. Son, D. I. et al. Flexible organic bistable devices based on graphene embedded in an insulating poly(methyl methacrylate) polymer layer. Nano Lett. 10, 2441–2447 (2010). 39. Waser, R. Electrochemical and thermochemical memories. in Technical Digest - International Electron Devices Meeting, IEDM 1–4 (2008). 40. Río, C. et al. Integrated all-photonic non-volatile multi-level memory. Nat. Photonics 9, 725–732 (2015). 41. Sun, P. et al. Thermal crosstalk in 3-dimensional RRAM crossbar array. Sci. Rep. 5, 13504 (2015). 42. Seok, J. Y. et al. A review of three-dimensional resistive switching cross-bar array memories from the integration and materials property points of view. Adv. Funct. Mater. 24, 5316–5339 (2014). 43. Wang, G. et al. High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array. Adv. Mater. 25, 4789–4793 (2013). 44. Ji, L., Chang, Y., Fowler, B. & Chen, Y. Integrated One Diode − One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography. Nano Lett. 14, 813–818 (2014). 45. Yao, J. et al. Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene. Nat. Commun. 3, 1101 (2012). 46. Baierl, D. et al. A hybrid CMOS-imager with a solution-processable polymer as photoactive layer. Nat. Commun. 3, 1175 (2012). 47. Bigas, M., Cabruja, E., Forest, J. & Salvi, J. Review of CMOS image sensors. Microelectronics J. 37, 433–451 (2006). 48. ElGamal, A. & Eltoukhy, H. CMOS Image Sensors. Circuits Devices Mag. IEEE 21, 6–20 (2005). 49. Chen, J. Y. et al. Efficient spin-light emitting diodes based on InGaN/GaN quantum disks at room temperature: a new self-polarized paradigm. Nano Lett. 14, 3130–3137 (2014). Chapter 4 1. M. Wuttig, H. Bhaskaran, and T. Taubner, 'Phase-change materials for non-volatile photonic applications,' Nat. Photonics 11(8), 465–476 (2017). 2. Z. Wang, Z. Pang, P. Yang, J. Xu, X. Chen, R. K. V. Maeda, Z. Wang, L. H. K. Duong, H. Li, and Z.Weng, 'MOCA: An Inter/Intra-Chip Optical Network for Memory,' Proc. - Des. Autom. Conf. 1–6 (2017). 3. T. Leydecker, M. Herder, E. Pavlica, G. Bratina, S. Hecht, E. Orgiu, and P. Samorì, 'Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend,' Nat. Nanotechnol. 11(9), 769–775 (2016). 4. N. Pleros, S. Pitris, C. Vagionas, P. Maniotis, T. Alexoudi, A. Miliou, and G. T. Kanellos, 'Optical Interconnect and Memory Technologies for Next Generation Computing,' IEEE 3–6 (2016). 5. C. Ríos, M. Stegmaier, P. Hosseini, D. Wang, T. Scherer, C. D. Wright, H. Bhaskaran, and W. H. P. Pernice, 'Integrated all-photonic non-volatile multi-level memory,' Nat. Photonics 9(11), 725–732 (2015). 6. A. N. Tait, T. F. deLima, E. Zhou, A. X. Wu, M. A. Nahmias, B. J. Shastri, and P. R. Prucnal, 'Photonic synaptic device capable of optical memory and logic operations,' CLEO Sci. Innov. 2, 7–8 (2016). 7. J. F. Song, X. S. Luo, A. E. J. Lim, C. Li, Q. Fang, T. Y. Liow, L. X. Jia, X. G. Tu, Y. Huang, H. F. Zhou, and G. Q. Lo, 'Integrated photonics with programmable non-volatile memory,' Sci. Rep. 6, 1–7 (2016). 8. M. T. Hill, H. J. S. Dorren, T. deVries, X. J. M. Leijtens, J. H. denBesten, B. Smalbrugge, Y.-S. Oei, H. Binsma, G.-D. Khoe, and M. K. Smit, 'A fast low-power optical memory based on coupled micro-ring lasers,' Nature 432(7014), 206–209 (2004). 9. A. Huang, 'Architectural Considerations Involved in the Design of an Optical Digital Computer,' Proc. IEEE 72(7), 780–786 (1984). 10. J. Socratous, K. K. Banger, Y. Vaynzof, A. Sadhanala, A. D. Brown, A. Sepe, U. Steiner, and H. Sirringhaus, 'Electronic structure of low-temperature solution-processed amorphous metal oxide semiconductors for thin-film transistor applications,' Adv. Funct. Mater. 25(12), 1873–1885 (2015). 11. A. Nathan, S. Lee, S. Jeon, and J. Robertson, 'Amorphous oxide semiconductor TFTs for displays and imaging,' J. Disp. Technol. 10(11), 917–927 (2014). 12. T. Kamiya, K. Nomura, and H. Hosono, 'Present status of amorphous In–Ga–Zn–O thin-film transistors,' Sci. Technol. Adv. Mater. 11(4), 44305 (2010). 13. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, 'Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,' Nature 432(7016), 488–492 (2004). 14. M. Mativenga, D. Geng, B. Kim, and J. Jang, 'Fully transparent and rollable electronics,' ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015). 15. S. S. Lee, S. H. Jeon, R. Chaji, and A. Nathan, 'Transparent semiconducting oxide technology for touch free interactive flexible displays,' Proc. IEEE 103(4), 644–664 (2015). 16. I. Hwang, J. Kim, M. Lee, M.-W. Lee, H.-J. Kim, H.-I. Kwon, D. K. Hwang, M. Kim, H. Yoone, 'Wide-Spectral/Dynamic-Range Skin-Compatible Phototransistors Enabled by Floated Heterojunction Structures with Surface Functionalized SWCNTs and Amorphous Oxide Semiconductors,' Nanoscale (2017). 17. A. Kiazadeh, H. L. Gomes, P. Barquinha, J. Martins, A. Rovisco, J.V. Pinto, R. Martins, and E. Fortunato, 'Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors,' Appl. Phys. Lett. 109(5), (2016). 18. J. F. Conley, 'Instabilities in amorphous oxide semiconductor Thin-Film transistors,' IEEE Trans. Device Mater. Reliab. 10(4), 460–475 (2010). 19. D. H. Kim and J. T. Park, 'Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination,' Microelectron. Reliab. 55(9–10), 1811–1814 (2015). 20. J. M. Kwon, J. Jung, Y. S. Rim, D. L. Kim, and H. J. Kim, 'Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide,' ACS Appl. Mater. Interfaces 6(5), 3371–3377 (2014). 21. S. Lee, M. Mativenga, and J. Jang, 'Removal of negative-bias-illumination-stress instability in amorphous-InGaZnO thin-film transistors by top-gate offset structure,' IEEE Electron Device Lett. 35(9), 930–932 (2014). 22. S. Jeon, S.-E. Ahn, I. Song, C. J. Kim, U.-I.Chung, E. Lee, I. Yoo, A. Nathan, S. Lee, J. Robertson, and K. Kim, 'Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays,' Nat. Mater. 11(4), 301–5 (2012). 23. M. Lee, W. Lee, S. Choi, J. W. Jo, J. Kim, S. K. Park, and Y. H. Kim, 'Brain-inspired photonic neuromorphic devices using photodynamic amorphous oxide semiconductors and their persistent Photoconductivity,' Adv. Mater. 29(28), 1–8 (2017). 24. S. Qin, F. Wang, Y. Liu, Q. Wan, X. Wang, Y. Xu, Y. Shi, X. Wang, and R. Zhang, 'A light-stimulated neuromorphic device based on graphene hybrid phototransistor,' 2D Mater. 4(3), (2016). 25. D. Kuzum, S. Yu, and H. S. P. Wong, 'Synaptic electronics: materials, devices and applications,' Nanotechnology 24(38), 382001 (2013). 26. H. Pang, T. Chen, G. Zhang, B. Zeng, and Z. M. Li, 'An electrically conducting polymer/graphene composite with a very low percolation threshold,' Mater. Lett. 64(20), 2226–2229 (2010). 27. J. Zhang, P. Dong, Y. Gao, C. Sheng, and X. Li, 'Performance enhancement of ZITO thin-film transistors via graphene bridge layer by sol-gel combustion process,' ACS Appl. Mater. Interfaces 7(43), 24103–24109 (2015). 28. M. K. Dai, Y. R. Liou, J. T. Lian, T. Y. Lin, and Y. F. Chen, 'Multifunctionality of giant and long-lasting persistent photoconductivity: semiconductor–conductor transition in graphene nanosheets and amorphous InGaZnO hybrids,' ACS Photonics 2(8), 1057–1064 (2015). 29. Y. R. Liou, G. Haider, S. Y. Cai, C. L. Wu, T. Y. Lin, and Y. F. Chen, 'High-performance light-emitting memories: multifunctional devices for unveiling Information by optical and electrical detection,' Adv. Opt. Mater. 4, 1744–1749 (2016). 30. C. W. Chang, W. C. Tan, M. L. Lu, T. C. Pan, Y. J. Yang, and Y. F. Chen, 'Electrically and optically readable light emitting memories.,' Sci. Rep. 4, 5121 (2014). 31. R. X. G. Ferreira, E. Xie, J. J. D. Mckendry, S. Rajbhandari, H. Chun, G. Faulkner, S. Watson, A. E. Kelly, E. Gu, R. VPenty, I. H. White, D. C. O. Brien, and M. D. Dawson, 'High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications,' 28(19), 2023–2026 (2016). 32. Z. Liu, W. C. Chong, K. M. Wong, and K. M. Lau, 'GaN-based LED micro-displays for wearable applications,' Microelectron. Eng. 148, 98–103 (2015). 33. S. Yin, C. Wang, W. Zhu, J. Yao, J. Zou, X. Lin, and C. Luo, 'Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate.,' Opt. Express 22(August), 105 (2014). 34. S. Nakamura and M. R. Krames, 'History of gallium-nitride-based light-emitting diodes for illumination,' Proc. IEEE 101(10), 2211–2220 (2013). 35. S. Nakamura, 'The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,' Science 281(5379), 956–961 (1998). 36. D. A. Neaman, Semiconductor Physics and Devices: Basic Principles, Fourth Edition (2012). 37. X. Liu, C. Wang, B. Cai, X. Xiao, S. Guo, Z. Fan, J. Li, X. Duan, and L. Liao, 'Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors,' Nano Lett. 12(7), 3596–3601 (2012). 38. S. Lee, A. Nathan, S. Jeon, and J. Robertson, 'Oxygen defect-induced metastability in oxide semiconductors probed by gate pulse spectroscopy,' Sci. Rep. 5(October), 14902 (2015). 39. S. Jeon, I. Song, S. Lee, B. Ryu, S. E. Ahn, E. Lee, Y. Kim, A. Nathan, J. Robertson, and U. I. Chung, 'Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects,' Adv. Mater. 26(41), 7102–7109 (2014). 40. H. L. Lu, Z. M. Liao, L. Zhang, W. T. Yuan, Y. Wang, X. M. Ma, and D. P. Yu, 'Reversible insulator-metal transition of LaAlO3/SrTiO3 interface for nonvolatile memory,' Sci. Rep. 3(1), 2870 (2013). 41. S. E. Ahn, S. Jeon, Y. W. Jeon, C. Kim, M. J. Lee, C. W. Lee, J. Park, I. Song, A. Nathan, S. Lee, and U. I. Chung, 'High-performance nanowire oxide photo-thin film transistor,' Adv. Mater. 25(39), 5549–5554 (2013). 42. J. Y. Seok, S. J. Song, J. H. Yoon, K. J. Yoon, T. H. Park, D. E. Kwon, H. Lim, G. H. Kim, D. S. Jeong, and C. S. Hwang, 'A review of three-dimensional resistive switching cross-bar array memories from the integration and materials property points of view,' Adv. Funct. Mater. 24(34), 5316–5339 (2014). 43. Y. Ji, D. F. Zeigler, D. S. Lee, H. Choi, A. K. Y. Jen, H. C. Ko, and T. W. Kim, 'Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture,' Nat. Commun. 4, 1–7 (2013). 44. J. Y. Chen, C. Y. Ho, M. L. Lu, L. J. Chu, K. C. Chen, S. W. Chu, W. Chen, C. Y. Mou, and Y. F. Chen, 'Efficient spin-light emitting diodes based on InGaN/GaN quantum disks at room temperature: a new self-polarized paradigm,' Nano Lett. 14(6), 3130–3137 (2014). 45. S. H. Tan, N. T. Nguyen, Y. C. Chua, and T. G. Kang, 'Oxygen plasma treatment for reducing hydrophobicity of a sealed polydimethylsiloxane microchannel,' Biomicrofluidics 4(3), 1–8 (2010). Chapter 5 1. Pleros, N. et al. Optical interconnect and memory technologies for next generation computing. IEEE 3–6 (2016). 2. Chen, C. W. et al. Visible light communications for the implementation of internet-of-things. Opt. Eng. 55, 60501 (2016). 3. Gu, M., Li, X. & Cao, Y. Optical storage arrays: a perspective for future big data storage. Light Sci. Appl. 3, e177 (2014). 4. Gubbi, J., Buyya, R., Marusic, S. & Palaniswami, M. Internet of Things (IoT): A vision, architectural elements, and future directions. Futur. Gener. Comput. Syst. 29, 1645–1660 (2013). 5. Wang, Z. et al. MOCA: an inter/intra-chip optical network for memory. Proc. Des. Autom. Conf. 1–6 (2017). 6. Huang, A. Architectural Considerations involved in the design of an optical digital computer. Proc. IEEE 72, 780–786 (1984). 7. Wuttig, M., Bhaskaran, H. & Taubner, T. Phase-change materials for non-volatile photonic applications. Nat. Photonics 11, 465–476 (2017). 8. Feldmann, J. et al. Calculating with light using a chip-scale all-optical abacus. Nat. Commun. 8, 1256 (2017). 9. Dajczgewand, J. et al. Optical memory bandwidth and multiplexing capacity in the erbium telecommunication window. New J. Phys. 17, (2015). 10. Reim, K. F. et al. Towards high-speed optical quantum memories. 4, 218–221 (2009). 11. Hill, M. T. et al. A fast low-power optical memory based on coupled micro-ring lasers. Nature 432, 206–209 (2004). 12. Leydecker, T. et al. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend. Nat. Nanotechnol. 11, 769–775 (2016). 13. Ríos, C. et al. Integrated all-photonic non-volatile multi-level memory. Nat. Photonics 9, 725–732 (2015). 14. DiVentra, M. & Pershin, Y.V. The parallel approach. Nat. Phys. 9, 200–202 (2013). 15. Lee, J. et al. Monolayer optical memory cells based on artificial trap-mediated charge storage and release. Nat. Commun. 8, 14734 (2017). 16. Chen, Y. H. et al. Coherent optical memory with high storage efficiency and large fractional delay. Phys. Rev. Lett. 110, 1–5 (2013). 17. Ishiguro, Y., Hayakawa, R., Yasuda, T., Chikyow, T. & Wakayama, Y. Unique device operations by combining optical-memory effect and electrical-gate modulation in a photochromism-based dual-gate transistor. ACS Appl. Mater. Interfaces 5, 9726–9731 (2013). 18. Burr, G. W. et al. Phase change memory technology. J. Vac. Sci. Technol. B 28, 223–262 (2010). 19. Root, S. E., Savagatrup, S., Printz, A. D., Rodriquez, D. & Lipomi, D. J. Mechanical properties of organic semiconductors for stretchable, highly flexible, and mechanically robust electronics. Chem. Rev. 117, 6467–6499 (2017). 20. Orgiu, E. & Samorì, P. 25th anniversary article: Organic electronics marries photochromism: generation of multifunctional interfaces, materials, and devices. Adv. Mater. 26, 1827–1844 (2014). 21. Yang, Y. & Katz, H. E. Hybrid of P3HT and ZnO@GO nanostructured particles for increased NO2 sensing response. J. Mater. Chem. C 5, 2160–2166 (2017). 22. Song, E. et al. Stretchable and transparent organic semiconducting thin film with conjugated polymer nanowires embedded in an elastomeric matrix. Adv. Electron. Mater. 2, 1–8 (2016). 23. Facchetti, A. π-Conjugated polymers for organic electronics and photovoltaic cell applications. Chem. Mater. 23, 733–758 (2011). 24. Hyun, C. et al. Persistent photoexcitation effect on the poly ( 3-hexylthiophene ) film : Impedance measurement and modeling. Synth. Met. 162, 460–465 (2012). 25. Nougaret, L. et al. Nanoscale design of multifunctional organic layers for low-power high-density memory devices. ACS Nano 8, 3498–3505 (2014). 26. Kang, M. et al. Synergistic high charge-storage capacity for multi-level flexible organic flash memory. Sci. Rep. 5, 12299 (2015). 27. Dutta, S. & Narayan, K. S. Gate-voltage control of optically-induced charges and memory effects in polymer field-effect transistors. Adv. Mater. 16, 2151–2155 (2004). 28. Lee, M. et al. Brain-inspired photonic neuromorphic devices using photodynamic amorphous oxide semiconductors and their persistent Photoconductivity. Adv. Mater. 29, 1–8 (2017). 29. Burgt, Y. et al. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing. Nat. Mater. 16, 414–418 (2017). 30. Tait, A. N. et al. Photonic synaptic device capable of optical memory and logic operations. CLEO Sci. Innov. 2, 7–8 (2016). 31. Stylianakis, M. M. et al. Ternary solution-processed organic solar cells incorporating 2D materials. 2D Mater. 4, (2017). 32. Kim, C. H. & Kymissis, I. Graphene–organic hybrid electronics. J. Mater. Chem. C 5, 4598–4613 (2017). 33. Bonaccorso, F. et al. Functionalized graphene as an electron-cascade acceptor for air-processed organic ternary solar cells. Adv. Funct. Mater. 25, 3870–3880 (2015). 34. Sung, Y. M. et al. Enhanced charge extraction in inverted hybrid photovoltaic cells assisted by graphene nanoflakes. J. Mater. Chem. 21, 17462 (2011). 35. Zhang, Y., Zhang, L. & Zhou, C. Review of chemical vapor deposition of graphene and related applications. Acc. Chem. Res. 46, 2329–2339 (2013). 36. Chen, S., Ho, P., Shiue, R., Chen, C. W. & Wang, W. Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates. Nano Lett. 12, 964–969 (2012). 37. Lee, W. H. et al. Control of graphene field-effect transistors by interfacial hydrophobic self-assembled monolayers. Adv. Mater. 23, 3460–3464 (2011). 38. Wall, M. The raman spectroscopy of graphene and the determination of layer thickness. Thermo Sci. 5 (2011). 39. Chang, H. C. et al. Oxygen adsorption effect on nitrogen-doped graphene electrical properties. Appl. Phys. Express 7, (2014). 40. Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/70039 | - |
dc.description.abstract | 在這個資訊時代,記憶體等相關的存儲設備在物聯網(IoT)、雲端網路和大數據工程的下一代趨勢中,扮演著舉足輕重的光電元件之角色。與電子系統相比,光子系統更具備有高頻寬,低功耗以及高通訊速度的優越特性,而這推動了光記憶體的發展。在本論文中,我們設計並展示了幾種基於半導體和奈米材料之複合材料的光記憶體,相信我們在這裡展示的方法可以作為光通訊發展的關鍵一步,相應的結果被歸類為三個主題,總結如下。
1. 高效能發光記憶體:可藉由光及電性揭示訊號的多功能元件 我們設計、製造並演示了雙穩態發光記憶體(LEM),使其編碼訊號能夠同時用光學及電學的方式去讀取,藉以克服常規記憶體陣列中,訊號在元件之間一個接著一個傳遞的電讀取方式所造成的最大數據傳輸量的限制。為了說明我們的工作原理,樣品結構組成是由石墨烯/二氧化矽/銀奈米顆粒/鋁摻雜氧化鋅的透明可變電阻式記憶體(RRAM)與氮化物半導體多重量子井結構的發光二極體(MQWs LED)串聯在一起,與傳統的可變電阻式記憶體相比,發光記憶體的訊號傳輸不會受到訊號延遲和讀取速度的限制。因此,這種新型元件有機會可以取代傳統的基於電子閱讀的通訊方式,還能很輕易地與現今的顯示科技結合在一起,也為光通訊元件的發展開闢了一條途徑,並擴展了傳統存儲設備的功能。 2. 可光寫入和光電可讀取的長期非揮發記憶體 光學記憶體對於高速、低成本資訊科技的未來發展至關重要,然而目前的光學記憶體仍然受限於元件尺寸難以微縮、沒有閘極控制下的短期非揮發性,而在閘極控制下維持記錄訊號會造成額外的耗能,為了克服這些挑戰,在此研究中,我們利用非晶態氧化銦鎵鋅(a-IGZO)和石墨烯奈米碎片(GNSs)複合材料中具有能保持長期壽命的持久光電導率(PPC)的特性,結合氮化物半導體多重量子井結構的發光二極體(MQWs LED),設計並展示了長期非揮發光學記憶體,用於記錄光學信號並且以電學和光學方式讀取編碼信號(平行讀出過程),為資訊通訊開闢了一條有用的路徑,並改善傳統電記憶體陣列中最大數據傳輸量的限制。因此,此研究可以為光電元件在資訊通訊的未來應用中提供替代的範例。 3.有機材料和石墨烯異質結構的可撓性光轉換記憶體:多層級非揮發光存儲的新平台 具有長期非揮發性質、高速度和低耗能成本的光學記憶體之發展對於未來的資訊時代至關重要。然而目前基於相變材料的光記憶體存在光讀出破壞性過程,耗能和短期非揮發性存儲的問題,除此之外,對於先前所報導的光記憶體來說,要做成適用於可穿戴設備和人工智慧應用上的可撓性元件是較難達成。為了克服這些挑戰性的問題並允許與可撓性基板整合在一起,我們在此研究中設計和展示了,基於石墨烯奈米薄片(GNFs)/聚(3-己基噻吩)(P3HT)複合材料以及石墨烯傳輸層的可撓性光轉換多層級長期非揮發記憶體。此種復合式元件結合了每種材料的獨特性質,使得我們設計的光記憶體可以在0.5伏特的低工作電壓以及紫外光和綠色光照射下,擁有高達196個不同層級狀態、10,000秒以上的非揮發性、10,000次以上的機械彎曲穩定性。我們在這裡所展示的方法不僅為光記憶體的發展提供了一種替代的範例,相信在不久的將來也能輕易地與當前成熟技術相互結合用於實際應用。 | zh_TW |
dc.description.abstract | Towards the era of information, memory devices play a pivotal optoelectronic component in next-generation trends of the internet of things (IoT), cloud networks, and big data engineering. That drives the development of optical memories with the superior features of high bandwidth, low power consumption, and high communication speeds comparing with electronic systems. In this thesis, we have designed and demonstrated several optical memories based on the composites of semiconductors and nanomaterials. It is believed that our approach shown here can serve as a key step for the development of optical communication. The corresponding results are classified as three main topics and summarized as follows.
1. High-Performance Light-Emitting Memories: Multifunctional Devices for Unveiling Information by Optical and Electrical Detection A bistable light emitting memory (LEM) has been designed, fabricated and demonstrated, which enables to read encoded information electrically and optically. This unique feature can overcome the great hurdle in the limitation of the maximum data throughput in the electrical reading of conventional memory array in serial sequence. To illustrate our working principle, transparent resistance random access memory (RRAM) consisting of graphene/SiO2/Ag nanoparticles/Al-doped ZnO is deployed in tandem with light-emitting diode based on nitride semiconductor multiple quantum wells. Compared with conventional RRAM, the signal communication of LEM does not suffer from the interconnect delay and the limited reading speed. Therefore, this new device has the potential in replacing traditional communication based on electrical reading. In addition, it can be easily integrated with current display technologies. It opens up a route for the realization of optical communication devices and extends the functionality of conventional memory devices. 2. Optically writable and photo-electrically readable long-term non-volatile memories Optical memories are vitally important for the future development of high speed and low cost information technologies. However, the current optical memories still suffer from difficulty in scaling-down of size, and short-term non-volatility without the control of gate electrode, which results in an additional power consumption to maintain the encoded signal. To circumvent these challenge issues and achieve an all-optical-communication memory, here, a robust and long-term non-volatile optical memory is designed and demonstrated based on the integration of the composite of amorphous InGaZnO (a-IGZO) and graphene nanosheets (GNSs) with the long lasting lifetime of persistent photoconductivity (PPC) and nitride multiple quantum wells light-emitting diode (MQWs LED) for recording the signal optically and reading the encoded signal both electrically and optically (parallel readout process), which can open up an useful route for the information communication and improve the limitation of maximum data throughput in the conventional electrical memory array. The approach shown here therefore provides an alternative paradigm for the future application of optoelectronics device in information communication. 3. Flexible optical switching memory made with organics and graphene heterostructures: a new platform for multi-level non-volatile optical storage The development of optical memories with the attractive features of long-term non-volatility, high-speed, and low-energy-cost is vitally important for the future information age. However, the current optical memories based on phase-change materials are suffering from the problem of optical readout destructive process, energy-consumption and short-term non-volatile storage. In addition, flexible devices are greatly desirable for the application of wearable devices and smart artificial intelligence, which is still difficult to achieve for the reported optical memories. To overcome these challenge issues and allow the integration with flexible substrates, here, a flexible optical switching multi-level long-term non-volatile memory based on the composite of graphene nanoflakes (GNFs)/poly(3-hexylthiophene) (P3HT) and the transporting layer of graphene has been designed and demonstrated. Based on the integration of all unique properties of every constituent element in the composite device, it enables our designed optical memory with optically switchable memory states up to 196 distinct levels by UV and green light illumination under a low working bias of 0.5 V, a non-volatility over 10,000 sec, and a mechanical stability more than 10,000 bending cycles. Our approach shown here not only provides an alternative paradigm for the development of optical memory, but can also be easily integrated with currently mature technologies for practical application in the near future. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T03:40:12Z (GMT). No. of bitstreams: 1 ntu-107-F00222016-1.pdf: 4586445 bytes, checksum: 7f48f6fd284f4573ac4e143519c10b01 (MD5) Previous issue date: 2018 | en |
dc.description.tableofcontents | 口試委員會審定書 #
誌謝 1 摘 要 2 Abstract 5 List of Publication 8 Contents 11 List of Figures 15 Chapter 1 Introduction 22 1.1 Introduction to memory......... 22 1.1.1 Electrical memory 22 1.1.2 Optical memory 24 1.2 Overview of the dissertation 26 Reference 28 Chapter 2 Theoretical Background and Experiment at Details 30 2.1 Resistance random access memory (RRAM) 30 2.1.1 Resistive switching behaviors 30 2.1.2 Resistive switching mechanisms of oxide-based RRAM 31 2.2 Electroluminescence (EL) 34 2.3 Multiple quantum wells light emitting diode (MQWs LED) 35 2.4 Electrical and optical properties of graphene 35 2.5 Persistent Photoconductivity of semiconductors 38 2.6 Fabrication of chemical vapor deposition (CVD) graphene 40 2.6.1 Copper (Cu) polish 40 2.6.2 Chemical vapor deposition 40 2.6.3 Transfer process 41 2.7 Raman scattering 42 2.8 Scanning electron microscopy (SEM) 44 2.9 Electrical characteristics measurement 45 Reference 47 Chapter 3 High performance light emitting memories: multifunctional devices for unveiling information by optical and electrical detection 50 3.1 Introduction 50 3.2 Results 51 3.2.1 The structure of LEM device. 51 3.2.2 The I-V characteristics of pure RRAM cell. 52 3.2.3 Electrical and optical performance of LEM device. 54 3.3 Summary 56 3.4 Experimental section 57 3.4.1 Device fabrication 57 3.4.2 Characterization and measurements 58 Reference 64 Chapter 4 Optically writable and photo-electrically readable long-term non-volatile memories 69 4.1 Introduction 69 4.2 Results 72 4.2.1 Structure of the device and characteristic of materials. 72 4.2.2 Persistent photoconductivity effect of GNSs/a-IGZO composite. 72 4.2.3 Working mechanism of the device. 74 4.2.4 Switching and retention performance for electrical and optical signal. 76 4.3 Summary 77 4.4 Experimental section 78 4.4.1 Synthesis of GNSs/a-IGZO composites. 78 4.4.2 Device fabrication. 78 4.4.3 Characterization and measurements. 79 Reference 85 Chapter 5 Flexible optical switching memory made with organics and graphene heterostructures: a new platform for multi-level non-volatile optical storage 91 5.1 Introduction 91 5.2 Results 94 5.2.1 Structure, characteristics of materials and photoresponse of the devices. 94 5.2.2 The effect of OTS-treatment and GNFs. 95 5.2.3 Working mechanism of optical switching the memory device. 96 5.2.4 Performance of retention, repeatability, and multi-level of the device. 98 5.2.5 Performance on the flexible polyethylene terephthalate (PET) substrate. 99 5.3 Summary 100 5.4 Experimental section 101 5.4.1 Synthesis of GNFs/P3HT composites. 101 5.4.2 Device fabrication. 101 5.4.3 Characterization and measurements. 102 Reference 109 Chapter 6 Conclusion and perspectives 113 | |
dc.language.iso | en | |
dc.title | 多功能光電記憶元件 | zh_TW |
dc.title | Multifunctional Photoelectrical Memory Devices | en |
dc.type | Thesis | |
dc.date.schoolyear | 106-1 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 邱寬城,林泰源,沈志霖,許芳琪 | |
dc.subject.keyword | 可變電阻式記憶體,多重量子井結構發光二極體,發光記憶體,光通訊,多層級光學記憶體,石墨烯,非晶態氧化銦鎵鋅,聚(3-己基?吩), | zh_TW |
dc.subject.keyword | resistance random access memory (RRAM),multiple quantum wells light emitting diode (MQWs LED),light emitting memory (LEM),optical communication,multi-level optical memory,graphene,amorphous InGaZnO (a-IGZO),poly(3-hexylthiophene) (P3HT), | en |
dc.relation.page | 114 | |
dc.identifier.doi | 10.6342/NTU201800391 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2018-02-08 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理學研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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