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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/68794完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任(Yuh-Renn Wu) | |
| dc.contributor.author | Chen-Ming Chuang | en |
| dc.contributor.author | 莊鎮名 | zh_TW |
| dc.date.accessioned | 2021-06-17T02:35:42Z | - |
| dc.date.available | 2020-08-21 | |
| dc.date.copyright | 2020-08-21 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-08-18 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/68794 | - |
| dc.description.abstract | 以氮化鎵為基底的垂直共振腔面射型雷射因為諸多的優點例如: 低閾值電流、圓形光場等等，使之成為非常受矚目的光源。但是，受到製程中磊晶成長的限制，要達到較低的閾值電流仍是相當困難。另外，光增益的峰值與雷射共振腔的共振波長若彼此無法在頻域區間中對準，會降低垂直共振腔雷射的出光特性。本篇論文中使用光電數值模型以分析雷射元件之光電特性，針對低閾值電流及提升雷射光電特性的設計方法會在本文中討論。此外，共振腔特性和模態增益隨著溫度的變化也會利用數值模擬的方法於本文中討論。最後，將熱效應對雷射特性的影響考慮進設計準則中，提出針對不同元件、環境溫度的優化方法。 | zh_TW |
| dc.description.abstract | Gallium nitride (GaN)-based vertical-cavity surface-emitting laser diodes(VCSELs) become an attractive light source due to numerous advantages, which include low threshold current, circular beam profile, etc.. However, the low threshold current is hard to achieve because a quality epitaxial growth is still crucial. In addition, the misalignment between the gain peak and resonance wavelength would deteriorate the performance of VCSELs. The electro-optical numerical model is used to analyze the properties of device. The design rules to achieve a low threshold current and to enhance the performance of VCSELs are discussed. Moreover, the modal gain and the cavity properties are simulated with varying temperature. The designed principle which considers the thermal effect into the simulation model is presented. The relationships between temperature and both the gain characteristics and cavity properties are proposed. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T02:35:42Z (GMT). No. of bitstreams: 1 U0001-1708202008593900.pdf: 3585831 bytes, checksum: f2fa1652b2c9ee75464036ac62fe6c07 (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | Verification letter . . . . . . . . . . . . . . . . . . . . . . . . . . i Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . ii Chinese Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . iii English Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . iv Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . viii List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . xiii 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Thesis overview . . . . . . . . . . . . . . . . . . . . . . . 3 2 Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Simulation flowchart . . . . . . . . . . . . . . . . . . . . 5 3 Design principle of VCSEL devices . . . . . . . . . . . . . . 7 3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 Reflectivity with different DBR . . . . . . . . . . . . . . 8 3.3 Thickness of cavity . . . . . . . . . . . . . . . . . . . . . 11 3.3.1 Resonance wavelength . . . . . . . . . . . . . . . . 12 3.3.2 Electric field distribution . . . . . . . . . . . . . . 13 3.4 Quantum well in active region . . . . . . . . . . . . . . . 16 3.4.1 Numbers of quantum well . . . . . . . . . . . . . . 17 3.4.2 Width and composition of quantum well . . . . . . 20 3.5 2-D optical simulation . . . . . . . . . . . . . . . . . . . 23 3.6 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4 Thermal effect on VCSEL structure . . . . . . . . . . . . . . 28 4.1 Temperature dependent optical properties . . . . . . . . 29 4.1.1 Resonance wavelength shift . . . . . . . . . . . . . 29 4.1.2 Temperature dependence of properties on DBR mirrors . . . . . . . . . . . . . . . . . . . . . . . . . . 32 4.1.3 Change of confinement factor . . . . . . . . . . . . 33 4.2 Gain peak detuning with resonance wavelength . . . . . 35 4.2.1 Temperature dependent bandgap . . . . . . . . . . 35 4.2.2 Carrier injection in quantum well . . . . . . . . . . 36 4.2.3 Summary . . . . . . . . . . . . . . . . . . . . . . . 38 4.3 Thermal design principle . . . . . . . . . . . . . . . . . . 39 4.3.1 2-D optical simulation . . . . . . . . . . . . . . . . 43 5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 A Appendix Methodology . . . . . . . . . . . . . . . . . . . . . 58 A.1 Homogeneous Plane Wave . . . . . . . . . . . . . . . . . 58 A.2 Multi-layer problems . . . . . . . . . . . . . . . . . . . . 60 A.3 Poisson and drift-diffusion equation solver . . . . . . . . 68 A.4 Localization landscape theory . . . . . . . . . . . . . . . 71 A.5 Schrodinger equation and modal gain . . . . . . . . . . . 72 A.6 Light extraction problem . . . . . . . . . . . . . . . . . . 75 A.7 Rigorous coupled-wave analysis method . . . . . . . . . 76 B Appendix Simulation parameters . . . . . . . . . . . . . . . 84 B.1 Parameters for optical and electrical model . . . . . . . . 84 B.2 Parameters for thermal model . . . . . . . . . . . . . . . 85 | |
| dc.language.iso | en | |
| dc.subject | 熱優化 | zh_TW |
| dc.subject | 低閾值電流 | zh_TW |
| dc.subject | 設計準則 | zh_TW |
| dc.subject | 垂直共振腔面射型雷射 | zh_TW |
| dc.subject | 長波紫外光 | zh_TW |
| dc.subject | UVA VCSEL | en |
| dc.subject | designed rule | en |
| dc.subject | low threshold current | en |
| dc.subject | thermal optimization | en |
| dc.title | 垂直共振腔面射型雷射之設計與優化 | zh_TW |
| dc.title | Design and Optimization of Vertical-Cavity Surface-Emitting Laser Diode | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃建璋(Jian-Jang Huang),吳肇欣(Chao-Hsin Wu),盧廷昌(Tien-Chang Lu) | |
| dc.subject.keyword | 長波紫外光,垂直共振腔面射型雷射,設計準則,低閾值電流,熱優化, | zh_TW |
| dc.subject.keyword | UVA VCSEL,designed rule,low threshold current,thermal optimization, | en |
| dc.relation.page | 86 | |
| dc.identifier.doi | 10.6342/NTU202003675 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2020-08-19 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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