低溫基板黏接鍵合應用於砷化鎵基板微碟共振腔與矽基板波導垂直耦合

Abstract

在本篇論文中，我們使用苯環丁烯在真空下進行低溫基板黏接鍵合，完成了砷化鎵基板上的氮化矽微碟共振腔與矽基板上的氮化矽波導之垂直耦合元件。為此，我們改裝實驗室現有真空腔體且成功的解決過去實驗室在苯環丁烯層出現的氣泡問題。從上述基板黏接鍵合氮化矽共振腔及波導的實驗中，我們認為欲提升良率，需要進一步提升黏接鍵合時之操作溫度。 此外，我們進行了20 µm直徑的氮化矽微碟共振腔與寬度8 µm波導之水平相對位置變化與耦合行為的探討。實驗發現，在重疊位置為0.9 µm附近有較高之共振腔品質因子(Q factor)，其Q值達到16400。從量測之傳輸頻譜分析，我們探討其水平相對位置變化與模態之Q值及深度之間的關係。

In this thesis, we bonded SiNx microdisk resonators on GaAs substrates with SiNx waveguides on Si substrates by the low temperature adhesive wafer bonding method with benzocyclobutene in vacuum. To carry out this experiment we modified an existing vacuum chamber in our laboratory and successfully solved the problem of bubbles in the benzocyclobutene layer when bonding in the atmosphere environment in the past. From our wafer bonding experiment, we came to the conclusion that it is important to further increase the operation temperature during bonding in order to improve the yield. Furthermore, we investigated the relative position and coupling behavior of SiNx microdisk resonators of 20 μm in diameter with waveguides of 8 μm in width. And it is observed that there is a higher Q factor of 16400 at the position of 0.9 μm overlapping. From the measured transmission spectra, we discussed the relations between the horizontal relative position and Q factors and dips of the resonant modes.