三族氮氧化物白光二極體及二極記憶體之研製

Abstract

本論文利用原子層沉積系統製作結合發出寬頻白光以及電阻型記憶特性的元件，內容分三部分，第一部分闡述寬頻白光及電阻型記憶操作的原理，第二部分為元件之製作及材料分析，包含了電漿輔助型原子層沉積系統的原理與操作、沉積材料成長速率之校正、X射線光電子能譜特性分析，元件完整的製程以及利用HRTEM觀察元件橫截面，第三部分為元件之量測及計算，包含電激發光光譜、色座標及相關色溫計算、電壓-電流特性、直流電壓掃描分析、單點脈衝電阻切換、穩定度分析。 吾人用電漿輔助型原子層沉積系統沉積了AlON/GaON夾層結構 (厚度為2/12/2、2/18/2、2/21/2、2/24/2、2/9/2/9/2、2/12/2/12/2、2/18/2/9/2及2/6/1/6/1/6/2 nm)八種結構，並製作在三種不同基板共18個元件，發現元件色溫範圍由1700K到3000K，元件閥值電壓範圍由2.5V到3.5V，而部份元件記憶體電阻切換抹寫次數可達10萬次，並且穩定時間至少10,000秒，多階層的資料儲存亦證實可能。

In this thesis, we demonstrate a new kind of devices which com-bine broadband white light emission and ReRAM characteristics. The devices were prepared by Plasma-Enhanced Atomic Layer Deposition (PE-ALD). There are three main parts in this thesis. First, we elaborate the mechanisms of broadband white light emission and ReRAM charac-teristics. Second, we introduce how to make our devices, including the mechanism and operation of PE-ALD, the calibration of growth rate and X-ray photoelectron spectroscopy analysis of each material, and the whole device fabrication process. After fabrication, we observed the device’s cross section by using HRTEM. The third part is the meas-urement and analysis of devices, including electroluminescence spectra, color coordinates, correlated color temperature, I-V characteristics, DC voltage sweep analysis, pulse memory switching operation and reten-tion time analysis. We used PE-ALD to deposit AlON/GaON layers structure(of thickness 2/12/2, 2/18/2, 2/21/2, 2/24/2,2/9/2/9/2, 2/12/2/12/2,2/18/2/9/2 and 2/6/1/6/1/6/2 nm), and to fabricate them on three different substrates. There are 18 devices in total. We discovered CCT of the devices ranges from 1700K to 3000K, and the threshold voltage range is from 2.5V to 3.5V. ReRAM switching operations of some devices can be as many as 105 cycles, and the retention time can be at least 10,000 seconds. Multilevel resistance states were confirmed to be possible, too.