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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電信工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/68353
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dc.contributor.advisor吳瑞北(Ruey-Beei Wu)
dc.contributor.authorPo-Yu Changen
dc.contributor.author張伯瑜zh_TW
dc.date.accessioned2021-06-17T02:18:30Z-
dc.date.available2020-08-25
dc.date.copyright2017-08-25
dc.date.issued2017
dc.date.submitted2017-08-22
dc.identifier.citation[1] B. Baloglu, G. Scott, and C. Zwenger, 'Silicon Wafer Integrated Fan-Out Technology,' International Wafer Level Packaging Conference (IWLPC 2017), Oct 18-20, 2016.
[2] C. F. Tseng, C. S. Liu, C. H. Wu, and D. Yu, 'InFO (Wafer Level Integrated Fan-Out) Technology,' 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, 2016, pp. 1-6.
[3] N.-C. Chen, T.-H. Hsieh, J. Jinn, P.-H. Chang, F. Huang, J. Xiao, A. Chou, and B. Lin, 'A Novel System in Package with Fan-Out WLP for High Speed SERDES Application,' 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, 2016, pp. 1495-1501.
[4] S. M. Chen, L. H. Huang, J. H. Yeh, Y. J. Lin, F. W. Kuo, H. N. Chen, M. Y. Chiu, C. C. Liu, J. Yeh, T. J. Yeh, S. Y. Hou, J. P. Hung, J. C. Lin, C. P. Jou, S. P. Jeng, and D. Yu, 'High-performance inductors for integrated fan-out wafer level packaging (InFO-WLP),' 2013 Symposium on VLSI Technology, Kyoto, 2013, pp. T46-T47.
[5] C. C. Liu, S.-M. Chen, F.-W. Kuo, H.-N. Chen, E.-H. Yeh, C.-C. Hsieh, L.-H. Huang, M.-Y. Chiu, J. Yeh, T.-S. Lin, T.-J. Yeh, S.-Y. Hou, J.-P. Hung, J.-C. Lin, C.-P. Jou, C.-T. Wang, S.-P. Jeng, and D. C. H. Yu, 'High-performance integrated fan-out wafer level packaging (InFO-WLP): Technology and system integration,' 2012 International Electron Devices Meeting, San Francisco, CA, 2012, pp. 14.1.1-14.1.4.
[6] Y. Jin, X. Baraton, S. W. Yoon, Y. Lin, P. C. Marimuthu, V. P. Ganesh, T. Meyer, and A. Bahr, 'Next generation eWLB (embedded wafer level BGA) packaging,' 2010 12th Electronics Packaging Technology Conference, Singapore, 2010, pp. 520-526.
[7] D. Yu, 'A new integration technology platform: Integrated fan-out wafer-level-packaging for mobile applications,' 2015 Symposium on VLSI Technology (VLSI Technology), Kyoto, 2015, pp. T46-T47.
[8] 郭宗益(民 105)。改善晶圓級封裝電源完整度之雙層電源接地網格佈局優化法(碩士論文)。國立臺灣大學,臺北市。
[9] D. R. Stauffer, J. T. Mechler, M. Sorna, K. Dramstad, C. R. Ogilvie, A. Mohammad, and J. Rockrohr, High speed serdes devices and applications, Springer, Inc., 2009.
[10] J. Ou, and M. F. Caggiano, 'Rapid inductance calculation for interconnects containing current returning, grounded, floating conductors,' 26th International Spring Seminar on Electronics Technology: Integrated Management of Electronic Materials Production, 2003., 2003, pp. 51-56.
[11] S. H. Hall, G. W. Hall, and J. A. McCall, High-Speed Digital System Design, A Handbook of Interconnect Theory and Design Practices, John Wiley & Sons, Inc., 2000.
[12] T. Nigussie and P. D. Franzon, 'RDL and interposer design for DiRAM4 interfaces,' 2016 IEEE 25th Conference on Electrical Performance Of Electronic Packaging And Systems (EPEPS), San Diego, CA, 2016, pp. 17-20.
[13] K.-B. Wu, T.-Y. Kuo, and Y.-J. Lee, 'Signal and Power Integrity Analysis for Wafer Level Packaging in High-Speed Memory Application,' MediaTek-NTU Research Center, 2016.
[14] M. I. Montrose, Printed Circuit Board Design Techniques for EMC Compliance. Piscataway, NJ: IEEE Press, 1996.
[15] D. M. Pozar, Microwave engineering, 4th Edition, Wiley, Inc.,2011.
[16] Y. H. Chou, T. L. Hsieh, C. Y. Tsai, C. C. Wang, and L. T. Hwang, 'An ultra low loss SerDes signal design on a FC package applied in 56 Gbps networks,' 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, 2016, pp. 2311-2316.
[17] W. Humann, 'Compensation of transmission line loss for Gbit/s test on ATEs,' Proceedings. International Test Conference, 2002, pp. 430-437.
[18] M. Swaminathan and A. E. Engin, Power Integrity Modeling and Design for Semiconductor and Systems. Englewood Cliffs, NJ: Prentice-Hall, 2007.
[19] S. Haykin, Adaptive Filter Theory, Prentice Hall, 2001.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/68353-
dc.description.abstract本論文提出高速串列通訊介面電源與訊號完整度電路模型並探討其電性特性,其中高速串列通訊介面包含操作速率為4Gbps高速並列訊號單端傳輸架構以及操作速率為25Gbps高速串列訊號差動傳輸架構。論文內容主要分為三大部分,一是建立4Gbps高速並列訊號電路模型,在接收端信號眼圖進行分析,提出接收端信號眼圖的增進方法為降低串音干擾以及降低正規化電阻,透過此設計與原本結構相比,成功提升眼圖品質當佈線長度為8mm時最大傳輸頻寬提升35%,並給予佈局設計的橫截面積與最大傳輸頻寬的關係圖,以利根據需求選擇設計佈局。二是在25Gbps高速串列差動訊號部分設計被動式等化器以及FIR等化器補償通道損失,提升訊號完整度性能以及探討等化器使用的極限,透過此設計使眼圖之眼高在操作速率為25Gbps下提升20%,當操作速率提升到50Gbps時眼高提升為43%,以及使用FIR等化器補償25Gbps高速串列差動訊號線微縮後,線寬為0.5μm時提升佈線長度110%,並使用印刷電路板(PCB)尺度放大模型驗證眼圖模擬結果的正確性。三是提出完整的電源供應網路模型,在高速串列通訊介面的電源傳輸阻抗利用模擬軟體萃取參數方法以及選擇擺放去耦合電容能夠抑制電源傳輸阻抗,對於預測及分析未來的訊號/電源完整度共模擬有極大的幫助。zh_TW
dc.description.abstractThis thesis presents power and signal integrity model for high speed SerDes interface operating at 25 Gbps. High speed SerDes interface includes 4 Gbps high speed single end parallel signal and 25 Gbps differential serial signal. This research is divided into three sections.
First, establishing high speed parallel signal circuit model and analyzing the signal eye diagram on the receiving end. Presenting methods to increase receiving end signal eye diagram by decreasing cross talk noise and normalized resistance. Comparing with the original design, successfully increased layout length by 8 mm while increasing 35% the maximum bandwidth. Giving each layout design’s cross sections and maximum bandwidth relational graph for designers to design the most suitable layout.
Second, design the high speed differential serial signal with a passive equalizer and FIR equalizer for faster selection to compensate the loss in channel. Thus increasing the integrity of the signal and exploring the limits of the equalizers. Through the eye height design, operating at 25 Gbps increases by 20%, 50 Gbps increases by 43% and using FIR equalizer to compensate 25 Gbps scaling down high speed differential serial signal by line width 0.5 μm increases layout length by 110%. Also, using PCB scaling up model to verify eye diagram simulation results and testing its accuracy.
Lastly, presenting the power delivery network model. Aiming at the ground bounce noise of high speed SerDes interface extracting parameter with simulation software, which will be of great help in prediction and analyzing simulations for future signal / power integrity.
en
dc.description.provenanceMade available in DSpace on 2021-06-17T02:18:30Z (GMT). No. of bitstreams: 1
ntu-106-R04942093-1.pdf: 4369351 bytes, checksum: 46d4f1d6a2650d0b78889e69f1086f20 (MD5)
Previous issue date: 2017
en
dc.description.tableofcontents口試委員會審定書 ii
中文摘要 iii
Abstract iv
CONTENTS v
圖目錄 viii
表目錄 xii
Chapter 1 緒論 1
1.1 研究動機 1
1.2 主要貢獻 2
1.3 章節概述 3
Chapter 2 晶圓級構裝技術簡介 4
2.1 高速串列通訊介面簡介 5
2.1.1 並列數據傳輸 5
2.1.2 串列數據傳輸 6
2.1.3 高速SerDes裝置 6
2.2 晶圓級構裝堆疊製程應用 7
2.2.1 重新分配層(Re-distribution layer, RDL) 9
2.2.2 介質層(Build-up layer) 10
2.3 應用處理器與晶圓級構裝整合系統等效模組建立 11
Chapter 3 高速並列信號之訊號完整度分析 14
3.1 高速並列信號傳輸之等效電路 14
3.2 串音效應 15
3.3 正規化電阻效應 18
3.4 高速並列信號簡化模型 19
3.5 高速並列信號模擬結果 21
Chapter 4 高速串列信號之訊號完整度分析 24
4.1 串列器/解串列器電路簡介 24
4.1.1 SerDes模組化 24
4.2 差動傳輸線架構 26
4.2.1 重新分配層(Re-distribution layer, RDL)結構 28
4.2.2 介質層(Build-up layer)結構 29
4.3 高速串列訊號結構最佳化設計 29
4.3.1 等效電路模型建立 30
4.3.2 高速串列訊號最佳化 32
4.4 高速串列訊號簡化模型及結果 37
4.4.1 簡化模型 37
4.4.2 高速串列訊號模擬結果 39
Chapter 5 高速串列信號訊號完整度設計與改善 42
5.1 被動式等化器設計 42
5.1.1 被動式等化器簡介 42
5.1.2 被動式等化器設計 43
5.2 有限脈波響應等化器設計 48
5.2.1 有限脈衝響應等化器應用 48
5.3 有限脈衝響應等化器實驗驗證 53
5.3.1 等效電路架構 53
5.3.2 降低操作速率模型模擬結果 55
5.3.3 印刷電路板尺度放大模型量測結果 57
Chapter 6 高速串列通訊介面電源完整度分析 58
6.1 電源完整度簡介 58
6.2 電源供應網路等效模型建立 59
6.3 電源供應網路模擬結果 63
6.3.1 重新分配層結果 63
6.3.2 介質層基板及印刷電路板模擬結果 65
6.3.3 電源供應網路模型驗證 68
6.3.4 整體模擬結果 70
Chapter 7 結論 73
參考文獻 74
dc.language.isozh-TW
dc.title晶圓級系統構裝於高速串列通訊介面的訊號完整度設計zh_TW
dc.titleSignal Integrity Design for High Speed SerDes Interface in Wafer Level Packageen
dc.typeThesis
dc.date.schoolyear105-2
dc.description.degree碩士
dc.contributor.oralexamcommittee吳宗霖(Tzong-Lin Wu),鍾世忠(Shyh-Jong Chung),洪子聖(Tzyy-Sheng Horng),楊明宗(Ming-Tzong Yang)
dc.subject.keyword高速串列通訊介面,串音雜訊,正規化電阻,信號/電源完整度,電源供應網路,晶圓級封裝,重新分配層,被動式等化器,FIR 等化器,zh_TW
dc.subject.keywordHigh-speed SerDes interface,Crosstalk noise,Normalized resistance,Signal/Power integrity,Power supply network,Wafer level package,Redistribution layer (RDL),Passive equalizer,FIR equalizer,en
dc.relation.page75
dc.identifier.doi10.6342/NTU201704137
dc.rights.note有償授權
dc.date.accepted2017-08-22
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電信工程學研究所zh_TW
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