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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.author | Hsun-Ming Chang | en |
dc.contributor.author | 張洵銘 | zh_TW |
dc.date.accessioned | 2021-06-17T01:44:03Z | - |
dc.date.available | 2017-08-01 | |
dc.date.copyright | 2017-08-01 | |
dc.date.issued | 2017 | |
dc.date.submitted | 2017-07-27 | |
dc.identifier.citation | [1] Moore’s law, Wikipedia.
[2] Mark Bohr, Intel. Intel Technology and Manufacturing Day. Mar 28, 2017 [3] Schwierz, Frank. 'Graphene transistors.' Nature nanotechnology 5.7 (2010): 487-496. [4] http://www.tsmc.com.tw/chinese/dedicatedFoundry/technology/mtm.htm [5] 2011 Executive Summary – ITRS. [6] Chen, A. “Beyond-CMOS Technology Roadmap.” Emerging Research Devices. (ERD), ITRS. [7] Ellinger, F., et al. 'Review of advanced and beyond CMOS FET technologies for radio frequency circuit design.' Microwave & Optoelectronics Conference (IMOC), 2011 SBMO/IEEE MTT-S International. IEEE, 2011. [8] The International Technology Roadmap for Semiconductors, http://www.itrs.net. [9] Ferain, Isabelle, Cynthia A. Colinge, and Jean-Pierre Colinge. 'Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors.' Nature 479.7373 (2011): 310. [10] Colinge, Jean-Pierre. 'Multiple-gate SOI MOSFETs.' Solid-State Electronics 48.6 (2004): 897-905. [11] Uchida, Ken, et al. 'Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm.' Electron Devices Meeting, 2002. IEDM'02. International. IEEE, 2002. [12] Reggiani, Susanna, et al. 'Low-field electron mobility model for ultrathin-body SOI and double-gate MOSFETs with extremely small silicon thicknesses.' IEEE Transactions on Electron Devices 54.9 (2007): 2204-2212. [13] Gomez, Leonardo, I. Aberg, and J. L. Hoyt. 'Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25 nm.' IEEE electron device letters 28.4 (2007): 285-287. [14] Low, Tony, et al. 'Impact of surface roughness on silicon and germanium ultra-thin-body MOSFETs.' Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. IEEE, 2004. [15] Fang, Hui, et al. 'Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.' Proceedings of the National Academy of Sciences 111.17 (2014): 6198-6202. [16] Novoselov, Kostya S., et al. 'Electric field effect in atomically thin carbon films.' science 306.5696 (2004): 666-669. [17] Wang, Qing Hua, et al. 'Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.' Nature nanotechnology 7.11 (2012): 699-712. [18] Radisavljevic, Branimir, et al. 'Single-layer MoS2 transistors.' Nature nanotechnology 6.3 (2011): 147-150. [19] Ganatra, Rudren, and Qing Zhang. 'Few-layer MoS2: a promising layered semiconductor.' ACS nano 8.5 (2014): 4074-4099. [20] Li, Likai, et al. 'Black phosphorus field-effect transistors.' Nature nanotechnology 9.5 (2014): 372-377. [21] Nishii, T., et al. 'Synthesis and characterization of black phosphorus intercalation compounds.' Synthetic Metals 18.1-3 (1987): 559-564. [22] Bridgman, P. W. 'TWO NEW MODIFICATIONS OF PHOSPHORUS.' Journal of the American chemical society 36.7 (1914): 1344-1363. [23] Qiao, Jingsi, et al. 'High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus.' Nature communications 5 (2014). [24] Takao, Yukihiro, Hideo Asahina, and Akira Morita. 'Electronic structure of black phosphorus in tight binding approach.' Journal of the Physical Society of Japan 50.10 (1981): 3362-3369. [25] Long, Gen, et al. 'Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus.' Nano letters 16.12 (2016): 7768-7773. [26] Du, Haiwei, et al. 'Recent developments in black phosphorus transistors.' Journal of Materials Chemistry C 3.34 (2015): 8760-8775. [27] Wang, Han, et al. 'Black phosphorus radio-frequency transistors.' Nano letters 14.11 (2014): 6424-6429. [28] Zhu, Weinan, et al. 'Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.' Nano letters 15.3 (2015): 1883-1890. [29] Allain, Adrien, et al. 'Electrical contacts to two-dimensional semiconductors.' Nature Materials 14.12 (2015): 1195. [30] Kang, Jiahao, et al. 'Proposal for all-graphene monolithic logic circuits.' Applied Physics Letters 103.8 (2013): 083113. [31] Kappera, Rajesh, et al. 'Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.' Nature materials 13.12 (2014): 1128. [32] Deng, Yexin, et al. 'Towards high-performance two-dimensional black phosphorus optoelectronic devices: the role of metal contacts.' Electron Devices Meeting (IEDM), 2014 IEEE International. IEEE, 2014. [33] Du, Yuchen, et al. 'Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.' ACS nano 8.10 (2014): 10035-10042. [34] Perello, David J., et al. 'High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering.' Nature communications 6 (2015). [35] Haratipour, Nazila, and Steven J. Koester. 'Ambipolar black phosphorus MOSFETs with record n-channel transconductance.' IEEE Electron Device Letters 37.1 (2016): 103-106. [36] Xiang, Du, et al. 'Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus.' Nature communications 6 (2015): 6485. [37] Zhao, Peida, et al. 'Air stable p-doping of WSe2 by covalent functionalization.' ACS nano 8.10 (2014): 10808-10814. [38] Du, Yuchen, et al. 'Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping.' IEEE Electron Device Letters 37.4 (2016): 429-432. [39] Penumatcha, Ashish V., Ramon B. Salazar, and Joerg Appenzeller. 'Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.' Nature communications 6 (2015). [40] Castellanos-Gomez, Andres, et al. 'Isolation and characterization of few-layer black phosphorus.' 2D Materials 1.2 (2014): 025001. [41] Jia, Jingyuan, et al. 'Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties.' ACS nano 9.9 (2015): 8729-8736. [42] Dean, Cory R., et al. 'Boron nitride substrates for high-quality graphene electronics.' Nature nanotechnology 5.10 (2010): 722-726. [43] Castellanos-Gomez, Andres, et al. 'Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping.' 2D Materials 1.1 (2014): 011002. [44] Roy, Tania, et al. 'Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.' Acs Nano 9.2 (2015): 2071-2079. [45] Maruyama, Yusei, et al. 'Electrical conductivity of black phosphorous-germanium compound.' Synthetic Metals 43.3 (1991): 4067-4070. [46] Li, Ling, et al. 'High-performance p-type black phosphorus transistor with scandium contact.' ACS nano 10.4 (2016): 4672-4677. [47] English, Chris D., et al. 'Improved contacts to MoS2 transistors by ultra-high vacuum metal deposition.' Nano letters 16.6 (2016): 3824-3830. [48] Haratipour, Nazila, Matthew C. Robbins, and Steven J. Koester. 'Black phosphorus p-MOSFETs with 7-nm HfO2 gate dielectric and low contact resistance.' IEEE Electron Device Letters 36.4 (2015): 411-413. [49] Yang, L. M., et al. 'Few-layer black phosporous PMOSFETs with BN/Al2O3 bilayer gate dielectric: Achieving Ion= 850μA/μm, gm= 340μS/μm, and Rc= 0.58 kΩ· μm.' Electron Devices Meeting (IEDM), 2016 IEEE International. IEEE, 2016. [50] Chang, C. Y., Y. K. Fang, and S. M. Sze. 'Specific contact resistance of metal-semiconductor barriers.' Solid-State Electronics 14.7 (1971): 541-550. [51] Padovani, F. A., and R. Stratton. 'Field and thermionic-field emission in Schottky barriers.' Solid-State Electronics 9.7 (1966): 695-707. [52] Pérez-Tomás, Amador, et al. 'Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN.' Microelectronics Reliability 51.8 (2011): 1325-1329. [53] Cao, Gaoqi, et al. 'Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure.' Applied Physics A 121.3 (2015): 1109-1114. [54] Moulder, J. F. Handbook of X-ray photoelectron spectroscopy: a reference book of standard spectra for identification and interpretation of XPS data. Eds. Jill Chastain, and Roger C. King. Eden Prairie, Minnesota: Physical Electronics Division, Perkin-Elmer Corporation, 1992. [55] Lu, Peng, et al. 'Phosphorus doping in Si nanocrystals/SiO2 multilayers and light emission with wavelength compatible for optical telecommunication.' Scientific reports 6 (2016): 22888. [56] Raj, K., et al. 'XPS and IR spectral studies on the structure of phosphate and sulphate modified titania–A combined DFT and experimental study.' (2010). [57] Li, Qianqian, et al. 'Germanium and phosphorus co-doped carbon nanotubes with high electrocatalytic activity for oxygen reduction reaction.' RSC Advances 6.39 (2016): 33205-33211. [58] Mott, N. F. 'IMPURITY BAND CONDUCTION. EXPERIMENT AND THEORYTHE METAL-INSULATOR TRANSITION IN AN IMPURITY BAND.' Le Journal de Physique Colloques 37.C4 (1976): C4-301. [59] Das, Saptarshi, et al. 'High performance multilayer MoS2 transistors with scandium contacts.' Nano letters 13.1 (2012): 100-105. [60] Chen, Jen-Ru, et al. 'Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts.' Nano letters 13.7 (2013): 3106-3110. [61] Cai, Yongqing, Gang Zhang, and Yong-Wei Zhang. 'Layer-dependent band alignment and work function of few-layer phosphorene.' Scientific reports 4 (2014): 6677. [62] Egginger, Martin, et al. 'Current versus gate voltage hysteresis in organic field effect transistors.' Monatshefte für Chemie-Chemical Monthly 140.7 (2009): 735-750. [63] Illarionov, Yury Yuryevich, et al. 'Long-term stability and reliability of black phosphorus field-effect transistors.' ACS nano 10.10 (2016): 9543-9549. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/67685 | - |
dc.description.abstract | 在摩爾定律即將面臨挑戰的時代,二維材料之材料特性的優勢使其成為未來可能替換掉傳統矽的材料。常見的二維材料包含石墨烯、過渡金屬二硫化物等等;而其中又以同時具備高載子遷移率與能隙的黑磷的材料特性較為突出。然而,金屬與黑磷的接觸電阻為限制其元件特性的重大議題,因此,本論文將研究如何降低黑磷的接觸電阻以及分析金屬與黑磷的介面特性。
本研究以機械式剝離法,將數層黑磷撕至二氧化矽基板上並以原子力顯微鏡及拉曼光譜分析黑磷之品質。並透過電子束微影的製程定義出源汲極,接著鍍上金屬,完成背閘極之黑磷電晶體。其電洞載子遷移率為340 cm2/Vs,並有103的開關比。另外也成功開發了二維材料異質結構堆疊的技術,完成以石墨烯為電極的二硫化鉬電晶體,其電洞載子遷移率為87.6 cm2/Vs,並有105的開關比。 為了降低黑磷的接觸電阻,我們以鍺作為黑磷電晶體的接觸金屬,在快速熱退火後成功地將鍺參雜入黑磷的源/汲極,退火後電洞遷移率最大可達227 cm2/Vs,載子遷移率增幅最大可達超過25倍,其接觸電阻可降低至0.365 kΩ∙μm,為目前文獻中的最低值。透過低溫量測的分析此接觸之金屬性,最後以X射線光電子能譜驗證了磷與鍺的鍵結。 為了分析鈦與黑磷的接面,我們透過活化能來萃取其蕭特基能障高度。經由理論的估計與穿隧電子顯微鏡的分析,我們發現此蕭特基能障高度為被低估的值。因此,我們改為利用接觸電阻的方法,成功的萃取出與理論較相符的蕭特基能障。 此研究可被高度應用在未來黑磷電晶體的發展,參雜鍺以降低接觸電阻的方式可應用於高頻及尺寸微縮,蕭特基能障萃取的方法可更廣泛的應用於不同金屬,能夠更精確地描述金屬與黑磷的接面關係。 | zh_TW |
dc.description.abstract | In an era of post-Moore’s law, 2D materials become a promising platform for future electronic devices for their superior material properties. Although graphene and TMDs are the most discussed 2D materials, black phosphorus becomes more and more noticeable due to the high mobility and tunable band gap. However, the issue of contact resistance often limits the performance. Therefore, in this thesis, we will focus on the reduction of contact resistance and analysis of Schottky barrier height.
We mechanically exfoliate few-layer BP onto SiO2 substrate and characterize the properties of BP flakes by OM, Raman spectroscopy, AFM. The back-gated BP FET is successfully fabricated, with an ION/IOFF of 103 and an extrinsic hole mobility of 340 cm2/Vs. A graphene contact MoS2 transistor by 2D heterostructure stacking graphene/MoS2/graphene heterostructure, and achieve an ION/IOFF ratio of 103 and extrinsic electron mobility of 87.6 cm2/Vs. Ge-doped S/D contacts of BP transistors are formed after RTA treatment. The mobility is enhanced by 25 times after RTA treatment. In addition, the contact resistance after RTA can be as low as 0.365 kΩ∙μm, which is the lowest value in literature and is comparable to III-V devices. Moreover, the PGex contact shows metallic properties, which is for the first time a metallic contact is shown in BP devices. XPS characterization further verify the P-Ge bonding after RTA. Schottky barrier height extraction of Ti-BP contact by activation energy method is also demonstrated. Through theoretical estimation and material characterization, an underestimated SBH is found which results from the hysteresis at higher temperature. Hence, a modified method is proposed by SBH extraction from contact resistance. A more accurate SBH is extracted, which can describe the Ti-BP contact more properly. The research in this thesis can be highly applied to BP devices in the future. Ge-doping technique can be applied to device scaling and high frequency devices, and SBH extraction can be applied to the analysis of metal-BP contact. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T01:44:03Z (GMT). No. of bitstreams: 1 ntu-106-R04941023-1.pdf: 3774662 bytes, checksum: 03c47299bddcfaaf2156421c67922ce6 (MD5) Previous issue date: 2017 | en |
dc.description.tableofcontents | 口試委員審定書 II
誌謝 III 中文摘要 V ABSTRACT VI 目錄 VIII List of Figures XI List of Tables XIII Chapter 1. Introduction and Motivation 1 1.1 Introduction 1 1.1.1 The rising of 2D materials 1 1.1.2 Advantages of 2D materials in future electronic applications 3 1.2 Black Phosphorus: a promising 2D material 4 1.3 Motivation 5 Chapter 2. Black Phosphorus Field-Effect Transistors and Development of 2D Heterostructure Stacking Technique 7 2.1 From bulk to few-layered Black Phosphorus 7 2.1.1 Preparation of few-layered Black Phosphorus 7 2.1.2 Raman spectrum characterization 10 2.1.3 Atomic Force Microscopy characterization 11 2.2 Fabrication process of Black Phosphorus Field-Effect Transistors 13 2.2.1 Substrate preparation 13 2.2.2 Few-layered Black Phosphorus exfoliation and transfer 14 2.2.3 Electron Beam Lithography (EBL) and S/D metal deposition 14 2.2.4 Summary of device fabrication 16 2.3 Results of the back gate BP transistor 18 2.4 2D Heterostructure Stacking Technique 20 2.4.1 PDMS Transfer Method 21 2.4.2 Experimental setup 24 2.4.3 Heterostructure Device: Fabrication and Results 25 2.5 Summary 27 Chapter 3. Germanium doped Metallic Ohmic contacts of Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance 29 3.1 Preface 29 3.1.1 Germanium doped Black Phosphorus Crystal 29 3.2 Device Fabrication Process 31 3.3 Electrical results 33 3.3.1 Device Performance Improvement 33 3.3.2 Contact resistance extraction 37 3.3.3 Intrinsic mobility extraction 38 3.4 Analysis of Germanium doped contacts 39 3.4.1 Traditional Models of Metal-Semiconductor Junction 39 3.4.2 Output characteristcs and TLM results at cryogenic temperature 41 3.4.3 Metallic properties of the Ge doped contacts 43 3.5 Characterization by X-ray photoelectron spectroscopy (XPS) 44 3.5.1 Experimental setup 44 3.5.2 Verification of P-Ge bond 45 3.6 Summary 47 Chapter 4. Investigation and Analysis of Metal Contacts to Black Phosphorus Field-Effect Transistors 48 4.1 Results of Ti contact Black Phosphorus transistors 48 4.2 Schottky Barrier Height Extraction by Activation Energy Measurement 50 4.2.1 Principle of Extraction 50 4.2.2 Results of the extracted SBH 52 4.3 Theoretical Calculation of Schottky Barrier Height 53 4.3.1 Theoretical Calculation of Schottky Barrier Height 53 4.3.2 Material Characterization of the Metal-Black Phosphorus Contact 54 4.3.3 Discussion of the activation energy method 57 4.4 Schottky Barrier Height Extraction by Contact Resistance 58 4.4.1 Introduction of the extraction method 58 4.4.2 Results of the extracted SBH 59 4.5 Summary 61 Chapter 5. Conclusion 63 Reference 65 | |
dc.language.iso | en | |
dc.title | 黑磷及二維材料電晶體之開發與黑磷及金屬接觸電極
之研究 | zh_TW |
dc.title | Development of Black Phosphorus and Two-Dimensional Material Field-Effect Transistors and Investigation of Black phosphorus Metal Contacts | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳奕君(I-Chun Cheng),吳育任(Yuh-Renn Wu),張書維(Shu-Wei Chang) | |
dc.subject.keyword | 二維材料,黑磷,場效電晶體,二維材料異質結構,接觸電阻,鍺黑磷化合物,蕭特基能障萃取, | zh_TW |
dc.subject.keyword | 2D materials,black phosphorus,field-effect transistors,2D heterostructure,contact resistance,PGex compound,Schottky barrier height extraction, | en |
dc.relation.page | 70 | |
dc.identifier.doi | 10.6342/NTU201702152 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2017-07-27 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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