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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳志毅 | |
dc.contributor.author | Wei-Yu Chen | en |
dc.contributor.author | 陳惟裕 | zh_TW |
dc.date.accessioned | 2021-06-17T01:35:30Z | - |
dc.date.available | 2021-08-10 | |
dc.date.copyright | 2017-08-10 | |
dc.date.issued | 2016 | |
dc.date.submitted | 2017-08-01 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/67513 | - |
dc.description.abstract | 在本論文中,研究主題可分為兩部分。第一部分為探討利用低溫電漿輔助化學氣相沉積法來成長石墨烯,並深入分析如何選擇各個實驗參數,直到最後能夠成功地成長出品質優良的石墨烯薄膜。而成長出的石墨烯薄膜再利用光學顯微鏡、掃描式電子顯微鏡以及拉曼光譜儀來檢測其品質。接著再將此石墨烯薄膜分別轉印到二氧化矽基板與ODTS基板上,並製作成石墨烯場效電晶體元件,量測其載子遷移率。再與利用商業用石墨烯製作的石墨烯場效電晶體元件做比較,來證明本實驗所成長的石墨烯薄膜可以達到很高的載子遷移率。
第二部分則是利用本實驗成長之石墨烯製作成TLM(Transfer Length Method)元件,來量測其與金屬電極間的接觸電阻,而本實驗中所選用的金屬電極為銀與金。而在得到實驗結果之後,將會利用XPS與UPS來探討石墨烯與金屬之間的交互作用對接觸電阻的影響。接著再將此實驗結果與利用高溫化學氣相沉積法所成長的石墨烯製作的TLM元件做比較,以此證明本實驗成長之石墨烯和銀與金之間具有很小的接觸電阻。最後則是討論低溫製程石墨烯的品質能過超越高溫製程石墨烯的原因,以及其更深入的應用。 | zh_TW |
dc.description.abstract | In this thesis, the topic can be divided into two parts. In the first part, we discuss how to use low temperature Plasma Enhanced Chemical Vapor Deposition to fabricate graphene. We analyze thoroughly how we adjust each parameter, until we can successfully fabricate graphene with good quality. After the graphene is fabricated, we use Optical Microscope, Scanning Electronic Microscope and Raman spectrum to examine the quality of this graphene film, to ensure its high quality. Next, we transfer this graphene onto Silicon Dioxide substrate and ODTS substrate to fabricate Graphene Field Effect Transistor(GFET), in order to extract the carrier mobility of the graphene. And we compare the result with the commercial-graphene made GFET, to prove that our graphene indeed has high carrier mobility.
In the second part, we use Transfer Length Method(TLM) to examine the contact resistance between this graphene and metal electrode, Ag and Au. After we get the result, we analyze the interaction between graphene and metal by X-ray Photoelectron Spectroscopy and Ultraviolet Photoelectron Spectroscopy. Then we compare our contact resistance with the result from High Temperature Chemical Vapor Deposition graphene, to prove that our graphene indeed again, has lower contact resistance with Ag and Au. At last, we discuss the reason why our low temperature deposition process can have such great quality compare with the high temperature deposition, and its further application. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T01:35:30Z (GMT). No. of bitstreams: 1 ntu-105-R04941068-1.pdf: 4713297 bytes, checksum: da7cf450a5c09264e69458d8dc9342dd (MD5) Previous issue date: 2016 | en |
dc.description.tableofcontents | 誌謝 I
摘要 II Abstract III CONTENTS IV List of Figures VII List of Tables X CH1 緒論 1 1.1 石墨烯的簡介 1 1.2文獻回顧 2 1.2.1 石墨烯的電子結構 2 1.2.2 石墨烯的製備方法 4 1.2.3 石墨烯的摻雜 6 1.3 石墨烯金氧半場效電晶體 7 1.3.1 石墨烯場效電晶體的結構與基本性質 7 1.3.2 困境與未來應用 9 1.4 研究動機 10 CH2 實驗理論與方法 11 2.1 實驗理論與原理 11 2.1.1 電漿輔助式化學氣相沉積法(Plasma Enhanced Chemical Vapor Deposition,簡稱PECVD) 11 2.1.1.1電漿簡介 11 2.1.1.2 電漿的分類與特性 13 2.1.1.3 高密度電漿(High Density Plasma) 18 2.1.1.4 PECVD之原理 20 2.1.2 石墨烯場效電晶體 21 2.1.3 ODTS 22 2.1.4 特徵接觸阻抗 23 2.2 實驗儀器 26 2.2.1 微波電漿機 26 2.2.2 殘餘氣體分析儀 27 2.2.3拉曼光譜儀 28 2.2.4 掃描式電子顯微鏡(Scanning Electronic Microscope) 30 2.2.5 氧電漿蝕刻機 31 2.2.6 熱蒸鍍機 32 2.3 實驗方法 33 2.3.1 PECVD石墨烯薄膜之成長與檢測 33 2.3.1.1銅片準備 33 2.3.1.2石墨烯成長 34 2.3.2 PECVD石墨烯場效電晶體元件製作與量測 35 2.3.2.1 二氧化矽基板準備 35 2.3.2.2 ODTS製程 35 2.3.2.3 石墨烯樣品轉印 36 2.3.2.4 小尺寸石墨烯場效電晶體之製作 37 2.3.3PECVD石墨烯TLM製作與量測 39 2.3.3.1二氧化矽基板準備與石墨烯樣品轉印 39 2.3.3.2 電極蒸鍍 39 CH3 以電漿輔助式化學氣相沉積法低溫製備石墨烯 40 3.1 實驗過程 40 3.1.1 銅片的正面與反面 40 3.1.2 實驗時間的定量 42 3.1.3 碳源的多寡 45 3.1.4 結論 52 3.2電漿輔助化學氣相沉積法與溫度之關係探討 59 3.3低溫製備石墨烯之場效電晶體 62 CH4 低溫製備之石墨烯與金屬接觸介面之分析 69 4.1實驗數據 69 4.1.1 低溫製備石墨烯與銀之接觸電阻 69 4.1.2 低溫製備石墨烯與金之接觸電阻 70 4.2 結果分析 71 4.2.1 金屬的功函數對接觸電阻之影響 71 4.2.2 石墨烯與金屬之交互作用 74 4.2.3 低溫製程之石墨烯與高溫製程之石墨烯接觸電阻之關係探討 77 CH5 結論 83 5.1 總結 83 5.2 參考文獻 85 | |
dc.language.iso | zh-TW | |
dc.title | 低溫成長高載子遷移率與低接觸電阻之石墨烯 | zh_TW |
dc.title | Low Temperature Deposition of High Carrier Mobility and Low Contact Resistance Graphene | en |
dc.type | Thesis | |
dc.date.schoolyear | 105-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳美杏,陳奕君,林恭如 | |
dc.subject.keyword | 石墨烯,低溫製程,電漿輔助化學氣相沉積法,高載子遷移率,低接觸電阻, | zh_TW |
dc.subject.keyword | Graphene,Low Temperature Deposition Process,Plasma Enhanced Chemical Vapor Deposition,High Carrier Mobility,Low Contact Resistance, | en |
dc.relation.page | 93 | |
dc.identifier.doi | 10.6342/NTU201702348 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2017-08-02 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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