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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳永芳 | |
dc.contributor.author | Han-Yu Shih | en |
dc.contributor.author | 施函宇 | zh_TW |
dc.date.accessioned | 2021-05-17T09:16:03Z | - |
dc.date.available | 2012-12-01 | |
dc.date.available | 2021-05-17T09:16:03Z | - |
dc.date.copyright | 2012-08-17 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-06 | |
dc.identifier.citation | Chapter 1:
1. Online resource, http://goldbook.iupac.org/S05591.html 2. Fritz Allhoff, Patrick Lin, Daniel Moore, What is nanotechnology and why does it matter?: from science to ethics, pp.3–5, John Wiley and Sons, 2010 ISBN 1-4051-7545-1. 3. S.K. Prasad, Modern Concepts in Nanotechnology, pp.31–32, Discovery Publishing House, 2008 ISBN 81-8356-296-5. 4. Kahn, Jennifer, 'Nanotechnology'. National Geographic 2006 (June): pp. 98–119. 5. P. Rodgers, 'Nanoelectronics: Single file'. Nature Nanotechnology (2006). 6. Cristina Buzea, Ivan Pacheco, and Kevin Robbie, 'Nanomaterials and Nanoparticles: Sources and Toxicity'. Biointerphases 2: MR17. (2007). Chapter 2: 1. Online resource, http://en.wikipedia.org/wiki/Spectrometer. 2. Online resource, http://en.wikipedia.org/wiki/Monochromator. 3. Online resource, http://en.wikipedia.org/wiki/Photomultiplier. 4. Online resource, http://en.wikipedia.org/wiki/Charge-coupled_device. 5. R. A. Stradling and P. C. Klipstein, Growth and Characterisation of Semiconductors, published by Hilger (1990). 6. S. Perkowitz, Optical Characterization of Semiconductors: Infrared, Raman, and Photoluminescence Spectroscopy, published by Academic Press (1993). 7. J. I. Pankove, Optical Processes in Semiconductors, Prentice-Hall, Inc. (1971). 8. G. D. Gilliland, Mater. Sci. Eng. R18, 99 (1997). 9. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, published by Springer (2001). 10. Friedrich W, Knipping P, von Laue M, Interferenz-Erscheinungen bei Röntgenstrahlen (1912). 11. von Laue M. 'Concerning the detection of x-ray interferences' Nobel Lectures, Physics 1901–1921 (1914). 12. Dana ES, Ford WE, A Textbook of Mineralogy, fourth edition. New York: John Wiley & Sons. pp. 28 (1932). 13. Online resource, http://en.wikipedia.org/wiki/Scanning_electron_microscope. 14. Gerald B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice (2nd ed.), Academic Press (1999) (ISBN 0-12-673842-4). 15. R.S. Wagner and W.C. Ellis, Applied Physics Letters 4, 89 (1964). 16. Guo, M.; Diao, P.; Cai, S.; J. Sol. Sta. Chem. 2005, 178, 1864. 17. M. Quirk and J. Serda, Semiconductor Manufacturing Technology, Prentice Hall (2000). 18. M. Birkholz 'Crystal-field induced dipoles in heteropolar crystals – II. physical significance'. Z. Phys. B 96 (3): 333–340 (1995). 19. S. Trolier-McKinstry 'Chapter3: Crystal Chemistry of Piezoelectric Materials'. In A. Safari, E.K. Akdo˘gan. Piezoelectric and Acoustic Materials for Transducer Applications. New York: Springer. (2008). 20. Sensor Sense: Piezoelectric Force Sensors. Machinedesign.com (2008-02-07). 21. Online resource, http://en.wikipedia.org/wiki/Quantum-confined_Stark_effect. 22. Online resource, http://en.wikipedia.org/wiki/Zinc_oxide. 23. R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 94, 063505 (2009). 24. Online resource, http://www.tms.org/pubs/journals/jom/9709/steigerwald-9709.html 25. Online resource, http://en.wikipedia.org/wiki/Light-emitting_diode. Chapter 3: 1. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005). 2. C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett. 7, 1003 (2007). 3. Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, J. P. Li, and C. L. Lin, Appl. Phys. Lett. 84, 3654 (2004). 4. F. Zhanga, X. Wanga, S. Aia, Z. Suna, Q. Wana, Z. Zhub, Y. Xiana, L. Jin, and K. Yamamotoc, Analytica Chimica Acta 519, 155 (2004). 5. A. S. Dussert, E. Gooris, and J. Hemmerle, Int. J. Cosmetic Sci. 19, 119 (1997). 6. H. Y. Shih, T. T. Chen, Y. C. Chen, T. H. Lin, L. W. Chang, and Y. F. Chen, Appl. Phys. Lett. 94, 021908 (2009). 7. S. Kurbanov, G. Panin, T. W. Kang, and T. W. Kim, Jpn. J. Appl. Phys. 47, 3760 (2008). 8. I. J. Chen, T. T. Chen, and Y. F. Chen, Appl. Phys. Lett. 89, 142113 (1996). 9. H. K. Fu, C. L. Cheng, C. H. Wang, T. Y. Lin, and Y. F. Chen, Adv. Funct. Mater. 19, 3471 (2009). 10. W. Shan, W. Walukiewicz, J. W. Ager III, K. M. Yu, H. B. Yuan, H. P. Xin, G. Cantwell, and J. J. Song, Appl. Phys. Lett. 86, 191911 (2005). 11. T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Börner, W. Schade, A. C. Mofor, A. Bakin, and A. Waag, Appl. Phys. Lett. 89, 182107 (2006). 12. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996). 13. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996). 14. I. Shalish, H. Temkin, and V. Narayanamurti, Phys. Rev. B 69, 245401 (2004) 15. T. Y. Lin, H. C. Yang, and Y. F. Chen, J. Appl. Phys. 87, 3404 (2000). 16. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, J. Caruso, M. J. Hampden-Smith, and T. T. Kodas, J. Lumin. 75, 11 (1997). 17. A van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Lumin. 87-89, 454 (2000). 18. L. S. Vlasenko, Physica B 404, 4774 (2009). Chapter 4: 1. S. Nakamura, S. J. Pearton, and G. Fasol, The blue laser diode (Springer, Berlin, 2000). 2. G. –D. Hao, Y. H. Chen, and Y. F. Hao, Appl. Phys. Lett. 93, 151111 (2008). 3. A. Niwa, T. Ohtoshi, and T. Kuroda, Appl. Phys. Lett. 70, 2159 (1997). 4. T. N. Oder, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 12 (2001). 5. H. J. Chang, C. H. Chen, L. Y. Huang, Y. F. Chen, and T. Y. Lin, Appl. Phys. Lett. 86, 011924 (2005). 6. J. Kim, K. Baik, C. Park, S. Cho, S. J. Pearton, and F. Ren, phys. stat. sol. (a) 203, 2393 (2006). 7. P. D. Greene, U. S. Patent, 5017974 (1991). 8. J.E. Mark, Polymer Data Handbook (Oxford University Press, Oxford, 2009). 9. T. Y. Lin, Appl. Phys. Lett. 82, 880 (2003). 10. H. J. Chang, Y. P. Hsieh, T. T. Chen, Y. F. Chen, C. –T. Liang, T. Y. Lin, S. C. Tseng, and L. C. Chen, Opt. Exp. 15, 9357 (2007). 11. B. Yan, R. Chen, W. Zhou, J. Zhang, H. Sun, H. Gong, and T. Yu, Nanotechnology 21, 445706 (2010). 12. X. Han, L. Kou, X. Lang, J. Xia, N. Wang, R. Qin, J. Lu, J. Xu, Z. Liao, X. Zhang, X. Shan, X.Song, J. Gao, W. Guo, and D. Yu, Adv. Mater. 21, 4937 (2009). 13. Y. Gao and Z. L. Wang, Nano Lett. 7, 2499 (2007). 14. Z. Z. Shao, L. Y. Wen, D. M. Wu, X. F. Wang, X. A. Zhang, and S. L. Chang, J. Phys. D: Appl. Phys. 43, 245403 (2010). 15. J. Chen, G. Conache, M. –E. Pistol, S. M. Gray, M. T. Borgström, H. Xu, H. Q. Xu, L. Samuelson, and U. Håkanson, Nano Lett. 10, 1280 (2010). 16. A. G. Kontos, Y. S. Raptis, N. T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, D. Jalabert, Phys. Rev. B, 72, 155336 (2005). Chapter 5: 1. J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, “UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering,” Adv. Mater. 18, 2720-2724 (2006). 2. H. K. Fu, C. L. Cheng, C. H. Wang, T. Y. Lin, and Y. F. Chen, “Selective angle electroluminescence of light-emitting diodes based on nanostructured ZnO/GaN heterojunctions,” Adv. Funct. Mater. 19, 3471-3475 (2009). 3. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005). 4. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E Weber, R. Russo, and P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292, 1897-1899 (2001). 5. N. E. Hsu, W. K. Hung, and Y. F. Chen, “Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods,” J. Appl. Phys. 96, 4671-4673 (2004). 6. M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, and J. Cho, “Origin of defect emission identified by polarized luminescence from aligned ZnO nanorods,” Appl. Phys. Lett. 91, 051117 (2007). 7. H. S. Chen, C. W. Chen, C. H. Wang, F. C. Chu, C. Y. Chao, C. C. Kang, P. T. Chou, and Y. F. Chen, “Color-tunable light-emitting device based on the mixture of CdSe nanorods and dots embedded in liquid-crystal cells,” J. Phys. Chem. C 114, 7995-7995 (2010). 8. N. Kikuchi, “Analysis of signal degree of polarization degradation used as control signal for optical polarization mode dispersion compensation,” J. Lightwave Technol. 19, 480-486 (2001). 9. J. R. Law, “Color selection polarizing beam splitter,” U. S. Patent 3497283 (1970). 10. S. J. Savory, “Digital filters for coherent optical receivers,” Opt. Express 16, 804-817 (2008). 11. C. Bayram, F. H. Teherani, D. J. Rogers, and M. Razeghi, “A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN,” Appl. Phys. Lett. 93, 081111 (2008). 12. M. Guo, P. Diao, and S. Cai, “Hydrothermal growth of well-aligned ZnO nanorod arrays: Dependence of morphology and alignment ordering upon preparing conditions,” J. Sol. Sta. Chem. 178, 1864-1873 (2005). 13. C. F. Huang, C. F. Lu, T. Y. Tang, J. J. Huang, and C. C. Yang, “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells,” Appl. Phys. Lett. 90, 151122 (2007). 14. Y. T. Moon, D. J. Kim, K. M. Song, I. H. Lee, M. S. Yi, D. Y. Noh, C. J. Choi, T. Y. Seong, and S. J. Park, “Optical and structural studies of phase separation in InGaN film grown by MOCVD,” Phys. Stat. Sol. (b) 216, 167-170 (1999). 15. J. von Pezold and P. D. Bristowe, “Atomic structure and electronic properties of the GaN/ZnO (0001) interface,” Journal of Materials Science 40, 3051-3057 (2004). 16. K. W. Jang, D. C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M. W. Cho, T. Yao, and S. K. Hong, “ZnO/GaN heteroepitaxy,” Mater. Res. Soc. Symp. Proc. 829, B10.3.1-B10.3.12 (2005). 17. E. Fred Schubert, Light-Emitting Diodes, 2nd edition, (Cambridge University Press, 2006), Chap. 4. 18. E. H. Park, D. N. H. Kang, I. T. Ferguson, S. K. Jeon, J. S. Park, and T. K. Yoo, “The effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN multiquantum well light emitting diode,” Appl. Phys. Lett. 90, 031102 (2006). 19. Z. Z. Bandic, P. M. Bridger, E. C. Piquette, and T. C. McGill, “Minority carrier diffusion length and lifetime in GaN,” Appl. Phys. Lett. 72, 3166-3168 (1998). 20. J. Y. Wang, C. Y. Lee, Y. T. Chen, C. T. Chen, Y. L. Chen, C. F. Lin, and Y. F. Chen, “Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions,” Appl. Phys. Lett. 95, 131117 (2009). 21. E. Hecht, Optics, 4th edition (Addison Wesley, 2002), Chap. 8. 22. T. Y. Lin, “Converse piezoelectric effect and photoelastic effect in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 82, 880-882 (2003). 23. K. J. Wu, K. C. Chu, C. Y. Chao, Y. F. Chen, C. W. Lai, C. C. Kang, C. Y. Chen, and P. T. Chou, “CdS nanorods imbedded in liquid crystal cells for smart optoelectronic devices,” Nano Lett. 7, 1908-1913 (2007). 24. H. K. Fu, C.W. Chen, C.H. Wang, T. T. Chen, and Y. F. Chen, “Creating optical anisotropy of CdSe/ZnS quantum dots by coupling to surface plasmon polariton resonance of a metal grating,” Opt. Express 16, 6361-6367 (2008). 25. N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86, 111101 (2005). Chapter 6: Clark, L. C. Jr.; Lyons, C. Ann. N.Y. Acad. Sci. 1962, 102, 29. 2. Park, S.; Boo, H.; Chung, T. D. Anal. Chim. Acta 2006, 556, 46. 3. Kim, S. N.; Rusling, J. F.; Papadimitrakopoulos, F. Adv. Mater. 2007, 19, 3214. 4. Yan, Yi-Ming; Ran, Tel-Vered; Yehezkeli, O.; Cheglakov, Z.; Willner, I. Adv. Mater. 2008, 20, 2365. 5. Heo, Y. W.; Norton, D. P.; Tien, L. C.; Kwon, Y.; Kang, B. S.; Ren, F.; Pearton, J. S.; LaRoche, J. R. Mater. Sci. Eng. R. 2004, 47, 1. 6. Wang, H. T.; Kang, B. S.; Ren, F.; Tien, L. C.; Sadik, P. W.; Norton, D. P.; Pearton, S. J.; Lin, J. Appl. Phys. Lett. 2005, 86, 243503. 7. Kang, B. S.; Ren, F.; Heo, Y. W.; Tien, L. C.; Norton, D. P.; Pearton, S. J. Appl. Phys. Lett. 2005, 86, 112105. 8. Fan, Z. Y.; Lu, J. G. J. Nanosci. Nanotechnol. 2005, 5, 1561. 9. Wang, J. X.; Sun, X. W.; Wei, A.; Lei, Y.; Cai, X. P.; Li, C. M.; Dong, Z. L. Appl. Phys. Lett. 2006, 88, 233106. 10. Wei, A.; Sun, X. W.; Wang, J. X.; Lei, Y.; Cai, X. P.; Li, C. M.; Dong, Z. L.; Huang, W. Appl. Phys. Lett. 2006, 89, 123902. 11. Nakamura, S.; Pearton, S.; Fasol, G. The blue laser diode: GaN based light emitters and lasers, 2nd edition; Springer: New York, 1997; pp1–5. 12. Takeuchi, T.; Sota, S.; Katsuragawa, M.; Komori, M.; Takeuchi, H.; Amano, H.; Akasaki, I. Jpn. J. Appl. Phys., Part 2 1997, 36, L382. 13. Bernardini, F.; Fiorentini, V.; Vanderbilt, D. Phys. Rev. B 1997, 56, R10024. 14. Huang, C. F.; Chen, C. Y.; Lu, C. F.; Yang, C. C. Appl. Phys. Lett. 2007, 91, 051121. 15. Kang, B. S.; Wang, H. T.; Ren, F.; Pearton, S. J.; Morey, T. E.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J. Appl. Phys. Lett. 2007, 91, 252103. 16. Guo, M.; Diao, P.; Cai, S.; J. Sol. Sta. Chem. 2005, 178, 1864. 17. Chiua, J. Y.; Yua, C. M.; Yena, M. J.; Chen, L. C. Biosensors and Bioelectronics 2009, 24, 2015. 18. Lin, T. Y. Appl. Phys. Lett. 2003, 82, 880. 19. Shih, H. Y.; Chen, T. T.; Wang, C. H.; Chen, K. Y.; Chen, Y. F. Appl. Phys. Lett. 2008, 92, 261910. 20. Chen, C. H.; Chen, W. H.; Chen, Y. F.; Lin, T. Y. Appl. Phys. Lett. 2003, 83,1770. 21. Wang, F. C.; Cheng, C. L.; Chen, Y. F.; Huang, C. F.; Yang, C. C. Semicond. Sci. Technol. 2007, 22, 896. 22. Kontos, A. G.; Raptis, Y. S.; Pelekanos, N. T.; Georgakilas, A.; Bellet-Amalric, E.; Jalabert, D. Phys. Rev. B 2005, 72, 155336. Chapter 7: H. Y. Shih, Y. T. Chen, N. H. Huang, C. M. Wei, and Y. F. Chen, J. Appl. Phys. 109, 103523 (2011). 2. C. Bayram, F. Hosseini Teherani, D. J. Rogers, and M. Razeghi, Appl. Phys. Lett. 93, 081111 (2008). 3. C. Y. Huang, Y. J. Yang, J. Y. Chen, C. H. Wang, Y. F. Chen, L. S. Hong, C. S. Liu, and C. Y. Wu, Appl. Phys. Lett. 97, 013503 (2010). 4. C. T. Chen, F. C. Hsu, S. W. Kuan, and Y. F. Chen, Solar Energy Materials and Solar Cells 95, 740 (2011). 5. S. C. Hung, C. W. Chen, C. Y. Shieh, G. C. Chi, R. Fan, and S. J. Pearton, Appl. Phys. Lett. 98, 223504 (2011). 6. O. Lupan, V. V. Ursaki, G. Chai, L. Chow, G. A. Emelchenko, I. M. Tiginyanu, A. N. Gruzintsev, and A. N. Redkin, Sensors and Actuators B 144, 56 (2010). 7. Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, J. P. Li, and C. L. Lin, Appl. Phys. Lett. 84, 3654 (2004). 8. J. X. Wang, X. W. Sun, Y. Yang, H. Huang, Y. C. Lee, O. K. Tan, and L. Vayssieres, Nanotechnology 17, 4995 (2006). 9. R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 94, 063505 (2009). 10. T. Y. Lin, Appl. Phys. Lett. 82, 880 (2003). 11. C. F. Huang, C. Y. Chen, C. F. Lu, and C. C. Yang, Appl. Phys. Lett. 91, 051121 (2007). 12. M. Guo, P. Diao, and S. M. Cai, Journal of Solid State Chemistry 178, 1864 (2005). 13. M. Takata, D. Tsubone, and H. Yanagida, Journal of the American Ceramic Society 59, 4 (1976). 14. M. K. Kumar and S. Ramaprabhu, Journal of Physical Chemistry B 110, 11291 (2006). 15. G. Papoian, J. K. Norskov, and R. Hoffmann, Journal of the American Chemical Society 122, 4129 (2000). 16. H. Y. Shih, Y. T. Chen, C. M. Wei, M. H. Chan, J. K. Lian, Y. F. Chen, and T. Y. Lin, J. Phys. Chem. C 115, 14664 (2011). 17. A. G. Kontos, Y. S. Raptis, N. T. Pelekanos, A. Georgakilas, E. Bellet-Amalric, and D. Jalabert, Phys. Rev. B 72, 155336 (2005). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/6670 | - |
dc.description.abstract | 本論文主要目的在於探討氧化鋅奈米結構、氮化銦鎵/氮化鎵多重量子井,以及其複合物之新奇物理特性,並發掘這些新奇特性的可能應用。我們所獲得的成果不論是在學術上或是工業上均有極大的應用潛力,今將主要成果摘要如下:
1. 藉由第二束低於能隙的光來調變氧化鋅一維奈米結構的光激螢光和光導電性 氧化鋅奈米柱和奈米絲帶的光激螢光和光導電性是可以藉由另一道低於能隙的光束來調變的。我們將第二道光束照射在氧化鋅奈米柱和奈米絲帶時,本來被第一道紫外線雷射激發的螢光和導電性都減弱了,而且我們藉由實驗來排除熱效應的可能性。當第二道光的波長為520 nm時,削弱效應最明顯,這個波長剛好對應到氧化鋅內兩個氧缺陷能階之間的躍遷。藉由不同直徑的奈米柱來重複以上實驗,我們驗證了缺陷存在於表面區域。藉由改變第二道光的強度來重複以上實驗,更支持了我們所提出來的機制。 2. 氮化銦鎵/氮化鎵多層量子碟受到外應力引發的對稱光學特性 我們研究了外力對氮化銦鎵/氮化鎵多層量子碟光學特性的影響。因壓電效應和量子侷限史塔克效應,當一股橫向應力施加在多層量子碟時,光激螢光和拉曼散射光譜都被改變了。有趣的是,光譜改變的行為呈現六角形對稱。這詭譎的現象可被歸因為晶格本身存在著六角形對稱,而且彈性薄膜又沿著某些特定的方向來拉扯樣品的晶格。此實驗成果可以提供另外一種面向來推廣與應用氮化物半導體所構成的光電元件並使其效能最佳化。 3. 氧化鋅奈米柱和氮化銦鎵/氮化鎵多層量子井構成可調變顏色的發光元件 我們將氧化鋅奈米柱成長在氮化銦鎵/氮化鎵多層量子上,我們建構了一種可發射兩種波長的新穎發光元件。有趣的是,這兩種發射光譜可以藉由偏振的選擇性來調變它們的相對強度。其背後的機制可歸因於這兩種奈米結構的幾何形狀恰好呈現互相垂直的方向。此實驗成果可以拓展到其他具有類似結構的複合材料,並且替可調變式發光元件開闢一個新的研究方向。 4. 藉由酵素修飾氧化鋅奈米柱和氮化銦鎵/氮化鎵多層量子井的光學特性來偵測葡萄糖 因奈米柱的表面積對體積比例很高,且氮化物壓電材料對電場很敏感,我們採用酵素修飾過的奈米柱與氮化物發光元件構成的複合材料來偵測葡萄糖分子。比起傳統必須監控電流的感測器,我們卻選擇監控發光元件的光譜,使測量和製程更加簡單。氧化鋅奈米柱和氮化銦鎵/氮化鎵多層量子井建構而成的感測元件暴露在葡萄糖溶液後,其光激螢光和拉曼散射光譜即產生顯著的變化。此實驗成果提供了一種新穎且高敏感度的光學式感測元件。 5. 藉由鉑粒子修飾氧化鋅奈米柱和氮化銦鎵/氮化鎵多層量子井的光學特性來偵測氫氣 延續前一個研究工作,我們採用包含鉑粒子修飾過的奈米柱與氮化物發光元件構成的複合材料來偵測氫氣分子。比起傳統必須監控電流的感測器,我們卻選擇監控發光元件的光譜,使測量和製程更加簡單。氧化鋅奈米柱和氮化銦鎵/氮化鎵多層量子井建構而成的感測元件暴露在葡萄糖溶液後,其光激螢光和拉曼散射光譜即產生顯著的變化。此元件的結構可推廣應用於感測其他種類的化學或生物分子。 | zh_TW |
dc.description.abstract | In this dissertation, we mainly focus on the study of the physical properties of ZnO nanostructures, InGaN/GaN multiple quantum wells, and their composites. Based on the discovered novel properties, we attempt to develop their potential applications. A brief description of our main findings has been summarized as follows. It is believed that our results shown here should be very useful for the general interests both in academics as well as industry
1. Tunable Photoluminescence and Photoconductivity in ZnO One-dimensional Nanostructures with a Second Below-gap Beam Tunable photoluminescence (PL) and photoconductivity (PC) with a second below-gap beam were demonstrated on ZnO nanorods and nanoribbons. We found that both PL and PC could be quenched as the second beam was applied on the nanostructures, and this behavior was excluded from thermal effect by comparing the phonon replica spectra with that of heating the sample directly. The most quenching effect occurred near the defect transition locating at 520 nm. The underlying mechanism of the quenching behavior was attributed to the defect transition between different states of oxygen vacancies. Size-dependence measurement lets us know the effect occurs near the surface of nanostructures, and the power-dependent measurement further confirms the underlying mechanism we proposed. 2. Symmetrically Tunable Optical Properties of InGaN/GaN Multiple Quantum Disks by an External Stress The influence of an external stress on the optical properties of InGaN/GaN multiple quantum disks (MQDs) has been investigated. As a transversal force is applied on the MQDs, both photoluminescence and Raman scattering spectra are altered due to the piezoelectric potential accompanied by the quantum confined Stark effect. Quite interestingly, it is found that the optical spectra possess a sixfold symmetry about the c-axis. This intriguing phenomenon can be attributed to the inherent nature of hexagonal lattice as well as the good flexibility of the composite consisting of polydimethylsiloxane and MQDs. Our results can provide an alternative route to optimize and extend the application of nitride-based devices. 3. Light-emitting Devices with Tunable Color from ZnO Nanorods Grown on InGaN/GaN Multiple Quantum Wells Based on the composite consisting of ZnO nanorods (NRs) grown on InGaN/GaN multiple quantum wells (MQWs), we have demonstrated a novel light-emitting device (LED) that has the capability to emit dual beam radiations. Interestingly, the relative intensity between the dual emissions is able to be manipulated by their polarizations. The underlying mechanism can be well understood in terms of the anisotropic optical properties arising from the geometric structures of constituent nanoscale materials. The results shown here may be extended to many other nanocomposite systems and pave a new pathway to create LEDs with tunable properties. 4. Optical Detection of Glucose Based on the Composite Consisting of Enzymatic ZnO Nanorods and InGaN/GaN Multiple Quantum Wells Based upon the high surface-to-volume ratio of nanorods and high sensitivity of piezoelectric properties of nitride semiconductors, enzymatic functionalized composite consisting of nanorods and nitride light emitting devices (LEDs) provide an excellent opportunity for the development of glucose detectors using optical methods. To demonstrate our working principle, a sensing device based on InGaN/GaN multiple quantum wells and ZnO nanorods has been constructed and exposed to target glucose solutions. The pronounced changes of emission as well as Raman scattering spectra under different target glucose concentrations clearly illustrate the feasibility of our newly designed composite for the creation of highly sensitive biosensors with optical detection. 5. Optical Detection of Hydrogen Gas Using Pt-catalyzed ZnO Nanorods and InGaN/GaN Multiple Quantum Wells Based upon the high surface-to-volume ratio of nanorods and high sensitivity of piezoelectric properties of nitride semiconductors, catalyst decorated composite consisting of nanorods and nitride light-emitting devices (LEDs) provide an excellent opportunity for the development of gas detectors using optical methods. To demonstrate our working principle, a sensing device based on the composite consisting of InGaN/GaN multiple quantum wells (MQWs) and Pt-catalyzed ZnO nanorods has been fabricated and exposed to target hydrogen gas. The pronounced changes of emission as well as Raman scattering spectra of InGaN/GaN MQWs under different target gas concentrations clearly illustrate the feasibility of our newly designed composites for the creation of highly sensitive gas sensors with optical detection. | en |
dc.description.provenance | Made available in DSpace on 2021-05-17T09:16:03Z (GMT). No. of bitstreams: 1 ntu-101-D97222022-1.pdf: 3044470 bytes, checksum: 8f8562b3ac5d036f064f8b9e23b0bde5 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 致謝 (Acknowledgements)……………………………………I
摘要……………………………………………………………III Abstract………………………………………………………VI Contents…………………………………………………………X Figure Captions………………………………………………XII Publications in Recent Five Years………………………XVII Chapter 1 Introduction to this Dissertation…………1 Chapter 2 Background Knowledge……………………………7 2.1 Techniques of Measurements………………………7 2.1.1 Spectroscope (Spectrometer)………………7 2.1.2 Photoluminescence…………………………..14 2.1.3 Raman Scattering…………………………… 20 2.1.4 X-ray Diffraction……………………………26 2.1.5 Scanning Electron Microscope……………28 2.2 Growth Methods……………………………………35 2.2.1 Metal-organic Chemical Vapor Deposition…35 2.2.2 Vapor-Liquid-Solid Growth…………… 38 2.2.3 Hydrothermal Growth of ZnO Nanorods…..40 2.2.4 DC Sputtering Deposition…………………40 2.3 Physics of Materials………………………42 2.3.1 Piezoelectricity………………………………42 2.3.2 Quantum Confined Stark Effect……………44 2.3.3 Zinc Oxide…………………………………….45 2.3.4 III-nitride Semiconductors…………………48 2.3.5 Light-emitting Diodes………………………51 Chapter 3 Tunable Photoluminescence and Photoconductivity in ZnO One-dimensional Nanostructures with a Second Below-gap Beam…………………………………………………………57 3.1 Introduction…………………………………………57 3.2 Experiment……………………………………………58 3.3 Results and Discussion……………………………59 3.4 Conclusion……………………………………………70 Chapter 4 Symmetrically Tunable Optical Properties of InGaN/GaN Multiple Quantum Disks by an External Stress……………. 73 3.1 Introduction………………………………………73 3.2 Experiment…………………………………………74 3.3 Results and Discussion…………………………77 3.4 Conclusion………………………………………84 Chapter 5 Light-emitting Devices with Tunable Color from ZnO Nanorods Grown on InGaN/GaN Multiple Quantum Wells 87 3.1 Introduction…………………………………………87 3.2 Experiment……………………………………………89 3.3 Results and Discussion……………………………92 3.4 Conclusion……………………………………………100 Chapter 6 Optical Detection of Glucose Based on the Composite Consisting of Enzymatic ZnO Nanorods and InGaN/GaN Multiple Quantum Wells……………………………………. 105 3.1 Introduction………………………………………105 3.2 Experiment…………………………………………107 3.3 Results and Discussion…………………………109 3.4 Conclusion…………………………………………117 Chapter 7 Optical Detection of Hydrogen Gas Using Pt-catalyzed ZnO Nanorods and InGaN/GaN Multiple Quantum Wells.. 121 3.1 Introduction………………………………………121 3.2 Experiment…………………………………………123 3.3 Results and Discussion…………………………126 3.4 Conclusion…………………………………………133 Chapter 8 Summary of this Dissertation………………………………137 | |
dc.language.iso | en | |
dc.title | 半導體奈米結構之研究與應用:氧化鋅、三族氮化物、以及其奈米複合材料 | zh_TW |
dc.title | Studies and Applications of Semiconductor Nanostructures: ZnO, III-nitrides, and Their Nanocomposites | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 梁啟德,林唯芳,林泰源,沈志霖,黃鶯聲 | |
dc.subject.keyword | 半導體,奈米科技,氧化鋅,三族氮化物, | zh_TW |
dc.subject.keyword | semiconductor,nanotechnology,ZnO,III-nitrides, | en |
dc.relation.page | 158 | |
dc.rights.note | 同意授權(全球公開) | |
dc.date.accepted | 2012-08-07 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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