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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 周元昉 | |
| dc.contributor.author | Wen-Kuei Cheng | en |
| dc.contributor.author | 鄭文逵 | zh_TW |
| dc.date.accessioned | 2021-06-17T00:49:01Z | - |
| dc.date.available | 2016-12-08 | |
| dc.date.copyright | 2011-12-08 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-12-05 | |
| dc.identifier.citation | [1] Danny Reuter, Andreas Bertz, Detlef Billep, Dirk Scheibner, Wolfram Dotzel, Thomas Gessner, “In-Process Gap Reduction of Capacitive Transducers”, Sensors and Actuators A 126, pp. 211–217, 2006
[2] Suraj Kumar Patil, Student Member, IEEE, Zeynep C﹐ elik-Butler, Senior Member, IEEE,and Donald P. Butler, Senior Member, IEEE, “Nanocrystalline Piezoresistive Polysilicon Film by Aluminum-Induced Crystallization for Pressure-Sensing Applications, ” IEEE Transactions on Nanotecnology, VOL. 9, NO. 5, pp. 640–646, 2010 [3] Abhijeet V. Chavan, “Batch-Processed Vacuum-Sealed Capacitive Pressurev Sensors”, Journal of Microelectro Mechanical Systems, VOL. 10, NO. 4, pp. 580–588, 2001 [4] Satoshi Yamamoto, Hironari Nakamura, Hitoshi Nishimura, Takanao Suzuki, “Touch Mode Capacitive Pressure Sensor”, Fujikura Technical Review, pp. 45–49, 2003 [5] B. Puers, E. Peeters, A. Vanden and W. Sansen, “A Capacitive Pressure Sensor with Low Impedance Output and Active Suppression of Parasitic Effects”, Sensors and Actuators A 21-A23, pp. 108–114, 1990 [6] Ferry N. Toth and Gerard C. M. Meijer, “A Low-Cost, Smart Capacitive Position Sensor”IEEE Transactions on Instrumentation and Measurememt, VOL 41, NO 6, pp. 1041–1044, 1992 [7] Hyeoncheol Kin, Yong-Gwon Jeong, Kukjin Chun, “Improvement of the Linearity of a Capacitive Pressure Sensor Using an Interdigitated Electrode Structure”, Sensors and Actuators A 62, pp. 586-590, 1997 [8] Sherif Saleh, Amal Zaki, Hamed Elsemary S. Ahmad, “Modeling of Sensitivity of Fabricated Capacitive Sensor”, IEEE Industrial Electronics, IECON 2006-32nd Annual Conference, pp. 3166-3169, 2006 [9] Cheng Pang, Zhan Zhao, Lisong Du, Zhen Fang, “Adhesive Bonding with SU-8 in a Vacuum for Capacitive Pressure Sensors”, Sensors and Actuators A 147, pp. 672–676, 2008 [10] Wen H. Ko, Min-Hangbao, Yeun-Ding Hong, “A High Sensitivity Integrated Circuit Capacitive Pressure Transducer”, IEEE Transactions on Electron Device, Vol.29, NO.1, pp. 48-59, 1982. [11] M. Habibi, E. Lueder, T. Kallfass, and D. Horst, “Surface Micromachined Capacitive Absolute Pressure Sensor Array on a Glass Substrate”, Sensors and Actuators A: Physical, Vol. 46, pp.125-128, 1995 [12] Wen H. Ko, Darrin J. Young, Jun Guo, Michael Suster, Hung-I Kuo, N. Chaimanonart, “A high-performance MEMS Capacitive Strain Sensing System”, Sensors and Actuators A 133, vol 272–277, 2007 [13] Yunho Kim, Hyungchul Kim, and Junghoon Lee, “Silicon-based Capacitive Load Cell for Tensile Load Measurement”, DTIP 2009 of MEMS & MOEMS , 1-3 April, Rome, 2009 [14] 梁冰、呂雙、王小科, “C# 程式開發範例集”,明日科技, 上奇資訊股份有限公司發行, 2010 [15] 李啟龍, “Visual C# 2010 程式設計16堂課”, 碁峰資訊股份有限公司發行, 2011 [16] John Sharp, “循序漸進學 Microsoft Visual C# 2008 官方版教材 ”, 博碩文化發行, 2008 [17] 呂高旭、周殷德, “Visual C# 2010精要剖析”, 松崗出版社發行, 2011 [18] 鄞永傳, “Visual C# 視窗程式設計入門：繪圖程式範例與遊戲專題”, 松崗出版社發行, 2009 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66652 | - |
| dc.description.abstract | 本文旨在研發一檢測器能夠線上檢測手機內部SIM卡與插槽觸腳的接觸力，以防止SIM卡接觸不良的問題。而由於SIM卡插槽內共有六到八個彈性簧片的觸腳，所以利用微製程來製作一個具有八個電容式荷重元的檢測器，荷重元本身為一組平行板電容，當受力之後會使得上下電極的間距改變，進而改變電容值，即可藉由量測電容值的變化以推算出負載的大小。
為了防止因受力過大導致受力面的矽基板損毀但又希望上電極的位移要夠大以獲得較大靈敏度，因此先利用有限元素法軟體ANSYS進行一系列模擬，以獲取較佳的受力結構，再將該結構的變位節點匯入ANSYS的靜電模型中計算電容，並調整各電極間距、尺寸以及幾何形狀，以達最佳的靈敏度與解析度。 荷重元電容值的讀取係採用高解析度電容數位轉換晶片AD7150，並搭配C#程式語言所編寫的視窗軟體，將AD7150內的暫存器資料讀取至電腦，經校正後繪製出各荷重元的校正曲線，還具備線上檢測受力情況以及繪製荷重歷時曲線等功能。 製作完成的感測器經過校正後，解析度可達0.45g/fF。 | zh_TW |
| dc.description.abstract | This thesis focus on the developing of a sensor to detect the contact forces between SIM card and SIM card contact pins in situ. This detector can help to prevent open circuit SIM card and SIM card contact pins. There are six to eight contact pins per SIM card slot which are made of flexible metal reed. The detector consists of eight load cells is fabricated with MEMS techniques. Each load cell is a parallel plate capacitor which capacitance is a function of the external force applied. Therefore the contact force can be obtained by measuring the capacitance,
In order to prevent damage of silicon structure caused by external force and also to maintain larger deflection of the moving electrode, finite element analysis was conducted to find the optimal dimensions. Then the deflection of the upper plate was imported into ANSYS models to calculate capacitance. Then the electrode spacing and size can be adjusted to achieve optimal electrode geometry, capacitance variation and resolution. High resolution capacitance to digital converter AD7150 was adopted to read the capacitance value of load cells. The data in AD7150 registers were imported into computer via a C# program. Recorded data were used to calibrate load cells, detecting the external force and constructing the loading history. The resolution of detector developed can reach 0.45g/fF. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T00:49:01Z (GMT). No. of bitstreams: 1 ntu-100-R98522529-1.pdf: 3680135 bytes, checksum: 85e9bc85e77b2704e91c3ebc7ce6623d (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 摘要 i
Abstract ii 目錄 iii 表目錄 v 圖目錄 vi 第一章 緒論 1 1.1 前言 1 1.2 荷重元的種類與原理 1 1.3文獻回顧 2 1.4 本文內容 4 第二章 SIM卡檢測器的設計概念 6 2.1 檢測器構造 6 2.2 荷重元構造 6 2.2.1 電容感測電極 7 2.2.2 彈性變形結構 7 2.2.3 材料 8 2.3 銅箔基板 9 第三章 電容式力感測器原理 10 3.1 平行板電容效應及其理論 10 3.2 多導體系統之電容 11 3.3 荷重元電極形狀設計 13 第四章 荷重元之模擬分析 15 4.1 有限元素法軟體模擬分析流程與方法 15 4.2 靜電場模型的建置與求解 17 4.3 第一組電極模擬分析 18 4.3.1 上下電極間距為5μm 18 4.3.2 上下電極間距為10μm 20 4.4 第二組電極模擬分析 21 4.5 判讀誤差比較 21 第五章 信號處理系統架構 23 5.1 硬體架構 23 5.2 I2C通訊協定 23 5.2.1 傳輸格式 24 5.3 A/D訊號處理 25 5.4 軟體架構 26 5.4.1 信號讀取 27 5.4.2 最小二乘法(The least square method) 28 5.4.3 校正檔的建立以及存取 30 5.4.4 多執行緒 31 5.5 量測結果 32 第六章 結論與建議 33 參考文獻 34 附表 37 附圖 40 | |
| dc.language.iso | zh-TW | |
| dc.subject | 電容式力感測器 | zh_TW |
| dc.subject | AD7150 | zh_TW |
| dc.subject | SIM卡插槽 | zh_TW |
| dc.subject | C# | zh_TW |
| dc.subject | SIM card contact pins | en |
| dc.subject | Capacitive force sensor | en |
| dc.subject | AD7150 | en |
| dc.subject | C# | en |
| dc.title | SIM卡電極接觸力線上檢測器之研發 | zh_TW |
| dc.title | Load cell for in Situ Measurement of SIM Card
Electrode Contact Force | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張家歐,陳漢明,莊嘉揚 | |
| dc.subject.keyword | 電容式力感測器,SIM卡插槽,AD7150,C#, | zh_TW |
| dc.subject.keyword | Capacitive force sensor,SIM card contact pins,AD7150,C#, | en |
| dc.relation.page | 96 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-12-05 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 機械工程學研究所 | zh_TW |
| 顯示於系所單位： | 機械工程學系 | |
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