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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66194完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任(Yuh-Renn Wu) | |
| dc.contributor.author | Jhih-Hao Lin | en |
| dc.contributor.author | 林稚皓 | zh_TW |
| dc.date.accessioned | 2021-06-17T00:25:09Z | - |
| dc.date.available | 2022-02-13 | |
| dc.date.copyright | 2020-02-13 | |
| dc.date.issued | 2020 | |
| dc.date.submitted | 2020-02-11 | |
| dc.identifier.citation | [1] G. Moore, 'Cramming more components onto integrated circuits,' Electronics, vol. 38, p. 114, 1965.
[2] M. Ieong, B. Doris, J. Kedzierski, K. Rim, and M. Yang, 'Silicon device scaling to the sub-10-nm regime,' Science, vol. 306, no. 5704, pp. 2057-2060, 2004. [3] B. Davari, R. H. Dennard, and G. G. Shahidi, 'Cmos scaling for high performance and low power-the next ten years,' Proceedings of the IEEE, vol. 83, no. 4, pp. 595-606, 1995. [4] S.-H. Oh, D. Monroe, and J. M. Hergenrother, 'Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs,' IEEE Electron Device Letters, vol. 21, no. 9, pp. 445-447, 2000. [5] K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, 'Leakage current mechanisms and leakage reduction techniques in deep-submicrometer cmos circuits,' Proceedings of the IEEE, vol. 91, no. 2, pp. 305-327, 2003. [6] J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. A. Fitzgerald, and D. A. Antoniadis, 'Strained silicon MOSFET technology,' IEEE, pp. 23-26, 2002. [7] J. Kittl, K. Opsomer, M. Popovici, N. Menou, B. Kaczer, X. Wang, C. Adelmann, M. Pawlak, K. Tomida, A. Rothschild, et al., 'High-k dielectrics for future generation memory devices,' Microelectronic engineering, vol. 86, no. 7-9, pp. 1789-1795, 2009. [8] I. Ferain, C. A. Colinge, and J.-P. Colinge, 'Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors,' Nature, vol. 479, no. 7373, p. 310, 2011. [9] D. Hisamoto, W.-C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T.-J. King, J. Bokor, and C. Hu, 'Finfet-a self-aligned double-gate mosfet scalable to 20 nm,' IEEE transactions on electron devices, vol. 47, no. 12, pp. 2320-2325, 2000. [10] V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, and U. G osele, 'Realization of a silicon nanowire vertical surround-gate field-effect transistor,' small, vol. 2, no. 1, pp. 85-88, 2006. [11] E. B. Ramayya, D. Vasileska, S. M. Goodnick, and I. Knezevic, 'Electron mobility in silicon nanowires,' IEEE Transactions on Nanotechnology, vol. 6, no. 1, pp. 113-117, 2007. [12] W. A. de Heer and C. Berger, 'Epitaxial graphene,' Journal of Physics D: Applied Physics, vol. 45, no. 15, p. 150301, 2012. [13] K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, 'Phonon-limited mobility in n-type single-layer MoS2 from first principles,' Physical Review B, vol. 85, no. 11, p. 115317, 2012. [14] K. Lathrop and B. Carlson, 'Numerical solution of the boltzmann transport equation,' Journal of Computational Physics, vol. 1, no. 2, pp. 173-197, 1966. [15] C. Jacoboni and L. Reggiani, 'The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials,' Reviews of Modern Physics, vol. 55, pp. 645-705, 1983. [16] P. C. Martin and J. Schwinger, 'Theory of many-particle systems. I,' Physical Review, vol. 115, pp. 1342-1373, 1959. [17] L. P. Kadanoff and G. A. Baym, Quantum statistical mechanics: Green's function methods in equilibrium and nonequilibirum problems. Frontiers in Physics, Menlo Park, CA: Benjamin, 1962. [18] L. V. Keldysh, 'Diagram technique for nonequilibrium processes,' Zh. Eksp. Teor. Fiz., vol. 47, pp. 1515-1527, 1964. [19] F. Bloch, 'Uber die quantenmechanik der elektronen in kristallgittern,' Zeitschrift fur Physik, vol. 52, no. 7, pp. 555-600, 1929. [20] J. Singh, Electronic and optoelectronic properties of semiconductor structures. United Kingdom: Cambridge, 2007. [21] M. Willatzen and L. Lew Yan Voon, The k·p Method: Electronic Properties of Semiconductors. Springer-Verlag Berlin Heidelberg, 2009. [22] J. Singh, Electronic and optoelectronic properties of semiconductor structures. Cambridge University Press, 2007. [23] S.-L. Chuang, Physics of Photonic Devices. 2012. [24] N. M. Hugenholtz, 'Perturbation theory of large quantum systems,' Physica, vol. 23, no. 1, pp. 481-532, 1957. [25] E. Ramayya, D. Vasileska, S. Goodnick, and I. Knezevic, 'Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering,' Journal of Applied Physics, vol. 104, no. 6, p. 063711, 2008. [26] K. Ghosh and U. Singisetti, 'Thermoelectric transport coefficients in mono-layer MoS2 and WSe2: Role of substrate, interface phonons, plasmon, and dynamic screening,' Journal of Applied Physics, vol. 118, no. 13, p. 135711, 2015. [27] M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, 'Effective electron mobility in si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering,' Journal of Applied Physics, vol. 90, no. 9, pp. 4587-4608, 2001. [28] A. Laturia, M. L. Van de Put, and W. G. Vandenberghe, 'Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk,' npj 2D Materials and Applications, vol. 2, no. 1, p. 6, 2018. [29] M. Pourfath, H. Kosina, and S. Selberherr, 'A fast and stable Poisson-Schrodinger solver for the analysis of carbon nanotube transistors,' Journal of Computational Electronics, vol. 5, no. 2, pp. 155-159, 2006. [30] S. Walia, S. Balendhran, Y. Wang, R. Ab Kadir, A. Sabirin Zoolfakar, P. Atkin, J. Zhen Ou, S. Sriram, K. Kalantar-Zadeh, and M. Bhaskaran, 'Characterization of metal contacts for two-dimensional MoS2 nanoflakes,' Applied Physics Letters, vol. 103, no. 23, p. 232105, 2013. [31] T. Ando, N. D. Sathaye, K. V. Murali, and E. A. Cartier, 'On the electron and hole tunneling in a HfO2 gate stack with extreme interfacial-layer scaling,' IEEE Electron Device Letters, vol. 32, no. 7, pp. 865-867, 2011. [32] S.-F. Chen and Y.-R.Wu, 'Electronic properties of MoS2 nanoribbon with strain using tight-binding method,' physica status solidi (b), vol. 254, no. 2, p. 1600565, 2017. [33] F. H user, T. Olsen, and K. S. Thygesen, 'How dielectric screening in two-dimensional crystals affects the convergence of excited-state calculations: Monolayer MoS2,' Physical Review B, vol. 88, no. 24, p. 245309, 2013. [34] K. K. Smithe, C. D. English, S. V. Suryavanshi, and E. Pop, 'High- field transport and velocity saturation in synthetic mono-layer MoS2,' Nano letters, vol. 18, no. 7, pp. 4516-4522, 2018. [35] L. De Broglie, 'Waves and quanta,' Nature, vol. 112, no. 2815, p. 540, 1923. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66194 | - |
| dc.description.abstract | 近年來，隨著金氧半場效電晶體的柵極長度縮小到20奈米以下，因為量子特性沒有被考慮在內的關係，導致傳統的載子傳輸模擬系統，像是漂移擴散模型，無法準確描述載子的傳輸行為。因此，像是能夠考慮載子波特性的非平衡格林函數量子傳輸模擬軟體，對我們研究載子傳輸問題有其存在的意義。在此研究中，我們開發了一個能夠計算在二維材料電晶體中的電子-聲子散射、摻雜離子散射和遠程聲子散射的非平衡格林函數與泊松方程式耦合的自洽求解二維量子傳輸模擬軟體來模擬在電晶體中的載子傳輸特性。藉由此模擬，我們可以發現元件的性能主要取決於由周圍材料引起的遠程聲子散射和由通道材料自己引起的電子-聲子散射，以及帶電離子的散射，並且隨著柵極電壓的增加，變形電位散射在電晶體中會變得越來越重要。此外，根據自洽求解的結果，我們可以模擬像是臨界電壓、次臨界擺幅、飽和區以及源極到漏極的穿隧電流等二維材料電晶體的輸出和傳輸特性。最後，本文將對傳統漂移擴散傳輸模型與非平衡格林函數與泊松方程式耦合的自洽求解量子傳輸模型進行比較與討論。 | zh_TW |
| dc.description.abstract | In recent years, as the gate length of metal-oxide-semiconductor field-effect transistor scaled down below 20 nm, the traditional carrier transport program such as drift-diffusion model could not accurately describe the behavior of carrier transport since the quantum effects could not be taken into account. To solve this issue, the quantum transport simulator like non-equilibrium Green's function formalism which includes the wave nature of carriers is proposed to study the carrier transport problem. In this thesis, the major focus is to develop a suitable NEGF simulator for two-dimensional (2D) material such as MoS2 and WS2. Therefore, a 2D quantum transport simulator based on self-consistent Poisson-NEGF program is developed to simulate the characteristics of carrier transport with considering the electron-phonon scattering, impurity scattering, and remote phonon scattering in 2D material based transistors. The result shows that the performance of transistor is determined by both the remote phonon scattering caused from the surrounding material and the deformation potential scattering induced from the channel material itself. The deformation potential scattering would be the dominant factor in the transistor as the gate voltage increases. In addition, according to the result of self-consistent Poisson-NEGF program, the electronic properties of output and transfer characteristic of 2D material such as threshold voltage, subthreshold swing, current saturation and the tunneling current from source to drain can be simulated. Finally, the comparison of the traditional Poisson and drift-diffusion transport model and Poisson-NEGF quantum transport program were discussed in this thesis. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T00:25:09Z (GMT). No. of bitstreams: 1 ntu-109-R06941027-1.pdf: 3612016 bytes, checksum: 7843a7493d2b923b7f3e6c141db76184 (MD5) Previous issue date: 2020 | en |
| dc.description.tableofcontents | Verification letter . . . . . . . . . . . . . . . . . . i
Acknowledgement . . . . . . . . . . . . . . . . . . . . ii Chinese Abstract . . . . . . . . . . . . . . . . . . . iii English Abstract . . . . . . . . . . . . . . . . . . . iv Contents . . . . . . . . . . . . . . . . . . . . . . . vi List of Figures . . . . . . . . . . . . . . . . . . . . ix List of Tables . . . . . . . . . . . . . . . . . . . . xvi 1 Introduction . . . . . . . . . . . . . . . . . . . . 1 1.1 Prologue . . . . . . . . . . . . . . . . . . . . . 1 1.2 Boltzmann Transport Equation . . . . . . . . . . . 5 1.3 Monte-Carlo Method . . . . . . . . . . . . . . . . 6 1.4 Quantum Mechanism Simulation Method . . . . . . . . 7 1.4.1 Tight-Binding Band Structure Model . . . . . . . 8 1.4.2 k·p Perturbation Theory . . . . . . . . . . . . . 9 1.4.3 Effective Mass Approximation . . . . . . . . . . 10 1.4.4 Non-equilibrium Greens Function Formalism . . . . 11 2 Methodology . . . . . . . . . . . . . . . . . . . . . 13 2.1 Overview . . . . . . . . . . . . . . . . . . . . . 13 2.2 Finite Difference Method . . . . . . . . . . . . . 16 2.3 Schrodinger equation . . . . . . . . . . . . . . . 18 2.4 Non-Equilibrium Greens Function Formalism . . . . . 21 2.4.1 Open Boundary Condition . . . . . . . . . . . . . 22 2.4.2 Probability Current . . . . . . . . . . . . . . . 24 2.4.3 Self-Energy Function . . . . . . . . . . . . . . 26 2.5 Scattering Mechanisms . . . . . . . . . . . . . . . 29 2.5.1 Acoustic Phonon Scattering . . . . . . . . . . . 31 2.5.2 Deformation Potential Scattering . . . . . . . . 33 2.5.3 Remote Phonon Scattering . . . . . . . . . . . . 35 2.5.4 Ionized Impurity Scattering . . . . . . . . . . . 37 2.6 Poisson-NEGF Self-Consistent Iteration Program . . 38 3 Module of Poisson-NEGF Based Quantum Simulator for Two Dimensional Material . . . . . . . . . . . . . . . . . 41 3.1 Simulation Model . . . . . . . . . . . . . . . . . 41 3.2 Solving Two-Dimensional Non-Linear Poisson and Drift-Diffusion Equations . . . . . . . . . . . . . . . . . . 43 3.2.1 Two-Dimensional Density of State . . . . . . . . 43 3.2.2 Field Dependent Mobility Model . . . . . . . . . 44 3.3 Constructing the Quasi-Subband Profile . . . . . . 45 3.4 One-Dimensional Band Diagram along the Transport Direction . . . . . . . . . . . . . . . . . . . . . . . 47 4 Monolayer MoS2-Based Metal-Oxide-Semiconductor Field-Effect Transistors . . . . . . . . . . . . . . . . . . 50 4.1 Quantum Transport Simulation with Various Scattering Mechanisms . . . . . . . . . . . . . . . . . . . . . . 50 4.1.1 Impact of Different Scattering Mechanisms . . . . 51 4.1.2 Carrier Density Distribution . . . . . . . . . . 54 4.1.3 Current Density Distribution . . . . . . . . . . 56 4.2 Self-Consistent Result Solved from Poisson and NEGF Equation . . . . . . . . . . . . . . . . . . . . . . . 59 4.2.1 Parallel Computing . . . . . . . . . . . . . . . 59 4.2.2 Difference of Potential Energy . . . . . . . . . 61 4.2.3 Output and Transfer Characteristics . . . . . . . 62 4.3 Electronic Characteristics of Monolayer MoS2-Based Transistor with Different Channel Length . . . . . . . 67 5 Conclusion and Future Work . . . . . . . . . . . . . 72 | |
| dc.language.iso | en | |
| dc.subject | 單層二硫化鉬電晶體 | zh_TW |
| dc.subject | 非平衡格林函數 | zh_TW |
| dc.subject | 泊松方程式 | zh_TW |
| dc.subject | 自洽求解 | zh_TW |
| dc.subject | 電子-聲子散射 | zh_TW |
| dc.subject | 摻雜離子散射 | zh_TW |
| dc.subject | 遠程聲子散射 | zh_TW |
| dc.subject | 二維材料 | zh_TW |
| dc.subject | NEGF Formalism | en |
| dc.subject | Remote Phonon Scattering | en |
| dc.subject | Ionized Impurity Scattering | en |
| dc.subject | Electron-Phonon Scattering | en |
| dc.subject | Self-Consistent | en |
| dc.subject | Poisson Equation | en |
| dc.subject | Monolayer MoS2-Based Field-Effect Transistor | en |
| dc.subject | 2D material | en |
| dc.title | 發展針對二維材料電晶體的自洽求解非平衡態格林函數耦合泊松方程式之量子傳輸數值模擬軟體 | zh_TW |
| dc.title | Development of Self-Consistent Poisson-NEGF Quantum Transport Simulator for 2D Material-Based Transistor | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 108-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃建璋(Jian-Jang Huang),張子璿(Tzu-Hsuan, Chang),陳建宏(Edward Chen) | |
| dc.subject.keyword | 非平衡格林函數,泊松方程式,自洽求解,電子-聲子散射,摻雜離子散射,遠程聲子散射,二維材料,單層二硫化鉬電晶體, | zh_TW |
| dc.subject.keyword | NEGF Formalism,Poisson Equation,Self-Consistent,Electron-Phonon Scattering,Ionized Impurity Scattering,Remote Phonon Scattering,2D material,Monolayer MoS2-Based Field-Effect Transistor, | en |
| dc.relation.page | 81 | |
| dc.identifier.doi | 10.6342/NTU202000415 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2020-02-11 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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