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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 張顏暉(Yuan-Huei Chang) | |
dc.contributor.author | Jen-Kai Wu | en |
dc.contributor.author | 吳仁凱 | zh_TW |
dc.date.accessioned | 2021-06-17T00:18:34Z | - |
dc.date.available | 2012-06-29 | |
dc.date.copyright | 2012-06-29 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-06-28 | |
dc.identifier.citation | [1] H. Huang, G. Fang, X. Mo, L. Yuan, H. Zhou, M. Wang, H. Xiao, and X. Zhao, Appl. Phys. Lett. 94, 063512 (2009).
[2] U. Ozgur, S. Dogan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoc., Appl. Phys. Lett. 86, 241108 (2005). [3] K. Wang, J. J. Chen, Z. M. Zeng, J. Tarr, W. L. Zhou, Y. Zhang, Y. F. Yan, C. S. Jiang, J. Pern, and A. Mascarenhas, Appl. Phys. Lett. 96, 123105 (2010). [4] H. Y. Chao, J. H. Cheng, J. Y. Lu, Y. H. Chang, C. L. Cheng, and Y. F. Chen, Superlattices and Microstructures, 47, 160 (2010). [5] K. Wang, J. Chen, W. Zhou, Y. Zhang, Y. Yan, J. Pern, and A. Mascarenhas, Adv. Mater. 20, 3248 (2008). [6] C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo and D. Wang., Nano Lett. 7, 1003 (2010). [7] S. B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K. H. Wen, S. C. Hung, S. J. Young and B. R. Huang, Sensors and Actuators A 171, 207 (2011). [8] S. Jung, S. Jeon and K. Yong, Nanotechnology 22, 015606 (2010). [9] H. T. Hsueh, S. J. Chang, W. Y. Weng, C. L. Hsu, T. J. Hsueh, F. Y. Hung, S. L. Wu, and B. T. Dai, IEEE Transactions on Nanotechnology 11, 127 (2012). [10] P. Wang, X. Zhao and B. Li, Opt. Express 19, 11271 (2011). [11] K. Liao, P. Shimpi and P. X. Gao., J. Mater. Chem. 21, 9564 (2011). [12] J. X. Wang, X. W. Sun, Y. Yang, K. K. A. Kyaw, X. Y. Huang, J. Z. Yin, J. Wei and H. V. Demir, Nanotechnology 22, 325704 (2011). [13] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, J. Phys. Chem. C 112, 20546 (2008). [14] L. Vayssieres, Adv. Mater. 15, 464 (2003). [15] Y. H. Leung, Z. B. He, L. B. Luo, C. H. A. Tsang, N. B. Wong, W. J. Zhang, and S. T. Lee, Appl. Phys. Lett. 96, 053102 (2010). [16] Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, Nano Lett. 9, 1839 (2009). [17] T. Zhai, X. Fang, M. Liao, X. Xu, H. Zeng, B. Yoshio and D. Golberg, Sensors 9, 6504 (2009). [18] Y. W. Lin, Growth and Characterization of ZnO/ZnTe Core/Shell Nanowire Arrays on Transparent Conducting Oxide Glass Substrates, Master thesis, National Taiwan University (2012). [19] M. Jain, Ⅱ-Ⅵ SEMICONDUCTOR COMPOUNDS, World Scientific, (1993). [20] R. Bhargava, Properties of Wide band-gap Ⅱ-Ⅵ Semiconductors, INSPEC, (1997). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/66001 | - |
dc.description.abstract | 同軸半導體異質接面近年來引起大家廣泛的研究。由於此結構具有較高的面積-體積比、良好的光捕捉能力以及分離電子和電洞的能力。這些優點使他們成為製作光電元件結構的最佳選擇。
在此,我們報告用改良的方法製作氧化鋅/氧化銅同軸異質接面奈米線陣列。首先,氧化鋅奈米線是利用水熱法成長在鍍有氧化銦錫的玻璃基板上,接著在氧化鋅奈米線陣列上塗上一層光阻,再利用丙酮將氧化鋅奈米線頂部的光阻去除但底部的光阻仍然蓋住氧化鋅緩衝層。最後利用電化學沉積法鍍上銅在氧化鋅奈米線上,最後將樣品送入高溫爐加熱並通入氧氣形成氧化銅。 SEM, XRD顯示了氧化鋅/氧化銅同軸異質接面奈米線陣列具有良好的晶體結構。穿透光譜、電壓-電流量測以及光反應皆顯示了氧化鋅/氧化銅同軸異質結構奈米線陣列具有良好的電學和光學性質。此結構在+3 V至-3 V的整流率為110,在-3 V的漏電流為-12.6 uA。 這些結果顯示加入光阻絕緣層的氧化鋅/氧化銅同軸異質接面奈米線陣列具有好的晶格結構以及良好的光電性質,所以氧化鋅/氧化銅同軸異質結構奈米線陣列可以當一個良好的紫外光光偵測器。 | zh_TW |
dc.description.abstract | Type-II semiconductor coaxial heterojunction has attracted much attention recently. The high surface-to-volume ratio, good light trapping ability and spatially separated charge carriers in these nanostructures made them a potential candidate for high efficient optoelectronic devices. In this thesis, we showed that an enhanced photo-response near the violet range can be obtained for the ZnO/CuO coaxial heterojunction structure grown by hydro-thermal method. The results from SEM, XRD, TEM, and transmission spectroscopy used to study the structural and optical characteristics of ZnO/CuO coaxial heterojunction indicated a good crystalline quality Spin-coating of a layer of photoresist before electrochemically depositing the CuO layer on top of the ZnO nanowires proved to be important in improving the photo response of the ZnO/CuO heterojunction as the photoresist acts as an insulating layer and can reduce the leakage current in these structures quite substantially. The optical measurement showed that ZnO/CuO coaxial structure prepared with our method has good rectifying ratio, small reverse leakage current and has good photo responsivity in the ultra-violet range of the light spectrum. The results demonstrated that cost-effective and simple fabrication of the good ZnO/CuO coaxial heterojunction photo detector can be prepared by using a cost-effective way with a simple fabrication scheme. | en |
dc.description.provenance | Made available in DSpace on 2021-06-17T00:18:34Z (GMT). No. of bitstreams: 1 ntu-101-R99222062-1.pdf: 2834880 bytes, checksum: 1372053bff0c3e8c25d3de0bef882ece (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | Contents
Chapter 1 Introduction 1.1 The properties of zinc oxide .……………………………………………...............1 1.2 The properties of copper oxide……………………………………………………. 1 1.3 The heterojunction and ZnO/CuO band alignment………………………………2 1.4 Photo-detector…………………………………………………………………3 1.5 The advantage of coaxial heterojunction in photodetection……………………….4 1.6 The motivation ……………………………………………………………….4 Chapter 2 Theory 2.1 The ohmic contact and Schottky barrier………………...…………………………5 2.2 Heterojunction……………….. …………………………………………………...7 2.3 Electron-hole recombination………………………………………………………8 Chapter 3 The principles of experimental apparatus 3.1 Scanning Electron Microscopy (SEM) …………………………………………10 3.2 Photoluminescence (PL) .......................................................................................12 3.3 X-ray diffraction (XRD) ........................................................................................13 3.4 Transmission electron microscopy (TEM) ……………………………………...14 3.5 UV/VIS/NIR spectrophotometer ...........................................................................15 3.6 I-V Measurement system .......................................................................................15 (a) The dark current and photocurrent………………………………………….15 (b) Responsivity………………………………………………………………..15 Chapter 4 Experimental Set-up 4.1 The procedures of growing ZnO nanowires on the ITO substrate …………17 (a) Method of cleaning a substrate…………….…………………………………17 (b) Growing ZnO nanowires by the hydro-thermal method……………………..17 (c) Baking for dryness………………………………………………………….18 4.2 Photoresist coated on ZnO nanowires as an insulating layer………….………....19 4.3 Coating CuO on ZnO nanowires by electrochemical deposition……………...…21 Chapter 5 Results and discussion 5.1 Growth of ZnO nanowire arrays by hydro-thermal method ………………...…...22 5.1.1 The structural properties of ZnO nanowires array ……………..………….22 5.1.2 The optical properties of ZnO nanowires array ……………………..……..26 5.2 Coating photoresist on ZnO nanowires array as an insulating layer …………….28 5.3 The growth of a CuO layer on ZnO nanowires by ECD.................................30 5.3.1 The structure of ZnO/CuO coaxial heterojunction…………………………30 5.3.2 The electrical and optical properties of ZnO/CuO coaxial heterojunction...39 Chapter 6 Conclusions………………………………………………………….46 References...……………………………………………………………………….47 List of Figures Figure 1.1 Three type of heterojunction ........................................................................2 Figure 1.2 Energy-band diagrams of (a) ZnO and CuO (b) ZnO/CuO heterojunction in thermal equilibrium……………………………………………………......3 Figure 2.1 Schematic band diagrams for metal/n-type semiconductor interface……...6 Figure 2.2 Energy band diagrams of (a) n-type and p-type materials (b) a general heterojunction in thermal equilibrium…………..…………………………7 Figure 2.3 Schematic diagram of electron-hole recombination……………..………...9 Figure 3.1 Schematic diagram of SEM ………………..………………...…..............11 Figure 3.2 Schematic diagram of photoluminescence…………...…………………...12 Figure 3.3 Schematic diagram of XRD……………...……………………………….13 Figure 3.4 Schematic diagram of TEM…………………..…………………………..14 Figure 3.5 Schematic diagram of UV/VIS/NIR spectrophotometer…………..……..15 Figure 3.6 Schematic diagram of (a) I-V and (b) responsivity measurement system……………………………………………………….……………16 Figure 4.1 The main experimental procedure …………………………………...…..18 Figure 4.2 Schematic diagram of the sample structure (a) without photoresist (b) with photoresist………………………………………………………………20 Figure 4.3 The Xenon light of spectrogram………………………………...…..........21 Figure 5.1 Growth of ZnO nanowires array under (a) 0.04 M (b) 0.05 M (c) 0.06 M (d) 0.07 M…………………………..……………………………………...23 Figure 5.2 The SEM image of (a) low; (b) high magnification of ZnO nanowires array and (c) the cross section of ZnO nanowires array………………..24 Figure 5.3 (a) Low-magnification TEM image of the ZnO nanowire. (b) High-resolution of TEM image of the ZnO nanowire…….……....……...25 Figure 5.4 XRD image of ZnO nanowires array………………….………………….26 Figure 5.5 Photoluminescence of the ZnO nanowires array…………………………27 Figure 5.6 Transmission spectrum of the ZnO nanowires array…...………………...27 Figure 5.7 SEM images of (a) before and after acetone etching applied (b) once and (c) twice on the photoresist layer, respectively..………………......................29 Figure 5.8 Growth of CuO layer at room temperature under (a) 0.01 M; (b) 0.05 M; (c) 0.10 M ……………………...…………..………………………….....….33 Figure 5.9 Growth of CuO layer at room temperature with 0.05 M CuSO4 solution under (a) 0.5 V; (b) 1.0 V; (c) 1.5V………………………………………34 Figure 5.10 Growth of CuO layer at room temperature in the CuSO4 solution of 0.01 M under a bias of 1 V for (a) 5 minutes (b) 10 minutes (c) 15 minutes………………………….………………………………….35 Figure 5.11 Growth of CuO layer at room temperature in the CuSO4 solution of 0.05 M under a bias of 1 V for (a) 5 minutes (b) 10 minutes (c) 15 minutes………………………………………………...…………………36 Figure 5.12 (a) Low-magnification TEM image of a ZnO/CuO CH. (b) High-magnification TEM image and (c) fast Fourier transform (FFT) pattern of ZnO/CuO interface taken from the square region drawn in the interface of ZnO/CuO as shown in figure 5.12 (a).…..............................37 Figure 5.13 XRD patterns of ZnO/CuO for (a) 0.01 M 1 V 5, 10 and 15 minutes (b) 0.05 M 1 V 5, 10 and 15 minutes. (c) XRD patterns of ZnO (black line) and ZnO/CuO (red line) for the parameter which is the CuSO4 solution of 0.01 M under a bias of 1 V for 15 minutes……………………...….......38 Figure 5.14 Semi-logarithmic plots of the transmission spectra of (a) ITO, ZnO and CuO. (b) Absorption spectra of ITO, ZnO and CuO. (c) Transmission spectra of ZnO/CuO heterojunction grew in the solution CuSO4 of 0.01 M with a bias of 1 V for 15 minutes……………………………………42 Figure 5.15 (a) Xenon lamp spectrum. (b) Responsivity of ZnO/CuO CH. (c) Responsivity of ZnO/CuO CH from 400 nm to 1000 nm………………43 Figure 5.16 Current-voltage (I-V) characteristic of (a) ZnO/CuO heterojunction without photoresist (PR) (black line) and ZnO/CuO coaxial heterojunction (CH) with PR (red line) as an insulating layer. The inset shows a schematic diagram of the sample structure with PR as insulating layer. (b) Ohmic contact of Ag-CuO layer (black line) and ITO-ZnO NWs (blue line). (c) ZnO/CuO heterojunction in the dark (black line) and under light illumination (red line)………………………………………44 Figure 5.17 Photo-response of ZnO/CuO coaxial heterojunction……………………45 | |
dc.language.iso | en | |
dc.title | 氧化鋅奈米線/氧化銅同軸異質接面之製程及其光學性質之研究 | zh_TW |
dc.title | A study on the fabrication of ZnO nanowire/CuO coaxial heterojunction and its optical properties | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 梁啟德(Chi-Te Liang) | |
dc.contributor.oralexamcommittee | 陳永芳(Yang-Fang Chen),石明豐(Ming-Feng Shih) | |
dc.subject.keyword | 氧化鋅,氧化銅,同軸異質接面,水熱法,電鍍沉積法,光偵測器, | zh_TW |
dc.subject.keyword | ZnO,CuO,coaxial heterojunction,hydro-thermal method,electrochemical deposition,photo-detector, | en |
dc.relation.page | 48 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-06-28 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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