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| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 張顏暉(Yuan-Huei Chang) | |
| dc.contributor.author | Hung-Sen Kang | en |
| dc.contributor.author | 康閎森 | zh_TW |
| dc.date.accessioned | 2021-06-17T00:15:20Z | - |
| dc.date.available | 2012-07-18 | |
| dc.date.copyright | 2012-07-18 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-07-04 | |
| dc.identifier.citation | 參考文獻
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[32] Yil-Hwan You, Byung-Soo So, Jin-Ha Hwang, Wontae Cho, Sun Sook Lee, Taek-Mo Chung, Chang Gyoun Kim, and Ki-Seok An, “Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition”, Applied Physics Letters, 89, 222105, (2006). [33] K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, and H. Tanaka, “Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide”, Applied Physics Letters, 89, 103509, (2006). [34] Jae-Wan Park, Jong-Wan Park, Dal-Young Kim, and Jeon-Kook Lee, “Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications”, J. Vac. Sci. Technol. A, Vol. 23, No. 5, pp. 1309-1313, (2005). [35] S Seo, M J Lee, D H Seo, S K Choi, D -S Suh, Y S Joung, I K Yoo, I S Byum, I R Hwang, S H Kim, and B H Park, “Conductivity switching characteristics and reset currents in NiO films”, Applied Physics Letters, 86, 093509, (2005). [36] D C Kim, M J Lee, S E Ahn, S Seo, J C Park, I K Yoo, I G Baek, H J Kim, E K Yim, J E Lee, S O Park, H S Kim, U-In Chung, J T Moon, and B I Ryu, “Improvement of resistive memory switching in NiO using IrO2”, Applied Physics Letters, 88, 232106, (2006). [37] Dong-Wook Kim, Bae Ho Park, Ranju Jung, and Sunae Seo, “Reversible Resistance Switching Behaviors of Pt/NiO/Pt Structures”, Japanese Journal of Applied Physics, Vol. 46, No. 8A, pp. 5205-5207, (2007). 83 [38] M D Leea, C K Lo, T Y Peng, S Y Chen, Y D Yao, “Endurance study of switching characteristics in NiO films”, Journal of Magnetism and Magnetic Materials, Vol. 310, pp. e1030-e1031, (2007). 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[49] L V Azároff,; R Kaplow, N Kato, R J Weiss, A J C Wilson, R A Young. X-ray diffraction. McGraw-Hill. 1974. [50] V Holy, et al. “X-ray reflection from rough layered systems”, Phys. Rev. B. 47, 15896 (1993). [51] S E Dann, Reactions and Characterization of SOLIDS. Royal Society of Chemistry, USA (2002). [52] D A Skoog,; F J Holler,; S R Crouch, Principles of Instrumental Analysis. Sixth Edition, Thomson Brooks/Cole, USA (2007). [53] Hyoun Woo Kima, Han Gil Nab, Ju Chan YangbChanghyun Jin, Hyunsu Kim, and Chongmu Lee, “Enhancement of the emission from TeO2 nanorods by encapsulation with ZnO” Cryst. Res. Technol. 46, No. 10, 1065 – 1070 (2011) / DOI 10.1002/crat.201100224 [54] “Simply heating to remove the sacrificial core TeO2 nanowires and to generate tubular nanostructures of metal oxides” Chemical Engineering Journal Volume 170, Issue 1, 15 May 2011, Pages 326–332 [55] Sodium tellurite neutron diffraction experiment 24 - 26th February 2005 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65918 | - |
| dc.description.abstract | 我們嘗試使用二氧化碲做為電阻式記憶體材料，先利用高溫爐在p型矽基板上生長二氧化碲的奈米結構；並利用掃描式電子顯微鏡作奈米結構上的分析，以及利用X光繞射和光致發光作結構和成分上的分析。
製作兩種不同材料的電阻式記憶體設備，銀和鋁，分別做為反映傳導層，最後利用蒸鍍機鍍銀鋁作為電極當作反應層，完成了以p型矽基板和反應傳導層夾住二氧化碲奈米結構的電阻式記憶體設備。 實驗結果顯示，鋁作為金屬氧化反應層的樣本跟用銀作為反應層的樣本比較下有較好的電壓電流特性。為了改良設備上的缺陷，我們利用熱退火和增加二氧化碲奈米結構的生長時間，有效改善了矽-二氧化碲-鋁的電阻式記憶體設備，並且使其具有比先前更好的特性。 目前學術上有關二氧化碲作為電阻式記憶體材料的研究相關論文非常少，電阻式記憶體也算是一個較新的固態設備，只有少數的相關實驗數據參考。研究結果顯示，穩定性和持久性都是電阻式記憶體未來發展的基本挑戰。 | zh_TW |
| dc.description.abstract | In this thesis, a resistive random-access memory was fabricated by using the tellurium dioxide. The nanostructure of the tellurium dioxide was grown on the p-type silicon substrate in a high-temperature furnace. Scanning electron microscopy, Photoluminescence and X-ray diffraction analysis were carried out to investigate the morphology and the crystalline structure of the grown tellurium dioxide, respectively.
Two types of resistive random-access memory devices were fabricated by employing different materials, silver and aluminum, as the conducting layer. In this study, aluminum was coated as the electrodes by the thermal evaporation method. The resistive random-access memory device was constructed by sandwiching the tellurium layer between the p-type silicon substrate and the conducting layer. The measured current-voltage characteristics of the device with the aluminum conducting layer performed better than that with the silver one. To improve the device performance, annealing and extending the growth time of TeO2 nanostructure were attempted in this study, and the results show a positive outcome. Resistive random-access memory is a relatively new subject for solid state devices. Only a handful of experimental data are available to date. The results presented in this thesis indicate that the stability and persistence of the resistive random-access memory devices will be the fundamental challenges for its future development. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-17T00:15:20Z (GMT). No. of bitstreams: 1 ntu-101-R99245001-1.pdf: 3906074 bytes, checksum: f942e2a4a527ae1e21fc8bcd7a823992 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 目 錄
口試委員審定書 Ⅰ 誌謝 Ⅱ 英文摘要 Ⅲ 中文摘要 Ⅳ 目錄 Ⅴ 圖目錄 Ⅷ 表目錄 ⅩⅠ 第一章 緒論 .................................................................................................................. 1 1.1 前言........................................................................................................................ 1 1.2 研究概要目的與動機............................................................................................ 2 第二章 基本原理介紹 .................................................................................................. 5 2.1 材料介紹................................................................................................................. 5 2.1.1 二氧化碲奈米結構........................................................................................ 5 2.2 各種次世代非揮發性記憶體原理介紹和比較..................................................... 7 2.2.1 鐵電隨機記憶體(FeRAM) ............................................................................ 7 2.2.2 磁阻隨機記憶體(MRAM) ............................................................................ 8 2.2.3 相變化隨機記憶體(PRAM).......................................................................... 9 2.2.4 電阻式記憶體(RRAM) ............................................................................... 10 2.3 電阻式記憶體(RRAM)相關研究 ........................................................................ 13 2.3.1 鋯酸鍶(SrZrO3) ............................................................................................ 13 2.3.2 鐠鈣錳氧(Pr0.7Ca0.3MnO3, PCMO) ............................................................. 19 Ⅴ 2.3.3 二氧化鈦(TiO2) ................................................................................................. 20 2.3.4 氧化鎳(NiO) ................................................................................................ 22 2.4 實驗儀器原理....................................................................................................... 27 2.4.1 高溫爐原理介紹.......................................................................................... 27 2.4.2 掃描式電子顯微鏡(SEM)原理介紹 ........................................................... 29 2.4.3 X 光衍射儀(XRD)原理介紹........................................................................ 33 2.4.4 光致發光(PL)測量原理介紹 ...................................................................... 38 2.4.5 蒸鍍機原理介紹.......................................................................................... 40 2.4.6 探針式電流電壓測量系統原理介紹.......................................................... 42 第三章 實驗流程 ........................................................................................................ 43 3.1 二氧化碲奈米結構的製作流程........................................................................... 44 3.1.1 矽基板的蝕刻與清洗.................................................................................. 44 3.1.2 二氧化碲奈米結構的生長.......................................................................... 44 3.2 RRAM 記憶體的製作流程 ................................................................................... 46 3.2.1 反應層(Ag,Al)的蒸鍍 ................................................................................. 46 3.2.2 電極的製作.................................................................................................. 46 第四章 實驗結果與討論 ............................................................................................ 47 4.1 二氧化碲奈米的結構........................................................................................... 47 4.1.1 結構測量以及成分分析.............................................................................. 47 4.2 RRAM 電阻式記憶體設備測量結果 ................................................................... 53 4.2.1 Si/TeO2/Ag RRAM 之特性 .......................................................................... 53 4.2.2 Si/TeO2/Ag 之穩定性 ................................................................................... 55 4.2.3 Si/TeO2/Al RRAM 之特性 ........................................................................... 59 Ⅵ 4.2.4 Si/TeO2/Al RRAM 之穩定性 ....................................................................... 61 4.3 Si/TeO2/Ag 與Si/TeO2/Al 之RRAM 性質的比較與分析 .................................. 65 4.4 Si/TeO2/Al 電阻式記憶體的改良 ......................................................................... 68 第五章 結論................................................................................................................ 77 參考文獻...................................................................................................................... 79 Ⅶ | |
| dc.language.iso | zh-TW | |
| dc.title | 二氧化碲電阻式記憶體之研究 | zh_TW |
| dc.title | A Study on TeO2 Nanostructure RRAM Device | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.coadvisor | 梁啟德(Chi-Te Liang) | |
| dc.contributor.oralexamcommittee | 陳永芳(Yang-Fang Chen),石明豐(Ming-Feng Shih) | |
| dc.subject.keyword | 非揮發性記憶體,電阻式記憶體,二氧化碲, | zh_TW |
| dc.subject.keyword | non-volatile memory,resistive random-access memory,tellurium dioxide, | en |
| dc.relation.page | 84 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-07-04 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 應用物理所 | zh_TW |
| dc.date.embargo-lift | 2300-01-01 | - |
| Appears in Collections: | 應用物理研究所 | |
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