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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳永芳(Yang-Fang Chen) | |
| dc.contributor.author | Kai-Ju Huang | en |
| dc.contributor.author | 黃凱儒 | zh_TW |
| dc.date.accessioned | 2021-06-16T23:44:51Z | - |
| dc.date.available | 2017-07-27 | |
| dc.date.copyright | 2012-07-27 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-07-24 | |
| dc.identifier.citation | Chapter1
References 1. S. X. Dong, J. Y. Zhai, J. F. Li, and D. Viehland, Appl. Phys. Lett. 89, 252904 (2006). 2. S. X. Dong, J. F. Li, and D. Viehland, J. Appl. Phys. 100, 124108 (2006) . 3. J. Y. Zhai, J. F. Li, S. X. Dong, D. Viehland, and M. I. Bichurin, J. Appl. Phys. 100, 124509 (2006). 4. J. van Suchtelen, Philips Res. Rep. 27, 28 (1972). 5. M. Fiebig, J. Phys. D: Appl. Phys. 38, R123-R152 (2005). 6. Clark A E, DeSavage B F and Bozorth R Phys. Rev. 138, A216–24 (1965) 7. Abbundi R and Clark A E, IEEETrans. Magn. 13, 4510–5 (1977) 8. Clark A E, Hathaway K B, Wun-Fogle M, Restorff J B, Lograsso T A, Keppens V M, Petculescu G and Taylor R, J. Appl. Phys. 93, 8621 (2003) 9. Jayasimha Atulasimha, and Alison B Flatau, Smart Mater. Struct. 20, 0430014J. (2011) Chapter 2 References 1. Fiebig, M., Revival of magnetoelectric effect, J. Phys. D: Appl. Phys. 38, R123-R152 (2005). 2. Yao Wang, Jiamian Hu, Yuanhua Lin, and Ce-Wen, NPG Asia Materials 2, 61-68 (2010) 3. H. Schmid, Ferroelectrics 162, 317 (1994 ) . 4. M. Fiebig, J. Phys. D 38, R123 (2005) . 5. W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) 442, 759 (2006). 6. K. F. Wang, J.-M. Liu, Z. F. Ren, Adv. in Phys. 58, 321 (2009). 7. M. Fiebig, J. Phys. D 38, R123 (2005). 8. C. W. Nan, M. I. Bichurin, S. X. Dong, D. Viehland, G. Srinivasan, J. Appl. Phys. 103, 031101 (2008). 9. J. van Suchtelen, Phil. Res. Rep. 27, 28 (1972). 10. C. W. Nan, Prog. Mater. Sci. 37, 1 (1993). 11. Y. J. Li, X. M. Chen, Y. Q. Lin, and Y. H. Tang, J. Eur. Ceram. Soc. 26, 2839 (2006). 12. R. S. Devan, S. B. Deshpande, and B. K. Chougule, J. Phys. D 40, 1864 (2007). 13. S. X. Dong, J. Y. Zhai, J. F. Li, and D. Viehland, Appl. Phys. Lett. 89, 252904 (2006). 14. S. X. Dong, J. F. Li, and D. Viehland, J. Appl. Phys. 100, 124108 (2006) . 15. J. Y. Zhai, J. F. Li, S. X. Dong, D. Viehland, and M. I. Bichurin, J. Appl. Phys. 100, 124509 (2006). 16. P. Li, Y. M. Wen, and L. X. Bian, Appl. Phys. Lett. 90, 022503 (2007). 17. X. M. Yin, N. Zhang, J. C. Bao, Phys. Lett. A 361, 434 (2007) . 18. Z. Shi, C. W. Nan, J. Zhang, N. Cai, and J. F. Li, Appl. Phys. Lett. 87, 012503 (2005). 19. Z. Shi, J. Ma, Y. H. Lin, and C. W. Nan, J. Appl. Phys. 101, 043902 (2007). 20. M. P. Singh, W. Prellier, L. Mechin, C. Simon, and B. Raveau, J. Appl. Phys. 99, 024105 ( 2006). 21. R. Ramesh and N. A. Spaldin, Nat. Mater. 6, 21 (2007). 22. Mang A, Reimann K and R‥ubenacke St 1995 Solid StateCommun. 94, 251 (1995) 23. Reynolds D C, Look D C and Jogai B,Solid StateCommun. 99, 873 (1996) 24. Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Yand Goto T Appl. Phys. Lett. 70, 2230 (1997) 25. C.Y. Yeh, Z.W. Lu, S. Froyen, and A. Zunger Phys. Rev. B 46, 10086 (1992). Chapter 3 References 1. 1st Electric Arc Furnace : http://www.crucibleservice.com/history.aspx?c=20 3. Atomic deposition layer: http://ald.colorado.edu/J_Phys_Chem_100.pdf 3.G.I. Goldstein,D.e.Newbury, P.Echlin,D.d.Joy,cC.fiori, and E.Lifshin, Scanning electron microscopy and X-ray microanalysis, Plenum Press, New York andlondon.(1981) 4.http://searchcio-midmarket.techtarget.com/definition/superconducting-quantum-interference-device Chapter 4 References 1. H. Schmid, Ferroelectrics 162, 317 (1994 ) . 2. M. Fiebig, J. Phys. D 38, R123 (2005) . 3. W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) 442, 759 (2006). 4. K. F. Wang, J.-M. Liu, Z. F. Ren, Adv. in Phys. 58, 321 (2009). 5. M. Fiebig, J. Phys. D 38, R123 (2005). 6. C. W. Nan, M. I. Bichurin, S. X. Dong, D. Viehland, G. Srinivasan, J. Appl. Phys. 103, 031101 (2008). 7. N. A. Hill, J. Phys. Chem. B 104, 6694 (2000) 8. T. Kimura, T. Goto, H. Shintani, K. Ishizaka, T. Arima, and Y. Tokura, Nature London 426, 55 (2003) 9. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003 ). 10. Y. C. Chen, C. L. Cheng, S. C. Liou, and Y. F. Chen, Nanotechnology 19, 485709 (2008). 11. Reynolds D C, Look D C and Jogai B Solid StateCommun. 99, 873 (1996) 12. Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Yand Goto T, Appl. Phys. Lett. 70, 2230. (1997) 13. Mang A, Reimann K and R‥ubenacke St 1995 Solid StateCommun. 94, 251 (1995). 14.S.Trolier-McKinstry, and P. Muralt, “Thin film” piezoelectrics for MEMS,” J. Electroceramics, 12, 7-17 (2004). 15.Jayasimha Atulasimha, and Alison B Flatau Smart Mater. Struct. 20, 0430014J (2011) 16. A. E. Clark, K. B. Hathaway, M. Wun-Fogle, J. B. Restorff, T. A. Lograsso, V. M. Keppens, G. Petculescu, and R. A. Taylor, “Extraordinary magnetoelasticity and lattice softening in bcc Fe-Ga alloys,” J. Appl. Phys., 93, 8621–8623, (2003). 17. Y. F. Li, B. Yao, Y. M. Lu, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, B. H. Li, D. Z. Shen, X. W. Fan,and Z. K. Tang, J. Appl. Phys 104, 083516 (2008). 18. Introduction to magnetic materials, edited by B.D. CULLITY, C.D. GRAHAM. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65467 | - |
| dc.description.abstract | 多鐵磁電複合物的研究雖然只有幾十年。但隨者科技進步,陶瓷壓電與磁性氧化物所組成的磁電複合物已經被廣泛應用。然而，壓電半導體與磁性材料的組合卻鮮少有人研究。在此實驗中，我們主要研究壓電半導體與鐵磁性材料複合物的磁電效應，而此複合物是由氧化鋅與鐵鎵合金所組成。當磁場外加在壓電與鐵磁性材料所組成的複合物上時，其鐵磁性層會有磁致伸縮的現象，使得鐵磁性層產生形變，此伸縮的形變量會傳遞至壓電層，壓電層的形變會使壓電材料產生極化，並同時改變其內部晶格結構及能帶結構，進而改變其光學性質。此研究提供了未來半導體在可調式磁光或磁電原件上一些潛在性應用 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-16T23:44:51Z (GMT). No. of bitstreams: 1 ntu-101-R99222069-1.pdf: 1660766 bytes, checksum: e458cf4106153c09de7bc46f0cfbcadb (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 口試委員審定書 I
致謝 II 摘要 III Abstract IV Contents V List of figures VII Chapter 1 Introduction 1 Reference 5 Chapter 2 Theoretical Background 6 2.1Magnetoelectric effect 6 2.2 Magnetostriction 8 2.3 Multiferroic materials 11 2.4 The properties of ZnO 13 2.4.1 Luminescent property of ZnO 13 2.4.2 The crystal structure of ZnO 13 2.4.3 Piezoelectric effect in ZnO 18 2.5 Poisson effect 19 References 21 Chapter 3 Experimental apparatus 23 3.1 Arc melting furnace 23 3.2 Atomic layer deposition (ALD) 23 3.3 SEM-EDS 24 3.4 Photoluminescence (PL) 28 3.5 Superconducting Quantum Interference Device (SQUID) 31 Reference 34 Chapter 4 Optical detection of magnetoelectric effect in the composite consisting of ZnO film and Fe81Ga19 alloy 35 4.1 Introduction 35 4.2 Experiment 37 4.3 Results and discussion 39 4.4 Summary 49 Reference 50 Chapter 5 Conclusion 52 | |
| dc.language.iso | zh-TW | |
| dc.subject | 多鐵性 | zh_TW |
| dc.subject | 磁電效應 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 鐵鎵合金 | zh_TW |
| dc.subject | 磁致伸縮 | zh_TW |
| dc.subject | ZnO | en |
| dc.subject | magnetoelectric | en |
| dc.subject | multiferroic | en |
| dc.subject | magnetostriction | en |
| dc.subject | FeGa | en |
| dc.title | 藉由光學偵測氧化鋅薄膜/鐵鎵合金複合物的磁電效應 | zh_TW |
| dc.title | Optical detection of magneto electric effect in the composite consisting of ZnO film and Fe81Ga19 alloy | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林泰源(Tai-Yuan Lin),梁啟德(Chi-Te Liang) | |
| dc.subject.keyword | 多鐵性,磁電效應,氧化鋅,鐵鎵合金,磁致伸縮, | zh_TW |
| dc.subject.keyword | multiferroic,magnetoelectric,ZnO,FeGa,magnetostriction, | en |
| dc.relation.page | 52 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-07-24 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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