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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65036完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊志忠(Chih-Chung Yang) | |
| dc.contributor.author | Wei-Lun Chung | en |
| dc.contributor.author | 鍾瑋倫 | zh_TW |
| dc.date.accessioned | 2021-06-16T23:16:50Z | - |
| dc.date.available | 2014-08-01 | |
| dc.date.copyright | 2012-08-01 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-01 | |
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Lett. 69, 2701-2703 (1996). [3.3] Y. S. Lin, K. J. Ma, C. Hsu, S. W. Feng, Y. C. Cheng, C. C. Liao, C. C. Yang, C. C. Chuo, C. M. Lee, and J. I. Chyi, “Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77, 2988-2990 (2000). [3.4] Y. C. Cheng, E. C. Lin, C. M. Wu, C. C. Yang, and J. R. Yang, “Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions,” Appl. Phys. Lett. 84, 2506-2508 (2004). [3.5] S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys Lett. 83, 4906-4908 (2003). [3.6] A. Sasaki, S. Shibakawa, Y. Kawakami, K. Nishizuka, Y. Narukawa, and T. Mukai, “Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to InxGa1-xN/GaN multiple quantum wells,” Jpn. J. Appl. Phys. 45, 8719-8723 (2006). [3.7] S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, and S. P. DenBaars, T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett. 73, 2006-2008 (1998). [3.8] T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, “Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect,” Appl. Phys. Lett. 73, 1691-1693 (1998). [3.9] C. F. Huang, C. Y. Chen, C. F. Lu, and C. C. Yang, “Reduced injection current induced blueshift in an InGaN/GaN quantum well light-emitting diode of prestrained growth,” Appl. Phys. Lett. 91, 051121, (2007). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/65036 | - |
| dc.description.abstract | 在本論文中，我們利用光致發螢光技術研究氮化銦鎵/氮化鎵發光二極體及氧化鎘鋅/氧化鋅發光二極體之光學特性。首先以氮化銦鎵半導體雷射 (波長406nm) 對氮化銦鎵/氮化鎵發光二極體進行隨溫度變化的螢光頻譜和隨激發強度變化的螢光頻譜量測，研究在高溫成長不同厚度的p型氮化鎵下，量子井因為受到高溫熱退火而重整銦聚集結構並加強載子局部效應，也因為晶格常數的不匹配而增強內部電場，造成內部量子效率及史塔克效應不同的影響。此外，用氦鎘雷射 (波長325nm) 對氧化鎘鋅/氧化鋅發光二極體進行隨溫度變化的螢光頻譜和隨激發強度變化的螢光頻譜量測，研究在氮化鎵及氧化鋅基板上成長氧化鎘鋅/氧化鋅量子井，造成內部量子效率及史塔克效應的影響，並利用兩個高斯分佈擬合發光頻譜。當量子井中鎘濃度高時，發光頻譜中存在著rock-salt氧化鎘鋅結構及wurtzite氧化鎘鋅結構，並隨著量子井中鎘濃度的增加，rock-salt結構相對wurtzite結構對全頻譜的影響更甚。 | zh_TW |
| dc.description.abstract | In this study, we demonstrate the emission characteristics in InGaN/GaN QWs and in CdZnO/ZnO QWs with photoluminescence measurements. First, temperature-dependent photoluminescence and excitation power-dependent photoluminescence are performed on InGaN/GaN QWs with an InGaN-based diode laser (λ=406nm). The counteraction between the increased carrier localization effect in the QWs, which is caused by the thermal annealing process, and the enhanced quantum-confined Stark effect in the QWs, which is caused by the increased piezoelectric field, when the different thickness of p-type layer is grown at a high temperature on the InGaN/GaN QWs is illustrated. Next, we demonstrate the results of temperature-dependent photoluminescence and excitation power-dependent photoluminescence with a He-Cd laser (λ=325nm) to understand the emission behaviors of the CdZnO/ZnO QW on GaN and ZnO templates. With two-Gaussion fitting, wurtzite CdZnO structure and rock-salt CdZnO structure exist in the CdZnO well layers. The rock-salt structures may dominate over the wurtzite structures in photoluminescence intensity when the total Cd content is high. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T23:16:50Z (GMT). No. of bitstreams: 1 ntu-101-R99941079-1.pdf: 1554698 bytes, checksum: 0937ea8bca5255c5a3dc7c98c4d657ce (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 誌謝 II
摘要 III Contents V Chapter 1 Introduction 1 1.1 Applications of GaN-based and ZnO-based Devices 1 1.2 Review of the Emission Characteristics of the InGaN/GaN Quantum Wells 3 1.3 Review of the Emission Charcteristics of the CdZnO/ZnO Quantum Wells 6 1.4 Research Motivations 8 References 11 Chapter 2 Effects of Overgrown p-layer on the Emission Characteristics of the InGaN/GaN Quantum Wells in High-indium Light-emitting Diode 21 2.1 Sample Descriptions 21 2.2 Photoluminescence (PL) Setup 22 2.3 Photoluminescence (PL) Results 23 2.3.1 Measurement Results of Sample A-F 24 2.3.2 Measurement Results of Sample FA-FE 30 References 34 Chapter 3 Characteristics Comparison between the CdZnO/ZnO Quantum Wells on ZnO and GaN Templates 43 3.1 Sample Descriptions 43 3.2 Basic Characterization Results 45 3.4 Photoluminescence (PL) Results 47 References 56 Chapter 4 Conclusions 69 | |
| dc.language.iso | en | |
| dc.subject | 氮化銦鎵/氮化鎵 | zh_TW |
| dc.subject | 量子井 | zh_TW |
| dc.subject | 氧化鎘鋅/氧化鋅 | zh_TW |
| dc.subject | 光致發光 | zh_TW |
| dc.subject | CdZnO/ZnO | en |
| dc.subject | InGaN/GaN | en |
| dc.subject | Quantum-well | en |
| dc.subject | Photoluminescence | en |
| dc.subject | PL | en |
| dc.title | 以光致發螢光技術研究氮化銦鎵/氮化鎵及氧化鎘鋅/氧化鋅量子井結構之發光特性 | zh_TW |
| dc.title | Study of the Emission Characteristics of InGaN/GaN and CdZnO/ZnO Quantum-well Structures with the Photoluminescence Spectroscopy | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 彭隆瀚,黃建璋,吳育任 | |
| dc.subject.keyword | 光致發光,氮化銦鎵/氮化鎵,氧化鎘鋅/氧化鋅,量子井, | zh_TW |
| dc.subject.keyword | InGaN/GaN,CdZnO/ZnO,Quantum-well,Photoluminescence,PL, | en |
| dc.relation.page | 70 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-08-01 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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