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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳志毅(Chih-I Wu) | |
| dc.contributor.author | Chung-Yen Wang | en |
| dc.contributor.author | 王中彥 | zh_TW |
| dc.date.accessioned | 2021-06-16T22:56:58Z | - |
| dc.date.available | 2012-08-15 | |
| dc.date.copyright | 2012-08-15 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-09 | |
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Kumar, B., H. Gong, and R. Akkipeddi, High mobility undoped amorphous indium zinc oxide transparent thin films. Journal of Applied Physics, 2005. 98(7): p. 073703. 75. HONG, C., et al., Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films. Journal of the Ceramic Society of Japan, 2009. Vol. 117 No. 1365: p. 566-569. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64655 | - |
| dc.description.abstract | 本論文將介紹以溶膠凝膠方法製備N型氧化鋅透明導電膜製程，並探討摻雜物種類與摻雜濃度對氧化鋅透明導電膜之電學及光學特性的影響。
研究的目的在於藉由調變前驅溶液中的摻雜物濃度，以製備具有最低電阻率的氧化鋅透明導電膜，並利用各種量測方式，深入分析摻雜物在氧化鋅內引起的各種效應，以了解不同摻雜濃度在氧化鋅中造成電學與光學特性上變化的原因。 實驗共分為三大主題：摻鋁氧化鋅(AZO)、摻銦氧化鋅(IZO)以及鋁銦共摻雜氧化鋅(AIZO)。在摻鋁氧化鋅的部分中，氧化鋅經過0.67 at%的鋁摻雜可得到最佳的電性，電阻率、載子濃度和載子遷移率分別為1.78×〖10〗^(-2) Ωcm、2.92×〖10〗^19 〖cm〗^(-3)以及12.0〖cm〗^2/Vs，樣品在可見光區皆有高於80%的穿透度。 在摻銦氧化鋅的部分，則是在3.5 at%的銦摻雜下，氧化鋅可得到最佳電性，其電阻率、載子濃度和載子遷移率分別為1.51×〖10〗^(-2) Ωcm、3.25×〖10〗^19 〖cm〗^(-3)以及12.7〖cm〗^2/Vs，樣品在可見光區的穿透度最高可達85%以上。 鋁銦共摻雜氧化鋅的實驗中，在1.2 at%的銦和0.67 at%的鋁混合摻雜的情形下可得到最低之電阻率，其電阻率、載子濃度和載子遷移率分別為7.95×〖10〗^(-3) Ωcm、4.28×〖10〗^19 〖cm〗^(-3)以及18.3〖cm〗^2/Vs，在可見光區的穿透度皆可達到83%以上。 | zh_TW |
| dc.description.abstract | In this study, we investigate the fabrication process to derive N-type ZnO transparent conductive thin films by sol-gel method and discuss the doping effect on ZnO films.
This investigation aims to produce solution-processed ZnO films with lowest resistivity by changing the composition of doping materials. In addition, we wish to realize the effect on electrical and optical properties brought by different doping composition in ZnO films. There are three topics in the thesis：Aluminum-doped ZnO(AZO), Indium-doped ZnO and Aluminum-Indium co-doped ZnO. For Aluminum-doped ZnO, resistivity reaches a minimum value at 0.67% Al doping concentration, with resistivity of 1.78×〖10〗^(-2) Ωcm, electron concentration of 2.92×〖10〗^19 〖cm〗^(-3), and carrier mobility of 12.0〖cm〗^2/Vs. For optical properties, all AZO samples exhibit more than 80% transparent in visible region. For Indium -doped ZnO, resistivity reaches a minimum value at 3.5% In doping concentration, with resistivity of 1.51×〖10〗^(-2) Ωcm, electron concentration of 2.75×〖10〗^19 〖cm〗^(-3), and carrier mobility of 13.0〖cm〗^2/Vs. The IZO samples can reach over than 85% transparent in visible region. For Aluminum-Indium co-doped ZnO, resistivity reaches a minimum value at AIZO film co-doped with 0.67% Al and 1.2 at%, with resistivity of 7.95×〖10〗^(-3) Ωcm, electron concentration of 4.28×〖10〗^19 〖cm〗^(-3), and carrier mobility of 18.3〖cm〗^2/Vs. All AIZO samples demonstrate more than 83% transparent in visible region. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T22:56:58Z (GMT). No. of bitstreams: 1 ntu-101-R99941024-1.pdf: 4195470 bytes, checksum: 577e1b0e52271dd306b471fc1fdc69b9 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii ABSTRACT iii 目錄 iv 圖目錄 vii 表目錄 x 第一章 緒論 1 1.1 前言 1 1.2 研究目的 2 第二章 理論基礎與文獻回顧 3 2.1 透明導電氧化物介紹 3 2.2 氧化鋅的基本性質 5 2.3 氧化鋅透明導電膜的導電機制 7 2.3.1 古典載子傳輸理論 7 2.3.2 影響氧化鋅導電率的因素 10 2.4 氧化鋅透明導電膜的光學性質 13 2.5 溶膠凝膠製備法(Sol-gel technique)介紹 16 2.5.1 前驅溶液的化學反應 16 2.5.2 前驅溶液的塗佈[38] 17 2.5.3 熱處理程序 19 第三章 實驗方法 21 3.1 前驅溶液的調配 21 3.2 基板的準備與清潔 21 3.3 塗佈方法 22 3.4 氧化鋅樣品的熱處理 24 3.5分析儀器及測量原理 24 3.5.1 凡得包量測原理 24 3.5.2 霍爾量測儀 26 3.5.3 紫外-可見光光譜儀(UV-Vis spectrophotometer) 30 3.5.4 X射線繞射儀(X-ray diffraction system, XRD) 31 3.5.5 X光光電子能譜儀(X-ray photoemission spectroscopy, XPS) 32 3.5.6 原子力顯微鏡(Atomic force microscope) 33 第四章 氧化鋁鋅(AZO)樣品分析與討論 35 4.1 霍爾電性量測結果 35 4.2 X射線繞射儀量測結果 37 4.3 原子力顯微鏡(AFM)量測結果 38 4.4 氧化鋁鋅(AZO)電性之分析與討論 40 4.5紫外-可見光光譜儀(UV-vis)量測結果 41 第五章 氧化銦鋅(IZO)樣品分析與討論 45 5.1 霍爾電性量測結果 45 5.2 X射線繞射儀量測結果 47 5.3 原子力顯微鏡(AFM)量測結果 48 5.4 X光光電子能譜儀(XPS)量測結果 50 5.5 氧化銦鋅(IZO)電性之分析與討論 52 5.6紫外-可見光光譜儀(UV-vis)量測結果 54 第六章 氧化鋁銦鋅(AIZO)樣品分析與討論 57 6.1 霍爾電性量測結果 57 6.1.1 不同濃度鋁與1.2 at%銦混合摻雜製備之AIZO電性比較 57 6.1.2 不同濃度銦與1 at%鋁混合摻雜製備之AIZO電性比較 57 6.2 X射線繞射儀量測結果 61 6.3 原子力顯微鏡(AFM)量測結果 63 6.4 氧化鋁銦鋅(AIZO)電性結果之分析與討論 64 6.5 紫外-可見光光譜儀(UV-vis)量測結果 66 第七章 總結與未來展望 69 7.1 總結 69 7.1.1電學性質 69 7.1.2結構特性 69 7.1.3光學特性 70 7.2 未來展望 70 參考文獻 71 | |
| dc.language.iso | zh-TW | |
| dc.subject | 氧化銦鋅 | zh_TW |
| dc.subject | 溶膠凝膠 | zh_TW |
| dc.subject | 透明導電氧化物 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 氧化鋁鋅 | zh_TW |
| dc.subject | sol-gel | en |
| dc.subject | Al-doped ZnO(AZO) | en |
| dc.subject | In-doped ZnO(IZO) | en |
| dc.subject | Zinc oxide (ZnO) | en |
| dc.subject | transparent conductive oxide | en |
| dc.title | 溶膠凝膠法製備鋁及銦摻雜之氧化鋅透明導電膜特性研究 | zh_TW |
| dc.title | Aluminum and Indium-Doped Transparent Conductive Zinc-Oxide Thin Films Deposited by the Sol-Gel Method | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 何志浩(Chih-Hao Ho),陳奕君(I-Chun Cheng) | |
| dc.subject.keyword | 溶膠凝膠,透明導電氧化物,氧化鋅,氧化鋁鋅,氧化銦鋅, | zh_TW |
| dc.subject.keyword | sol-gel,transparent conductive oxide,Zinc oxide (ZnO),In-doped ZnO(IZO),Al-doped ZnO(AZO), | en |
| dc.relation.page | 75 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-08-10 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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