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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64387完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳育任(Yuh-Renn Wu) | |
| dc.contributor.author | Guan-Jung Lai | en |
| dc.contributor.author | 賴冠中 | zh_TW |
| dc.date.accessioned | 2021-06-16T17:44:17Z | - |
| dc.date.available | 2012-08-20 | |
| dc.date.copyright | 2012-08-20 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-14 | |
| dc.identifier.citation | [1] M. George Craford, 'LEDs for solid state lighting and other emerging applications: status, trends, and challenges,' presented at the Fifth International Conference on Solid State Lighting, San Diego, California, USA, Aug. 2005.
[2] A. Zukauskas, Introduction to Solid-State Lighting. New York: John Wiley & Sons, 2002. [3] H. Amano, I. Akasaki, K. Hiramatsu, and N. Sawaki, 'Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE,' JOURNAL OF CRYSTAL GROWTH, vol. 98, p. 209, 1989. [4] N. Isawa, S. Nakamura, M. Swno, and T. Mukai, 'In situ monitoring and Hall measurements of GaN grown with GaN buffer layers,' J. Appl. Phys., vol. 71, p. 5543, 1992. [5] Takashi Mukai, Shuji Nakamura, and Masayuki Senoh, 'High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes,' J. Appl. Phys., vol. 76, p. 8189, 1994. [6] S. Nakamura, and G. Fasol, The Blue Laser Diode. Berlin: Springer, 1997. [7] J.C. Bhat, D.A. Steigerwald, D. Collins, R.M. Fletcher, M.O. Holcomb, M.J. Ludowise, P.S. Martin, and S.L. Rudaz, 'Illumination With Solid State Lighting Technology,' IEEE J. Select.Topics Quantum Electron., vol. 8, p. 310, 2002. [8] J. Petroski, M. Arik, and S. Weavery, 'Thermal challenges in the future generation solid state lighting applications: light emitting diodes,' presented at the ITHERM 2002,, San Diego, California,May 2002. [9] Y. Gao, T. Fujii, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, 'Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,' Appl. Phys. Lett. , vol. 84, p. 855, 2004. [10] J. N. Kuznia, M. Asif Khan, A. R. Bhattarai, and D. T. Olson, 'Metal semiconductor field effect transistor based on single crystal GaN,' Appl. Phys. Lett., vol. 62, p. 1786, 1993. [11] Takashi Mukai, Shuji Nakamura, and Masayuki Senoh, 'Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes,' Appl. Phys. Lett., vol. 64, p. 1687, 1994. [12] Daisuke Morita, Takashi Mukai, and Shuji Nakamura, 'High-power UV InGaN/AlGaN double-heterostructure LEDs,' Journal of Crystal Growth, vol. 189-190, p. 778, 1998. [13] Hiroki Narimatsu, Takashi Mukai, and Shuji Nakamura, 'Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures,' Japanese Journal of Applied Physics, vol. 37, p. L479, 1998. [14] Jong-Lam, and Lee Soo-Young Kim, 'Highly Reflective and Low-Resistant Ni/Au/ITO/Ag Ohmic Contact on p-Type GaN,' Electrochem. Solid-State Lett., vol. 7, p. G102, 2004. [15] J. Petroski, S. Aanegola, and E. Radkov, 'let there be LIGHT,' SPIE's oemagazine, vol. 5, p. 16, 2003. [16] E. F. Schubert, Light Emitting Diodes. Cambridge: Cambridge University Press, 2003. [17] Tsunemasa Taguchi, 'Light Gets Solid,' SPIE's oemagazine, vol. 5, p. 13, 2003. [18] Atsushi Motogaito, Hideto Miyake, and Kazumasa Hiramatsu, 'Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy,' Jpn. J. Appl. Phys., vol. 38, p. L1000, 1999. [19] L. Zhao, P. Fini, B. Moran, M. Hansen, H. Marchand, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra, and J. S. Speck, 'High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers,' Appl. Phys. Lett. , vol. 75, p. 1706, 1999. [20] W. M. Ashmawi, T. S. Zheleva, and K. A. Jones, 'Pendeo-Epitaxy versus Lateral Epitaxial Overgrowth of GaN: A Comparative Study via Finite Element Analysis,' physica status solidi (a), vol. 176, p. 545, 1999. [21] Song Jae Lee, 'Analysis of Light-Emitting Diodes by Monte Carlo Photon Simulation,' Applied Optics, vol. 40, p. 1427, 2001. [22] C. Y. Lin, C. C. Sun, T. X. Lee, and T. H. Yang, 'Enhancement of light extraction of GaN-based LED with introducing micro-structure array,' Optical Engineering (Letters), vol. 17, p. 1700, 2004. [23] Chao-Ying Lin, Tsung-Xian Lee, Shih-Hsin Ma, and Ching-Cherng Sun, 'Analysis of position-dependent light extraction of GaN-based LEDs,' Optics Express, vol. 13, p. 4175, 2005. [24] David K. Cheng, “Field and Wave Electromagnetics,” Addison-Wesley ,1989. [25] B. Hahn, V. Haerle, S. Kaiser, A. Weimar, D. Eisert, S. Bader, A. Ploessl, and F. Eberhard, 'Light Extraction Technoligies for high-efficiency gainn-led devices,' Proc. SPIE, vol. 4996, p. 133-138, 2003. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64387 | - |
| dc.description.abstract | 在本論文中，我們建構了二維的蒙地卡羅光跡追蹤法，並且輔以實驗室所開發的2D-DDCC模擬程式，解出飄移、擴散以及帕松方程式。
藉由結合這兩種程式，我們可以得到電流的資訊，發光輻射結合率分佈，並以此值帶入跑出元件的光萃取效率，如同我們所知，大部分發光二極體材料的折射率都大於空氣，所以大部分的光子入射在材料介質與空氣的交界上，會因為小角度的全反射角而返回元件中，這代表光很有可能會被元件吸收轉成熱能，以及造成了電流驟降的現象。 所以在發光二極體的光萃取效率優化上，二維蒙地卡羅光跡追蹤法扮演重要的角色。而我們將它運用在研究不同形狀的表面圖形化粗化、以及金屬接面的粗話與否對整體出光的影響，不同的n型氮化鎵層厚度以及多個電極設計、金屬大小不同對光萃取效率的影響。 | zh_TW |
| dc.description.abstract | In this thesis, we have developed a 2D Monte Carlo ray tracing method combined with our developed 2D-DDCC ( 2 Dimentional Drift Diffusion Charge Control ) program to solve Drift-Diffusion and Poisson equations.
By combining these two techniques, we can obtain the carrier information, radiative recombination rate to estimate the device light extraction efficiency. As we know, most materials used for LED production have much higher refractive indices than the air. This means that many photons will be reflected back into the semiconductor at the medium/air interface due to the small total reflection angle. They also may be absorbed and be turned into heat, and making the LED efficiency droop. Therefore, 2D Monte Carlo ray tracing method plays important roles in optimizing the light extraction efficiency in the LED device. So we have applied our method to study in this thesis. We have studied several factors to enhance light extraction efficiency such as the changes in different shaped of roughness, metal area with roughness surface or flat surface, different n-GaN thickness , multiple metal contacts and different metal sizes. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T17:44:17Z (GMT). No. of bitstreams: 1 ntu-101-R98941102-1.pdf: 4212930 bytes, checksum: 93b6e8a242a3c3380c3d8b3547d90324 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | Abstract I
摘要 II 目錄 III 圖目錄 V 第一章 緒論 1 1-1 LED的簡介 1 1-2 垂直式與水平式 LED 4 1-3 LED 發光效率 ( efficiency ) 6 1-4 研究動機與目的 7 第二章 光學原理以及分析方式介紹 11 2-1 蒙地卡羅法 ( Monte carlo method ) 11 2-2 吸收係數 ( Absorption coefficient ) 12 2-3 折射與反射定律 ( Reflection & Refraction law ) 13 2-4菲涅耳方程式 ( Fresnel equation ) 15 2-5布魯斯特角 ( Brewster’s angle ) 17 2-6反射率 ( Reflectivity ) 18 第三章 表面微結構粗化對光萃取效率影響 20 3-1 微結構粗化 LED 的基本架構以及模擬分析方式 20 3-2 各種幾何形狀微結構粗化 LED 的光萃取效率分析 24 3-2-1 矩形微結構粗化 LED 的光萃取效率分析 26 3-2-2 三角形微結構粗化 LED 的光萃取效率分析 30 3-2-3 梯形微結構粗化 LED 的光萃取效率分析 36 3-2-4 不規則形微結構粗化 LED 的光萃取效率分析 38 3-3 最佳化結構 41 第四章 電極與n型氮化鎵層設計對出光影響 43 4-1 電極大小對光萃取效率的影響 43 4-2 電極設計對光萃取效率的影響 48 4-3 n型氮化鎵層厚度變化對光萃取效率的影響 51 4-4 最佳化設計 53 第五章 結論 56 第六章 參考文獻 58 | |
| dc.language.iso | zh-TW | |
| dc.subject | 光萃取效率 | zh_TW |
| dc.subject | 發光二極體 | zh_TW |
| dc.subject | 蒙地卡羅 | zh_TW |
| dc.subject | 粗化 | zh_TW |
| dc.subject | Light Emiiting Diodes | en |
| dc.subject | roughening | en |
| dc.subject | Light emitting Diodes | en |
| dc.subject | Monte Carlo | en |
| dc.title | 垂直型發光二極體表面微結構粗化形狀對光萃取效率影響之研究 | zh_TW |
| dc.title | Study of Light Extraction Efficiency of Vertical Light Emiiting Diodes with Textured Surface roughening | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳奕君(I-Chun Cheng),陳建彰(Chien-Chang Chen),吳志毅(Chih-I Wu) | |
| dc.subject.keyword | 發光二極體,粗化,光萃取效率,蒙地卡羅, | zh_TW |
| dc.subject.keyword | Light Emiiting Diodes,roughening,Light emitting Diodes,Monte Carlo, | en |
| dc.relation.page | 60 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-08-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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