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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳建彰(Jian-Zhang Chen) | |
dc.contributor.author | Bo-Wei Huang | en |
dc.contributor.author | 黃柏崴 | zh_TW |
dc.date.accessioned | 2021-06-16T17:40:46Z | - |
dc.date.available | 2017-08-28 | |
dc.date.copyright | 2012-08-28 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-14 | |
dc.identifier.citation | 第一章參考文獻
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M. Mehra, A. Wakahara, and A. Yoshida, 'P-type conduction in codoped ZnO thin films,' Journal of Applied Physics, vol. 93, pp. 396-399, Jan 1 2003. [14] Y. F. Yan, M. M. Al-Jassim, and S. H. Wei, 'Doping of ZnO by group-IB elements,' Applied Physics Letters, vol. 89, p. 181912, Oct 30 2006. [15] Y. W. Song, K. Kim, J. P. Ahn, G. E. Jang, and S. Y. Lee, 'Physically processed Ag-doped ZnO nanowires for all-ZnO p-n diodes,' Nanotechnology, vol. 20, p. 275606, Jul 8 2009. [16] K. Samanta, P. Bhattacharya, and R. S. Katiyar, 'Raman scattering studies of P-type Sb-doped ZnO thin films,' Journal of Applied Physics, vol. 108, p. 113501, Dec 1 2010. [17] H. Kawazoe, H. Yanagi, K. Ueda, and H. Hosono, 'Transparent P-type conducting oxides: Design and fabrication of p-n heterojunctions,' Mrs Bulletin, vol. 25, pp. 28-36, Aug 2000. [18] G. Dong, M. Zhang, W. Lan, P. Dong, and H. Yan, 'Structural and physical properties of Mg-doped CuAlO2 thin films,' Vacuum, vol. 82, pp. 1321-1324, Jun 19 2008. [19] P. M. Dong, M. Zhang, G. B. Dong, X. P. Zhao, and H. Yan, 'The optical and electrical properties of Zn-doped CuAlO2 thin films deposited by RF magnetron sputtering,' Journal of the Electrochemical Society, vol. 155, pp. H319-H322, 2008. [20] G. B. Dong, M. Zhang, T. X. Li, and H. Yan, 'Co-doping Effect of Ca and N on the Structure and Properties of CuAlO2 Thin Film,' Journal of the Electrochemical Society, vol. 157, pp. H127-H130, 2010. [21] W. Lan, W. L. Cao, M. Zhang, X. Q. Liu, Y. Y. Wang, E. Q. Xie, and H. Yan, 'Annealing effect on the structural, optical, and electrical properties of CuAlO2 films deposited by magnetron sputtering,' Journal of Materials Science, vol. 44, pp. 1594-1599, Mar 2009. [22] M. Neumann-Spallart, S. P. Pai, and R. Pinto, 'PLD growth of CuAlO2,' Thin Solid Films, vol. 515, pp. 8641-8644, Oct 15 2007. [23] Z. H. Deng, X. D. Fang, R. H. Tao, W. W. Dong, D. Li, and X. B. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64324 | - |
dc.description.abstract | 銅鋁氧化物為深具潛力的P型透明導電材料。在室溫沉積之銅鋁氧化物呈現非晶態,故本研究嘗試以Ca摻雜來降低薄膜電阻率,並探討熱退火對薄膜材料以及二極體元件的影響。
本實驗利用射頻磁控濺鍍機,於室溫下沉積不同Ca摻雜濃度之銅鋁氧化物薄膜。從低掠角繞射儀(GIXRD)分析未退火薄膜結構成非晶態,並以EPMA來分析薄膜成分。本研究同時以XPS分析未退火薄膜中Cu+離子以及Cu2+離子的含量,以界定未退火薄膜中的鍵結狀況。在電性方面,以CuAl0.8Ca0.2O2靶材於純氧的氣氛下沉積之薄膜具有最低的電阻率;於純氧下沉積未退火之CuAl0.8Ca0.2O2薄膜經由霍爾量測,其載子遷移率為1.02 cm2/V-s,載子濃度為1.289×1017 cm-3 ,霍爾係數為69.2 m2/C,導電率為0.02 S-cm-1。量得之Seebeck係數為230 (μV/K),証實確有P-型導電之性質。之後我們進一步將未退火之CuAl1-xCaxO2薄膜製作成異質接面二極體,且發現在Ar:O2=15:10的氣氛下沉積且未退火之CuAl0.8Ca0.2O2薄膜與剛沉積之AZO 3wt%薄膜具有最佳的整流性質。CuAl0.8Ca0.2O2 / AZO 3wt% 所形成之二極體,其崩潰電壓為-4.04 V,啟動電壓為 0.8V,而整流值為273。 薄膜在退火至600oC 結晶尚不明顯,且電阻率也大幅上升,較未退火薄膜電阻率來得高出許多。在退火至900oC之後的CuAl1-xCaxO2薄膜並非純的銅鋁氧化結晶相,且由SEM中觀察到析出物的產生。在Ar:O2=15:10的氣氛下沉積且退火至900oC之CuAl0.8Ca0.2O2薄膜其電阻率為276 Ω-cm。由實驗中我們發現,Ca的摻雜取代Al會使銅鋁氧化物的結晶相較不容易形成,此一現象隨著Ca濃度上升而更明顯。之後我們將退火900oC之CuAl1-xCaxO2薄膜與AZO 3wt%製作成二極體元件,退火至900oC之CuAl0.8Ca0.2O2 / 剛成膜之AZO 3wt% 所形成之二極體,其崩潰電壓為-1.73V,啟動電壓為2.66V,而整流值為0.25。 由本實驗我們發現未退火之CuAl1-xCaxO2薄膜與AZO 3wt% 有較佳的二極體曲線,且透過霍爾量測以及熱電量測驗證Ca摻雜CuAlO2薄膜在室溫濺鍍下會具有P型的導電性質。 本實驗中,退火至900oC之CuAl1-xCaxO2薄膜不是純的銅鋁氧化物結晶相。為了製作出純的銅鋁氧化物,我們透過調變Al在靶材中的濃度。我們設計了CuAlx-0.2Ca0.2O2 (=1.25、1.75、2) 的靶材參數,將CuAlx-0.2Ca0.2O2沉積於石英基板上,並於氮氣中退火至900oC,持溫5小時。最後我們透過GIXRD發現當x達1.75時,在Ca摻雜的情況下會有純的銅鋁有化物相的產生。 | zh_TW |
dc.description.abstract | Copper aluminum oxide is one of potential candidates for P-type transparent conducting oxides. In this study, the films are deposited using RF-sputtering technique. The as-deposited copper aluminum oxide thin films are amorphous. Calcium is introduced to reduce the resistivity of the thin films. We also investigate the influence of thermal annealing effect on the characteristics of calcium doped CuAlO2 thin films and heterojunction diodes.
The films are deposited using RF-sputtering technique with one compound target at room temperature. From the results of glancing angle X-ray diffraction the as-deposited calcium doped CuAlO2 thin films are amorphous. Film compositions are evaluated by wavelength dispersion spectroscopy, and the compositions of Cu+ and Cu2+ are identified by XPS. CuAl0.8Ca0.2O2 sputter-deposited under O2 ambient exhibit lowest electrical resistivity. The carrier concentration is 1.02 cm2/V-s,carrier density is 1.289×1017 cm-3 , hall coefficient is 69.2 m2/C, conductivity is 0.02 S-cm-1. Seebeck coefficient of as-deposited CuAlO2 thin film is 230 μV/K. P-N diode of as-deposited CuAl0.8Ca0.2O2 /AZO 3wt% exhibits best diode properties. The turn on voltage is 0.8V and breakdown voltage is -4.04 V and the rectifying ratio is 273. The crystallinity of 600 oC×5hr annealed thin films can not be observed using GIXRD. The resistivity of the 600 oC×5hr annealed thin film is also higher than as-deposited one. When the annealing temperature is raised to 900 oC, the crystalline phase is not pure CuAlO2. The precipitates can also be observed using SEM. The resitivity of 900oC annealed CuAl0.8Ca0.2O2 is around 276 Ω-cm. The substitution of Al with Ca deteriorates the phase formation of CuAlO2 ; the amount of CuAlO2 phase decrease as the Ca concentration increases. 900oC annealed CuAl1-xCaxO2 is used with 3wt% AZO to form heterojunction diodes. The breakdown voltage is around -1.73 V; the turn-on voltage is around 2.66 V; the rectifying ratio is around 0.25. The diodes fabricated using room temperature deposited CuAl1-xCaxO2 and 3wt% AZO exhibit better diode performance. Through Hall measurement and seeback coefficient measurement, it is verified that room temperature sputtered CuAl1-xCaxO2 reveals P-type conductivity. To obtain pure phase CuAlO2 thin film, the Al content in the target is varied. Targets of CuAlx-0.2Ca0.2O2 (x=1.25, 1.75, 2) are used for the film deposition on quartz substrates. After 900oC×5hr thermal annealing in N2 , we obtain pure phase CuAlO2 thin films using CuAl1.55Ca0.2O2 target, verified by GIXRD. | en |
dc.description.provenance | Made available in DSpace on 2021-06-16T17:40:46Z (GMT). No. of bitstreams: 1 ntu-101-R99543055-1.pdf: 10050484 bytes, checksum: 4098e7ad1c487f95e42c09a30b7bdcb2 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 目錄
致謝…………………………………………………………………….………………I 中文摘要………………………………………………………………………....……II Abstract…………………………………………………………………………….…IV 目錄…………………………………………………………………………………...VI 圖目錄…………………………………………………………………..………….…IX 表目錄………………………………………………………………………..………XV 第一章 緒論 1 1.1前言………………………………………………………………………………..1 1.2研究動機…………………………………………………………………………..1 1.3論文架構…………………………………………………………………………..2 第二章 6 2.1 P型透明導電氧化物……………………………………………………….…......7 2.1.1氧化鎳(Nickel Oxide,NiO)………………………………………………… .7 2.1.2銅系列(Copper base,CuAO2,A=Ga、Sc、ln、Al等)………………………….8 2.1.3氧化鋅系列(Zinc Oxide Base)………………………………………………11 2.2 CuAlO2簡介………………………………………………………………….…..14 2.2.1發展由來…………………………………………………………………….14 2.2.2銅鋁氧化物的導電機制…………………………………………………….16 2.2.3銅鋁氧化物常見的摻雜…………………………………………………….17 2.3退火的影響………………………………………………………………………19 2.4銅鋁氧化物常見的製備方式……………………………………………………21 2.4.1脈衝雷射沉積(Pulsed Laser Deposition ,PLD)…………………………....21 2.4.2濺鍍(Sputter)………………………………………………………………...22 2.4.3溶膠凝膠法………………………………………………………………….22 2.5異質接面二極體…………………………………………………………………23 2.5.1接面原理…………………………………………………………………….23 2.5.2異質接面…………………………………………………………………….23 2.5.3異質接面二極體之回顧…………………………………………………….24 2.6熱電效應…………………………………………………………………………28 第三章 實驗方法 32 3.1實驗流程…………………………………………………………………………32 3.1.1實驗前準備………………………………………………………………….32 3.1.2濺鍍儀器以及濺鍍流程…………………………………………………….34 3.1.3異質接面二極體之製作流程……………………………………………….35 3.2量測分析…………………………………………………………………………36 3.2.1電子微探儀(Electron Probe Micro Analyzer, EPMA)……………………...36 3.2.2電性量測…………………………………………………………………….36 3.2.3光學性質量測……………………………………………………………….37 3.2.4掠角X光繞射量測(Grazing Incident X-Raydiffusion,GIXRD)…………37 3.2.5 X光電子能譜儀(X-ray Photoelectron Spectroscopy,XPS)………………40 3.2.6 熱電性質量測(Thermal-electrical property)……………………………….41 第四章 結果與討論 43 4.1靶材分析…………………………………………………………………….…...43 4.1.1靶材結構分析…………………………………………………………….....43 4.1.2 鍍膜及沉積速率…………………………………………………………....46 4.2薄膜材料分析…………………………………………………………………....47 4.2.1薄膜成分分析…………………………………………………………….....45 4.2.2表面型態分析……………………………………………………………….50 4.2.3薄膜電性…………………………………………………………………….60 4.2.4 薄膜光學量測……………………………………………………………....63 4.2.4.1光學穿透分析…………………………………………………………..64 4.2.4.2 Tauc’s plot能隙估算法…………………………………………………70 4.2.5 薄膜晶格結構分析…………………………………………………………76 4.2.6 XPS分析…………………………………………………………………….84 4.2.7霍爾量測…………………………………………………………………….97 4.2.8 熱電性質分析………………………………………………………………97 4.3異質接面二極體…………………………………………………………………99 4.3.1異質接面二極體之製作流程與結構……………………………………….99 4.3.2異質接面二極體之電壓電流特性曲線………………………………….100 4.4純的銅鋁氧化物……………………………………………………………….111 第五章 結論與未來展望 115 圖目錄 圖2.1.a Sato 於1993 年發表的NiO 與ZnO 所組成之異質接面二極體…………7 圖2.1.b為 H.Shimotani等人利用NiO所製作出來的薄膜電晶體特性曲線……....8 圖2.2 為delafossite 結構的示意圖………………………………………………….9 圖2.3 為CuGaO2 薄膜其導電率隨氧分壓上升的情形………………………...….9 圖2.4 為利用CuInO2 製作而成之異質接面二極體…………………………...…10 圖2.5 為氧化鋅薄膜在不同的分壓下之穿透圖………………………..………....12 圖2.6 氧化鋅摻銀與鎵製作而成的異質接面二極體……………………………..12 圖2.7 為氧化鋅銻薄膜的穿透圖為………………………………………………..13 圖2.8 為價帶化學調變示意圖……………………………………………………..14 圖2.9 為Delafossite結構…………………………………………………………...15 圖2.10 CuAlO2:Mg 之穿透光譜以及直接與間接能隙隨摻雜濃度的變化……....17 圖2.11 CuAlO2:Zn薄膜其穿透隨鋅摻雜的變化及薄膜電性隨氧氣分壓的變 化…………………………….……………………………...………………..18 圖2.12 CuAlO2:Ca薄膜穿透光譜隨摻雜濃度的變化與Figure of merit…………..19 圖2.13為銅鋁氧化物在不同退火條件下的結晶狀況……………………………..20 圖2.14 在氮氣下退火不同溫度之穿透光譜圖……………………………………21 圖2.15第一型的異質接面…………………………………………………………..23 圖2.16 第二型的異質接面………………………………………………………....24 圖2.17 第三型的異質接面………………………………………………………....24 圖2.18為 Shu -Yi Tsai等人所製作的異質接面二極體以及其I-V curve……...…25 圖2.19 NiO與ZnO所形成之接面的能帶結構…………………………………..…25 圖2.20 CuAlO2/AZO之異質接面二極體的結構圖、穿透圖以及I-V Curve………26 圖2.21 CuCrO2:Mg/AZO 之異質接面二極體的結構圖及其I-V Curve………..…26 圖2.22 SrCu2O2/ZnO 之異質接面二極體的結構圖及其I-V Curve….…………..27 圖2.23 AgCoO2/ZnO之異質接面二極體的結構圖及其I-V Curve…………….....27 圖2.24為Ca摻雜銅鋁氧化物塊材及其Seebeck係數之量測……………………28 圖3.1.1為真空濺鍍機之示意圖………………………...…………………………..34 圖3.1.2為異質接面二極體之側示意圖…………………….………………………35 圖3.2.2為兩點量測之示意圖…………………...…………………………………..36 圖3.2.4.1傳統 XRD 幾何示意圖與低掠角XRD示意圖……………..…………..37 圖3.2.4.2偵測器示意圖……………………………………………………………..38 圖3.2. 4.3非對稱布拉格角示意圖……………………………………………….....38 圖 3.2.4.4 傳統 X光源控制器Soller Slit與 D8 之光源控制器 Göbel mirror之比 較…………………………………………………………………………39 圖3.2.4.5為 Bruker D8 Discover低掠角 X光繞射儀之示意圖…………………..39 圖3.2.6 為熱電性質量測架構…………………………………………………...…41 圖4.1.1 摻雜不同比例之銅鋁氧化物靶材之XRD繞射圖………………………..43 圖4.1.2 為銅鋁氧化物靶材及其沉積薄膜之XRD圖………………….……….....44 圖4.1.3 CuAl0.75Ca0.25O2靶材之照片….……………………………………….…...45 圖4.2.2.1~圖4.2.2.5 為在 Ar:O2=15:10氣氛下沉積的鈣摻雜銅鋁氧化物薄膜之 SEM 圖………………………………………………………51 圖4.2.2.6~ 圖4.2.2.10為在Ar:O2=15:10氣氛下沉積的鈣摻雜銅鋁氧化物薄膜 且於氮氣中退火 600 °C,5小時之SEM圖…………..….52 圖4.2.2.11~圖4.2.2.15 為在 Ar:O2=15:10氣氛下沉積的鈣摻雜銅鋁氧化物薄膜 且於氮氣中退火 900 °C,5小時之SEM圖…………..….53 圖4.2.2.16~圖4.2.2.20為在Ar:O2= 0 :10氣氛下剛沉積的鈣摻雜銅鋁氧化物薄膜 之SEM圖………………………………………………….54 圖4.2.2.21~圖4.2.2.25為在Ar:O2= 0 :10氣氛下沉積的鈣摻雜銅鋁氧化物薄膜且 於氮氣中退火600°C,5小時之SEM圖……………….…..55 圖4.2.2.26~圖4.2.2.30為在Ar:O2= 0 :10氣氛下沉積的鈣摻雜銅鋁氧化物薄膜且 於氮氣中退火900°C,5小時之SEM圖……………….…56 圖4.2.2.31~圖4.2.2.35為在Ar:O2=15: 0氣氛下剛沉積的鈣摻雜銅鋁氧化物薄膜 之SEM圖………………………………………………….57 圖4.2.2.36~圖4.2.2.40為在Ar:O2=15: 0氣氛下沉積的鈣摻雜銅鋁氧化物薄膜且 於氮氣中退火600°C,5小時之SEM圖……………….....58 圖4.2.2.41~圖4.2.2.46為在Ar:O2=15: 0氣氛下沉積的鈣摻雜銅鋁氧化物薄膜且 於氮氣中退火900°C,5小時之SEM圖……………….…59 圖4.2.3 為B試片之GIXRD圖………………………………………………….….63 圖4.2.4.1.1為濺鍍氣氛Ar : O2 = 15 :10不同後熱退火溫度之CuAl1-xCaxO2薄膜 (x=0、0.05、0.1、0.15、0.2)之穿透光譜………………………………….64 圖4.2.4.1.2為濺鍍氣氛Ar : O2 = 0 :10 不同後熱退火溫度之CuAl1-xCaxO2薄膜 (x=0、0.05、0.1、0.15、0.2)之穿透光譜……………………………….…65 圖4.2.4.1.3為濺鍍氣氛Ar : O2 = 15 : 0 不同後熱退火溫度之CuAl1-xCaxO2薄膜 (x=0、0.05、0.1、0.15、0.2)之穿透光譜……………………………….....65 圖4.2.4.1.4 為濺鍍氣氛Ar:O2=15:10,CuAl1-xCaxO2(x=0、0.05、0.1、0.15、0.2)薄膜在不同材料、不同後退火溫度下的穿透光譜……………………67 圖4.2.4.1.5為濺鍍氣氛Ar:O2=15: 0,CuAl1-xCaxO2(x=0、0.05、0.1、0.15、0.2)薄膜在不同材料、不同後退火溫度下的穿透光譜……………….…...68 圖4.2.4.1.6為濺鍍氣氛Ar:O2= 0 :10,CuAl1-xCaxO2(x=0、0.05、0.1、0.15、0.2)薄膜在不同材料、不同後退火溫度下的穿透光譜……………………69 圖4.2.4.3.1為濺鍍氣氛Ar : O2= 15 : 10 CuAl1-xCaxO2薄膜在未退火及600°C、900°C後熱退火處理之Tauc’s plot…………………………………….71 圖4.2.4.3.2為濺鍍氣氛Ar : O2= 15 : 0 CuAl1-xCaxO2薄膜在未退火及600°C、900°C後熱退火處理之Tauc’s plot……………………………………………72 圖4.2.4.3.3為濺鍍氣氛Ar : O2= 0 :10 CuAl1-xCaxO2薄膜在未退火及600°C、900°C後熱退火處理之Tauc’s plot……………………………………………73 圖4.2.5.1為濺鍍氣氛Ar : O2=15:0 CuAl1-xCaxO2薄膜在未退火及600°C、900°C 後熱退火處理之低掠角X光繞射頻譜…………………………..………77 圖4.2.5.2為濺鍍氣氛Ar : O2=15:10 CuAl1-xCaxO2薄膜在未退火及600°C、900°C 後熱退火處理之低掠角X光繞射頻譜……………………..……………80 圖4.2.5.3為濺鍍氣氛Ar : O2=0 :10 CuAl1-xCaxO2薄膜在未退火及600°C、900°C後熱退火處理之低掠角X光繞射頻譜……………………………..........82 圖4.2.6.1為濺鍍氣氛Ar : O2=15:0 CuAlO2薄膜未退火之XPS頻譜分析..………84 圖4.2.6.2為濺鍍氣氛Ar : O2=15:0 CuAl0.95Ca0.05O2薄膜未退火之XPS頻譜分析………………………………………………………………………......85 圖4.2.6.3為濺鍍氣氛Ar : O2=15:0 CuAl0.9Ca0.1O2薄膜未退火之XPS頻譜分析……………………………………………………………………….….85 圖4.2.6.4為濺鍍氣氛Ar : O2=15:0 CuAl0.85Ca0.15O2薄膜未退火之XPS頻譜分析………………………………………………………………………..…86 圖4.2.6.5為濺鍍氣氛Ar : O2=15:0 CuAl0.8Ca0.2O2薄膜未退火之XPS頻譜分析…………………………………………………………………………..86 圖4.2.6.6 為濺鍍氣氛Ar : O2=15:0未退火之CuAl1-xCaxO2薄膜中Cu+/Cu2+含量比…………………………………………………………………………..87 圖4.2.6.7為濺鍍氣氛Ar : O2=15:10 CuAlO2薄膜未退火之XPS頻譜分析…........88 圖4.2.6.8為濺鍍氣氛Ar : O2=15:10 CuAl0.95Ca0.05O2薄膜未退火之XPS頻譜分析…………………………………………………………………………..89 圖4.2.6.9為濺鍍氣氛Ar : O2=15:10 CuAl0.9Ca0.1O2薄膜未退火之XPS頻譜分析…………………………………………………………………………..89 圖4.2.6.10為濺鍍氣氛Ar : O2=15:10 CuAl0.85Ca0.15O2薄膜未退火之XPS頻譜析..................................................................................................................90 圖4.2.6.11為濺鍍氣氛Ar : O2=15:10 CuAl0.8Ca0.2O2薄膜未退火之XPS頻譜分析…………………………………………………………………………..90 圖4.2.6.12 為濺鍍氣氛Ar : O2=15:10未退火之CuAl1-xCaxO2薄膜中Cu+/Cu2+含比..................................................................................................................91 圖4.2.6.13為濺鍍氣氛Ar : O2=0 :10 CuAlO2薄膜未退火之XPS頻譜分析……...92 圖4.2.6.14為濺鍍氣氛Ar : O2=0 :10 CuAl0.95Ca0.05O2薄膜未退火之XPS頻譜分析………………………………………………………………………......93 圖4.2.6.15為濺鍍氣氛Ar : O2=0 :10 CuAl0.9Ca0.1O2薄膜未退火之XPS頻譜分析…………………………………………………………………………..93 圖4.2.6.16為濺鍍氣氛Ar : O2=0 :10 CuAl0.85Ca0.15O2薄膜未退火之XPS頻譜分析…………………………………………………………………………..94 圖4.2.6.17為濺鍍氣氛Ar : O2=0 :10 CuAl0.8Ca0.2O2薄膜未退火之XPS頻譜分析…………………………………………………………………………..94 圖4.2.6.18 為濺鍍氣氛Ar : O2=0:10未退火之CuAl1-xCaxO2薄膜中Cu+/Cu2+含比…………………………………………………………………………..95 圖4.3.1.1為異質接面二極體之元件製作流程……………………………………..99 圖4.3.1.2為異質接面二極體之元件結構………………………………………..100 圖4.3.2.1為Ar:O2= 15: 10(2mtorr)下沉積之CuAl1-xCaxO2薄膜未退火、退火600°C、退火900°C與AZO 3wt%薄膜之異質接面二極體曲線………………..101 圖4.3.2.2為Ar:O2= 0: 10(2mtorr)下沉積之CuAl1-xCaxO2薄膜未退火、退火600°C、退火900°C與AZO薄膜之異質接面二極體曲線……………………...104 圖4.3.2.3為Ar:O2= 15: 0(2mtorr)下沉積之CuAl1-xCaxO2薄膜未退火、退火600°C、退火900°C與AZO薄膜之異質接面二極體曲線……………………...107 圖4.3.2.4為Ar:O2= 0 : 10(2mtorr)下沉積之CuAl0.8Ca0.2O2薄膜未退火、退火600°C、退火900°C與AZO薄膜之異質接面二極體曲線………………...……108 圖4.3.2.4為Ar:O2=15: 10(2mtorr)下沉積之CuAl0.8Ca0.2O2薄膜未退火、退火600°C、退火900°C與AZO薄膜之異質接面二極體曲線…………………..….109 圖4.4.1為濺鍍氣氛Ar : O2 =15:10 CuAlx-0.2Ca0.2O2薄膜在900°C後熱退火處理之 低掠角X光繞射頻譜……………………………………………………..111 圖4.4.2為濺鍍氣氛Ar: O2=15: 0 CuAlx-0.2Ca0.2O2薄膜在1050oC後熱退火處理之SEM圖………………………………………………………………...…113 表目錄 表2.1常見的N型TCO之電阻率與透光率之比較………………………………….6 表2.2常見的P型TCO之電阻率與透光率之比較…………………………………..6 表4.1.1靶材結晶方位及種類列表……………………………………………….....44 表4.1.2各種不同條件下之鈣摻雜銅鋁氧化物的沉積速率……………………….46 表4.2.1鈣摻雜銅鋁氧化物在純氧氣氛下薄膜中的元素比例…………………….47 表4.2.2鈣摻雜銅鋁氧化物在Ar:O2=15:10…………………………………………48 表4.2.3鈣摻雜銅鋁氧化物在純氬氣氛下薄膜中的元素比例…………………….49 表4.2.3.1為濺鍍氣氛Ar:O2= 0:10在未退火、退火600°C以及退火900°C之薄膜 電阻率……………………………………………………………………60 表4.2.3.2為濺鍍氣氛Ar:O2= 15:10在未退火、退火600°C以及退火900°C之薄膜電阻率…………………………………………………………………..61 表4.2.3.3為濺鍍氣氛Ar:O2= 15: 0在未退火、退火600°C以及退火900°C之薄膜電阻率…………………………………………………………………..61 表4.2.3.4為濺鍍氣氛Ar:O2= 15: 0退火900°C之薄膜電阻率………………….....62 表4.2.3.5為圖4.2.3的詳細繞射峰資料………………………………………….....63 表4.2.4.3.1為濺鍍氣氛Ar : O2= 15 : 10 CuAl1-xCaxO2薄膜之直接能隙………….74 表4.2.4.3.2為濺鍍氣氛Ar : O2=15: 10 CuAl1-xCaxO2薄膜之間接能隙…………...74 表4.2.4.3.3為濺鍍氣氛Ar : O2= 15 : 0 CuAl1-xCaxO2薄膜之直接能隙…………...74 表4.2.4.3.4為濺鍍氣氛Ar : O2= 15 : 0 CuAl1-xCaxO2薄膜之間接能隙…………...75 表4.2.4.3.5為濺鍍氣氛Ar : O2=0: 10 CuAl1-xCaxO2薄膜之直接能隙…………….75 表4.2.4.3.6為濺鍍氣氛Ar : O2=0: 10 CuAl1-xCaxO2薄膜之間接能隙…………….75 表4.2.5.1為濺鍍氣氛Ar : O2=15:0 CuAl1-xCaxO2薄膜在900°C後熱退火之結晶方位及種類列表……………………………………………………………..78 表4.2.5.2為濺鍍氣氛Ar : O2=15 :10 CuAl1-xCaxO2薄膜在900°C後熱退火之結晶方位及種類列表…………………………………………………………..80 表4.2.5.3為濺鍍氣氛Ar : O2=0 :10 CuAl1-xCaxO2薄膜在900°C後熱退火之結晶方位及種類列表……………………………………………………………..83 表4.2.6.1為濺鍍氣氛Ar : O2=15:0 未退火CuAl1-xCaxO2薄膜Cu+與Cu2+之比例關係……………………………………...………………………………...87 表4.2.6.2為濺鍍氣氛Ar : O2=15:10未退火CuAl1-xCaxO2薄膜Cu+與Cu2+之比例關係………………………………………………………………………..91 表4.2.6.3為濺鍍氣氛Ar : O2=0:10未退火CuAl1-xCaxO2薄膜Cu+與Cu2+之比例關係…………………………………………………………………………..95 表4.2.7為濺鍍氣氛Ar:O2= 0:10且未退火之CuAl0.8Ca0.2O2的霍爾量測數據…...97 表4.2.8.1為CuAl0.8Ca0.2O2在不同氣氛下沉積及後退火所量測之Seebeck係數...97 表4.3.2.1在Ar:O2= 15 :10的氣氛下沉積之CuAl1-xCaxO2薄膜未退火之二極體特性………………………………………………………………………..102 表4.3.2.2在Ar:O2= 15 :10的氣氛下沉積之CuAl1-xCaxO2薄膜為退火600°C之二極體特性………………………………………………………...….........102 表4.3.2.3 在Ar:O2= 15 :10的氣氛下沉積之CuAl1-xCaxO2薄膜為退火900°C之二極體特性…………………………………………………………………..103 表4.3.2.4 在Ar:O2= 0 :10的氣氛下沉積之CuAl1-xCaxO2薄膜未退火之二極體特性…………………………………………………………………………105 表4.3.2.5 在Ar:O2= 0 :10的氣氛下沉積之CuAl1-xCaxO2薄膜為退火600°C之二極體特性……………………………………………………………………105 表4.3.2.6 在Ar:O2= 0 :10的氣氛下沉積之CuAl1-xCaxO2薄膜為退火900°C之二極體特性……………………………………………………………………105 表4.3.2.7 在Ar:O2= 0 :10的氣氛下沉積之CuAl0.8Ca0.2O2薄膜在各種退火溫度下之二極體特性………………………………………………………………109 表4.3.2.8 在Ar:O2=15:10的氣氛下沉積之CuAl0.8Ca0.2O2薄膜在各種退火溫度下之二極體特性………………………………………………………………110 表4.4.1為濺鍍氣氛Ar : O2 =15: 0 CuAlx-0.2Ca0.2O2薄膜在900°C後熱退火之結晶方位及種類列表…………………………………………………………112 | |
dc.language.iso | zh-TW | |
dc.title | 熱退火對鈣摻雜銅鋁氧化物材料及異質接面二極體影響之研究 | zh_TW |
dc.title | The study of thermal annealing effect on Ca doped CuAlO2 material and heterojunction diodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 陳奕君(I-Chun Cheng) | |
dc.contributor.oralexamcommittee | 徐振哲(Cheng-Che Hsu),張世航(Shih-Hang Chang) | |
dc.subject.keyword | 透明導電薄膜,P型,銅鋁氧化物,異質接面二極體, | zh_TW |
dc.subject.keyword | TCO,p-type,CuAlO2,heterojunction diodes, | en |
dc.relation.page | 115 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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