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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳建彰(Jian-Zhang Chen) | |
dc.contributor.author | Hsin-Han Huang | en |
dc.contributor.author | 黃信翰 | zh_TW |
dc.date.accessioned | 2021-06-16T17:36:21Z | - |
dc.date.available | 2014-08-27 | |
dc.date.copyright | 2012-08-27 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-08-15 | |
dc.identifier.citation | 第一章
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64239 | - |
dc.description.abstract | 本論文中利用銀縮合法成為遮罩及乾蝕刻的方式在多孔隙二氧化鈦製作出表面奈米柱結構,經由不同時間下的蝕刻探討奈米柱結構對太陽能電池光電轉換效率的影響;在染料敏化太陽能電池的光電極多孔隙二氧化鈦上共嘗試了三個實驗項目
(1) 在蝕刻後保留縮合過的銀粒子遮罩,此組實驗中效率由標準試片的4.67%在經過一分鐘蝕刻後提升至最高的5.25%,而在蝕刻時間超過五分鐘後,光電轉換效率開始低於標準試片並隨著蝕刻時間增長而下降。 (2) 在蝕刻後以硝酸:水=1:10的溶液移除縮合過的銀粒子遮罩,此組實驗中效率由標準試片的4.67%在經過30秒蝕刻後提升至最高的5.14%,而在蝕刻時間5分鐘的情形下情形類似於第一組實驗下降至約與標準片同樣。 (3) 直接對多孔隙二氧化鈦作電漿乾蝕刻,效率由標準試片的4.67%經過直接蝕刻後效率隨著蝕刻時間的上升而下降至最低3.62%,由此組實驗中我們可以確定光電轉換效率提升的原因是因為表面結構的影響而非電漿的表面處理。 我們從以上三組實驗中發現藉由表面奈米柱結構增加光散射的機會,可提升光電流並增進效率,但乾蝕刻的時間需控制在約一分鐘下,才能避免因蝕刻過多的多孔隙二氧化鈦導致染料吸附量過低而降低光電流。 | zh_TW |
dc.description.abstract | Nanopillar structures are fabricated on nanoporous TiO2 by inductively coupled plasma (ICP) etching using silver-shrunk nanodot shadow masks. The dye-sensitized solar cell (DSSC) conversion efficiency is highly related to the etching time.
Dye-sensitized solar cells are made with nanopillar nanoporous TiO2 photoanodes. Experiments are conducted in following conditions. (1) The shrunk silver nanodot shadow masks are retained on the surface of nanoporous TiO2 photoanodes after ICP etching. The reference sample conversion efficiency is 4.67% (without silver nanodot and ICP etching), and the cell efficiency rises to the highest efficiency of 5.25% after 1 minute dry etching with silver nanodot shadow masks. Then the efficiency reduces again when etching time exceeds 1 minute. (2) The silver nanodot shadow masks are removed by the HNO3:H2O=1:10 solution after the ICP etching process. The cell efficiency rises to 5.14% after 30 second ICP etching. Then the efficiency drops to 4.72% after 5 minutes of ICP etching. (3) The nanoporous TiO2 are directly treated using ICP plasma without silver sphere mask. The conversion efficiency is reduced monotonically from 4.67% (reference sample) to 3.62%(after etching 1 minute). From the experiments, the enhanced cell efficiency is due to the nanopillar structure instead of the plasma treatment. The nanopillar structure would increase the light scattering, thereby improving the photocurrent and the conversion efficiency. When the etching time is too long, the thickness of nanoporous TiO2 is reduced, leading to the decrease of total amount of absorbed dyes and the light being absorbed by the dyes, thereby reducing the cell photocurrent and efficiency. | en |
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dc.description.tableofcontents | 致謝………………………………………………………………………………… Ⅰ
中文摘要……………………………………………..………………………………Ⅱ Abstract………………………………………………………………………………III 目錄………………………………..…………………………………………………VI 圖目錄………………………………………………………………………………VII 表目錄………………………………………………...……………………………...XI 第一章 緒論 1.1 表面結構應用於太陽能電池……………………………………...……………1 1.2 研究動機………………………………………………………………...………1 1.3 論文架構………………………………………………………...………………2 1.4 參考文獻…………………………………………………………...……………2 第二章 基本原理與文獻回顧 2.1 引言………………………………………………...……………………………5 2.2 染料敏化太陽能電池…………………………...………………………………5 2.2.1 光電極………………………………...………………………………… 6 2.2.2 對電極……………………………………………………………………8 2.2.3 染料敏化劑………………………………………………………………8 2.2.4 電解質…………………………..………………………………………..9 2.3 太陽能電池特性參數…………………………...………………………………9 2.3.1 開路電壓………………………………………..………………………10 2.3.2 短路電流……………………………………..…………………………10 2.3.3 填充因子…………………………………..……………………………11 2.3.4 轉換效率………………………………..………………………………11 2.4 參考文獻………………………………….……………………………………11 第三章 樣品製備與分析 3.1 藥品……………………….……………………………………………………13 3.2 儀器………………………….…………………………………………………13 3.2.1 網印機…………………..………………………………………………14 3.2.2 電子束蒸鍍機……………..……………………………………………14 3.2.3 感應藕荷式電漿蝕刻機……..…………………………………………15 3.2.4 太陽能光源模擬器……………..………………………………………16 3.2.5 紫外光-可見光光譜儀…………….……………………………………16 3.3 樣品製備……………………………….………………………………………16 3. 4 參考文獻………………………………………………………………………27 第四章 實驗結果與討論 4.1 染料敏化太陽能電池………………….………………………………………29 4.1.1 表面結構………………………..………………………………………29 4.1.2 光學分析………………………..………………………………………33 4.1.3 電性分析………………………..………………………………………35 4.2 參考文獻…………………………….…………………………………………46 第五章 結論與未來展望 5.1 結論……………………………….……………………………………………47 5.2 未來展望………………………….……………………………………………47 附錄 A.1引言………………………….…………………………………………………..48 A.2 矽晶p-n異質接面太陽能電池………………………………………………...48 A.2.1 矽(Silicon) …………………………………………………………...48 A.2.2 n型銦錫氧化物(Indium tin oxide, ITO) ……………………………49 A.3 接面原理(Junction) ………………………………………………………….50 A.4 光伏特效應(Photovoltaic effect) ………………………………………....54 A.5 表面結構(Surface texturization) …………………………………………55 A.6 表面負離子處理………………………………………………………………..58 A.7 矽晶p-n異質接面太陽能電池使用之材料…………………………………...58 A.8 矽晶p-n異質接面太陽能電池之實驗結果…………………………………...61 A.8.1 表面結構………………………………………………………………..61 A.8.2 光學分析………………………………………………………………..66 A.8.3 電性分析………………………………………………………………..67 A.9 文獻回顧………………………………………………………………………..73 圖目錄 圖2-1 染料敏化太陽能電池之運作機制……………..……………………………6 圖2-2 二氧化鈦的 Rutile 及 Anatase 晶體結構…...……………………………7 圖2-3 太陽能電池照光前後電壓-電流關係圖..….………………………………10 圖3-1 網印機示意圖………………………………………………………………14 圖3-2 電子束蒸鍍機腔體示意圖…………………………………………………15 圖3-3 感應藕荷式電漿蝕刻機腔體示意圖………………………………………16 圖3-4 標準退火條件下鍛燒過後的多孔隙二氧化鈦示意圖……………………19 圖3-5 10nm 銀沉積在多孔隙二氧化鈦上之示意圖………….…………………19 圖3-6 銀退火縮和後之示意圖……………………………………………………20 圖3-7 玻璃製成的遮罩示意圖……………………………………………………20 圖3-8 乾蝕刻後之示意圖..…………..……………………………………………21 圖3-9 乾蝕刻後將銀粒子去除之示意圖..…..……………………………………21 圖3-10 對電極之示意圖………………………..…………………………………22 圖3-11 組合後染料敏化太陽能電之側視圖…..…………………………………23 圖3-12 阻抗與其參數間之關係……………..……………………………………24 圖3-13 Nyquist 分析圖…………………...………………………………………24 圖3-14 染料敏化太陽能電池等效電路圖……..…………………………………25 圖3-15 開路電壓對時間之特性曲線…………..…………………………………26 圖3-16 電子存活生命對開路電壓作圖………..…………………………………26 圖3-17 電子從二氧化鈦到電解液結合的三種路徑…..…………………………27 圖4-1 標準退火程序下的多孔隙二氧化鈦膜表面型態(50000倍) …..…………29 圖4-2 標準退火程序下的多孔隙二氧化鈦膜表面型態-傾角 45 度(50000倍) .30 圖4-3 蝕刻 10 分鐘後多孔隙二氧化鈦膜表面型態(50000倍) …………..……30 圖4-4 蝕刻 10 分鐘後多孔隙二氧化鈦膜表面型態-傾角 45 度(50000倍) .…31 圖4-5 蝕刻 5 分鐘後多孔隙二氧化鈦膜表面型態(50000倍) …………………31 圖4-6 蝕刻 5 分鐘後多孔隙二氧化鈦膜表面型態-傾角 45 度(50000倍) ...…31 圖4-7 蝕刻 1 分鐘後多孔隙二氧化鈦膜表面型態(50000倍) …………………32 圖4-8 蝕刻 1 分鐘後多孔隙二氧化鈦膜表面型態-傾角 45 度(50000倍) ...…32 圖4-9 蝕刻 30 秒後多孔隙二氧化鈦膜表面型態(50000倍) …..………………32 圖4-10 蝕刻 30 秒後多孔隙二氧化鈦膜表面型態-傾角 45 度(50000倍) ...…33 圖4-11 浸泡染料前光電極之光學吸收(保留銀粒子之試片) ………………...…33 圖4-12 浸泡染料前光電極之光學吸收(去除銀粒子之試片) …………..………34 圖4-13 浸泡染料後光電極之光學吸收(保留銀粒子之試片) …..………………34 圖4-14 浸泡染料後光電極之光學吸收(去除銀粒子之試片) …..………………35 圖4-15 為將銀保留在多孔隙二氧化鈦膜上所製成的太陽能電池之電壓-電流特性曲線實驗結果……………………………………………………………………36 圖4-16為蝕刻後將銀粒子移除情形下所製成的太陽能電池之電壓-電流特 性曲線實驗結果……………..………………………………………………………37 圖4-17 直接將標準試片進行乾蝕刻之電壓-電流特性曲線實驗結果………….38 圖4-18 效率對蝕刻時間之作圖..…………………………………………………39 圖4-19 短路電流與蝕刻時間作圖..………………………………………………39 圖4-20 奈氏分析圖-標準退火試片與不同蝕刻條件下試片之比較.……………40 圖4-21 奈氏分析圖-標準退火試片與不同蝕刻條件下試片之比較.……………41 圖4-22 奈氏分析圖-標準退火試片與不同蝕刻條件下試片之比較.……………42 圖4-23 不同蝕刻時間下的開路電壓衰退量測特性曲線……………………..…43 圖4-24 電子存活時間(τ n )對開路電壓之作圖.……………………………….…44 圖4-25 不同蝕刻時間下的開路電壓衰退量測特性曲線……………………..…44 圖4-26 電子存活時間(τ n )對開路電壓之作圖.……………………………….…45 圖4-27 不同蝕刻時間下的開路電壓衰退量測特性曲線……………………..…45 圖4-28 電子存活時間(τ n )對開路電壓之作圖………………………………..…46 圖A-1 p 型摻雜………………………………………………………………….49 圖A-2 n 型摻雜………………………………………………………………… 49 圖A-3 Contact前…………………………………………………………………51 圖A-4 Contact後…………………………………………………………………51 圖A-5 不同半導體之能帶圖…………………………………………………….52 圖A-6 三種不同異質接面狀況………………………………………………….53 圖A-7 太陽能電池等效電路圖………………………………………………….55 圖A-8 金字塔型表面結構……………………………………………………….56 圖A-9 奈米圓錐結構………………………………………………………….....56 圖A-10 柱狀結構………………………………………………………………...57 圖A-11 洞結構…………………………………………………………………...57 圖A-12 退火 300°C 情形下進行蝕刻後之表面型態(20000倍) …………..…...61 圖A-13 退火 300°C 情形下進行蝕刻後之表面型態-傾角 30 度(20000倍) ...62 圖A-14 退火 400°C 情形下進行蝕刻後之表面型態(20000倍). ………………63 圖A-15 退火 400°C 情形下進行蝕刻後之表面型態-傾角 30 度(20000倍) ...62 圖A-16 退火 400°C 情形下進行蝕刻後之表面型態-銀粒子留在表面(20000倍).……………………………………………………………………………………63 圖A-17 退火 500°C 情形下進行蝕刻後之表面型態(20000倍) .………………63 圖A-18 退火 500°C 情形下進行蝕刻後之表面型態-傾角 30 度(20000倍) ...63 圖A-19 退火 500°C 情形下進行蝕刻後之表面型態-傾角 45 度(10000倍) ...64 圖A-20 退火 500°C 情形下進行蝕刻後之表面型態-傾角 45 度(10000倍) ...65 圖A-21 退火 500°C 情形下進行蝕刻後之表面型態-截面(20000倍) ………...65 圖A-22 退火 500°C 情形下進行蝕刻後之表面型態-截面(50000倍) ………...65 圖A-23 矽基板經蝕刻後的光學反射變化……………………………………….66 圖A-24 銦錫氧化物在不同退火溫度下的光學穿透…………………………….67 圖A-25 525μm 矽基板厚度下製成元件並照光之電壓-電流性曲線圖………...69 圖A-26 300μm 矽基板厚度下製成元件並照光之電壓-電流性曲線圖………...69 圖A-27 200μm 矽基板厚度下製成元件並照光之電壓-電流性曲線圖………...69 圖A-28 100μm 矽基板厚度下製成元件並照光之電壓-電流性曲線…………...70 圖A-29 前退火 380°C 30 秒情形下所製成的元件之電壓-電流特性曲線…….71 圖A-30 前退火 380°C 60 秒情形下製成的元件電壓-電流特性曲線…..……...71 圖A-31 KOH 蝕刻下製成元件之電壓-電流性曲線…..………………………...72 表目錄 表1-1 常見太陽能電池種類…..…………………………..………………………1 表3-1 染料敏化太陽能電池中使用之基板/藥品………...…..…………………13 表4-1 不同蝕刻時間下太陽能電池之光電轉換效率…………………………..36 表4-2 不同時間下直接將標準試片進行乾蝕刻的光電轉換效率…………..…38 表4-3 不同蝕刻條件下(銀保留在多孔隙二氧化鈦表面)EIS阻抗分析…….....41 表4-4 不同蝕刻條件下(將銀從多孔隙二氧化鈦表面去除)EIS阻抗分析….....42 表4-5 不同蝕刻條件下(直接對多孔隙二氧化鈦膜做處理)EIS阻抗分析…….43 表A-1 矽晶p-n異質接面太陽能電池中使用之基板/藥品………………...…...58 表A-2 參數整理表……………………………………………………………….68 表A-3 不同厚度下的矽基板製成太陽能電池之效率…………….……………70 表A-4 不同的前退火時間下製成的太陽能電池轉換效率………..…………...71 表A-5 不同表面結構下製成的太陽能電池轉換效率………….………………72 | |
dc.language.iso | zh-TW | |
dc.title | 奈米柱結構光電極染料敏化太陽能電池 | zh_TW |
dc.title | Nanopillar structure photoanode dye-sensitized solar cell | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 陳奕君(I-Chun Cheng) | |
dc.contributor.oralexamcommittee | 徐振哲(Cheng-Che Hsu),張世航(Shih-Hang Chang) | |
dc.subject.keyword | 奈米柱,染料敏化太陽能電池,乾蝕刻, | zh_TW |
dc.subject.keyword | nanopillar,DSSC,dry etching, | en |
dc.relation.page | 76 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2012-08-15 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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