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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64188完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 毛明華 | |
| dc.contributor.author | Yu-Ju Wang | en |
| dc.contributor.author | 王育儒 | zh_TW |
| dc.date.accessioned | 2021-06-16T17:34:00Z | - |
| dc.date.available | 2015-08-22 | |
| dc.date.copyright | 2012-08-22 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-08-15 | |
| dc.identifier.citation | [1]Sjoerd Hoogland, “The Fuss About Quantum Dots”, Photonics Spectra 42, 80-81 (2008)
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/64188 | - |
| dc.description.abstract | 我們以up-conversion技術及時間相關單光子計數系統量測得到的時間解析光激發螢光資料探討CdSe/ZnS膠狀量子點及SiO2/CdSe/SiO2三明治結構的超快載子動態行為、光激發螢光強度隨著時間的變化，以及超快載子動態行為隨著時間的變化。
我們使用的是球核-球殼量子點，ZnS球殼可以鈍化CdSe球核表面的懸空鍵，所以以up-conversion技術量到的曲線中並沒有皮秒等級的衰減分量。另外，量測到CdSe量子點的升起時間為537飛秒。 CdSe量子點在空氣中會因光照射而氧化，氧化生成物直接捕獲激發的載子，加上非輻射性復合的效應增加，使得強度大幅變弱。而製作SiO2/CdSe/SiO2三明治結構可以隔開CdSe與氧氣，避免CdSe因光照射而氧化。製作成三明治結構後，強度有比較弱是因為在製作三明治結構的製程有升溫，使得CdSe的表面結構改變，更多缺陷形成，非輻射性復合變多。而以光照射三明治結構可以重組表面結構減少缺陷，使PL變強。 另外，也以μ-PL系統進行量測，也就是以高功率密度照射CdSe量子點。CdSe量子點在高功率密度照射下，激發的載子直接進入trap，非輻射性復合增加，強度變弱。而接著換成小功率密度照射，因為重組因光照射而改變的表面結構，強度變強。 | zh_TW |
| dc.description.abstract | In this thesis, we use time-resolved photoluminescence data measured with up-conversion technique and time-correlated single photon counting system to study the changes of photoluminescence intensity and ultrafast carrier dynamics over time in CdSe/ZnS colloidal quantum dots and SiO2/CdSe/SiO2 sandwich structure.
Because the dangling bonds on the CdSe surface can be passivated by ZnS shell, there is no picosecond decay in the curve measured with up-conversion technique. Besides, the photoluminescence rise time in CdSe quantum dots is 537 fs. CdSe quantum dots can be photooxidized in air. Oxidation-generated species can capture excited carriers. This effect and nonradiative recombination result in photoluminescence decay. In the SiO2/CdSe/SiO2 sandwich structure, oxygen is blocked by the outer SiO2 layer, thus photooxidation does not occur. The photoluminescence of the SiO2/CdSe/SiO2 sandwich structure is weaker. The CdSe surface was transformed and defects were generated during high temperature SiO2 growth process. This effect causes nonradiative recombination and weaker intensity. But we observed photo-induced photoluminescence enhancement in SiO2/CdSe/SiO2 sandwich structure. This photoluminescence enhancement is attributed to restructured surface and reduced defects. Furthermore, we use μ-PL measurement system. In other words, CdSe quantum dots are irradiated with high power density. During high power density irradiation, carrier trapping causes nonradiative recombination and photodarkening. After darkening, photoluminescence enhancement is observed with low power density irradiation. This enhancement is also attributed to restructured surface. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T17:34:00Z (GMT). No. of bitstreams: 1 ntu-101-R98941014-1.pdf: 1091844 bytes, checksum: 986373c7d4be15691daab9b79d887163 (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 誌謝 i
中文摘要 ii Abstract iv 目錄 vi 圖目錄 viii 表目錄 xii 第一章 簡介 1 第一節 量子點 1 第二節 膠狀量子點 2 第三節 球核-球殼量子點 3 第四節 研究動機 4 第二章 實驗原理 5 第一節 光激發螢光原理 5 第二節 載子動態 5 第三節 載子復合 6 第四節 時間相關單光子計數系統原理 7 第五節 Up-conversion原理 9 第三章 樣品結構與實驗架構 12 第一節 CdSe量子點 12 第二節 樣品製作方法 13 第三節 樣品介紹 13 第四節 Up-conversion實驗架構 15 第五節 時間相關單光子計數系統實驗架構 17 第四章 量測結果與討論 19 第一節 Up-conversion量測結果 19 第二節 CdSe及SiO2/CdSe/SiO2三明治結構之載子復合 21 第三節 SiO2/CdSe/SiO2三明治結構之光致螢光增強 24 第四節 CdSe量子點於空氣中螢光增強 30 第五節 CdSe量子點之光致氧化及螢光減弱 34 第六節 μ-PL量測：CdSe量子點之光致螢光減弱及再增強 37 第五章 總結 54 參考文獻 56 | |
| dc.language.iso | zh-TW | |
| dc.subject | 量子點 | zh_TW |
| dc.subject | 硒化鎘 | zh_TW |
| dc.subject | 膠狀量子點 | zh_TW |
| dc.subject | 時間解析光激發螢光 | zh_TW |
| dc.subject | CdSe | en |
| dc.subject | quantum dot | en |
| dc.subject | colloidal quantum dot | en |
| dc.subject | time-resolved photoluminescence | en |
| dc.title | 硒化鎘/硫化鋅膠狀量子點之時間解析光激發螢光研究 | zh_TW |
| dc.title | Time-Resolved Photoluminescence Study of Colloidal CdSe/ZnS Quantum Dots | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 100-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林浩雄,吳肇欣 | |
| dc.subject.keyword | 硒化鎘,量子點,膠狀量子點,時間解析光激發螢光, | zh_TW |
| dc.subject.keyword | CdSe,quantum dot,colloidal quantum dot,time-resolved photoluminescence, | en |
| dc.relation.page | 59 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-08-15 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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