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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳志毅 | |
| dc.contributor.author | Chia-Lin Chuang | en |
| dc.contributor.author | 莊家霖 | zh_TW |
| dc.date.accessioned | 2021-06-16T16:35:10Z | - |
| dc.date.available | 2012-11-22 | |
| dc.date.copyright | 2012-11-22 | |
| dc.date.issued | 2012 | |
| dc.date.submitted | 2012-11-05 | |
| dc.identifier.citation | 1. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma and M. Kawasaki, Nature materials 4 (1), 42-46 (2004).
2. D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwe and W. C. Harsch, ELECTRICAL PROPERTIES OF BULK ZnO 105, 399-401 (1997). 3. J. E. Jaffe and A. C. Hess, Physical Review B 48 (11), 7903-7909 (1993). 4. K. Ellmer and A. Klein, ZnO and Its Applications 1.2, page 4. 5. n. e. Handbook of Optics, McGraw-Hill Vol. 2 (1994). 6. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, NATURE 432, 488-492 (2004). 7. H. Hosono, Thin Solid Films 515 (15), 6000-6014 (2007). 8. H. Hosono, K. Nomura, Y. Ogo, T. Uruga and T. Kamiya, Journal of Non-Crystalline Solids 354 (19-25), 2796-2800 (2008). 9. V. A. Coleman and C. Jagadish, Basic Properties and Applications of ZnO 1.2. 10. K. Keis, E. Magnusson, H. Lindstrom, S.-E. Lindquist and A. Hagfeldt, Solar Energy Materials & Solar Cells 73, 51–58 ( 2002). 11. J. Krč, M. Zeman, O. Kluth, F. Smole and M. Topič, Thin Solid Films 426 (1-2), 296-304 (2003). 12. K. Matsubara, P. Fons, K. Iwata, A. Yamada, K. Sakurai, H. Tampo and S. Niki, Thin Solid Films 431-432, 369-372 (2003). 13. P. F. Carcia, R. S. McLean, M. H. Reilly and G. Nunes, Applied Physics Letters 82 (7), 1117 (2003). 14. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. n. J. S. Marques, R. F. P. Martins and L. M. N. Pereira, Applied Physics Letters 85 (13), 2541 (2004). 15. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata and T. Kawai, Journal of Applied Physics 93 (3), 1624 (2003). 16. R. L. Hoffman, B. J. Norris and J. F. Wager, Applied Physics Letters 82 (5), 733 (2003). 17. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K.Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma and M. Kawasaki, Nat. Mater. 4, 42 ( 2005). 18. S. J. Jiao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. Yao, J. Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan and Z. K. Tang, Applied Physics Letters 88 (3), 031911 (2006). 19. H.-C. Cheng, C.-F. Chen and C.-Y. Tsay, Applied Physics Letters 90 (1), 012113 (2007). 20. S. Singh and P. Chakrabarti, Science of Advanced Materials 4 (2), 199-203 (2012). 21. B. J. Norris, J. Anderson, J. F. Wager and D. A. Keszler, J. Phys. D: Appl. Phys. 36, L105–L107 (2003). 22. S.-H. Lee, K.-J. Byeon, H. Park, J.-Y. Cho, K.-Y. Yang and H. Lee, Microelectronic Engineering 88 (11), 3278-3281 (2011). 23. Y. Sun, J. H. Seo, C. J. Takacs, J. Seifter and A. J. Heeger, Advanced materials 23 (14), 1679-1683 (2011). 24. A. A. Ansari, R. Singh, G. Sumana and B. D. Malhotra, The Analyst 134 (5), 997-1002 (2009). 25. Z. Yang, Z. Ye, B. Zhao, X. Zong and P. Wang, Journal of Sol-Gel Science and Technology 54 (3), 282-285 (2010). 26. L. Armelao, G. Bottaro, L. Bovo, C. Maccato, E. Tondello, F. Anselmi, S. Bersani and P. Caliceti, Journal of Sol-Gel Science and Technology 60 (3), 352-358 (2011). 27. S. Bandyopadhyay, G. K. Paul, R.Roy, S. K. Sen and S. S. Materials Chemistry and Physics∗, Materials Chemistry and Physics 74, 83-91 (2002). 28. A. R. Poghosyan, X. Li, A. L. Manukyan, S. G. Grigoryan and E. S. Vardanyan, 6698, 66981D-66981D-66984 (2007). 29. K.-m. Lin, Y.-Y. Chen and K.-Y. Chou, Journal of Sol-Gel Science and Technology 49 (2), 238-242 (2008). 30. H. Wang, M. Xu, J. Xu, L. Yang and S. Zhou, Journal of Materials Science: Materials in Electronics 21 (2), 145-148 (2009). 31. K.-m. Lin and P. Tsai, Materials Science and Engineering: B 139 (1), 81-87 (2007). 32. T. Schuler and M. A. Aegerter, Thin Solid Films 351, 125-131 (1999). 33. N. Bel Hadj Tahar, R. Bel Hadj Tahar, A. Ben Salah and A. Savall, Journal of the American Ceramic Society 91 (3), 846-851 (2008). 34. L. Xu, G. Zheng, J. Miao and F. Xian, Applied Surface Science 258 (19), 7760-7765 (2012). 35. M. Dutta, S. Mridha and D. Basak, Applied Surface Science 254 (9), 2743-2747 (2008). 36. Y. Li, L. Xu, X. Li, X. Shen and A. Wang, Applied Surface Science 256 (14), 4543-4547 (2010). 37. C. SANCHEZ, J. LIVAGE, M. HENRY and F. BABONNEAU, Journal of Non-Crystalline Solids 100, 65-76 (1988). 38. S. H. Yoon, D. Liu, D. Shen, M. Park and D.-J. Kim, Journal of Materials Science 43 (18), 6177-6181 (2008). 39. R. Bel Hadj Tahar and N. Bel Hadj Tahar, Journal of the American Ceramic Society 88 (7), 1725-1728 (2005). 40. M. Wang, W. Liang, Y. Yang, J. Yang, X. Cheng, S. H. Hahn and E. J. Kim, Materials Chemistry and Physics 134 (2-3), 845-850 (2012). 41. I. Winer, G. E. Shter, M. Mann-Lahav and G. S. Grader, Journal of Materials Research 26 (10), 1309-1315 (2011). 42. J. Wang, Y. Qi, Z. Zhi, J. Guo, M. Li and Y. Zhang, Smart Materials and Structures 16 (6), 2673-2679 (2007). 43. E. J. Luna-Arredondo, A. Maldonado, R. Asomoza, D. R. Acosta, M. A. Meléndez-Lira and M. de la L. Olvera, Thin Solid Films 490 (2), 132-136 (2005). 44. Y.-S. Kim, W.-P. Tai and S.-J. Shu, Thin Solid Films 491 (1-2), 153-160 (2005). 45. M. Zhu, H. Huang, J. Gong, C. Sun and X. Jiang, Journal of Applied Physics 102 (4), 043106 (2007). 46. C. G. V. d. Walle, PHYSICAL REVIEW LETTERS 85, 1012-1015 (2000). 47. C. H. Park, S. B. Zhang and S.-H. Wei, Physical Review B 66 (7) (2002). 48. A. Kobayashi, O. Sankey and J. Dow, Physical Review B 28 (2), 946-956 (1983). 49. T. YAMAMOTO and H. KATAYAMA-YOSHIDA, Jpn. J. Appl. Phys. 38, L166-L169 (1999). 50. J.-H. Lee and B.-O. Park, Thin Solid Films 426 (1-2), 94-99 (2003). 51. W.-H. Kim, W. J. Maeng, M.-K. Kim and H. Kim, Journal of The Electrochemical Society 158 (8), D495 (2011). 52. T. Kemmitt, B. Ingham and R. Linklater, The Journal of Physical Chemistry C 115 (30), 15031-15039 (2011). 53. J. G. Lu, Z. Z. Ye, F. Zhuge, Y. J. Zeng, B. H. Zhao and L. P. Zhu, Applied Physics Letters 85 (15), 3134 (2004). 54. D.-S. Liu, C.-S. Sheu and C.-T. Lee, Journal of Applied Physics 102 (3), 033516 (2007). 55. S.-M. Chou, M.-H. Hon and I.-C. Leu, Applied Surface Science 255 (5), 2958-2962 (2008). 56. M. Kumar, T.-H. Kim, S.-S. Kim and B.-T. Lee, Applied Physics Letters 89 (11), 112103 (2006). 57. L. L. Chen, J. G. Lu, Z. Z. Ye, Y. M. Lin, B. H. Zhao, Y. M. Ye, J. S. Li and L. P. Zhu, Applied Physics Letters 87 (25), 252106 (2005). 58. M. Dutta and D. Basak, Applied Physics Letters 92 (21), 212112 (2008). 59. M. Dutta, T. Ghosh and D. Basak, Journal of Electronic Materials 38 (11), 2335-2342 (2009). 60. Y. H. Leung, Z. B. He, L. B. Luo, C. H. A. Tsang, N. B. Wong, W. J. Zhang and S. T. Lee, Applied Physics Letters 96 (5), 053102 (2010). 61. Y. Cao, L. Miao, S. Tanemura, M. Tanemura, Y. Kuno and Y. Hayashi, Applied Physics Letters 88 (25), 251116 (2006). 62. Q. Wan, Applied Physics Letters 89 (17), 176103 (2006). 63. J.-P. Lin and J.-M. Wu, Applied Physics Letters 92 (13), 134103 (2008). 64. Y.-S. Kim and W.-P. Tai, Applied Surface Science 253 (11), 4911-4916 (2007). 65. B. Nasr, S. Dasgupta, D. Wang, N. Mechau, R. Kruk and H. Hahn, Journal of Applied Physics 108 (10), 103721 (2010). 66. X. Zhang, H. Fan, J. Sun and Y. Zhao, Thin Solid Films 515 (24), 8789-8792 (2007). 67. I. J. Lee, Journal of Applied Physics 95 (10), 5540 (2004). 68. J.-H. Lim, D.-K. Hwang, H.-S. Kim, J.-Y. Oh, J.-H. Yang, R. Navamathavan and S.-J. Park, Applied Physics Letters 85 (25), 6191 (2004). 69. N. Y. Garces, L. Wang, N. C. Giles, L. E. Halliburton, G. Cantwell and D. B. Eason, Journal of Applied Physics 94 (1), 519 (2003). 70. J. G. Lu, S. Fujita, T. Kawaharamura and H. Nishinaka, Chemical Physics Letters 441 (1-3), 68-71 (2007). 71. E. F. Keskenler, S. Doğan, B. Diyarbakır, S. Duman and B. Gürbulak, Journal of Sol-Gel Science and Technology 60 (1), 66-70 (2011). 72. A. E. Carlsson, Physical Review B 32, 1386-1389 (1985). 73. N. Shakti and P.S.Gupta, Applied Physics Research 2, 19-28 (2010). 74. R. F. Silva and M. E. D. Zaniquelli, Thin Solid Films 449, 86-93 (2004). 75. Y. Natsume and H. Sakata, Thin Solid Films 372, 30-36 (2000). 76. A. K. Zak, M. E. Abrishami, W. H. A. Majid, R. Yousefi and S. M. Hosseini, Ceramics International 37 (1), 393-398 (2011). 77. M. Ohyama, H. Kozuka and T. Yoko, J. Am. Ceram. Soc. 81 (6), 1622-1632 (1998). 78. D. Wang and S. Gao, Journal of Alloys and Compounds 476 (1-2), 925-928 (2009). 79. Z. Chen, X. X. Li, N. Chen, H. Wang, G. P. Du and A. Y. M. Suen, Journal of Sol-Gel Science and Technology 62 (2), 252-258 (2012). 80. F. Khan, Vandana, S. N. Singh, M. Husain and P. K. Singh, Solar Energy Materials and Solar Cells 100, 57-60 (2012). 81. W. Tang and D. C. Cameron, Thin Solid Films 238, 83-87 (1994). 82. G. K. Paul, S. Bandyopadhyay and S. K. Sen, phys. stat. sol. (a) 191, No. 2, 509-518 (2002). 83. K. Abe, T. Komiyama, Y. Chonan, H. Yamaguchi and T. Aoyama, Japanese Journal of Applied Physics 48 (4), 041104 (2009). 84. K.-m. Lin and P. Tsai, Thin Solid Films 515 (24), 8601-8604 (2007). 85. S. Chakrabarti, D. Ganguli and S. Chaudhuri, Materials Letters 58 (30), 3952-3957 (2004). 86. R. Ghosh, G. K. Paul and D. Basak, Materials Research Bulletin 40 (11), 1905-1914 (2005). 87. P. T. Hsieh, Y. C. Chen, M. S. Lee, K. S. Kao, M. C. Kao and M. P. Houng, Journal of Sol-Gel Science and Technology 47 (1), 1-6 (2008). 88. J. Li, J.-H. Huang, Y.-L. Zhang, Y. Yang, W.-J. Song and X.-M. Li, Journal of Electroceramics 26 (1-4), 84-89 (2011). 89. Y. Natsume and H. Sakata, Materials Chemistry and Physics 78, 170-176 (2002). 90. M. Çopuroğlu, S. O’Brien and G. M. Crean, Applied Surface Science 256 (3), 737-743 (2009). 91. P. Sagar, M. Kumar and R. M. Mehra, Thin Solid Films 489 (1-2), 94-98 (2005). 92. A. Janotti and C. G. Van de Walle, Nature materials 6 (1), 44-47 (2007). 93. H. Wang, M.-h. Xu, J.-w. Xu, M.-f. Ren and L. Yang, Journal of Materials Science: Materials in Electronics 21 (6), 589-594 (2009). 94. Z. Q. Xu, H. Deng, Y. Li, Q. H. Guo and Y. R. Li, Materials Research Bulletin 41 (2), 354-358 (2006). 95. T. Kamiya, K. Nomura and H. Hosono, Applied Physics Letters 96 (12), 122103 (2010). 96. T. Kamiya, K. Nomura and H. Hosono, JOURNAL OF DISPLAY TECHNOLOGY 5, 462-467 (2009). 97. M. Orita, H. Ohta, M. Hirano, S. Narushima and H. Hosono, Philosophical Magazine Part B 81 (5), 501-515 (2001). 98. M. W. Zhu, J. Gong, C. Sun, J. H. Xia and X. Jiang, Journal of Applied Physics 104 (7), 073113 (2008). 99. R. B. H. Tahar and N. B. H. Tahar, Journal of Applied Physics 92 (8), 4498 (2002). 100. Y. Shigesato, S. Takaki and T. Haranou, Applied Surface Science 48/49, 269-275 (1991). 101. M. W. Zhu, J. H. Xia, R. J. Hong, H. Abu-Samra, H. Huang, T. Staedler, J. Gong, C. Sun and X. Jiang, Journal of Crystal Growth 310 (4), 816-823 (2008). 102. L.-Y. Lin and D.-E. Kim, Thin Solid Films 517 (5), 1690-1700 (2009). 103. A. K. Srivastava and J. Kumar, AIP Advances 1 (3), 032153 (2011). 104. J.-H. Lee, K.-H. Ko and B.-O. Park, Journal of Crystal Growth 247, 119-125 (2003). 105. Y. Caglar, M. Caglar and S. Ilican, Current Applied Physics 12 (3), 963-968 (2012). 106. A. Janotti and C. G. Van de Walle, Applied Physics Letters 87 (12), 122102 (2005). 107. M. G. Wardle, J. P. Goss and P. R. Briddon, Physical Review Letters 96 (20), 205504 (2006). 108. W. Yang, Z. Wu, Z. Liu, A. Pang, Y.-L. Tu and Z. C. Feng, Thin Solid Films 519 (1), 31-36 (2010). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/63328 | - |
| dc.description.abstract | 使用無毒性溶劑及穩定劑以溶膠凝膠自旋塗佈法製作的氮銦共摻雜P型氧化鋅薄膜在室溫下可得到4.43歐姆公分的電阻率及1.36 × 1018每立方公分的載子濃度，利用鋁Kα光源X光光電子能譜偵測氮1s軌域及二次離子質譜儀縱深分析氮元素皆顯示氮已成功摻雜入氧化鋅。對鋁銦共摻雜的N型氧化鋅薄膜而言，第一道後退火環境的氧分壓對電性有明顯影響。將第一道後退火的環境由空氣改為氮氣僅犧牲少許可見光穿透率，但能大幅增加薄膜導電率。另外每一層薄膜塗佈之後都重複第一道後退火可減少有機物殘留的機會，減低雜質散射，有效提升電子遷移率。有機物殘留較少亦改善氧化鋅生長時的晶格品質，增進摻雜離子有效取代鋅離子的比率而提升電子濃度。以X光光電子能譜進一步分析摻雜前後的氧化鋅發現摻雜使吸附氧的情況變嚴重，大部分電子被薄膜表面或晶粒邊界中的氧分子捕捉而無法導電。第二道後退火對電子濃度的主要貢獻並非形成氧空缺或摻雜氫而是除去表面及晶粒邊界多餘的氧分子，我們發現無論是對本質氧化鋅或鋁銦共摻雜氧化鋅而言，氫氮混合氣環境比真空環境去除吸附氧效果更佳。然而當第二道後退火的溫度達攝氏500度時，氫氮混合氣和氧化鋅反應會過於劇烈而把氧化鋅薄膜蝕刻掉，因此存在最佳的第二道後退火溫度於攝氏400度。厚度200奈米N型氧化鋅薄膜的可見光平均穿透率均在百分之86到90之間，適於光電元件的應用。 | zh_TW |
| dc.description.abstract | In-N co-doped p-type ZnO thin films have been demonstrated using a non-toxic sol-gel spin coating process. The resistivity of the p-type ZnO films is 4.43 Ω cm at room temperature. The X-ray photoelectron spectra of N 1s core level measured with an Al Kα photon line identify the existence of nitrogen in the p-type ZnO. The secondary ion mass spectrometry depth profile also confirms the nitrogen contents in the In-N co-doped films. For Al-In co-doped n-type ZnO films, varying the environment of the first post-annealing process from air to nitrogen brings about a great improvement in conductivity. In addition, repeating the first post-annealing step after every layer being deposited can improve the Hall mobility of ZnO films. The enhancement of mobility is attributed to the decrease of the impurity scattering caused by carbon related defects. Furthermore, Al-In co-doped ZnO films have been verified to absorb more excess oxygen than undoped ZnO films. The influence of the second post-annealing process on the carrier concentration is primarily attributed to oxygen desorption, not the increase of oxygen vacancies or hydrogen doping. Forming gas is a more effective annealing environment than vacuum ambient to activate the dopants. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-16T16:35:10Z (GMT). No. of bitstreams: 1 ntu-101-D95941010-1.pdf: 3432218 bytes, checksum: 7ef46e29149bd3c119d81116bb0d62ad (MD5) Previous issue date: 2012 | en |
| dc.description.tableofcontents | 致謝 I
摘要 II Abstract III Contents IV List of figures VII List of tables XIV Chapter 1 Introduction to ZnO thin films prepared by sol-gel method 1 1.1 Fundamental properties of ZnO thin films 1 1.2 Applications of ZnO thin films 4 1.3 Benefits of sol-gel derived ZnO films and their applications 6 1.4 Theory and development of ZnO films prepared by sol-gel method 7 1.4.1 Chemical reactions from precursor to ZnO films 7 1.4.2 Previous work on ZnO films prepared by sol-gel method 8 1.5 Asymmetric doping behavior of ZnO films 11 1.5.1 p-type ZnO films 11 1.5.2 n-type ZnO films 15 1.6 Motivation 18 Chapter 2 In-N co-doped p-type ZnO films prepared by non-toxic sol-gel method 20 2.1 Introduction 20 2.2 Experiments 22 2.3 Incorporation of nitrogen in In-N co-doped ZnO films prepared by sol-gel method 25 2.4 Electrical and optical properties of In-N co-doped ZnO films prepared by sol-gel method 28 2.5 Summary 33 Chapter 3 Effect of crystallization annealing on structural, electrical, and optical properties of Al-In co-doped ZnO films prepared by sol-gel method 35 3.1 Introduction 35 3.2 Experiments 37 3.3 Effect of crystallization annealing ambient on electrical properties of Al-In co-doped ZnO films prepared by sol-gel method 40 3.4 Improvement in electronic mobility of sol-gel derived Al-In co-doped ZnO films by modified crystallization annealing method 49 3.5 Summary 59 Chapter 4 Effect of reduction annealing on structural, electrical, and optical properties of Al-In co-doped ZnO films prepared by sol-gel method 60 4.1 Introduction 60 4.2 Experiments 61 4.3 Effect of reduction annealing on electrical properties of undoped ZnO films prepared by sol-gel method 64 4.4 Role of oxygen desorption during reduction annealing of Al-In co-doped ZnO films prepared by sol-gel method 67 4.5 Effect of reduction annealing temperature on electrical properties of Al-In co-doped ZnO films prepared by sol-gel method 79 4.6 Summary 83 Chapter 5 Conclusion 84 Reference 86 | |
| dc.language.iso | en | |
| dc.subject | 鋁銦共摻雜氧化鋅 | zh_TW |
| dc.subject | 無毒性 | zh_TW |
| dc.subject | 溶膠凝膠 | zh_TW |
| dc.subject | P型氧化鋅 | zh_TW |
| dc.subject | 去吸附氧 | zh_TW |
| dc.subject | sol-gel | en |
| dc.subject | non-toxic | en |
| dc.subject | p-type ZnO | en |
| dc.subject | Al-In co-doped ZnO | en |
| dc.subject | oxygen desorption | en |
| dc.title | 溶膠凝膠法製備P型及N型氧化鋅薄膜導電特性研究 | zh_TW |
| dc.title | Electrical properties of p-type and n-type ZnO films prepared by sol-gel method | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-1 | |
| dc.description.degree | 博士 | |
| dc.contributor.oralexamcommittee | 林清富,陳奕君,吳育任,陳美杏 | |
| dc.subject.keyword | 溶膠凝膠,無毒性,P型氧化鋅,鋁銦共摻雜氧化鋅,去吸附氧, | zh_TW |
| dc.subject.keyword | sol-gel,non-toxic,p-type ZnO,Al-In co-doped ZnO,oxygen desorption, | en |
| dc.relation.page | 96 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2012-11-05 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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