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標題: | 應用於奈米積體電路製造之製像效應修正方法 Patterning Process Effect Correction Methodology for Nanoscale Integrated Circuit Manufacturing |
作者: | Philip Chooi Wan Ng 黃飛歷 |
指導教授: | 蔡坤諭(Kuen-Yu Tsai) |
關鍵字: | 傳統控制技術,蝕刻,極紫外光,微影,光罩陰影,光學鄰近修正,鄰近效應,三維光罩效應, classical control technique,etching,extreme ultraviolet,lithography,mask shadowing,optical proximity correction,proximity effect,three-dimensional mask effect, |
出版年 : | 2013 |
學位: | 博士 |
摘要: | As the device dimensions keep shrinking, tight control of critical dimension (CD) errors over the patterning processes becomes increasingly important. Therefore, it calls for more effective practice of model-based correction. In this dissertation, conventional methodologies for correcting patterning process effects, focusing on extreme ultraviolet (EUV) lithography and high-numerical-aperture immersion lithography, are addressed. Promising optical proximity correction (OPC) algorithms using classical control techniques are proposed to deal with the challenges on conventional methodologies.
In EUV lithography, projection systems need to rely on reflective optical elements and masks with oblique illumination for image formation. It can lead to undesired imaging effects which are generally reported as mask shadowing. Rule-based approaches have been developed to compensate for mask shadowing. However, the electromagnetic interaction between the incident light and the mask topography with complicated geometric patterns may cause not only mask shadowing but also proximity effects. This phenomenon cannot be easily taken into account by rule-based corrections and thus imposes a challenge on a partially model-based correction flow. This conventional correction strategy is accomplished by incorporating the separate corrections, in which the rule-based corrections are used to compensate for EUV-specific imaging effects, and the model-based correction is used to compensate for proximity effects. Since most rule-based corrections are empirically developed using simple Manhattan patterns, they may not be applicable to the circuit layout with complicated geometric patterns. In order to deal with these problems, a fully model-based correction flow is proposed for simultaneous compensation of EUV-specific imaging effects and proximity effects. Numerical experiments show that the fully model-based correction flow outperforms the partially model-based correction flow in terms of correction accuracy while the total run time required is slightly increased. In addition, the impact of the two correction strategies on the CD variation caused by defocus and the deviation of electrical characteristics from the design intent is explored. Numerical experiments show that the proposed correction strategy significantly reduces the variability of CD and electrical characteristics. In high-numerical-aperture immersion lithography, as the device dimensions continue to shrink, three-dimensional (3-D) mask effects previously ignored become important for accurate prediction and compensation of proximity effects. Consequently, process models must accommodate 3-D mask effects. The state-of-the-art model-based OPC methodology, called delta-chrome OPC (DCOPC), requires the iterative computation of the mask perturbation to facilitate convergence. The increasing complexity of OPC process models challenges the DCOPC methodology since each computation of the mask perturbation becomes prohibitively expensive. Therefore, a new model-based OPC methodology, called non-DCOPC, is proposed to deal with this problem. It only requires image intensity information to achieve convergence using classical control techniques. Numerical experiments show that the run time required is significantly reduced. In some cases, the correction accuracy obtained is slightly improved. In addition to simulating lithography process effects, process models must accommodate pattern distortion due to the etching process. An etching bias modeling method and a staged correction strategy have been developed to compensate for such patterning process effects efficiently. However, the staged correction strategy may cause inaccurate compensation of patterning process effects since the patterns used to simulate etching process effects are assumed to be rectilinear. In fact, the patterns will be distorted during the lithography process. Therefore, a promising correction strategy that incorporates the non-DCOPC algorithm is proposed to deal with this problem. Numerical experiments show that while the total run time required is increased, the correction accuracy obtained is significantly improved. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/62902 |
全文授權: | 有償授權 |
顯示於系所單位: | 電機工程學系 |
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